MT40A512M16JY-075E vs H5AN8G6NAFR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M16JY-075E disebabkan oleh Micron Technology dan H5AN8G6NAFR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MT40A512M16JY-075E | H5AN8G6NAFR |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | — |
| Kadar Data | 2666 MT/s | 2400 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| Antaramuka | Parallel | — |
| Kemasan | 96-FBGA (8x14) | 96-ball FBGA |
| Jenis Pemasangan | Surface Mount | — |
| Gambaran Suhu Operasi | 0°C to +95°C (TC) | — |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | — |
| Status RoHS | Compliant | — |
| Ciri-ciri | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Density | — | 8 Gb |
| Tegangan Pemberi Arus | — | 1.2 V |
| Suhu Operasi | — | 0°C to +85°C |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| RoHS Compliant | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Dynamic ODT | — | Yes |
| ZQ Calibration | — | Yes |
| CRC | — | Yes |
| Write Leveling | — | Yes |