CY14B101KA-SP25XIT - 1Mbit nvSRAM 25ns with RTC | Infineon
MPN: CY14B101KA-SP25XIT β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.83 | $0.83 |
| 10 | $0.78 | $7.80 |
| 100 | $0.72 | $72.00 |
| 500 | $0.68 | $340.00 |
| 1,000 | $0.62 | $620.00 |
CY14B101KA-SP25XIT Overview
An nvSRAM (non-volatile SRAM) is a memory device that combines the infinite read/write endurance and fast random access of static RAM with the non-volatility of EEPROM or Flash. In the memory hierarchy, it sits between SRAM (volatile, fast) and Flash/EEPROM (slow writes, limited endurance). Cypress QuantumTrap nvSRAM stores an automatic copy (AutoStore) of the SRAM contents into non-volatile QuantumTrap cells on power loss, requiring no external capacitor for store operations in this family, and restoring data on power-up.
Key features include the 25 ns parallel SRAM access time, unlimited SRAM read/write endurance, 20-year non-volatile data retention, and a full-featured RTC with alarm and a backup power capability. The monolithic integration of nvSRAM plus RTC eliminates a separate RTC chip and battery-backed SRAM module, reducing board area and failure points.
Architecturally, the device merges a fast SRAM core with QuantumTrap nonvolatile elements; data resides in SRAM during normal operation while a nonvolatile shadow copy is maintained or committed via store events (hardware, software, or AutoStore on power-down). Write protection and hardware store (HSB) pins support safe power-fail management.
Typical applications include industrial data loggers, PLCs and factory automation controllers, network equipment configuration storage, metering systems, and avionics/medical equipment requiring fast non-volatile scratchpad memory plus accurate timekeeping.
Design consideration: guarantee the supply sequencing and observe the minimum VCC detect thresholds so AutoStore completes during brown-out; ensure the HSB pin is properly pulled up per the manufacturer datasheet.
This page synthesizes distributor pricing, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for CY14B101KA-SP25XIT β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
CY14B101KA-SP25XI
β Drop-Inπ Reference alternative (not in catalog)
CY14B101LA-SP25XIT
β Drop-Inπ Reference alternative (not in catalog)
CY14B101LA-SP25XI
β Drop-Inπ Reference alternative (not in catalog)
CY14B101MA-SP25XI
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
CY14B101KA-SP25XIT Maximum Ratings & Electrical Characteristics
| Memory Type | nvSRAM (non-volatile SRAM) with RTC |
| Memory Size | 1 Mbit |
| Organization | 128K x 8 |
| Access Time | 25 ns |
| Supply Voltage | 2.7 V to 3.6 V (3V class) |
| Maximum Supply Voltage | 3.6 V |
| Interface | Parallel |
| Non-volatile Data Retention | 20 years |
| SRAM Read/Write Endurance | Unlimited |
| Real-Time Clock | Yes, full-featured RTC with alarm |
| Non-volatile Technology | QuantumTrap with AutoStore |
| Temperature Grade | Industrial |
| Package | 48-pin SSOP |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (T/R) |
| RoHS Status | Compliant |
CY14B101KA-SP25XIT 48-pin ssop Pin Configuration Guide
Pin configuration for CY14B101KA-SP25XIT (48-pin ssop package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for CY14B101KA-SP25XIT.
Refer to the datasheet for full pin configuration.
Typical Applications
CY14B101KA-SP25XIT is suitable for 6 applications: Industrial Data Logging, PLC and Factory Automation Controllers, Utility Metering Systems, Networking and Telecom Equipment, Medical and Diagnostic Equipment, Point-of-Sale and Embedded Computing.
Industrial Data Logging
In industrial data loggers, the CY14B101KA-SP25XIT records process values, faults, and timestamps that must survive power interruptions without battery maintenance. The 25 ns access time allows the logging MCU to write events at full SRAM speed with zero write latency, while QuantumTrap AutoStore commits the entire 128K x 8 array to non-volatile storage within milliseconds of a power fail event. The integrated RTC timestamps each record, removing a separate RTC IC and coin cell. With unlimited SRAM endurance and 20-year retention, the logger can sustain millions of write cycles over a 20-year service life in PLC racks, motor control panels, and remote monitoring nodes where battery replacement is impractical.
Recommended
PLC and Factory Automation Controllers
Programmable logic controllers store retentive register data, ladder-logic parameters, and fault histories that must persist across power cycles. The CY14B101KA-SP25XIT's parallel interface and 25 ns access time connect directly to processor buses without wait states, so scan-cycle performance is unaffected by memory access. AutoStore guarantees that all retentive data survives unplanned power loss, meeting industrial robustness expectations, while the RTC provides alarm scheduling and event ordering for diagnostic software. Its industrial temperature grade and 3V-class supply integrate easily into standard 3.3V control backplanes, and the monolithic nvSRAM-plus-RTC integration reduces the bill of materials versus battery-backed SRAM modules used in legacy PLC designs.
