IDWD10G200C5XKSA1 - 2000V 35A CoolSiC 5G SiC Schottky Diode | Infineon
MPN: IDWD10G200C5XKSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $9.85 | $9.85 |
| 10 | $8.92 | $89.20 |
| 100 | $7.65 | $765.00 |
| 500 | $6.74 | $3,370.00 |
| 1,000 | $5.98 | $5,980.00 |
IDWD10G200C5XKSA1 Overview
A silicon-carbide Schottky diode is a unipolar power rectifier built on a wide-bandgap SiC substrate, producing a majority-carrier device with no reverse-recovery charge (Qrr β 0). Compared to silicon PiN rectifiers, SiC Schottky diodes eliminate reverse-recovery losses, allow higher switching frequencies, and operate at junction temperatures typically up to 175Β°C. They belong to the discrete power-semiconductor family within the power-electronics hierarchy: SiC Schottky diode β Schottky rectifier β rectifier diode β discrete semiconductor β power semiconductor.
Key features of the IDWD10G200C5XKSA1 include a typical forward voltage of approximately 1.5V at rated current, zero reverse-recovery charge, a maximum operating junction temperature of 175Β°C, and a creepage/clearance distance compliant with reinforced insulation for industrial 1500 VDC photovoltaic and energy-storage inverters. The PG-TO247-2-U01 package provides a robust mechanical outline and a low junction-to-case thermal resistance suitable for high-power through-hole mounting.
The CoolSiC 5G fifth-generation SiC Schottky technology integrates a merged-PiN Schottky (MPS) cell structure to improve surge-current handling while keeping reverse-recovery loss negligible. The TO-247-2-U01 mechanical outline is mechanically compatible with industry-standard TO-247-2 discrete sockets and heatsink clips, simplifying mechanical integration. The .XT interconnect reduces thermal resistance and improves power-cycling capability versus conventional die-attach.
Typical applications include solar string inverters and central PV inverters, 1500 VDC energy-storage systems (ESS), industrial UPS, EV charging-station PFC and DC-DC stages, and high-voltage welding power supplies. The diode is particularly well suited to high-frequency bridgeless totem-pole PFC and full-bridge/half-bridge LLC stages where its absence of reverse-recovery loss directly reduces switching losses and enables smaller magnetics.
When designing with this part, ensure the heatsink selection keeps the junction below 150Β°C at full-load continuous current to maximize long-term reliability; Infineon recommends operating at no more than 80% of the maximum ratings for optimum lifetime. The TO-247-2-U01 tab is electrically isolated only by thermal compound and the heatsink; check isolation requirements for your safety standard before mounting.
This page synthesizes distributor pricing, drop-in alternatives, design notes and application examples not found in the manufacturer datasheet alone.
Drop-in alternatives for IDWD10G200C5XKSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IDW20G200C5B
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IDWD30G200C5XKSA1
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IDWD15G200C5XKSA1
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MSC035SMA200B
β Drop-Inπ Reference alternative (not in catalog)
IDWD10G200C5XKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolSiC 5G (Generation 5) |
| Diode Type | Silicon Carbide (SiC) Schottky Diode |
| Configuration | Single / Dual Cathode |
| Repetitive Peak Reverse Voltage (VRRM) | 2000 V |
| Continuous Forward Current (IF) at TC=25Β°C | 35 A |
| Reverse Recovery Charge (Qrr) | 0 nC (no reverse recovery, SiC Schottky) |
| Maximum Junction Temperature (Tj max) | 175 Β°C |
| Operating Junction Temperature Range | -40 Β°C to +175 Β°C |
| Package | PG-TO247-2-U01 (through-hole) |
| Mounting Type | Through Hole |
| Die-Attach Technology | .XT interconnection |
| Humidity Robustness | HV-H3TRB qualified |
| Typical Target DC-Link Voltage | Up to 1500 VDC |
| RoHS Compliance | Compliant |
| Halogen-Free | Yes |
| Lead Finish | Matte tin (Pb-free) |
IDWD10G200C5XKSA1 Pin Configuration
| Pin 1 | Anode β Positive terminal of the SiC Schottky diode |
| Pin 2 | Cathode β Negative terminal; electrically common with the metal mounting tab |
Forward Current vs Forward Voltage (typical)
Typical Applications
IDWD10G200C5XKSA1 is suitable for 6 applications: 1500 VDC Solar String Inverters, Energy Storage System (ESS) DC-DC Converters, EV DC Fast Charging Stations, Industrial UPS and Three-Phase PFC, High-Voltage Welding Power Supplies, High-Frequency LLC and Phase-Shifted Full-Bridge Converters.
