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BSS138LT1G - 50V 200mA N-Channel MOSFET SOT-23 | onsemi
The onsemi BSS138LT1G is a single N-channel logic-level power MOSFET rated for 50 V drain-source voltage and 200 mA continuous drain current, with a maximum on-resistance of 3.5 ohm and a 225 mW power dissipation at Ta, housed in a 3-pin SOT-23-3 (TO-236) surface-mount package. A small-signal power MOSFET is a voltage-controlled semiconductor switch used to turn low-current loads on and off or to shift logic levels between voltage domains. Within the semiconductor hierarchy it belongs to the metal-oxide-semiconductor FET (MOSFET) family, a subset of field-effect transistors (FETs), which in turn are a class of discrete power semiconductors used across virtually every electronic system. The BSS138LT1G is defined by its low gate threshold voltage, which permits direct drive from 3 V and 5 V logic (MCU GPIO, FPGA I/O) without a dedicated gate driver. Its 50 V rating provides generous margin over 12 V, 24 V and 48 V rails for low-current switching, while the 3.5 ohm RDS(on) keeps conduction losses acceptable at the rated 200 mA. The SOT-23-3 footprint is one of the smallest industry-standard packages, enabling very dense layouts. Internally the device is an enhancement-mode N-channel MOSFET built on onsemi's small-signal MOSFET process, with a body diode from source to drain for inductive-load freewheeling. Because gate charge is minimal, switching losses stay low even at moderate PWM frequencies, making it a common choice for relay and LED drivers. Typical applications include logic-level load switches in portable and battery-powered products, bidirectional I2C level shifting between 3.3 V and 5 V domains, relay and solenoid drivers, and low-side switching in cordless phones, printers and computers. A key design consideration is thermal budget: at 225 mW maximum dissipation, keep VDS x ID well below the limit and use short, wide traces to the SOT-23 pads to conduct heat into the PCB. This page synthesizes distributor pricing, verified drop-in alternatives, pinout detail, and practical design notes not consolidated in the manufacturer datasheet.
BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi
The VBsemi BSS138LT1G-VB is a small-signal N-channel enhancement-mode power MOSFET rated for 50 V drain-source voltage and 200 mA continuous drain current, dissipating up to 225 mW at Ta, housed in a 3-pin SOT-23-3 (TO-236) surface-mount package. It is a pin-compatible equivalent of the widely used onsemi BSS138LT1G logic-level MOSFET. A small-signal MOSFET is a discrete semiconductor switching transistor in the broader hierarchy: MOSFET -> field-effect transistor -> transistor -> discrete semiconductor. Unlike bipolar junction transistors, MOSFETs are voltage-controlled devices with essentially zero DC gate current, making them ideal for interfacing microcontroller GPIO outputs to loads. The BSS138 family is specifically a logic-level type, meaning its gate threshold is low enough for direct drive from 3.3 V and 5 V logic outputs. Key features include a low gate threshold voltage suited to logic-level drive, a compact SOT-23 footprint that minimizes board area, surface-mount construction for automated assembly, and RoHS-compliant lead-free construction. The device switches low-current loads such as relay coils, LED strings, level-shifters, and power-management rails in portable products. Architecturally, the BSS138LT1G-VB uses a lateral DMOS cell structure optimized for low-voltage, low-current switching rather than high-power conduction. Its small die keeps input capacitance low, enabling fast switching with modest gate drive, while the 50 V drain rating provides margin on 12 V and 24 V rails. Typical applications include DC-DC converter auxiliary switches, load switches in battery-powered products, level-shifting between 5 V and 3.3 V logic domains, and low-side switching of relays and LEDs in cellular phones, printers, PCMCIA cards, and computers - the same application space targeted by the onsemi BSS138LT series. When designing, keep continuous drain current well below the 200 mA rating at elevated ambient temperature, and add a gate series resistor (typically 100 ohm to 1 kohm) to damp ringing when driven from fast logic outputs. This page synthesizes distributor pricing from LCSC, drop-in alternatives, pinout, and practical design notes not consolidated in the manufacturer datasheet.
BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon
The Infineon BSS138NH6327XTSA2 is an N-channel enhancement-mode SIPMOS small-signal MOSFET rated at 60 V V(BR)DSS, 230 mA continuous drain current (Ta), and 3.5 ohm maximum R_DS(on) at V_GS = 10 V, housed in a 3-pin PG-SOT-23 surface-mount package and supplied on tape-and-reel. Its logic-level V_GS(th) of approximately 1.4 V allows direct drive from 3.3 V or 5 V microcontrollers without a gate-driver stage, making it a standard building block for low-power switching. The device is qualified to AEC-Q101, halogen-free per IEC 61249-2-21, Pb-free with RoHS-compliant lead plating, and carries an automotive-grade reliability profile. A small-signal N-channel MOSFET such as the BSS138N is a voltage-controlled majority-carrier device used to switch or amplify low-level signals; the enhancement-mode variant is normally off at zero gate bias and turns on when V_GS exceeds the threshold voltage. Within the broader taxonomy it belongs to the discrete MOSFET family, then to field-effect transistors, then to discrete semiconductors. SIPMOS denotes Infineon's proprietary SIP (system-in-package) lateral MOSFET process, optimized for low gate charge and fast switching at low currents. Key features include 60 V drain-source breakdown, 3.5 ohm max R_DS(on), 230 mA continuous drain current at 25 C ambient, 360 mW power dissipation at Ta, logic-level gate drive, dv/dt ruggedness, and AEC-Q101 automotive qualification. The PG-SOT-23 footprint provides industry-standard land patterns accepted across consumer, industrial, and automotive boards, simplifying second-sourcing. Technically the BSS138N uses a planar SIPMOS die with low Q_G and Q_GD, which keeps switching losses small and enables efficient PWM operation in the kHz range. Body-diode reverse recovery is intentionally soft for this class, suitable for low-current synchronous-rectifier or freewheel duty in sub-1 A converters. The gate oxide is rated for ±20 V V_GS, providing margin against transient over-drive. Typical applications include level shifters and signal translation between 3.3 V microcontrollers and 12 V loads, low-side switching for relays, solenoids, and LEDs, flyback or boost aux converters in sub-watt power supplies, and generic analog switches. It is also widely used as a digital signal multiplexer building block and load driver in IoT nodes. When designing with this part, observe the 360 mW Ta dissipation budget - at 230 mA in SOT-23 the device derates quickly above 25 C, so compute junction temperature rise carefully. Place the gate pull-down resistor directly at the gate pin to prevent unintended turn-on from leakage on floating MCU outputs. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSS169H6327XTSA1 - 100V N-Ch Depletion MOSFET 170mA | Infineon
The Infineon BSS169H6327XTSA1 is an N-channel depletion-mode power MOSFET rated at 100 V VDS, 170 mA continuous drain current (Ta), and 360 mW power dissipation, housed in a 3-pin PG-SOT23 surface-mount package. Built on Infineon's proprietary depletion-mode process, it is one of the few small-signal depletion MOSFETs still in volume production and offers an on-resistance of up to 6 Ohm at VGS=0 V. A depletion-mode MOSFET (also called a depletion-mode or normally-on FET) is a field-effect transistor that conducts at zero gate-source bias. Unlike standard enhancement-mode MOSFETs (such as the ubiquitous 2N7002 or BSS138), which require a positive VGS to turn on, depletion-mode devices are on by default and require a negative gate bias to switch off. This normally-on behavior places depletion-mode MOSFETs in the broader family of field-effect transistors within power semiconductors, sitting alongside JFETs, standard MOSFETs, and IGBTs in the device taxonomy. The hypernym chain runs depletion-mode MOSFET -> field-effect transistor -> transistor -> discrete semiconductor. Key features of the BSS169 include the always-on characteristic that simplifies startup circuitry, a pinch-off voltage around -3.5 V that allows digital logic drive from a single supply, low leakage at full pinch-off, and a small SOT-23 footprint that fits in any 0402-class board space. The device's 100 V drain rating provides generous headroom for 24 V industrial rails and telecom supply protection circuits. Its depletion-mode nature makes it particularly valuable in power-supply startup, in-rush-current limiting, over-voltage protection, and off-line voltage reference circuits where a normally-on pass element is preferred. Technically, the BSS169 uses a vertical DMOS structure that gives it a low RDS(on) when fully on and a sharp pinch-off curve for clean switching. Designers exploit the always-on channel to pre-bias downstream stages or build constant-current sources using the saturation characteristic. Compared to enhancement-mode alternatives, the BSS169 simplifies gate-drive networks but requires careful handling because it cannot be turned off by simply pulling the gate to ground. Typical applications include power-supply startup assistance (where it acts as a soft-start bypass), in-rush current limiters at the input of hot-plug DC rails, over-voltage protection crowbars, off-line voltage references for SMPS controllers, normally-on level shifters, and constant-current source circuits. The wide VDS range also suits it to 48 V telecom and PoE protection. When designing with the BSS169, plan the gate-bias network first because the device is on at VGS=0. A typical circuit uses a resistor divider or zener clamp to set a defined pinch-off state during normal operation. Confirm that downstream circuits tolerate the always-on condition during power-up, and ensure the gate-source zener clamp does not exceed the +/-20 V VGS absolute maximum. This page synthesizes distributor pricing from DigiKey and Mouser, drop-in alternatives verified against the SOT-23 footprint, and practical depletion-mode design notes that go beyond the manufacturer's datasheet.
BSS192PH6327FTSA1 - P-Ch 250V 190mA MOSFET SOT-89 | Infineon
The Infineon BSS192PH6327FTSA1 is a P-channel enhancement-mode small-signal MOSFET rated at 250 V VDS, 190 mA continuous drain current (Ta), and 1 W power dissipation (Ta), housed in a 4-pin (3+Tab) PG-SOT89 surface-mount package. As a member of Infineon's SIPMOS small-signal family, it provides a logic-level-friendly enhancement P-channel switch with high blocking voltage in a compact outline, suitable for industrial and automotive AEC-Q101 environments where board space is constrained but voltage headroom is required. A P-channel MOSFET (P-FET) is a metal-oxide-semiconductor field-effect transistor in which the source-to-drain current is conducted by majority holes when a negative gate-to-source voltage is applied. P-channel devices sit in the hierarchy small-signal MOSFET -> MOSFET -> discrete semiconductor -> active component, and they are commonly chosen for high-side switching because they can be turned on by pulling the gate toward ground, simplifying gate drive in systems where only a positive rail is available. Key features of the BSS192PH6327FTSA1 include its 250 V drain-to-source breakdown, 190 mA continuous drain current at 25 C ambient, and the SOT-89 (PG-SOT89) outline whose center tab provides a low thermal resistance path to a PCB copper pad. The part is qualified to AEC-Q101, making it appropriate for automotive electronics, and is supplied on tape and reel for high-volume SMT assembly lines. Drive voltage is specified at 2.8 V (Max Rds On) and 10 V (Min Rds On). Architecturally, the device uses Infineon's SIPMOS planar cell technology, which optimizes the trade-off between on-resistance, switching speed, and ruggedness. With its 250 V rating and modest 190 mA current, the BSS192PH6327FTSA1 targets applications where the design needs a P-channel high-side switch or a level shifter that tolerates wide input rails - including offline bias circuits, relay driver front-ends, and small-signal analog switching blocks. Typical applications include high-side load switching in industrial controllers, automotive body and lighting modules, signal-source multiplexing in test equipment, level shifting between low-voltage microcontrollers and high-voltage rails, and reverse-polarity / over-voltage protection circuits. The combination of 250 V blocking and SOT-89 footprint also makes it useful as a discrete switch inside power-supply start-up or hold-up paths. Designers should note that for sustained DC conduction the SOT-89 center tab must be soldered to a sufficiently large copper area to keep junction temperature within safe limits. Because the device is P-channel and enhancement-mode, a pull-up resistor on the gate is typically required to keep it off when the driver is in a high-impedance state. This page consolidates distributor pricing, parametric comparison data, and application notes to give engineers a single reference point beyond the manufacturer datasheet for design-in, sourcing, and second-source decisions.
BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon
The Infineon BSS205NH6327XTSA1 is a 20 V N-channel small-signal MOSFET rated for 2.5 A continuous drain current (Ta) and 500 mW power dissipation, supplied in a 3-pin PG-SOT23 (SC-59 / TO-236) surface-mount package. It is built on Infineon's OptiMOS™ small-signal MOSFET process and is AEC-Q101 qualified, making it suitable for both consumer and automotive applications. The part is supplied on Tape & Reel (H6327 suffix) with Pb-free lead plating and is fully RoHS compliant. A small-signal N-channel MOSFET is a voltage-controlled semiconductor switch in which a gate-source voltage modulates the conductance of an n-type channel between source and drain. Small-signal MOSFETs are typically used for low-current switching (<5 A), level shifting, load switching, and analog signal multiplexing. They sit within the broader hierarchy: small-signal MOSFET → discrete MOSFET → discrete semiconductor → power management component. The BSS205N family is specifically engineered for space-constrained switching tasks where R<sub>DS(on)</sub> per mm², fast switching, and automotive-grade reliability matter. Key electrical specifications include a drain-source breakdown voltage V<sub>(BR)DSS</sub> of 20 V, maximum continuous drain current of 2.5 A at 25 °C ambient, R<sub>DS(on)</sub> maximum of 85 mΩ at V<sub>GS</sub> = 4.5 V (per the Infineon product page for the BSS205N family), and a typical gate threshold V<sub>GS(th)</sub> in the 1 V region. The PG-SOT23 footprint is one of the industry's most widely adopted 3-pin SMD packages, simplifying PCB layout and second-source sourcing. The BSS205N uses trench-based PowerMOS technology that delivers low on-resistance in a small outline, trading off higher R<sub>DS(on)</sub> than larger packages for an exceptionally small footprint. With a maximum power dissipation of 500 mW, the part is intended for pulse-load and low-duty-cycle switching applications rather than continuous high-current conduction. Typical applications include load switching in portable and battery-powered devices, power-rail multiplexing, USB power switching, LED backlight drivers, and signal-level shifting between logic domains. Its AEC-Q101 qualification also extends use into automotive body electronics and infotainment subsystems. When designing with this part, derate drain current aggressively at elevated ambient temperatures and respect the 500 mW package dissipation limit. Use a gate resistor to control switching transients and protect against dv/dt-induced turn-on. This page synthesizes distributor pricing, drop-in equivalents, and design considerations not aggregated on the manufacturer datasheet alone.
BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon
The Infineon BSS214NH6327XTSA1 is a single N-channel small-signal MOSFET built on the OptiMOS 2 process, rated for 20 V VDS and 1.5 A continuous drain current in a 3-pin SOT-23 (PG-SOT23) surface-mount package. The device features a maximum on-resistance of 250 mOhm at VGS = 4.5 V, 500 mW power dissipation (Ta), and is qualified to AEC-Q101 for automotive applications. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch where a positive gate-source voltage creates an n-type conduction channel between drain and source. As a small-signal MOSFET in the broader discrete-semiconductor hierarchy, it sits under power MOSFETs, which themselves are a sub-category of discrete transistors. Low-threshold, logic-level variants like the BSS214N are designed to be driven directly from 3.3 V or 5 V microcontroller GPIO pins without a separate gate driver stage. The key features include a logic-level gate threshold (VGS(th) in the sub-2 V range), 250 mOhm maximum RDS(on) at 4.5 V VGS, low gate charge enabling fast switching transitions, and an integrated ESD protection diode on the gate. The 20 V VDS rating makes it suitable for low-voltage bus switching such as USB (5 V), 12 V battery systems, and point-of-load rails below 15 V. The OptiMOS 2 technology provides a favorable FOM (RDS(on) x Qg) for its class. Architecturally, the BSS214N uses Infineon's planar OptiMOS 2 cell design, which reduces gate charge and conduction loss relative to older TrenchMOS generations. The SOT-23 package's exposed lead frame allows modest thermal dissipation to copper pads, supporting up to 500 mW continuous dissipation on a standard 1 oz JEDEC EIA/JESD51 FR4 test board. Typical applications include load switching in USB ports, battery management systems, power-rail multiplexing, DC-DC converter synchronous-rectifier low-side switches, and motor-driver low-side stages in small fans or pumps. Automotive body electronics and industrial sensor interfaces also benefit from the AEC-Q101 qualification. When designing with this part, observe the SOA derating for pulsed currents above 1.5 A and ensure that the VGS drive voltage does not exceed the maximum rating. The SOT-23 footprint requires thermal copper-pad design to sustain continuous 500 mW; thermal vias under the drain pad are recommended. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon
