RTAX1000SL-CGS624V vs RTAX2000SL-CGS624V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX1000SL-CGS624V sa pamamagitan ng Microchip Technology at RTAX2000SL-CGS624V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX1000SL-CGS624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CGS624V ✓ NakahandaMicrochip Technology
RTAX2000SL-CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-CGS624V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX1000SL-CGS624V | RTAX2000SL-CGS624V |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| System Gates | 1,000,000 | — |
| Logic Cells | 18144 | — |
| CLBs | 12096 | — |
| Technology | Digital CMOS antifuse | CMOS antifuse (nonvolatile) |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | RTAX-S/SL Radiation-Tolerant FPGA |
| Programmability | One-Time Programmable (antifuse), live at power-up | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | 540 kbits with optional EDAC protection |
| Clock Resources | Segmentable clocks, chip-wide highway routing | — |
| Carry Logic | Yes (dedicated fast carry chain) | — |
| Packhaging | CGS624 (624-column ceramic grid array) | CG624 ceramic package |
| Uri ng Pagpapasok | Surface Mount | — |
| Application Domain | Space-flight systems | Space-flight systems |
| Radiation Tolerance | Radiation-tolerant (TID/SEE per manufacturer qualification) | — |
| Max Family Density | 4,000,000 equivalent system gates | — |
| Base Commercial Family | Axcelerator | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Volte ng Pagbibigay | [DATA_NEEDED: core supply voltage] | — |
| Maximum User I/O | [DATA_NEEDED: maximum user I/O count] | — |
| Equivalent System Gates | — | 2000000 |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (maximum) | — | 684 |
| Total Ionizing Dose (TID) | — | 300 krad (Si) functional / 200 krad (Si) parametric |
| Single-Event Upset Rate | — | Less than 1E-10 errors per bit-day |
| Configuration | — | One-time programmable antifuse, live at power-up |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clock Architecture | — | Segmentable clock structures |
| Routing | — | Chip-wide highway routing, carry logic |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Speed Grade | — | [DATA_NEEDED: speed grade] |
| System Frequency (typical) | — | [DATA_NEEDED: system frequency] |