MT40A512M16TB-062E:R vs H5AN8G6NDJR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M16TB-062E:R disebabkan oleh Micron Technology dan H5AN8G6NDJR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R ✓ Aktif
Pengandingan Spesifikasi
| Parametr | MT40A512M16TB-062E:R | H5AN8G6NDJR |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $60.00 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit (512M x 16) | — |
| Kadar Data | 3200 MT/s | 3200 Mbps (DDR4-3200) |
| Clock Frequency | 1600 MHz | — |
| Latensi CAS | 22 | 22 cycles (at 3200 Mbps) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| Suhu Operasi | 0°C to +95°C | — |
| Kemasan | 96-FBGA (7.5x13 mm) | 96-ball FBGA (13mm x 7.5mm) |
| Antaramuka | Parallel | — |
| Lebar Bus Data | 16 bits | — |
| Refresh Time | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Ciri-ciri | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |
| Status RoHS | Compliant | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| Tegangan Pemberi Arus | — | 1.2 V |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |