MT40A1G8SA-075:E vs K4A8G085WB-BICR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A1G8SA-075:E disebabkan oleh Micron Technology dan K4A8G085WB-BICR disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ AktifPengandingan Spesifikasi
| Parametr | MT40A1G8SA-075:E | K4A8G085WB-BICR |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | SDRAM - DDR4 | DDR4 SDRAM |
| Saiz Ingatan | 8Gbit (1G x 8) | — |
| Antaramuka | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| Kadar Data | 2666 MT/s | 2400 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| Gambaran Suhu Operasi | 0°C to +95°C | [DATA_NEEDED: exact temperature range for BICR industrial suffix] |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Kemasan | 78-FBGA (7.5x11 mm) | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Write Leveling | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| CRC Function | Supported | — |
| Data Mask Function | Supported | — |
| Status RoHS | Compliant | Compliant |
| Density | — | 8 Gb |
| Organisasi | — | 1G x 8 |
| Tegangan Pemberi Arus | — | 1.2 V (VDD/VDDQ) |
| Number of Banks | — | 16 |
| Refresh Cycles | — | 8192 |
| Kiraan Pin | — | 78 |
| Temperature Grade | — | Industrial (I-grade) |
| Die / Process | — | Samsung 8Gb B-die DDR4 |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Lead-Free | — | Yes |
| Refresh Management | — | Row refresh, auto-refresh and self-refresh supported |