RTAX1000SL-CGS624V vs RTAX2000SL-CGS624V Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci RTAX1000SL-CGS624V disebabkan oleh Microchip Technology dan RTAX2000SL-CGS624V disebabkan oleh Microchip Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Microchip Technology
RTAX1000SL-CGS624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CGS624V ✓ AktifMicrochip Technology
RTAX2000SL-CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-CGS624V ✓ AktifPengandingan Spesifikasi
| Parametr | RTAX1000SL-CGS624V | RTAX2000SL-CGS624V |
|---|---|---|
| Merek | Microchip Technology | Microchip Technology |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| System Gates | 1,000,000 | — |
| Logic Cells | 18144 | — |
| CLBs | 12096 | — |
| Technology | Digital CMOS antifuse | CMOS antifuse (nonvolatile) |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | RTAX-S/SL Radiation-Tolerant FPGA |
| Programmability | One-Time Programmable (antifuse), live at power-up | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | 540 kbits with optional EDAC protection |
| Clock Resources | Segmentable clocks, chip-wide highway routing | — |
| Carry Logic | Yes (dedicated fast carry chain) | — |
| Kemasan | CGS624 (624-column ceramic grid array) | CG624 ceramic package |
| Jenis Pemasangan | Surface Mount | — |
| Application Domain | Space-flight systems | Space-flight systems |
| Radiation Tolerance | Radiation-tolerant (TID/SEE per manufacturer qualification) | — |
| Max Family Density | 4,000,000 equivalent system gates | — |
| Base Commercial Family | Axcelerator | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Tegangan Pemberi Arus | [DATA_NEEDED: core supply voltage] | — |
| Maximum User I/O | [DATA_NEEDED: maximum user I/O count] | — |
| Equivalent System Gates | — | 2000000 |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (maximum) | — | 684 |
| Total Ionizing Dose (TID) | — | 300 krad (Si) functional / 200 krad (Si) parametric |
| Single-Event Upset Rate | — | Less than 1E-10 errors per bit-day |
| Configuration | — | One-time programmable antifuse, live at power-up |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clock Architecture | — | Segmentable clock structures |
| Routing | — | Chip-wide highway routing, carry logic |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Speed Grade | — | [DATA_NEEDED: speed grade] |
| System Frequency (typical) | — | [DATA_NEEDED: system frequency] |