1500 VDC Solar String Inverters
The IDWD10G200C5XKSA1 is well suited to 1500 VDC solar string inverters as the boost-diode in the PFC stage and as the freewheeling diode in the DC-DC output stage. Its 2000V VRRM gives ample margin above 1500 VDC, and the zero-Qrr SiC Schottky cell dramatically reduces reverse-recovery loss versus silicon PiN. The PG-TO247-2-U01 package dissipates the 30-50W typical inverter loss to a standard clip-on heatsink. This improves CEC-weighted efficiency by 0.3-0.6% and allows a 50% reduction in heatsink mass.
Recommended
Energy Storage System (ESS) DC-DC Converters
In 1500 VDC battery energy-storage systems, the IDWD10G200C5XKSA1 serves as the rectifier/ORing diode in bidirectional DC-DC stages. Its 35A continuous rating handles typical 50-100kW stack currents at the module level, and the 2000V rating covers the 1500 VDC bus plus 1.5x transient margin. SiC Schottky zero-Qrr enables higher switching frequency, shrinking the isolation-transformer and output-filter footprint. The 175Β°C Tj max supports liquid-cooled rack designs where ambient is 60-80Β°C.
Recommended
EV DC Fast Charging Stations
The IDWD10G200C5XKSA1 is used in 50-350kW EV DC fast chargers as the rectifier diode on the AC-side PFC output and as the freewheeling diode in the isolated DC-DC output stage. The 35A per-device rating allows paralleling 2-3 parts for 100kW+ charging modules. SiC's zero Qrr is critical for the bridgeless totem-pole PFC topology common in modern chargers, eliminating the body-diode recovery that would otherwise limit CCM operation at high line. The TO-247-2-U01 outline is industry-standard and simplifies UL/IEC compliance documentation.
Recommended
Industrial UPS and Three-Phase PFC
In industrial three-phase 400/480VAC UPS systems, the IDWD10G200C5XKSA1 acts as the rectifier in the Vienna rectifier and 3-level NPC PFC topologies. The 2000V rating is well above the 800V DC-link typical in these designs, providing large safety margin. SiC's near-zero Qrr eliminates cross-conduction loss and reduces EMI filter size, allowing the UPS to meet EN 62040-3 with a smaller common-mode choke. The PG-TO247-2-U01 mechanical outline supports screw-mounted heatsink assemblies standard in industrial cabinets.
Recommended
High-Voltage Welding Power Supplies
The IDWD10G200C5XKSA1 fits the output rectifier of inverter welding machines where the secondary rectifier sees >100V at several hundred amps. The 2000V rating handles the resonant reset overshoot of full-bridge topologies, and the 35A rating can be paralleled for 200-500A welding outputs. The 175Β°C Tj max and HV-H3TRB-qualified humidity robustness suit the harsh, hot, sometimes damp environments of industrial welding bays. CoolSiC's reverse-recovery-free switching reduces snubber loss and improves arc stability.
Recommended
High-Frequency LLC and Phase-Shifted Full-Bridge Converters
In 50-200 kHz isolated LLC and phase-shifted full-bridge DC-DC converters, the IDWD10G200C5XKSA1 serves as the secondary-side rectifier on the 100-200V output stage. The zero-Qrr SiC Schottky behavior is critical at these frequencies where silicon PiN recovery would consume 5-10% of total power. The 35A rating suits 5-10kW telecom and server power supplies, and the PG-TO247-2-U01 outline accommodates top-side cooling on the planar magnetics PCB. Designers can shrink the output inductor and transformer by 30-40% versus 50 kHz silicon designs.