The Infineon BSS214NWH6327XTSA1 is an N-Channel small-signal OptiMOS power MOSFET rated at 20 V VDS, 1.5 A continuous drain current, and 250 mOhm maximum Rds(on), housed in a 3-pin SOT-323 (PG-SOT323) surface-mount package and qualified to AEC-Q101. It belongs to Infineon's OptiMOS small-signal family, designed for space-constrained, high-efficiency switching applications where both conduction and switching losses must be minimized. A small-signal MOSFET is a discrete field-effect transistor that uses an insulated gate (in this case, metal-oxide) to control current flow between the drain and source terminals. The 'OptiMOS' family specifically refers to Infineon's optimized trench MOSFET technology that achieves very low on-state resistance per unit silicon area. Small-signal MOSFETs occupy the product-type hierarchy as follows: MOSFET -> discrete semiconductor -> transistor -> semiconductor device, and the BSS214NW is positioned as a 'small-signal / small-power' switching element suitable for sub-2 A loads. Key features include a logic-level gate drive (Vgs(th) compatible with 2.5 V/4.5 V rails typical of microcontrollers), 500 mW power dissipation at Ta=25C, low gate charge for fast switching, and an integrated ESD-protected gate. The trench cell structure provides industry-leading figure-of-merit (FOM = Rds(on) x Qg), minimizing both conduction and switching losses in PWM and load-switch topologies. Typical applications include DC-DC converter synchronous rectification, load switching in portable and battery-powered equipment, motor-driver low-side switches, LED backlight dimming, and USB/charger power-path management. The 20 V rating makes it compatible with 5 V and 12 V rails, while the SOT-323 footprint supports miniaturized designs in wearables and IoT end nodes. When designing with this device, derate power dissipation for ambient temperature using the thermal resistance specified in the datasheet. For switching applications, drive the gate with a sharp 10 V (or logic-level equivalent) edge to minimize transition losses and avoid partial-turn-on regions that cause shoot-through in synchronous-rectifier configurations.
BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon
The Infineon BSS306NH6327XTSA1 is an N-Channel 30 V 2.3 A small-signal OptiMOS power MOSFET housed in a 3-pin SOT-23 (PG-SOT23) surface-mount package. Optimized for low on-state resistance and fast switching, the device dissipates up to 500 mW at Ta=25°C and is qualified to AEC-Q101 for automotive applications, making it suitable for use alongside Infineon's BSS306N family of small-signal/small-power MOSFETs. A small-signal MOSFET is a low-power field-effect transistor designed for switching, level shifting, and load management in compact, high-density designs. Within the broader semiconductor taxonomy, the BSS306N sits in the discrete MOSFET category (MOSFET -> transistor -> discrete semiconductor -> semiconductor), enabling engineers to replace bipolar transistors or build efficient high-side/low-side switches where traditional BJTs would dissipate excessive heat. Key specifications include 30 V drain-source voltage (VDS), 2.3 A continuous drain current (ID) at Ta, an on-resistance of approximately 57 mΩ typical, and low gate charge for high-frequency operation. The 3-pin SOT-23 package (PG-SOT23) is one of the industry's most common small-outline footprints, allowing direct drop-in compatibility with hundreds of N-channel MOSFETs. Technically, the BSS306N leverages Infineon's OptiMOS technology, providing an optimized silicon trench cell structure that minimizes conduction and switching losses. The standard 2.5 V gate-threshold range allows direct logic-level drive from microcontrollers and ASICs without additional level-shifting circuitry. Typical applications include load switching in portable electronics, power management in battery-powered systems, signal routing in industrial automation, automotive ECUs (body and chassis modules), and general-purpose DC-DC conversion stages. When designing with this part, ensure the gate-source voltage stays within the recommended maximum and provide adequate PCB thermal relief, as 500 mW (Ta) is the absolute limit at 25°C. For high-current or high-ambient designs, derate power dissipation using the thermal resistance curve from the manufacturer datasheet. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
The Infineon BSS308PEH6327XTSA1 is a P-channel enhancement-mode small-signal MOSFET rated for -30 V VDS and -2 A continuous drain current in a 3-pin SOT-23 (PG-SOT23) surface-mount package, qualified to the automotive AEC-Q101 standard. It belongs to Infineon's OptiMOS P power-MOSFET family, which is engineered for very low on-state resistance, low gate charge, and high switching speed in a compact footprint. What is a small-signal P-channel MOSFET? A P-channel enhancement-mode MOSFET is a type of field-effect transistor (FET) that conducts when a negative voltage is applied to its gate relative to its source. The 'small-signal' classification refers to devices typically used for switching and amplification at currents under approximately 5 A, in contrast to high-power MOSFETs intended for kilowatt-scale converters. P-channel devices simplify high-side switching circuits by removing the need for a charge pump or bootstrap driver, since the gate can be driven relative to ground. Key features include a maximum drain-source on-resistance RDS(on) of 80 mΩ at VGS = -10 V, an operating temperature range of -55 °C to +150 °C, and a power dissipation rating of 500 mW on a standard FR4 board. The device is supplied on 3000-piece reels in Tape & Reel packaging and is fully RoHS compliant. The OptiMOS process technology provides an excellent figure of merit (FOM = RDS(on) × Qg), making this part particularly effective for low-loss load switching and small DC-DC converter sections. Typical applications include power-rail load switching in portable and battery-powered devices, USB On-The-Go (OTG) power muxing, reverse-polarity protection, level shifters, and general-purpose switching in automotive body electronics and infotainment subsystems. Designers frequently select this part where a P-channel high-side switch is preferred to simplify gate drive. When designing with this device, ensure that VGS never exceeds the +/-20 V absolute maximum and that adequate gate-source pulldown is provided to prevent inadvertent turn-on during transients. A small gate-source resistor (typically 10 kΩ) is recommended to discharge the gate capacitance and harden the part against dv/dt-induced turn-on.
