CY14B101KA-SP25XIT - 1Mbit nvSRAM 25ns with RTC | Infineon
Артикул: CY14B101KA-SP25XIT ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.83 | $0,83 |
| 10 | $0.78 | $7,80 |
| 100 | $0.72 | $72,00 |
| 500 | $0.68 | $340,00 |
| 1.000 | $0.62 | $620,00 |
CY14B101KA-SP25XIT Обзор
An nvSRAM (non-volatile SRAM) is a memory device that combines the infinite read/write endurance and fast random access of static RAM with the non-volatility of EEPROM or Flash. In the memory hierarchy, it sits between SRAM (volatile, fast) and Flash/EEPROM (slow writes, limited endurance). Cypress QuantumTrap nvSRAM stores an automatic copy (AutoStore) of the SRAM contents into non-volatile QuantumTrap cells on power loss, requiring no external capacitor for store operations in this family, and restoring data on power-up.
Key features include the 25 ns parallel SRAM access time, unlimited SRAM read/write endurance, 20-year non-volatile data retention, and a full-featured RTC with alarm and a backup power capability. The monolithic integration of nvSRAM plus RTC eliminates a separate RTC chip and battery-backed SRAM module, reducing board area and failure points.
Architecturally, the device merges a fast SRAM core with QuantumTrap nonvolatile elements; data resides in SRAM during normal operation while a nonvolatile shadow copy is maintained or committed via store events (hardware, software, or AutoStore on power-down). Write protection and hardware store (HSB) pins support safe power-fail management.
Typical applications include industrial data loggers, PLCs and factory automation controllers, network equipment configuration storage, metering systems, and avionics/medical equipment requiring fast non-volatile scratchpad memory plus accurate timekeeping.
Design consideration: guarantee the supply sequencing and observe the minimum VCC detect thresholds so AutoStore completes during brown-out; ensure the HSB pin is properly pulled up per the manufacturer datasheet.
This page synthesizes distributor pricing, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet.
Аналоги без доработки для CY14B101KA-SP25XIT — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
CY14B101KA-SP25XI
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
CY14B101LA-SP25XIT
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
CY14B101LA-SP25XI
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
CY14B101MA-SP25XI
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
CY14B101KA-SP25XIT Максимальные параметры и электрические характеристики
| Тип памяти | nvSRAM (non-volatile SRAM) with RTC |
| Размер памяти | 1 Mbit |
| Организация памяти | 128K x 8 |
| Access Time | 25 ns |
| Напряжение питания | 2.7 V to 3.6 V (3V class) |
| Maximum Supply Voltage | 3.6 V |
| Интерфейс | Parallel |
| Non-volatile Data Retention | 20 years |
| SRAM Read/Write Endurance | Unlimited |
| Real-Time Clock | Yes, full-featured RTC with alarm |
| Non-volatile Technology | QuantumTrap with AutoStore |
| Temperature Grade | Industrial |
| Корпус | 48-pin SSOP |
| Тип монтажа | Surface Mount |
| Packaging | Tape & Reel (T/R) |
| Статус RoHS | Compliant |
Руководство по цоколевке CY14B101KA-SP25XIT в корпусе 48-pin ssop
Цоколевка для CY14B101KA-SP25XIT (корпус 48-pin ssop). Эта цифровая ИС включает выводы GPIO, интерфейсы связи (UART, SPI, I2C) и выводы питания. Обратитесь к техническому описанию производителя для альтернативных функций выводов и вариантов конфигурации. Необходимо для проектирования встраиваемых систем и трассировки печатных плат.
Нет подробных данных о распиновке для CY14B101KA-SP25XIT.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
CY14B101KA-SP25XIT подходит для 6 применениеs: Industrial Data Logging, PLC and Factory Automation Controllers, Utility Metering Systems, Networking and Telecom Equipment, Medical and Diagnostic Equipment, Point-of-Sale and Embedded Computing.
Industrial Data Logging
In industrial data loggers, the CY14B101KA-SP25XIT records process values, faults, and timestamps that must survive power interruptions without battery maintenance. The 25 ns access time allows the logging MCU to write events at full SRAM speed with zero write latency, while QuantumTrap AutoStore commits the entire 128K x 8 array to non-volatile storage within milliseconds of a power fail event. The integrated RTC timestamps each record, removing a separate RTC IC and coin cell. With unlimited SRAM endurance and 20-year retention, the logger can sustain millions of write cycles over a 20-year service life in PLC racks, motor control panels, and remote monitoring nodes where battery replacement is impractical.
Рекомендуется
PLC and Factory Automation Controllers
Programmable logic controllers store retentive register data, ladder-logic parameters, and fault histories that must persist across power cycles. The CY14B101KA-SP25XIT's parallel interface and 25 ns access time connect directly to processor buses without wait states, so scan-cycle performance is unaffected by memory access. AutoStore guarantees that all retentive data survives unplanned power loss, meeting industrial robustness expectations, while the RTC provides alarm scheduling and event ordering for diagnostic software. Its industrial temperature grade and 3V-class supply integrate easily into standard 3.3V control backplanes, and the monolithic nvSRAM-plus-RTC integration reduces the bill of materials versus battery-backed SRAM modules used in legacy PLC designs.
