MT40A2G8AG-062E vs H5ANAG8NCMR-XNI Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A2G8AG-062E disebabkan oleh Micron Technology dan H5ANAG8NCMR-XNI disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MT40A2G8AG-062E | H5ANAG8NCMR-XNI |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | Volatile (DRAM) |
| Density | 16 Gbit | — |
| Organisasi | 2G x 8 | — |
| Speed | DDR4-3200 (3200 MT/s) | — |
| Clock Frequency | 1600 MHz | — |
| Access Time (Clock Cycle Time) | 0.625 ns (tCK) | — |
| Latensi CAS | CL22 (DDR4-3200) | — |
| Access Time | 19 ns | — |
| Supply Voltage VDD | 1.2 V | — |
| I/O Interface | POD12 (1.2 V pseudo-open drain) | — |
| VPP Voltage | 2.5 V | — |
| Number of Banks | 16 (4 bank groups x 4 banks) | — |
| Operating Temperature (AUT grade) | -40C to +95C (per Micron grade table) | — |
| Kemasan | 78-FBGA (7.5 x 11 mm) | FBGA-78 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Die Revision | AG (current generation) | — |
| Memory Format | — | DDR4 SDRAM |
| Saiz Ingatan | — | 16 Gb |
| Memory Organization | — | x8 |
| Antaramuka | — | Parallel |
| Kadar Data | — | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | — | 1.2 V |
| Packaging | — | Tray |
| Product Status | — | Active |
| Manufacturer | — | SK Hynix |
| Technology | — | CMOS DDR4 SDRAM |
| Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Refresh | — | [DATA_NEEDED: refresh rate] |