BSS314PEH6327XTSA1 - -30V P-Ch 1.5A OptiMOS MOSFET | Infineon
The Infineon BSS314PEH6327XTSA1 is a P-channel enhancement-mode small-signal power MOSFET built on Infineon's OptiMOS process, rated for -30V VDS and -1.5A continuous drain current in a 3-pin PG-SOT23 surface-mount package. It is part of the BSS314PE family qualified to automotive standards, delivering 500mW power dissipation at TA and a maximum on-state resistance in the order of 140 mOhm at -10V VGS. A P-channel MOSFET is a type of field-effect transistor (FET) in which the conducting channel is formed by p-type semiconductor material and the device is turned on by applying a negative gate-to-source voltage. P-channel MOSFETs sit in the broader discrete-semiconductor hierarchy: FET -> MOSFET -> power MOSFET -> small-signal/small-power MOSFET -> surface-mount discrete. P-channel parts are particularly useful as high-side load switches because they can be driven directly from a logic-level signal without the charge pump required by N-channel high-side switches, simplifying USB power switching, battery load management, and LED driver topologies. Key features of the BSS314PEH6327XTSA1 include a logic-level compatible -4.5V VGS drive, low Rds(on) for low conduction loss in the ON state, low gate charge for fast switching, and integrated ESD protection. The PG-SOT23-3 footprint uses industry-standard pinout (G-S-D) enabling drop-in replacement on most SOT-23 P-channel layouts. The automotive-grade qualification makes it suitable for AEC-Q101 demanding environments. The OptiMOS chip architecture uses a trench-gate structure to minimize Rds(on) per unit silicon area and to keep gate charge Qg low for high-frequency switching efficiency. Compared to older planar P-channel generations, the trench process delivers roughly 2-3x lower on-resistance in the same die area, allowing the SOT-23 footprint to handle 1.5A continuous drain current with proper PCB copper heat-sinking. Typical applications include USB VBUS load switching, battery protection and power path management in portable electronics, DC-DC converter high-side switches, LED backlight drivers in mobile and display modules, and reverse-polarity protection circuits. Its automotive qualification also opens it to body electronics modules and infotainment rails. When designing with this part, observe the SOA limits carefully because SOT-23 has limited thermal headroom. Provide adequate copper pad area on source pin to keep junction temperature below 150 C, derate ID for ambient temperature above 25 C, and use a gate pull-down resistor to hold the device OFF during MCU reset. Place a TVS or zener from gate to source if the gate trace can see transient over-voltage during hot-plug events. This page synthesizes distributor live pricing, Infineon same-family drop-in alternatives, cross-brand pin-compatible equivalents, and practical PCB thermal guidance that you will not find in the bare datasheet PDF.
BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon
The Infineon BSS316NH6327XTSA1 is an N-channel enhancement-mode small-signal power MOSFET built on Infineon's OptiMOS 2 30V platform, rated for 30V VDS and 1.4A continuous drain current in a 3-pin PG-SOT23 (SOT-23-3) surface-mount package. It delivers a maximum on-resistance of 160 mOhm at VGS=10V and ID=1.4A, with a typical threshold voltage of 2V at 3.7uA, and is qualified to AEC-Q101 for automotive use. The device is targeted at low-voltage switching applications that demand high efficiency, fast switching, and a tiny footprint. A small-signal N-channel MOSFET is a voltage-controlled majority-carrier device in which applying a positive gate-to-source voltage above the threshold creates an inversion-layer channel that conducts current between drain and source. The "small signal" designation implies sub-2A continuous drain current, optimized gate charge, and a SOT-23-style package intended for PCB-side switching rather than power-stage conduction. Within the broader taxonomy, the BSS316N sits between discrete transistors and dedicated power MOSFETs: discrete semiconductor -> MOSFET -> N-channel MOSFET -> small-signal/OptiMOS family -> OptiMOS 2 30V class. Key features of the BSS316NH6327XTSA1 include a 30V drain-source breakdown voltage, 160 mOhm maximum RDS(on) at VGS=10V, a total gate charge (Qg) of 600 pC at VGS=5V, an input capacitance (Ciss) of 94 pF at VDS=15V, and 500 mW maximum power dissipation at TA=25C. The 3-pin PG-SOT23 package has a low thermal resistance and supports reflow soldering to standard JEDEC J-STD-020 profiles. Pb-free lead plating makes the part RoHS compliant, and AEC-Q101 qualification extends use into automotive electronics. The OptiMOS 2 technology uses an advanced trench-cell process that minimizes cell pitch and reduces both on-resistance per unit area and gate charge. The result is a low FOM (RDS(on) x Qg) figure, which translates into lower conduction and switching losses. Combined with the 30V rating, this cell architecture is well-suited to 12V automotive and 5V/12V industrial rails. Typical applications include load switching in battery-powered portable devices, high-side/low-side switches in DC-DC converter modules, USB power path management, LED backlight driving, and automotive body-electronics modules such as ECU outputs and small motor drivers. The part is also widely used as a generic high-speed level shifter or signal relay in mixed-signal designs. When designing with the BSS316N, place the gate-drive resistor as close to the gate pin as possible to limit ringing, and ensure VGS is fully driven above the threshold for low RDS(on). For switching loads above 100 kHz, account for the 600 pC Qg when sizing the gate driver. This page synthesizes distributor pricing, verified drop-in alternatives, AEC-Q101 compliance, and practical PCB-layout notes not collected in any single Infineon datasheet section.
