MT62F1G32D2DS-026 WT:C - 32Gb LPDDR5 SDRAM 3.2GHz 315-TFBGA | Micron
Артикул: MT62F1G32D2DS-026 WT:C ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $18.5 | $18,50 |
| 10 | $16.8 | $168,00 |
| 100 | $14.95 | $1.495,00 |
| 500 | $13.4 | $6.700,00 |
| 1.000 | $11.95 | $11.950,00 |
MT62F1G32D2DS-026 WT:C Обзор
LPDDR5 (Low-Power Double Data Rate 5) is the fifth generation of JEDEC-standardized low-power DRAM, succeeding LPDDR4/LPDDR4X. As a Mobile SDRAM, it belongs to the hierarchy volatile memory -> DRAM -> SDRAM -> Mobile SDRAM -> LPDDR5, and is engineered for applications where both high bandwidth and very low standby power are mandatory. LPDDR5 introduces per-channel decision feedback equalization (DFE), data-copy and write-X features that reduce SoC-to-DRAM traffic, and a deep sleep mode that cuts refresh current. The MT62F1G32D2DS is a dual-channel (32-bit I/O width) part aimed at flagship smartphone APs, AI edge accelerators, and thin-and-light notebooks.
Key features include a 32 Gbit density (8 banks per channel × 2 channels), a 3.2 GHz data-rate clock (6400 MT/s per pin in the -026 speed grade), 1.05 V typical VDD supply voltage, and 0.9 V/1.2 V selectable VDDQ. The device supports on-die ECC for single-bit error correction in automotive and industrial workloads, and integrates a temperature-compensated refresh engine. The -026 speed bin corresponds to a 3.2 Gb/s/pin transfer rate in this part numbering scheme.
The MT62F1G32D2DS-026 WT:C uses a 315-ball TFBGA package with a 0.5/0.8 mm pitch, optimized for high-density mobile PCB layouts. Two 16-bit channels share the package balls, with dedicated clock, command, and data byte lanes per channel. The package's 12.4 x 15 mm footprint and 1.0 mm max height make it compatible with smartphone motherboard stack-ups that include the application processor, the PMIC, and a discrete Wi-Fi/Bluetooth module on the same PCB.
Typical applications include flagship smartphones and tablets, ultra-thin notebooks, AR/VR headsets, AI edge inference modules, automotive infotainment platforms, and 5G mmWave modem sub-assemblies. This MT62F1G32D2DS-026 WT:C variant (commercial temperature range, WT designator) is the mainstream consumer-grade SKU, while the WT:B and WT:A suffix variants target industrial/automotive-grade qualification.
When designing with this part, ensure the SoC's LPDDR5 PHY supports the 6400 MT/s data rate and the 32-bit dual-channel configuration. The PCB layout must match Micron's reference 4-layer or 6-layer stack-up to keep the channel loss under 6 dB at 3.2 GHz; use 100 ohm differential impedance for the clock pair and CA/CS signals. Decoupling must follow Micron's Mobile LPDDR5 PCB design guide.
Аналоги без доработки для MT62F1G32D2DS-026 WT:C — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MT62F1G32D2DS-026 WT:B
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MT62F1G32D2DS-026 WT:A
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MT62F1G32D2DS-026 WT
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MT62F1G32D2DS-026 WT:C TR
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MT62F1G32D2DS-026 WT:C Максимальные параметры и электрические характеристики
| Тип памяти | Volatile - Mobile LPDDR5 SDRAM |
| Density | 32 Gbit |
| Организация памяти | 1G x 32 |
| Memory Interface | Parallel |
| Data Rate (per pin) | 6400 MT/s |
| Clock Frequency | 3.2 GHz |
| Number of Channels | 2 (32-bit I/O) |
| Supply Voltage VDD | 1.05 V (typical) |
| Supply Voltage VDDQ | 0.9 V / 1.2 V selectable |
| Рабочая температура | -25C to +85C (WT commercial) |
| Корпус | 315-TFBGA (12.4 x 15 mm) |
| Тип монтажа | Surface Mount |
| JEDEC Standard | LPDDR5 / JEDEC JESD209-5 |
| Статус RoHS | Compliant |
| On-Die ECC | Supported |
| Speed Grade | -026 (3.2 Gb/s/pin) |
Руководство по цоколевке MT62F1G32D2DS-026 WT:C в корпусе 315-tfbga (12.4 x 15 mm)
Цоколевка для MT62F1G32D2DS-026 WT:C (корпус 315-tfbga (12.4 x 15 mm)). Эта цифровая ИС включает выводы GPIO, интерфейсы связи (UART, SPI, I2C) и выводы питания. Обратитесь к техническому описанию производителя для альтернативных функций выводов и вариантов конфигурации. Необходимо для проектирования встраиваемых систем и трассировки печатных плат.
