MT40A512M16JY-07EAIT:B vs NT5CC256M16DP-DI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M16JY-07EAIT:B sa pamamagitan ng Micron Technology at NT5CC256M16DP-DI sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | MT40A512M16JY-07EAIT:B | NT5CC256M16DP-DI |
|---|---|---|
| Brand | Micron Technology | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR3L SDRAM |
| Laki ng Memory | 8 Gbit | — |
| Organisasyon | 512M x 16 | 256M x 16 |
| Clock Frequency | 1.33 GHz | — |
| Rate ng Data | 2666 MT/s | 1600 Mbps/pin (800MHz) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V, -125mV, +250mV | — |
| Interface | Parallel | Differential clock (CK, CK#) |
| Packhaging | 96-FBGA (8x14) | VFBGA-96 |
| Hanay ng Temperature na Operasyon | -40°C to +105°C (AIT grade) | -40°C to +95°C (industrial) |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| I/O Type | 1.2V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable | — |
| AEC-Q100 | Qualified (AIT suffix) | — |
| RoHS | Compliant | Compliant |
| Density | — | 4Gb |
| Volte ng Pagbibigay | — | 1.35V |
| Latensya ng CAS | — | 11, 12, 13 (programmable) |
| Burst Length | — | 8, 4 (with burst chop) |
| Number of Banks | — | 8 |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination | — | Yes (ODT) |
| Lead-Free | — | Yes |