BSS606NH6327XTSA1 - 60V 3.2A N-Ch MOSFET, SOT-89 | Infineon
The Infineon BSS606NH6327XTSA1 is an N-channel small-signal power MOSFET rated at 60 V VDS and 3.2 A continuous drain current (Ta), housed in a surface-mount PG-SOT-89 package with 1 W power dissipation (Ta). Built on Infineon's OptiMOS technology platform, the device delivers a low on-resistance of approximately 60 mΩ at VGS=10 V, making it suitable for high-efficiency switching in space-constrained designs. An N-channel MOSFET (NMOS) is a voltage-controlled semiconductor switch where a positive gate-source voltage creates an inversion layer that conducts current between drain and source. The small-signal/small-power sub-category sits between discrete signal-level transistors (SOT-23 scale, hundreds of mA) and high-current power MOSFETs (TO-220/DFN, tens of amps). Within the broader taxonomy, the BSS606N belongs to the discrete semiconductor hierarchy: N-channel MOSFET -> enhancement-mode MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor. SOT-89 packaging, with its integrated heat slug, allows this NMOS to dissipate roughly twice the power of a comparably rated SOT-23 device while occupying only a small SMD footprint. Key specifications include 60 V drain-source breakdown voltage, 3.2 A continuous drain current at 25°C ambient, typical Rds(on) of 60 mΩ at VGS=10 V, low gate charge for fast switching, and a wide operating junction temperature range from -55°C to +150°C. The logic-level compatible gate drive simplifies microcontroller interfacing in 3.3 V and 5 V systems. The SOT-89 footprint provides enhanced thermal performance via the exposed tab, which must be soldered to a copper pad for proper heat dissipation. The device's architecture uses Infineon's planar OptiMOS cell design, optimized for low conduction loss and fast switching transients. The SOT-89 package integrates a metal heat-spreader tab on the underside that significantly reduces thermal resistance compared to smaller SOT packages, allowing continuous operation at higher currents within the same board area. The part is qualified to automotive standards per the manufacturer's product family page, making it suitable for both industrial and automotive subsystem designs. Typical applications include DC-DC converter power stages, motor driver H-bridges, load switching in battery management systems, LED backlight drivers, and relay/valve replacement circuits. The combination of 60 V rating and 3.2 A current capability suits 12 V and 24 V automotive bus systems, as well as point-of-load regulators in industrial 24 V supplies. When designing with this part, ensure the exposed thermal pad is soldered to a copper pour of at least 50 mm² to keep junction temperature within safe limits at full load. Gate drive traces should be kept short to minimize ringing from the device's input capacitance. This page synthesizes distributor pricing across 6+ sources, verified drop-in alternatives in the same SOT-89 footprint, and practical design notes not found in the manufacturer datasheet alone.
BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon
The Infineon BSS806NEH6327XTSA1 is an N-channel small-signal enhancement-mode MOSFET rated at 20V VDS and 2.3A continuous drain current (Ta), packaged in a 3-pin PG-SOT23 (SOT-23-3) surface-mount outline with 500mW (Ta) power dissipation. Qualified to AEC-Q101, this part is targeted at automotive and industrial switching applications where compact footprint and high reliability are required. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device whose conduction between drain and source is modulated by the gate-source voltage. Within the broader discrete-semiconductor hierarchy, this part belongs to small-signal MOSFETs -> MOSFETs -> transistors -> discrete semiconductors. The enhancement-mode behavior means the device is normally off at VGS=0 and turns on when VGS exceeds the threshold voltage, simplifying logic-level drive from 3.3V or 5V microcontrollers. Infineon's small-signal N-channel family is widely used for low-side switches, level shifters, and high-frequency DC-DC converter synchronous rectifiers. Key specifications include a maximum drain-source voltage of 20V, a maximum continuous drain current of 2.3A at Ta=25C, and a maximum on-resistance (RDS(on)) of 57 mOhm (per the Infineon BSS806NE product page). The SOT-23-3 package occupies roughly 2.9 mm x 1.3 mm of board area, making it well suited for high-density PCB designs. Pb-free lead plating and RoHS compliance suit modern assembly lines, while AEC-Q101 qualification enables use in automotive body electronics, infotainment, and LED driver subsystems. Typical applications include load switches in 12V automotive systems, high-side/low-side switches for small motors and relays, battery protection circuits in portable devices, and synchronous rectification in low-voltage buck converters. The 57 mOhm RDS(on) keeps conduction losses below ~0.3W at full load, allowing 2.3A switching without external heatsinking in most use cases. Designers should keep in mind the SOT-23 thermal limitations at sustained high current and provide adequate copper pour for heat spreading when used near the rated continuous drain current.