Recommended
Recommended Products Summary
Engineering reference data for IDWD10G200C5XKSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IDW20G200C5B | IDWD30G200C5XKSA1 | MSC035SMA200B |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Microchip |
| Package | PG-TO247-2-U01 | PG-TO247-2-U01 - same | PG-TO247-2-U01 - same | TO-247-2 - same |
| VRRM (Repetitive Peak Reverse Voltage) | 2000 V | 2000 V | 2000 V | 2000 V |
| Continuous Forward Current (TC=25Β°C) | 35 A | 20 A (-43%) | 30 A (-14%) | 35 A (same) |
| Diode Technology | SiC Schottky (CoolSiC 5G) | SiC Schottky (CoolSiC 5G) | SiC Schottky (CoolSiC 5G) | SiC Schottky |
| Reverse Recovery Charge (Qrr) | 0 nC (no recovery) | 0 nC | 0 nC | 0 nC |
| Maximum Junction Temperature | 175 Β°C | 175 Β°C | 175 Β°C | 175 Β°C |
| Die-Attach Technology | .XT interconnection | .XT interconnection | .XT interconnection | Standard solder |
Key Differentiators
- Highest continuous current in 2000V SiC Schottky PG-TO247-2-U01 family (vs IDW20G200C5B)
- .XT die-attach reduces thermal resistance and improves power cycling (vs MSC035SMA200B (Microchip))
- HV-H3TRB-qualified humidity robustness (vs Generic 2000V SiC Schottky competitors)
Design Notes
Estimated: at IF=35A, VFβ1.5V, the IDWD10G200C5XKSA1 dissipates roughly 52W of conduction loss in continuous conduction. With PG-TO247-2-U01 junction-to-case thermal resistance of approximately 0.3 Β°C/W, the junction rises 15.6Β°C per 1W of dissipation above case. A heatsink must keep TC below 100Β°C at full load, so heatsink-to-ambient thermal resistance must be <1.0 Β°C/W for 50W dissipation and 75Β°C ambient. Use a clip-on or screw-mounted aluminum heatsink β₯100mm length with forced-air cooling at >2 m/s for worst-case margin.
For through-hole PG-TO247-2-U01 mounting, use a 1.6-2.0mm FR-4 PCB with 2 oz copper pour around the anode and cathode pads to spread heat and reduce trace resistance. The mounting tab hole should be 3.5-4.0mm diameter for M3 screw clearance, and a thermal interface material (Bergquist Gap Pad or equivalent) must be used between tab and heatsink. Maintain at least 8mm creepage distance between the tab (cathode potential) and any user-accessible metalwork for reinforced insulation per IEC 62109.
Do not parallel IDWD10G200C5XKSA1 devices without gate-resistance-style ballast (not applicable to diodes, but use individual thermal fuses and matched heatsinks). SiC Schottky diodes have a positive temperature coefficient on VF, so they self-balance current sharing thermally, but small asymmetries in heatsink coupling can still create 10-20% imbalance. Do not assume the metal tab is isolated; it is at cathode potential. Do not exceed 80% of VRRM (i.e., do not exceed 1600V reverse voltage) for optimum lifetime per Infineon derating guidance.
In high-frequency switching converters (50-200 kHz), keep the commutation loop (anode lead β transformer secondary winding β cathode β heatsink tab β back to anode) as small as possible to minimize parasitic inductance. Excessive loop inductance causes voltage overshoot that can exceed the 2000V VRRM rating. Use a low-inductance laminated bus or sandwiched winding construction. Add a 5-10Ξ© RC snubber (1nF + 5-10Ξ©) across the diode if overshoot exceeds 1500V in measurement.
Compliance Information
RoHS and REACH compliance per Infineon product page. Halogen-free per JEDEC JS709B. AEC-Q100 not applicable (discrete power semiconductor, not an automotive IC). Lead-free matte-tin finish. Conflict-minerals compliance per Infineon CMRT filings.
