MT41K256M16RE-125:D vs MT41K256M16 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT41K256M16RE-125:D disebabkan oleh Micron Technology dan MT41K256M16 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16RE-125:D ✓ AktifPengandingan Spesifikasi
| Parametr | MT41K256M16RE-125:D | MT41K256M16 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM (1.35V) |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35 V | — |
| Kadar Data | 1600 MT/s | — |
| Latensi CAS | 11 | — |
| Kemasan | FBGA-96 (9x14 mm) | 96-ball FBGA |
| Suhu Operasi | 0C to +95C (TC) | [DATA_NEEDED: operating temperature range for the full MPN suffix] |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Burst Length | 8, 4 | — |
| On-Die Termination | Yes | Yes (ODT) |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| Ball Pitch | 0.8 mm | — |
| Saiz Ingatan | — | 4 Gbit |
| Supply Voltage (VDD/VDDQ) | — | 1.35 V (1.5V-compatible mode supported) |
| Banks | — | 8 |
| Jenis Pemasangan | — | Surface Mount |
| Speed Grade Options | — | -093 (2133 MT/s), -107 (1866 MT/s), -125 (1600 MT/s) [per family ordering options] |
| Antaramuka | — | Parallel, source-synchronous DDR |
| Refresh | — | 8K refresh cycles / 64 ms |
| CAS Latency Options | — | [DATA_NEEDED: CL options for the full MPN suffix] |
| Die Revision | — | Refer to DDR3 (1.5V) SDRAM Die Rev :E datasheet for 1.5V mode specs |
| Status RoHS | — | Compliant |
| ECCN | — | EAR99 |
| Lead Free | — | Yes (per DigiKey product listing) |