Recommended
Utility Metering Systems
Electricity, water, and gas meters require tamper-resistant storage of billing registers, load profiles, and firmware logs plus accurate time-of-use clocking. The CY14B101KA-SP25XIT provides 1 Mbit of fast scratch and profile storage with 20-year non-volatile retention, so meter data survives outages and battery-free designs pass utility lifetime requirements. The on-chip RTC with alarm supports tariff switching and demand-interval recording. The 25 ns parallel access lets low-power metering SoCs log consumption samples at high rates without write-cycle penalties typical of Flash or EEPROM. Its monolithic integration and AutoStore behavior eliminate the coin cell and battery-socket failure modes that dominate meter field-return statistics in utility deployments.
Recommended
Networking and Telecom Equipment
Routers, switches, and line cards store configuration images, MAC addresses, and crash dumps in non-volatile memory that must be rewritten frequently during commissioning and field updates. The CY14B101KA-SP25XIT accepts unlimited SRAM-speed writes, so configuration save operations complete in microseconds rather than the seconds required by Flash programming, and there is no erase-wear budget to manage. The 128K x 8 parallel organization maps cleanly onto legacy processor local buses, and the 48-SSOP footprint retrofits into cards designed for battery-backed SRAM. The RTC supplies time-stamping for syslog buffering when NTP is unavailable at boot, improving fault forensics in telecom racks.
Recommended
Medical and Diagnostic Equipment
Patient monitors, infusion pumps, and diagnostic instruments must retain calibration constants, audit trails, and last-therapy settings through power failures without risk of battery corrosion in sterile environments. The CY14B101KA-SP25XIT's QuantumTrap nvSRAM preserves this data for 20 years with no battery, while its 25 ns access time keeps calibration reads transparent to real-time control loops. The integrated RTC timestamps audit logs required by medical device quality systems. Unlimited write endurance supports frequent calibration updates, and the industrial-grade 48-SSOP package suits the 3.3V rails common on medical electronics boards, making it a drop-in successor to battery-backed SRAM in regulated equipment.
Recommended
Point-of-Sale and Embedded Computing
POS terminals, kiosks, and embedded controllers journal transactions and security counters into non-volatile memory that endures high write traffic and frequent brown-outs. The CY14B101KA-SP25XIT's unlimited SRAM endurance handles continuous journaling without the wear-leveling complexity of Flash, and AutoStore commits data faster than a software flush on power-fail, minimizing transaction loss. The 25 ns access time and parallel bus suit both legacy x86-style embedded designs and modern MCU systems. The RTC maintains clock integrity for receipt timestamping and certificate validity checks during offline operation, and the compact 48-SSOP package fits dense handheld terminal PCBs constrained by ergonomic enclosures.
Recommended
Recommended Products Summary
Engineering reference data for CY14B101KA-SP25XIT β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | CY14B101KA-SP25XI | CY14B101LA-SP25XIT | CY14B101LA-SP25XI | CY14B101MA-SP25XI |
|---|---|---|---|---|---|
| Package | 48-SSOP | 48-SSOP - same | 48-SSOP - same | 48-SSOP - same | 48-SSOP - same |
| Brand | Infineon (Cypress Semiconductor) | Infineon (Cypress) | Infineon (Cypress) | Infineon (Cypress) | Infineon (Cypress) |
| Memory Size | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) | 1 Mbit (64K x 16) |
| Access Time | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns |
| Real-Time Clock | Yes | Yes | No | No | Yes |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Data Retention | 20 years | 20 years | 20 years | 20 years | 20 years |
Key Differentiators
- Integrated real-time clock saves a second IC (vs CY14B101LA-SP25XIT)
- Battery-free non-volatility via AutoStore (vs Legacy battery-backed SRAM)
- SRAM-speed writes (vs Serial EEPROM/Flash alternatives)
Design Notes
Guarantee a controlled power-down so AutoStore completes: the device detects the VCC dropout threshold and commits SRAM to QuantumTrap cells automatically, but brown-outs that ride near the threshold can cause repeated store cycles. Use a supervisor or adequately sized bulk capacitance so VCC collapses decisively once below threshold. Estimated: with a 100 mA load and 100 uF bulk capacitance, decay from 3.3V to 2.7V takes roughly 1 ms - confirm this exceeds the datasheet store-time requirement before finalizing the capacitor.
Treat the parallel bus as a short-terminated memory interface: at 25 ns access the cycle rate approaches 40 MHz, so keep address/data traces under about 10 cm without series termination. Place 0.1 uF decoupling directly on VCC pins and follow the 48-SSOP land pattern (0.300 inch body, MO-119 style) from SnapEDA footprints. Pull the HSB (hardware store) pin high with the recommended resistor per the Infineon datasheet so unintended stores do not occur during MCU reset.
Do not treat the RTC backup input like an SRAM supply: without a backup source the clock stops (memory data is still retained for 20 years). Also note the difference between KA (with RTC) and LA (without RTC) suffixes when populating BOMs - they are pin-compatible but RTC-driven firmware will fail on LA parts. Finally, XIT is tape-and-reel and XI is tube; ordering the wrong suffix changes reel quantities, not electrical behavior.
Compliance Information
RoHS compliant per digchip family specification and Infineon distributor listings. REACH, halogen-free, and conflict-minerals status not stated in provided data - request certificates from Infineon for production use.