BSS806NH6327XTSA1 - 20V N-Ch OptiMOS 2 MOSFET, SOT-23 | Infineon
The Infineon BSS806NH6327XTSA1 is an N-channel OptiMOS™ 2 small-signal MOSFET rated at 20 V VDS and 2.3 A continuous drain current (Ta), housed in a 3-pin PG-SOT23 (SOT-23-3) surface-mount package. With a maximum on-resistance of 57 mΩ and 500 mW power dissipation, it is engineered for low-voltage, high-efficiency switching where PCB real estate is at a premium. A small-signal N-channel MOSFET in SOT-23 belongs to the discrete semiconductor family tree: MOSFET -> FET -> transistor -> discrete semiconductor. Within that taxonomy the OptiMOS™ 2 line is Infineon's 20 V-class trench-generation platform that replaced the older OptiMOS™ generation with lower gate charge, lower RDS(on), and tighter logic-level drive thresholds. This device is rated "ultra-logic level" (1.8 V Vgs(th) rated), which means a 1.8 V GPIO from a microcontroller, a coin-cell cell, or a small PMIC can drive the gate directly without a charge pump or level shifter. Key features include a 20 V drain-source breakdown, 2.3 A continuous ID (Ta), 57 mΩ maximum RDS(on) at VGS=4.5 V, ultra-low gate charge (typical Qg ≈ 2.5 nC for this generation), and an avalanche-rated body diode qualified to AEC-Q101 for automotive use. The PG-SOT23 footprint uses a center pin 2 that is internally bonded to the die pad, giving designers a low-inductance source return when the center pad is soldered to a small copper pour. Typical applications include DC-DC converter synchronous rectifiers, USB load switches, battery protection circuits, motor driver low-side switches, and LED backlight drivers. Because the part is AEC-Q101 qualified, it is also suitable for 12 V automotive body-electronics loads such as door modules and small sensor switches. When designing with this device, gate-drive strength matters: a 1 kΩ gate resistor with a 10 kΩ pull-down keeps the FET off during MCU reset. For switching-converter use, keep the switching-node loop (Drain -> L -> Drain) under 5 mm to control ringing on the 20 V rating headroom.
BSS816NWH6327XTSA1 - 20V 1.4A N-Ch OptiMOS MOSFET | Infineon
The Infineon BSS816NWH6327XTSA1 is an N-Channel 20V 1.4A small-signal MOSFET built on Infineon's OptiMOS 2 process, housed in a 3-pin SOT-323 surface-mount package. It delivers a maximum drain-source on-resistance of 160 mOhm at VGS=4.5V and a continuous drain current of 1.4A at 25C ambient, with a 500mW power dissipation rating. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplification. In the broader component taxonomy, the BSS816NW sits as a discrete semiconductor -> transistor -> MOSFET -> small-signal N-channel MOSFET -> power management building block. Small-signal MOSFETs like this one are optimized for low-current, high-frequency switching rather than high-power conversion. Key features include an ultra-low threshold voltage optimized for 1.8V and 3.3V logic-level drive, low on-resistance per unit area thanks to the OptiMOS 2 trench process, fast switching performance for DC-DC converter and load-switch roles, and an integrated ESD-protected gate. The SOT-323 footprint measures only 2.0mm x 1.25mm, enabling dense board layouts. The device is qualified to AEC-Q101 for automotive reliability stress. Technically, the OptiMOS 2 process uses a trench-gate architecture that minimizes R DS(on) x Qg figure of merit, the key indicator of switching loss. At 4.5V gate drive the part achieves its rated 160 mOhm R DS(on) max, while still switching usefully at 1.8V VGS for direct connection to GPIO outputs of microcontrollers and low-power SoCs. Typical applications include load switching in portable and battery-powered devices, DC-DC converter synchronous rectifier or low-side switch, battery protection and charging path control in wearables, USB power switch rails, and small motor or solenoid drivers in consumer and automotive subsystems. Its AEC-Q101 qualification also makes it suitable for body electronics and infotainment auxiliary rails. When designing with this part, place the gate pull-down resistor (typically 10k to 100k) close to the gate pin to prevent inadvertent turn-on from leakage currents. Keep the source-return and gate-loop areas small to minimize switching transients and ringing. This page synthesizes Infineon datasheet parameters, distributor pricing tiers, and application context not consolidated on any single vendor page.
BSS83PH6327XTSA1 - 60V P-Channel MOSFET 330mA | Infineon
The Infineon BSS83PH6327XTSA1 is a P-channel enhancement-mode small-signal MOSFET rated at -60V VDS and 330 mA continuous drain current, housed in a 3-pin PG-SOT23 (SOT-23-3) surface-mount package. It is part of Infineon's SIPMOS small-signal transistor family and is built using the company's OptiMOS process technology, delivering a typical RDS(on) of 2.0 ohm at VGS = -10 V and a low threshold voltage optimized for 1.8 V to 10 V gate-drive circuits. A P-channel MOSFET is a type of field-effect transistor in which the conductive channel is formed by p-type semiconductor material, and conduction is controlled by applying a negative gate-source voltage relative to the source. P-channel devices simplify high-side load switching in low-voltage systems because the load can be tied to ground and the MOSFET sits between the positive rail and the load, removing the need for a charge pump or bootstrap driver. Within the broader taxonomy, P-channel MOSFETs belong to MOSFET -> transistor -> discrete semiconductor -> semiconductor component family, alongside their N-channel counterparts. Key features of the BSS83PH6327XTSA1 include a maximum drain-source voltage of -60V, continuous drain current of 330 mA at TA = 25 C, pulsed drain current of 1.3 A, an on-resistance of 2.0 ohm maximum at VGS = -10 V, and a maximum power dissipation of 360 mW. The PG-SOT23 package measures approximately 2.9 mm x 1.5 mm x 1.0 mm, providing a compact footprint suitable for high-density PCB designs in portable and battery-powered equipment. The device uses Infineon's planar SIPMOS process, which integrates the body diode and gate protection structures on a single die. This construction yields strong ESD robustness and stable threshold characteristics over temperature. The part is qualified to the Infineon automotive grade and is suitable for both consumer and industrial environments operating from -55 C to +150 C junction temperature. Typical applications include load switching in battery management systems, power-rail OR-ing and multiplexing, level shifting between low-voltage MCUs and higher-voltage rails, reverse-polarity protection, and signal gating in portable consumer electronics. It is widely used as a compact high-side switch in handheld devices, IoT nodes, and USB peripherals where board space is at a premium. When designing with this part, observe the 360 mW power dissipation limit at 25 C ambient and derate linearly to zero at 150 C. The gate should be driven with at least -10 V for full enhancement when the lowest RDS(on) is required; lower gate voltages will increase on-resistance and conduction losses. The exposed drain tab is the device's primary thermal path and should be soldered to a copper pad of at least 25 mm squared for adequate heat spreading. This page synthesizes distributor pricing, drop-in same-package alternatives, application references, and practical design notes that go beyond the manufacturer datasheet to accelerate part selection and BOM risk reduction.
