NT6AN8T0SA vs MT40A512M16JY-07EAIT:B Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT6AN8T0SA disebabkan oleh Nanya Technology dan MT40A512M16JY-07EAIT:B disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ AktifPengandingan Spesifikasi
| Parametr | NT6AN8T0SA | MT40A512M16JY-07EAIT:B |
|---|---|---|
| Merek | Nanya Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | LPDDR2 SDRAM | DDR4 SDRAM |
| Density | 2Gb | — |
| Organisasi | 64M x 32 | 512M x 16 |
| Tegangan Pemberi Arus | 1.2V | — |
| I/O Voltage | 1.2V | — |
| Kadar Data | 1066 Mbps (533 MHz) | 2666 MT/s |
| Gambaran Suhu Operasi | -30°C to +85°C | -40°C to +105°C (AIT grade) |
| Kemasan | FBGA | 96-FBGA (8x14) |
| Jenis Pemasangan | Surface Mount | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Refresh Period | 64ms at 85°C | — |
| Burst Length | 4 or 8 | — |
| On-Die Termination | Yes | — |
| DLL | Yes | — |
| Saiz Ingatan | — | 8 Gbit |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Voltage | — | 2.5V, -125mV, +250mV |
| Antaramuka | — | Parallel |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| I/O Type | — | 1.2V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable |
| AEC-Q100 | — | Qualified (AIT suffix) |
| RoHS | — | Compliant |