Рекомендуется
Utility Metering Systems
Electricity, water, and gas meters require tamper-resistant storage of billing registers, load profiles, and firmware logs plus accurate time-of-use clocking. The CY14B101KA-SP25XIT provides 1 Mbit of fast scratch and profile storage with 20-year non-volatile retention, so meter data survives outages and battery-free designs pass utility lifetime requirements. The on-chip RTC with alarm supports tariff switching and demand-interval recording. The 25 ns parallel access lets low-power metering SoCs log consumption samples at high rates without write-cycle penalties typical of Flash or EEPROM. Its monolithic integration and AutoStore behavior eliminate the coin cell and battery-socket failure modes that dominate meter field-return statistics in utility deployments.
Рекомендуется
Networking and Telecom Equipment
Routers, switches, and line cards store configuration images, MAC addresses, and crash dumps in non-volatile memory that must be rewritten frequently during commissioning and field updates. The CY14B101KA-SP25XIT accepts unlimited SRAM-speed writes, so configuration save operations complete in microseconds rather than the seconds required by Flash programming, and there is no erase-wear budget to manage. The 128K x 8 parallel organization maps cleanly onto legacy processor local buses, and the 48-SSOP footprint retrofits into cards designed for battery-backed SRAM. The RTC supplies time-stamping for syslog buffering when NTP is unavailable at boot, improving fault forensics in telecom racks.
Рекомендуется
Medical and Diagnostic Equipment
Patient monitors, infusion pumps, and diagnostic instruments must retain calibration constants, audit trails, and last-therapy settings through power failures without risk of battery corrosion in sterile environments. The CY14B101KA-SP25XIT's QuantumTrap nvSRAM preserves this data for 20 years with no battery, while its 25 ns access time keeps calibration reads transparent to real-time control loops. The integrated RTC timestamps audit logs required by medical device quality systems. Unlimited write endurance supports frequent calibration updates, and the industrial-grade 48-SSOP package suits the 3.3V rails common on medical electronics boards, making it a drop-in successor to battery-backed SRAM in regulated equipment.
Рекомендуется
Point-of-Sale and Embedded Computing
POS terminals, kiosks, and embedded controllers journal transactions and security counters into non-volatile memory that endures high write traffic and frequent brown-outs. The CY14B101KA-SP25XIT's unlimited SRAM endurance handles continuous journaling without the wear-leveling complexity of Flash, and AutoStore commits data faster than a software flush on power-fail, minimizing transaction loss. The 25 ns access time and parallel bus suit both legacy x86-style embedded designs and modern MCU systems. The RTC maintains clock integrity for receipt timestamping and certificate validity checks during offline operation, and the compact 48-SSOP package fits dense handheld terminal PCBs constrained by ergonomic enclosures.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для CY14B101KA-SP25XIT — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | CY14B101KA-SP25XI | CY14B101LA-SP25XIT | CY14B101LA-SP25XI | CY14B101MA-SP25XI |
|---|---|---|---|---|---|
| Package | 48-SSOP | 48-SSOP - same | 48-SSOP - same | 48-SSOP - same | 48-SSOP - same |
| Brand | Infineon (Cypress Semiconductor) | Infineon (Cypress) | Infineon (Cypress) | Infineon (Cypress) | Infineon (Cypress) |
| Memory Size | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) | 1 Mbit (64K x 16) |
| Access Time | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns |
| Real-Time Clock | Yes | Yes | No | No | Yes |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Data Retention | 20 years | 20 years | 20 years | 20 years | 20 years |
Ключевые отличия
- Integrated real-time clock saves a second IC (против CY14B101LA-SP25XIT)
- Battery-free non-volatility via AutoStore (против Legacy battery-backed SRAM)
- SRAM-speed writes (против Serial EEPROM/Flash alternatives)
Заметки по проектированию
Guarantee a controlled power-down so AutoStore completes: the device detects the VCC dropout threshold and commits SRAM to QuantumTrap cells automatically, but brown-outs that ride near the threshold can cause repeated store cycles. Use a supervisor or adequately sized bulk capacitance so VCC collapses decisively once below threshold. Estimated: with a 100 mA load and 100 uF bulk capacitance, decay from 3.3V to 2.7V takes roughly 1 ms - confirm this exceeds the datasheet store-time requirement before finalizing the capacitor.
Treat the parallel bus as a short-terminated memory interface: at 25 ns access the cycle rate approaches 40 MHz, so keep address/data traces under about 10 cm without series termination. Place 0.1 uF decoupling directly on VCC pins and follow the 48-SSOP land pattern (0.300 inch body, MO-119 style) from SnapEDA footprints. Pull the HSB (hardware store) pin high with the recommended resistor per the Infineon datasheet so unintended stores do not occur during MCU reset.
Do not treat the RTC backup input like an SRAM supply: without a backup source the clock stops (memory data is still retained for 20 years). Also note the difference between KA (with RTC) and LA (without RTC) suffixes when populating BOMs - they are pin-compatible but RTC-driven firmware will fail on LA parts. Finally, XIT is tape-and-reel and XI is tube; ordering the wrong suffix changes reel quantities, not electrical behavior.
Информация о соответствии
RoHS compliant per digchip family specification and Infineon distributor listings. REACH, halogen-free, and conflict-minerals status not stated in provided data - request certificates from Infineon for production use.