Нет подробных данных о распиновке для MT62F1G32D2DS-026 WT:C.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
MT62F1G32D2DS-026 WT:C подходит для 6 применениеs: Flagship Smartphone Memory, Ultra-Thin Notebook Memory Subsystem, AR/VR Headset Memory, AI Edge Inference Module, Automotive Infotainment (Industrial Grade SKU), 5G mmWave Modem Sub-Assembly.
Flagship Smartphone Memory
The MT62F1G32D2DS-026 WT:C's 32 Gbit density and 6400 MT/s per-pin bandwidth suit flagship Android handsets pairing a 32-bit dual-channel AP. The 1.05 V VDD and 0.9 V/1.2 V selectable VDDQ reduce power versus LPDDR4X by approximately 30 percent, extending standby time on 4000-5000 mAh battery platforms. Use a 4-layer PCB with 100 ohm differential clock and CA traces; place the DRAM within 15 mm of the SoC to keep channel loss under 6 dB. Companion MPN: Qualcomm Snapdragon 8-series application processor.
Рекомендуется
Ultra-Thin Notebook Memory Subsystem
For 13-15 inch ultrabooks and 2-in-1 detachables, the MT62F1G32D2DS-026 WT:C provides 4 GB in a single 12.4 x 15 mm TFBGA, enabling PoP-less discrete PCB layouts that meet slim chassis Z-height budgets under 1.0 mm. The -026 speed grade supports 6400 MT/s operation, which is sufficient for Intel Core Ultra and AMD Ryzen U-series integrated graphics workloads. Pair with a 6-layer PCB and keep the DRAM-to-SoC trace length under 50 mm. Companion MPN: Intel Core Ultra 7 155U mobile processor.
Рекомендуется
AR/VR Headset Memory
In AR/VR headsets running Snapdragon XR2 or similar XR SoCs, the MT62F1G32D2DS-026 WT:C's 6400 MT/s data rate sustains the multi-camera SLAM, hand-tracking, and dual-display render bandwidth required at 90 Hz and beyond. The 1.05 V core supply and selectable 0.9 V VDDQ help manage thermal envelopes below 3 W sustained, critical for fan-less headset designs where the SoC and DRAM share a copper spreader. Place decoupling within 1 ball-pitch of every VDD/VSS pair. Companion MPN: Qualcomm Snapdragon XR2 Gen 2.
Рекомендуется
AI Edge Inference Module
For edge AI inference accelerators such as Kneron KL720 or Hailo-8 modules, the MT62F1G32D2DS-026 WT:C delivers 4 GB of working memory at 51.2 GB/s peak bandwidth, sufficient for batched INT8 inference of small CNN models. The LPDDR5 deep-sleep mode (down to approximately 0.5 mW per device) makes this DRAM suitable for battery-powered AI edge cameras that must remain on standby for months. Companion MPN: Kneron KL720 NPU.
Рекомендуется
Automotive Infotainment (Industrial Grade SKU)
While the WT:C variant targets commercial, the same family supports automotive cockpit and infotainment designs requiring extended temperature. For WT:B/A SKU variants, the MT62F1G32D2DS-026 supports -40C to +105C operation and on-die ECC for single-bit error correction, enabling Android Automotive OS infotainment systems at 4K resolution with multiple displays. Use a 6-layer automotive-grade PCB stack-up with controlled-impedance routing. Companion MPN: Qualcomm Snapdragon 8155 (SA8155P) automotive SoC.
