IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon
MPN: IPW60R037P7XKSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $5.4 | $5.40 |
| 10 | $4.95 | $49.50 |
| 100 | $4.42 | $442.00 |
| 500 | $3.95 | $1,975.00 |
| 1,000 | $3.55 | $3,550.00 |
IPW60R037P7XKSA1 Overview
What is a CoolMOS superjunction MOSFET? A superjunction (SJ) MOSFET is a high-voltage power MOSFET architecture that uses alternating P- and N-doped epitaxial layers to break the traditional silicon limit between on-resistance (RDS(on)) and breakdown voltage (BV_DSS). Compared with conventional planar MOSFETs, SJ devices achieve roughly 5x lower RDS(on) per unit area at the same voltage rating, which directly translates to lower conduction losses, cooler operation, and smaller heatsinks in SMPS, PFC, and inverter designs. As a member of the broader MOSFET -> power semiconductor -> discrete semiconductor taxonomy, CoolMOS P7 specifically targets 500 V–950 V applications where efficiency and ruggedness are critical.
Key features include an integrated ultra-fast body diode optimized for hard-switching topologies, a gate threshold of 3.5 V (typ), and a low gate charge (Qg) that minimizes driver losses at high switching frequencies. The device is qualified for industrial-grade operating junction temperatures from -55 °C to +150 °C and is rated for avalanche operation, giving designers additional margin during transient load events. Compared with the prior P6 generation, the P7 platform further reduces output charge (Qoss) and effective output capacitance (Coss(eff)), improving light-load efficiency in resonant and soft-switching converters.
Typical applications for the IPW60R037P7XKSA1 include totem-pole PFC, half-bridge and full-bridge LLC converters, solar inverters, telecom rectifier modules, and industrial motor drives. The low Qrr of the integrated body diode also makes it suitable for hard-switched bridge topologies where reverse-recovery losses can dominate. The TO-247-3 package provides a robust mechanical mounting for high-current applications and supports conventional through-hole assembly.
When designing with this part, use a low-inductance gate-drive loop and place a 10–100 nF ceramic decoupling capacitor as close to the gate-source terminals as possible. The P7 family is engineered for low ringing at the drain node, but careful PCB layout of the power-loop inductance remains essential to extract the full efficiency benefit. Always operate within the SOA shown in the manufacturer datasheet and derate at high switching frequencies to keep junction temperature within the 150 °C limit.
Drop-in alternatives for IPW60R037P7XKSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPW60R037P7XKSA1 (same form factor and footprint) — differing in Mounting Type, Package, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPW60R040P7
✅ Drop-In📋 Reference alternative (not in catalog)
IPW60R045P7
✅ Drop-In📋 Reference alternative (not in catalog)
IPW60R037P7XKSA2
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPP60R037P7
✅ Drop-In📋 Reference alternative (not in catalog)
NTHL040N60S5H
✅ Drop-In📋 Reference alternative (not in catalog)
STF28N60M2
✅ Drop-In📋 Reference alternative (not in catalog)
IPW60R037P7XKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| Transistor Type | N-Channel MOSFET (Superjunction) |
| Drain-Source Voltage (V_DSS) | 600 V |
| Continuous Drain Current (I_D, Tc=25 °C) | 76 A |
| On-Resistance (R_DS(on), max, V_GS=10 V) | 37 mΩ |
| Power Dissipation (P_D, Tc=25 °C) | 255 W |
| Gate Threshold Voltage (V_GS(th), typ) | 3.5 V |
| Package | PG-TO247-3 (TO-247-3, through-hole) |
| Mounting Type | Through Hole |
| Operating Junction Temperature | -55 °C to +150 °C |
| Technology | CoolMOS Superjunction (SJ) |
| Orderable Part Number Suffix | XKSA1 (tube packaging, industrial) |
| RoHS Status | Compliant |
| Avalanche Rated | Yes |
IPW60R037P7XKSA1 Pin Configuration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Drain — Power drain terminal (also connected to tab/lead 3 in TO-247-3 plastic tab variants; verify against datasheet outline) |
| Pin 3 | Source — Source terminal (also bonded to metal tab) |
Safe Operating Area (DC)
Typical Applications
IPW60R037P7XKSA1 is suitable for 6 applications: Totem-Pole Bridgeless PFC, LLC Resonant Converter Half-Bridge, Solar String Inverter DC-DC Stage, Industrial Motor Drive Inverter, Telecom Rectifier / Server PSU, EV Onboard Charger PFC Stage.
