MT40A512M16JY-07EAIT:B vs NT5CC256M16DP-DI Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M16JY-07EAIT:B disebabkan oleh Micron Technology dan NT5CC256M16DP-DI disebabkan oleh Nanya Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ Aktif
Pengandingan Spesifikasi
| Parametr | MT40A512M16JY-07EAIT:B | NT5CC256M16DP-DI |
|---|---|---|
| Merek | Micron Technology | Nanya Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 8 Gbit | — |
| Organisasi | 512M x 16 | 256M x 16 |
| Clock Frequency | 1.33 GHz | — |
| Kadar Data | 2666 MT/s | 1600 Mbps/pin (800MHz) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V, -125mV, +250mV | — |
| Antaramuka | Parallel | Differential clock (CK, CK#) |
| Kemasan | 96-FBGA (8x14) | VFBGA-96 |
| Gambaran Suhu Operasi | -40°C to +105°C (AIT grade) | -40°C to +95°C (industrial) |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| I/O Type | 1.2V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable | — |
| AEC-Q100 | Qualified (AIT suffix) | — |
| RoHS | Compliant | Compliant |
| Density | — | 4Gb |
| Tegangan Pemberi Arus | — | 1.35V |
| Latensi CAS | — | 11, 12, 13 (programmable) |
| Burst Length | — | 8, 4 (with burst chop) |
| Number of Banks | — | 8 |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination | — | Yes (ODT) |
| Lead-Free | — | Yes |