MRF8S21120HSR3 vs MRF8S21100HSR3 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF8S21120HSR3 disebabkan oleh NXP Semiconductors dan MRF8S21100HSR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MRF8S21120HSR3 MRF8S21120HSR3 - 28W RF Power MOSFET 2110-2170 MHz | NXP

MRF8S21120HSR3 - 28W RF Power MOSFET 2110-2170 MHz | NXP

MRF8S21120HSR3 ✓ Aktif
NXP Semiconductors
MRF8S21100HSR3 MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP

MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP

MRF8S21100HSR3 ✓ Aktif

Pengandingan Spesifikasi

Parametr MRF8S21120HSR3 MRF8S21100HSR3
Merek NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Number MRF8S21120HSR3 —
Device Type N-Channel Enhancement-Mode Lateral RF Power MOSFET —
Frequency Range 2110-2170 MHz 2110 MHz to 2170 MHz
Output Power (P1dB / average) 28 W average, W-CDMA / LTE —
Drain-Source Breakdown Voltage V(BR)DSS 65 V —
Operating Drain Voltage 28 V —
Power Gain (Typical) 17.6 dB at 2.17 GHz —
Drain Efficiency (Typical) [DATA_NEEDED: datasheet efficiency figure] —
Operating Mode Class AB / Class C —
Package Type NI-780HS (ceramic flange) —
Case Mounting Source on case (flange grounding) —
Bilangan Pin 2-pin (Gate, Drain) —
Gaya Pemasangan Through-hole / bolt-down flange —
Aras MSL 1 (unlimited) —
Status RoHS RoHS compliant Compliant (per NXP product family)
Lead-Free Yes Yes
Jenis Transistor — N-Channel Enhancement-Mode Lateral MOSFET
Technology — LDMOS (Laterally Diffused MOSFET)
Drain-Source Voltage (V(BR)DSS) — 65 V
Operating Drain Voltage (VDD) — 28 V nominal
Test Frequency — 2.14 GHz
Output Power (CW, typical) — 100 W
Average Output Power (W-CDMA) — 24 W
Power Gain (typ) — 18.3 dB at 2.14 GHz
Drain Current (ID, max) — [DATA_NEEDED: max ID rating]
Kemasan / Case — NI-780S (Case 465A-06), 3-pin ceramic flange
Configuration — Single, push-pull N/A
Jenis Pemasangan — Chassis / flange mount, screw-down
Operating Class — Class AB or Class C
Application — W-CDMA, LTE base-station power amplifiers

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