Totem-Pole Bridgeless PFC
The IPW60R037P7XKSA1 is an excellent choice for CCM totem-pole bridgeless PFC stages in 3–5 kW SMPS designs, including server PSU and telecom rectifier front-ends. Its CoolMOS P7 superjunction architecture delivers 37 mΩ RDS(on) at 600 V, which keeps conduction loss below 4 W at 30 A line-frequency peak current, while the integrated fast body diode with sub-µC Qrr eliminates the slow-recovery diode pair of a traditional bridgeline. The 600 V drain rating provides ample margin for 385 V PFC output with 70 V transient headroom, and the 76 A continuous rating handles repetitive peak currents in inductor ripple envelopes. Designers can switch at 65–100 kHz and still achieve 99% efficiency at full load.
Recommended
LLC Resonant Converter Half-Bridge
In LLC resonant converter half-bridge primary stages, the IPW60R037P7XKSA1 takes full advantage of the P7 family's low Qoss and Coss(eff), enabling ZVS turn-on across a wide load range from 20% to 100%. The 37 mΩ RDS(on) keeps circulating current loss manageable in the resonant tank, and the 600 V rating covers universal-input rectified 400 V bus designs. With 76 A continuous drain current the part comfortably drives 1.5–2.5 kW LLC converters used in e-mobility onboard chargers, industrial battery chargers, and TV white-goods power supplies. The TO-247-3 package also supports through-hole wave soldering on conventional FR-4, simplifying assembly versus SMD alternatives.
Recommended
Solar String Inverter DC-DC Stage
The IPW60R037P7XKSA1 fits solar string inverter boost and HERIC/H5 inverter stages where 600 V breakdown, low RDS(on), and high-efficiency switching are required. At 37 mΩ RDS(on) and 76 A continuous current, it handles 4–6 kW single-string designs with PV input up to 600 V open-circuit (European 1000 V system max after boost). The CoolMOS P7 integrated fast body diode simplifies inverter leg layout and supports bidirectional power flow needed for module-level optimizer interfaces. The industrial-grade junction temperature range (-55 °C to +150 °C) and avalanche rating also meet IEC 62109 solar inverter reliability requirements.
Recommended
Industrial Motor Drive Inverter
For industrial three-phase motor drives and variable-frequency drives (VFD) up to 7.5 kW, the IPW60R037P7XKSA1 serves as a robust half-bridge switch on the 600 V DC bus. Its 76 A continuous rating covers 10–15 A phase current at 400 V AC output with comfortable thermal margin, and the 255 W power dissipation rating supports continuous operation at elevated switching frequencies (16–32 kHz) for low acoustic noise. The CoolMOS P7 low ringing tendency simplifies gate-drive layout, reducing EMI filter cost, while the avalanche rating provides protection during load-side short-circuit transients. The TO-247-3 package supports conventional bolted heatsink assembly common in motor-drive designs.
Recommended
Telecom Rectifier / Server PSU
In 48 V telecom rectifier modules and CRPS server PSUs ranging from 1.5 kW to 3 kW, the IPW60R037P7XKSA1 is a primary-side switch candidate for both PFC and DC-DC stages. The 600 V rating handles universal AC input (90–264 VAC) after rectification, while 37 mΩ RDS(on) keeps full-load efficiency above 96% in the PFC stage and 97% in the LLC primary. The P7 family's low Qrr also makes the part viable for hard-switched phase-shifted full-bridge topologies used in high-power telecom rectifiers. Industrial temperature grade ensures 24/7 continuous operation at elevated ambient temperatures in data-center environments.
Recommended
EV Onboard Charger PFC Stage
For 3.3 kW to 11 kW electric vehicle onboard charger (OBC) PFC stages, the IPW60R037P7XKSA1 provides the high-voltage blocking and switching speed required for compact, high-density designs. Its 600 V drain rating covers rectified 240 VAC industrial input or 400 VDC fast-charge buses, and 37 mΩ RDS(on) keeps PFC conduction loss below 5 W at 16 A peak. The integrated fast body diode enables bridgeless totem-pole or Vienna rectifier topologies commonly used in modern OBCs. Combined with AEC-Q100-grade companion gate drivers, designers can target automotive-grade designs (note: this part is industrial-grade; for AEC-Q100 EV applications use the IAUC60N04S6L030HATMA1 automotive part instead).
Recommended
Recommended Products Summary
Engineering reference data for IPW60R037P7XKSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPW60R040P7 | IPW60R045P7 | IPP60R037P7 | NTHL040N60S5H | STF28N60M2 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | STMicroelectronics |
| Package | TO-247-3 | TO-247-3 - same | TO-247-3 - same | TO-220 - differs (verify pinout) | TO-247-3 - same | TO-247-3 - same |
| Drain-Source Voltage (V_DSS) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (Tc=25 °C) | 76 A | 72 A | 66 A | 76 A | 70 A | 28 A |
| On-Resistance R_DS(on) max at 25 °C | 37 mΩ | 40 mΩ | 45 mΩ | 37 mΩ | 40 mΩ | 125 mΩ |
| Power Dissipation (Tc=25 °C) | 255 W | 240 W | 227 W | 176 W | 227 W | 190 W |
| Technology / Family | CoolMOS P7 (Superjunction) | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 | SUPERFET V | MDmesh M2 |
| Integrated Body Diode | Fast body diode (P7 optimized) | Fast body diode (P7) | Fast body diode (P7) | Fast body diode (P7) | Standard body diode | Standard body diode |
| Unit Price (qty-1, USD) | $5.40 | $5.10 | $4.80 | $4.60 | $5.25 | $4.10 |
Key Differentiators
- Lowest on-resistance in Infineon 600 V CoolMOS P7 TO-247-3 family (vs IPW60R045P7)
- Integrated fast body diode eliminates need for anti-parallel diode (vs NTHL040N60S5H (onsemi SUPERFET V))
- Higher continuous drain current than TO-220 alternative (vs IPP60R037P7)
- 75% lower on-resistance than competing MDmesh M2 part (vs STF28N60M2)
Design Notes
Estimated: minimize the power-loop inductance between the MOSFET drain, the half-bridge partner, and the DC-link bulk capacitor. Keep the loop area below 1 cm² using a low-inductance bus-bar or tightly coupled top/bottom-side layout. Place a 100 nF X7R snubber capacitor across drain-source within 5 mm of the package to suppress VDS overshoot. The P7 family is engineered for low ringing, but layout discipline still determines the achievable VDS spike margin.
At 30 A continuous drain current with 37 mΩ RDS(on) and TO-247-3 thermal resistance θJC ~0.5 K/W, conduction loss alone reaches ~33 W, requiring a heatsink with θSA < 0.7 K/W at 70 °C ambient to keep Tj below 125 °C. Use thermal interface material rated for 1–3 W/m-K, and torque the TO-247 mounting screw to 0.6–0.8 N·m. Always derate switching frequency above 100 kHz because switching loss adds significantly to the thermal budget.
Do not parallel IPW60R037P7XKSA1 devices without matched gate-source resistors (typically 10–47 Ω per device); the P7 family has positive temperature coefficient on RDS(on) so parallel operation is thermally stable, but individual device mismatch can cause current imbalance during turn-on. Also avoid exceeding the 600 V VDS rating with low-amplitude ringing spikes - add a TVS or RC snubber if measured VDS overshoot exceeds 540 V in worst-case line transient testing.
Estimated: gate-drive loop inductance is critical at switching frequencies above 50 kHz. Route the gate-return trace directly above or beside the gate trace to minimize loop area, and use a dedicated gate-drive pull-up/down supply bypassed with 100 nF + 10 µF. For TO-247-3 the Source pin is bonded to the metal tab; place the gate-return via adjacent to the Source lead. Excessive gate-loop inductance will cause VGS overshoot and EMI, and may trigger the parasitic turn-on of the complementary half-bridge switch.
The IPW60R037P7XKSA1's CoolMOS P7 platform is engineered for low drain-source dv/dt ringing, but in high-frequency hard-switched topologies an input common-mode choke and Y-rated line-filter capacitors are still required to meet conducted EMI limits (EN 55011/55032 Class B). The TO-247-3 lead inductance (~5 nH) acts as a small parasitic inductor that contributes to radiated EMI at the switching frequency; consider keeping the heatsink connection short and using shielded or twisted pairs where feasible.
Compliance Information
Industrial-grade part per Infineon IPW60R037P7 family datasheet. XKSA1 ordering code confirms RoHS-compliant tube packaging. Not AEC-Q100 qualified; for automotive EV onboard charger or traction inverter applications use IAUC60N04S6L030HATMA1 or IAUC120N06S5L015ATMA1 from Infineon's automotive OptiMOS family instead.
