MRF8S9102NR3 vs MRFE6S9160HSR3 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF8S9102NR3 tarafından NXP Semiconductors ve MRFE6S9160HSR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | MRF8S9102NR3 | MRFE6S9160HSR3 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Family | MRF8S9102N / HV8 series | — |
| Transistor Türü | N-Channel Lateral Enhancement-Mode MOSFET | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Application | RF Power Amplifier, W-CDMA base station | — |
| Operating Frequency Range | 865 MHz to 960 MHz | 865 MHz to 960 MHz |
| Test Frequency | 920 MHz | 880 MHz |
| Drain-Source Operating Voltage (VDS) | 28 V (typical test condition) | — |
| Drain-Source Breakdown Voltage (VDSS) | 70 V (max) | — |
| Average Output Power (POUT) | 28 W | — |
| Drain Current (ID) at bias | 750 mA | — |
| Power Gain (Gp) | 23.1 dB | — |
| Modulation Format | Single W-CDMA (also Class AB/C capable) | — |
| Paket | OM-780-2 (3-pin ceramic, flange mount) | NI-780S (NI780HS) ceramic, bolted flange |
| Montaj Türü | Chassis / flange mount with bolt-down thermal pad | Through-hole / chassis mount with flange |
| Pin Sayısı | 3 | — |
| RoHS Durumu | [DATA_NEEDED: rohs compliance] | [DATA_NEEDED: confirm via latest distributor listing] |
| Operating Mode | Class AB or Class C | — |
| Part Number | — | MRFE6S9160HSR3 |
| Drain-Source Voltage (VDSS) | — | 66 V (rated) |
| Drain-Source Patlama Voltajı | — | [DATA_NEEDED: V(BR)DSS minimum] |
| Operating Drain Voltage (VDD) | — | 28 V (typical bias) |
| Continuous Drain Current (ID) | — | 10 uA [leakage spec context, ID max [DATA_NEEDED]] |
| Quiescent Current (IDQ) | — | 1200 mA |
| Output Power (Pout) Avg. | — | 35 W (under N-CDMA drive, 9.8 dB PAR) |
| Output Power Peak | — | 160 W (peak envelope) |
| Power Gain | — | 21 dB (typical at 880 MHz) |
| Drain Efficiency | — | 31% (typical at 35 W avg.) |
| ACPR at 750 kHz Offset | — | -46.8 dBc |
| Technology | — | HV6E (6th gen high-voltage LDMOS) |