MT40A512M16TB-062E:R vs MT40A512M16TB-062E:J Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M16TB-062E:R disebabkan oleh Micron Technology dan MT40A512M16TB-062E:J disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
MT40A512M16TB-062E:R MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R ✓ Aktif
Micron Technology
MT40A512M16TB-062E:J MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron

MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron

MT40A512M16TB-062E:J ✓ Aktif

Pengandingan Spesifikasi

Parametr MT40A512M16TB-062E:R MT40A512M16TB-062E:J
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Status Stok In Stock —
Harga Unit (USD) $60.00 —
Jenis Ingatan DDR4 SDRAM SDRAM - DDR4
Saiz Ingatan 8 Gbit (512M x 16) 8Gbit (512M x 16)
Kadar Data 3200 MT/s —
Clock Frequency 1600 MHz 1.6 GHz
Latensi CAS 22 —
Supply Voltage (VDD/VDDQ) 1.2V ±60mV 1.2V ±60mV
VPP Voltage 2.5V (-125mV, +250mV) —
Suhu Operasi 0°C to +95°C —
Kemasan 96-FBGA (7.5x13 mm) 96-FBGA (7.5x13.5 mm)
Antaramuka Parallel —
Lebar Bus Data 16 bits —
Refresh Time 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C
I/O Type 1.2V pseudo open-drain 1.2V pseudo open-drain
Ciri-ciri Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration —
Status RoHS Compliant Compliant
Access Time — 19 ns
VPP Supply Voltage — 2.5V (-125mV, +250mV)
Internal Banks (x16) — 8 (2 groups of 4 banks each)
Prefetch Architecture — 8n-bit
Gambaran Suhu Operasi — 0°C to 95°C
Lead-Free — Yes
Jenis Pemasangan — Surface Mount

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