MT40A1G8SA-075:E vs K4A8G085WB-BICR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A1G8SA-075:E sa pamamagitan ng Micron Technology at K4A8G085WB-BICR sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT40A1G8SA-075:E | K4A8G085WB-BICR |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | SDRAM - DDR4 | DDR4 SDRAM |
| Laki ng Memory | 8Gbit (1G x 8) | — |
| Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| Rate ng Data | 2666 MT/s | 2400 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| Hanay ng Temperature na Operasyon | 0°C to +95°C | [DATA_NEEDED: exact temperature range for BICR industrial suffix] |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Packhaging | 78-FBGA (7.5x11 mm) | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Write Leveling | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| CRC Function | Supported | — |
| Data Mask Function | Supported | — |
| Tindminan RoHS | Compliant | Compliant |
| Density | — | 8 Gb |
| Organisasyon | — | 1G x 8 |
| Volte ng Pagbibigay | — | 1.2 V (VDD/VDDQ) |
| Number of Banks | — | 16 |
| Refresh Cycles | — | 8192 |
| Bilang ng Pin | — | 78 |
| Temperature Grade | — | Industrial (I-grade) |
| Die / Process | — | Samsung 8Gb B-die DDR4 |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Lead-Free | — | Yes |
| Refresh Management | — | Row refresh, auto-refresh and self-refresh supported |