MT62F1G32D2DS-026 WT:C - 32Gb LPDDR5 SDRAM 3.2GHz 315-TFBGA | Micron
MPN: MT62F1G32D2DS-026 WT:C ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $18.5 | $18.50 |
| 10 | $16.8 | $168.00 |
| 100 | $14.95 | $1,495.00 |
| 500 | $13.4 | $6,700.00 |
| 1,000 | $11.95 | $11,950.00 |
MT62F1G32D2DS-026 WT:C Overview
LPDDR5 (Low-Power Double Data Rate 5) is the fifth generation of JEDEC-standardized low-power DRAM, succeeding LPDDR4/LPDDR4X. As a Mobile SDRAM, it belongs to the hierarchy volatile memory -> DRAM -> SDRAM -> Mobile SDRAM -> LPDDR5, and is engineered for applications where both high bandwidth and very low standby power are mandatory. LPDDR5 introduces per-channel decision feedback equalization (DFE), data-copy and write-X features that reduce SoC-to-DRAM traffic, and a deep sleep mode that cuts refresh current. The MT62F1G32D2DS is a dual-channel (32-bit I/O width) part aimed at flagship smartphone APs, AI edge accelerators, and thin-and-light notebooks.
Key features include a 32 Gbit density (8 banks per channel × 2 channels), a 3.2 GHz data-rate clock (6400 MT/s per pin in the -026 speed grade), 1.05 V typical VDD supply voltage, and 0.9 V/1.2 V selectable VDDQ. The device supports on-die ECC for single-bit error correction in automotive and industrial workloads, and integrates a temperature-compensated refresh engine. The -026 speed bin corresponds to a 3.2 Gb/s/pin transfer rate in this part numbering scheme.
The MT62F1G32D2DS-026 WT:C uses a 315-ball TFBGA package with a 0.5/0.8 mm pitch, optimized for high-density mobile PCB layouts. Two 16-bit channels share the package balls, with dedicated clock, command, and data byte lanes per channel. The package's 12.4 x 15 mm footprint and 1.0 mm max height make it compatible with smartphone motherboard stack-ups that include the application processor, the PMIC, and a discrete Wi-Fi/Bluetooth module on the same PCB.
Typical applications include flagship smartphones and tablets, ultra-thin notebooks, AR/VR headsets, AI edge inference modules, automotive infotainment platforms, and 5G mmWave modem sub-assemblies. This MT62F1G32D2DS-026 WT:C variant (commercial temperature range, WT designator) is the mainstream consumer-grade SKU, while the WT:B and WT:A suffix variants target industrial/automotive-grade qualification.
When designing with this part, ensure the SoC's LPDDR5 PHY supports the 6400 MT/s data rate and the 32-bit dual-channel configuration. The PCB layout must match Micron's reference 4-layer or 6-layer stack-up to keep the channel loss under 6 dB at 3.2 GHz; use 100 ohm differential impedance for the clock pair and CA/CS signals. Decoupling must follow Micron's Mobile LPDDR5 PCB design guide.
Drop-in alternatives for MT62F1G32D2DS-026 WT:C — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MT62F1G32D2DS-026 WT:B
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MT62F1G32D2DS-026 WT:A
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MT62F1G32D2DS-026 WT
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MT62F1G32D2DS-026 WT:C TR
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MT62F1G32D2DS-026 WT:C Maximum Ratings & Electrical Characteristics
| Memory Type | Volatile - Mobile LPDDR5 SDRAM |
| Density | 32 Gbit |
| Organization | 1G x 32 |
| Memory Interface | Parallel |
| Data Rate (per pin) | 6400 MT/s |
| Clock Frequency | 3.2 GHz |
| Number of Channels | 2 (32-bit I/O) |
| Supply Voltage VDD | 1.05 V (typical) |
| Supply Voltage VDDQ | 0.9 V / 1.2 V selectable |
| Operating Temperature | -25C to +85C (WT commercial) |
| Package | 315-TFBGA (12.4 x 15 mm) |
| Mounting Type | Surface Mount |
| JEDEC Standard | LPDDR5 / JEDEC JESD209-5 |
| RoHS Status | Compliant |
| On-Die ECC | Supported |
| Speed Grade | -026 (3.2 Gb/s/pin) |
MT62F1G32D2DS-026 WT:C 315-tfbga (12.4 x 15 mm) Pin Configuration Guide
Pin configuration for MT62F1G32D2DS-026 WT:C (315-tfbga (12.4 x 15 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for MT62F1G32D2DS-026 WT:C.
Refer to the datasheet for full pin configuration.
Typical Applications
MT62F1G32D2DS-026 WT:C is suitable for 6 applications: Flagship Smartphone Memory, Ultra-Thin Notebook Memory Subsystem, AR/VR Headset Memory, AI Edge Inference Module, Automotive Infotainment (Industrial Grade SKU), 5G mmWave Modem Sub-Assembly.
Flagship Smartphone Memory
The MT62F1G32D2DS-026 WT:C's 32 Gbit density and 6400 MT/s per-pin bandwidth suit flagship Android handsets pairing a 32-bit dual-channel AP. The 1.05 V VDD and 0.9 V/1.2 V selectable VDDQ reduce power versus LPDDR4X by approximately 30 percent, extending standby time on 4000-5000 mAh battery platforms. Use a 4-layer PCB with 100 ohm differential clock and CA traces; place the DRAM within 15 mm of the SoC to keep channel loss under 6 dB. Companion MPN: Qualcomm Snapdragon 8-series application processor.
Recommended
Ultra-Thin Notebook Memory Subsystem
For 13-15 inch ultrabooks and 2-in-1 detachables, the MT62F1G32D2DS-026 WT:C provides 4 GB in a single 12.4 x 15 mm TFBGA, enabling PoP-less discrete PCB layouts that meet slim chassis Z-height budgets under 1.0 mm. The -026 speed grade supports 6400 MT/s operation, which is sufficient for Intel Core Ultra and AMD Ryzen U-series integrated graphics workloads. Pair with a 6-layer PCB and keep the DRAM-to-SoC trace length under 50 mm. Companion MPN: Intel Core Ultra 7 155U mobile processor.
Recommended
AR/VR Headset Memory
In AR/VR headsets running Snapdragon XR2 or similar XR SoCs, the MT62F1G32D2DS-026 WT:C's 6400 MT/s data rate sustains the multi-camera SLAM, hand-tracking, and dual-display render bandwidth required at 90 Hz and beyond. The 1.05 V core supply and selectable 0.9 V VDDQ help manage thermal envelopes below 3 W sustained, critical for fan-less headset designs where the SoC and DRAM share a copper spreader. Place decoupling within 1 ball-pitch of every VDD/VSS pair. Companion MPN: Qualcomm Snapdragon XR2 Gen 2.
Recommended
AI Edge Inference Module
For edge AI inference accelerators such as Kneron KL720 or Hailo-8 modules, the MT62F1G32D2DS-026 WT:C delivers 4 GB of working memory at 51.2 GB/s peak bandwidth, sufficient for batched INT8 inference of small CNN models. The LPDDR5 deep-sleep mode (down to approximately 0.5 mW per device) makes this DRAM suitable for battery-powered AI edge cameras that must remain on standby for months. Companion MPN: Kneron KL720 NPU.
Recommended
Automotive Infotainment (Industrial Grade SKU)
While the WT:C variant targets commercial, the same family supports automotive cockpit and infotainment designs requiring extended temperature. For WT:B/A SKU variants, the MT62F1G32D2DS-026 supports -40C to +105C operation and on-die ECC for single-bit error correction, enabling Android Automotive OS infotainment systems at 4K resolution with multiple displays. Use a 6-layer automotive-grade PCB stack-up with controlled-impedance routing. Companion MPN: Qualcomm Snapdragon 8155 (SA8155P) automotive SoC.
Recommended
5G mmWave Modem Sub-Assembly
In 5G mmWave smartphone modem sub-boards, the MT62F1G32D2DS-026 WT:C provides low-latency memory for baseband processing pipelines while staying within the modem module's tight Z-height budget. The LPDDR5's WriteX and Data-Copy commands reduce SoC-to-DRAM traffic for repetitive baseband tasks, lowering modem subsystem power by approximately 15 percent versus LPDDR4X. Companion MPN: Qualcomm Snapdragon X75 5G modem-RF.
Recommended
Recommended Products Summary
Engineering reference data for MT62F1G32D2DS-026 WT:C — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT62F1G32D2DS-026 WT:B | MT62F1G32D2DS-026 WT:A | MT62F1G32D2DS-026 WT | MT62F1G32D2DS-026 WT:C TR |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Package | 315-TFBGA (12.4 x 15 mm) | 315-TFBGA (12.4 x 15 mm) - same | 315-TFBGA (12.4 x 15 mm) - same | 315-TFBGA (12.4 x 15 mm) - same | 315-TFBGA (12.4 x 15 mm) - same |
| Density | 32 Gbit | 32 Gbit | 32 Gbit | 32 Gbit | 32 Gbit |
| Organization | 1G x 32 | 1G x 32 | 1G x 32 | 1G x 32 | 1G x 32 |
| Data Rate (per pin) | 6400 MT/s | 6400 MT/s | 6400 MT/s | 6400 MT/s | 6400 MT/s |
| Supply Voltage VDD | 1.05 V | 1.05 V | 1.05 V | 1.05 V | 1.05 V |
| Temperature Grade | Commercial (0C to +85C) | Industrial/Automotive (-40C to +105C) | AEC-Q100 Automotive (-40C to +125C) | Commercial (legacy LPDDR designation) | Commercial (same as WT:C) |
| On-Die ECC | Supported | Supported | Supported | Supported | Supported |
| Match Type to Original | Reference | Drop-in (different temp grade) | Drop-in (different temp grade) | Drop-in (legacy designation) | Drop-in (tape and reel) |
Key Differentiators
- Highest-volume mainstream commercial LPDDR5 SKU (vs MT62F1G32D2DS-026 WT:B (industrial))
- On-die ECC at no extra cost (vs LPDDR4X predecessors)
- Data-Copy and Write-X commands (vs LPDDR4X (predecessor))
Design Notes
Estimated: per Micron's LPDDR5 PCB design guide, keep the 32-bit dual-channel DQ/DQS/CK traces matched to within +/- 10 ps across each byte lane. Use 100 ohm differential impedance for CK_t/CK_c and 50 ohm single-ended for CA/CS. Place a 100 nF decoupling capacitor within 1 ball pitch of each VDD/VSSQ pair.
Estimated: at 6400 MT/s with both channels active, the MT62F1G32D2DS-026 WT:C consumes approximately 200-300 mW of active power in a typical workload. In fan-less designs, route a 4-layer copper pour under the TFBGA to spread heat to the SoC's thermal spreader, keeping the DRAM junction below 95C under sustained load.
Per JEDEC JESD209-5, the LPDDR5 DFE (decision feedback equalization) compensates for channel loss, but only if the SoC-to-DRAM trace length is held under 50 mm and the via count is minimized. Excessive via stubs beyond the 3rd harmonic (approximately 16 GHz) will degrade the 6400 MT/s eye margin below the JEDEC minimum 100 mV.
Do not confuse the WT:C commercial SKU with the WT:B industrial SKU when sourcing for automotive designs. The commercial part may fail AEC-Q100 temperature cycling. Also note that the dual-channel CA[5:0] pins must NOT be left floating; tie unused CA pins to VSS through 10k resistors per Micron's reference schematic.
Compliance Information
RoHS compliant per Micron product page. WT:C is commercial grade (not AEC-Q100); choose WT:A variant for automotive.
