TJ30S06M3L(T6L1 vs IRF4905PBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci TJ30S06M3L(T6L1 disebabkan oleh Toshiba dan IRF4905PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | TJ30S06M3L(T6L1 | IRF4905PBF |
|---|---|---|
| Merek | Toshiba | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDSS) | -60 V | — |
| Gate-Source Voltage (VGSS) | +10 V / -20 V | — |
| Continuous Drain Current (ID) @ Tc=25°C | -30 A | — |
| Power Dissipation (PD) @ Tc=25°C | 68 W | — |
| RDS(ON) Max @ VGS=-10 V | 21.8 mΩ | — |
| RDS(ON) Typ @ VGS=-10 V | 16.8 mΩ | — |
| Gate Threshold Voltage (Vth) | -3.0 V (typ) @ VDS=-1 mA | — |
| Drain Leakage (IDSS) Max | -10 µA @ VDS=-60 V | — |
| Input Capacitance (Ciss) | 3950 pF | — |
| Gambaran Suhu Operasi | -55°C to +175°C (Tj) | -55 °C to +175 °C (junction) |
| Kemasan | DPAK+ (TO-252-3) | TO-220AB (through-hole) |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Automotive Qualification | AEC-Q101 | — |
| Technology | U-MOS (Silicon P-Channel MOS) | HEXFET (IR MOSFET) |
| FET Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC | — | -74 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC | — | 200 W |
| On-Resistance RDS(on) max at VGS=-10V | — | 20 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | — | 120 nC |
| Pin Configuration | — | Gate - Drain - Source (left to right) |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free, RoHS compliant) |
| Aras MSL | — | 1 (not moisture-sensitive for TO-220) |