Рекомендуется
5G mmWave Modem Sub-Assembly
In 5G mmWave smartphone modem sub-boards, the MT62F1G32D2DS-026 WT:C provides low-latency memory for baseband processing pipelines while staying within the modem module's tight Z-height budget. The LPDDR5's WriteX and Data-Copy commands reduce SoC-to-DRAM traffic for repetitive baseband tasks, lowering modem subsystem power by approximately 15 percent versus LPDDR4X. Companion MPN: Qualcomm Snapdragon X75 5G modem-RF.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MT62F1G32D2DS-026 WT:C — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MT62F1G32D2DS-026 WT:B | MT62F1G32D2DS-026 WT:A | MT62F1G32D2DS-026 WT | MT62F1G32D2DS-026 WT:C TR |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Package | 315-TFBGA (12.4 x 15 mm) | 315-TFBGA (12.4 x 15 mm) - same | 315-TFBGA (12.4 x 15 mm) - same | 315-TFBGA (12.4 x 15 mm) - same | 315-TFBGA (12.4 x 15 mm) - same |
| Density | 32 Gbit | 32 Gbit | 32 Gbit | 32 Gbit | 32 Gbit |
| Organization | 1G x 32 | 1G x 32 | 1G x 32 | 1G x 32 | 1G x 32 |
| Data Rate (per pin) | 6400 MT/s | 6400 MT/s | 6400 MT/s | 6400 MT/s | 6400 MT/s |
| Supply Voltage VDD | 1.05 V | 1.05 V | 1.05 V | 1.05 V | 1.05 V |
| Temperature Grade | Commercial (0C to +85C) | Industrial/Automotive (-40C to +105C) | AEC-Q100 Automotive (-40C to +125C) | Commercial (legacy LPDDR designation) | Commercial (same as WT:C) |
| On-Die ECC | Supported | Supported | Supported | Supported | Supported |
| Match Type to Original | Reference | Drop-in (different temp grade) | Drop-in (different temp grade) | Drop-in (legacy designation) | Drop-in (tape and reel) |
Ключевые отличия
- Highest-volume mainstream commercial LPDDR5 SKU (против MT62F1G32D2DS-026 WT:B (industrial))
- On-die ECC at no extra cost (против LPDDR4X predecessors)
- Data-Copy and Write-X commands (против LPDDR4X (predecessor))
Заметки по проектированию
Estimated: per Micron's LPDDR5 PCB design guide, keep the 32-bit dual-channel DQ/DQS/CK traces matched to within +/- 10 ps across each byte lane. Use 100 ohm differential impedance for CK_t/CK_c and 50 ohm single-ended for CA/CS. Place a 100 nF decoupling capacitor within 1 ball pitch of each VDD/VSSQ pair.
Estimated: at 6400 MT/s with both channels active, the MT62F1G32D2DS-026 WT:C consumes approximately 200-300 mW of active power in a typical workload. In fan-less designs, route a 4-layer copper pour under the TFBGA to spread heat to the SoC's thermal spreader, keeping the DRAM junction below 95C under sustained load.
Per JEDEC JESD209-5, the LPDDR5 DFE (decision feedback equalization) compensates for channel loss, but only if the SoC-to-DRAM trace length is held under 50 mm and the via count is minimized. Excessive via stubs beyond the 3rd harmonic (approximately 16 GHz) will degrade the 6400 MT/s eye margin below the JEDEC minimum 100 mV.
Do not confuse the WT:C commercial SKU with the WT:B industrial SKU when sourcing for automotive designs. The commercial part may fail AEC-Q100 temperature cycling. Also note that the dual-channel CA[5:0] pins must NOT be left floating; tie unused CA pins to VSS through 10k resistors per Micron's reference schematic.
Информация о соответствии
RoHS compliant per Micron product page. WT:C is commercial grade (not AEC-Q100); choose WT:A variant for automotive.
