MRF8S9102NR3 vs MRFE6S9160HSR3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF8S9102NR3 disebabkan oleh NXP Semiconductors dan MRFE6S9160HSR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MRF8S9102NR3 | MRFE6S9160HSR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Family | MRF8S9102N / HV8 series | — |
| Jenis Transistor | N-Channel Lateral Enhancement-Mode MOSFET | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Application | RF Power Amplifier, W-CDMA base station | — |
| Operating Frequency Range | 865 MHz to 960 MHz | 865 MHz to 960 MHz |
| Test Frequency | 920 MHz | 880 MHz |
| Drain-Source Operating Voltage (VDS) | 28 V (typical test condition) | — |
| Drain-Source Breakdown Voltage (VDSS) | 70 V (max) | — |
| Average Output Power (POUT) | 28 W | — |
| Drain Current (ID) at bias | 750 mA | — |
| Power Gain (Gp) | 23.1 dB | — |
| Modulation Format | Single W-CDMA (also Class AB/C capable) | — |
| Kemasan | OM-780-2 (3-pin ceramic, flange mount) | NI-780S (NI780HS) ceramic, bolted flange |
| Jenis Pemasangan | Chassis / flange mount with bolt-down thermal pad | Through-hole / chassis mount with flange |
| Kiraan Pin | 3 | — |
| Status RoHS | [DATA_NEEDED: rohs compliance] | [DATA_NEEDED: confirm via latest distributor listing] |
| Operating Mode | Class AB or Class C | — |
| Part Number | — | MRFE6S9160HSR3 |
| Drain-Source Voltage (VDSS) | — | 66 V (rated) |
| Tegangan Pemecah Daya Kumpal-Sumber | — | [DATA_NEEDED: V(BR)DSS minimum] |
| Operating Drain Voltage (VDD) | — | 28 V (typical bias) |
| Continuous Drain Current (ID) | — | 10 uA [leakage spec context, ID max [DATA_NEEDED]] |
| Quiescent Current (IDQ) | — | 1200 mA |
| Output Power (Pout) Avg. | — | 35 W (under N-CDMA drive, 9.8 dB PAR) |
| Output Power Peak | — | 160 W (peak envelope) |
| Power Gain | — | 21 dB (typical at 880 MHz) |
| Drain Efficiency | — | 31% (typical at 35 W avg.) |
| ACPR at 750 kHz Offset | — | -46.8 dBc |
| Technology | — | HV6E (6th gen high-voltage LDMOS) |