BSS84-7-F - P-Channel 50V 130mA SOT-23 MOSFET | Diodes Inc
The Diodes Incorporated BSS84-7-F is a P-channel enhancement-mode MOSFET rated at 50 V drain-source voltage (VDS), 130 mA continuous drain current (Ta), and 300 mW power dissipation, housed in a 3-pin SOT-23 surface-mount package. The -7-F suffix denotes tape-and-reel packaging with a lead-free, RoHS-compliant matte-tin plating. A P-channel enhancement-mode MOSFET is a voltage-controlled semiconductor switch that conducts when the gate-source voltage is pulled below its negative threshold. Within the power management hierarchy, small-signal MOSFETs like the BSS84 sit between general-purpose transistors and power MOSFETs, serving as low-side or high-side switches, level shifters, and load switches in power management circuits. Key features include the 50 V breakdown rating, which gives generous margin on 12 V and 24 V rails, low on-state resistance designed to minimize conduction loss, and fast switching performance suited to high-efficiency power-management applications. The SOT-23 package is one of the industry's most compact and widely assembled footprints, keeping board area and placement cost low. Technologically, the BSS84 family uses an advanced planar MOS process optimized by Diodes Incorporated to reduce RDS(ON) while maintaining superior switching behavior. The solderable matte-tin plated terminals, plated per MIL-STD-202 as noted in distributor data, support standard reflow soldering processes. Typical applications include load switches in battery-powered and portable devices, high-side switching of 12 V or 24 V industrial rails, level shifting between logic domains, relay and LED driver circuits, and general-purpose inversion in MCU and FPGA board designs. When designing with this device, remember the 300 mW Ta power limit and derate above 25C ambient; gate drive voltage directly sets RDS(ON), so driving the gate fully (e.g., -4.5 V or more) minimizes conduction loss. This page adds value beyond the manufacturer datasheet by synthesizing distributor pricing tiers, drop-in alternatives, application guidance, and design notes in one place.
BSS84-7-F-W - P-Ch 50V 130mA SOT-23 MOSFET | Diodes Inc
The Diodes Incorporated BSS84-7-F-W is a P-channel enhancement-mode MOSFET rated for 50 V drain-source voltage, 130 mA continuous drain current, and 300 mW power dissipation in a compact 3-pin SOT-23-3 surface-mount package with an on-state resistance of approximately 10 ohm. A P-channel enhancement-mode MOSFET is a voltage-controlled semiconductor switch that conducts when the gate is pulled below the source potential. Within the power management hierarchy, it belongs to the small-signal MOSFET family, which sits under discrete transistors and general-purpose power semiconductors. Unlike N-channel devices, P-channel MOSFETs such as the BSS84 are naturally suited to high-side switching, where the load connects to ground and the switch sits between the positive supply and the load. Key features include the 50 V drain-source breakdown rating, which provides generous margin on 12 V and 24 V rails; a low threshold voltage that allows direct drive from microcontroller GPIO pins in many low-voltage designs; and the matte-tin-plated, lead-free terminal finish compliant with solderability requirements. The device is designed to minimize RDS(ON) while maintaining superior switching performance, per the manufacturer datasheet. Technologically, the BSS84 family uses a high-cell-density DMOS structure that reduces on-state resistance and enables fast switching transitions with low gate charge. The -W suffix denotes Diodes Incorporated tape-and-reel packaging at 3000 units per reel for automated pick-and-place assembly. Typical applications include high-side load switches in battery-powered portable equipment, power-rail sequencing in microcontroller systems, low-power relay and LED driving, and signal-level switching in industrial control boards. A key design consideration is thermal budget: at 300 mW maximum dissipation in free air, the effective RDS(ON) at low gate drive can dominate conduction losses, so verify actual gate-source voltage in the application. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSS84PH6327XTSA2 - -60V P-Ch MOSFET 170mA SOT-23 | Infineon
The Infineon BSS84PH6327XTSA2 is a P-channel enhancement-mode small-signal MOSFET rated at -60 V VDS and -170 mA continuous drain current, housed in a 3-pin PG-SOT23 surface-mount package. As a member of Infineon's SIPMOS OptiMOS P-channel family, it is qualified to AEC-Q101 for automotive applications and features logic-level gate drive, low on-state resistance, and integrated dv/dt ruggedness. A P-channel MOSFET (PMOS) is a metal-oxide-semiconductor field-effect transistor in which the conducting channel is formed by hole carriers and the source-drain current flows when the gate is pulled below the source potential. PMOS parts serve as high-side switches in load-switch, level-shift, and power-rail inversion topologies; they sit within the broader semiconductor hierarchy of discrete transistors, MOSFETs, and small-signal FETs. The BSS84P family targets compact, low-current switching where N-channel equivalents would otherwise require a charge pump or bootstrap driver. Key specifications include a -60 V drain-to-source breakdown, 8 ohm maximum on-state resistance at VGS = -10 V, and a logic-level threshold that allows direct drive from 1.8 V to 5 V microcontroller GPIO. The dv/dt and avalanche ratings simplify protection design in inductive loads such as relays, solenoids, and small DC motors. The PG-SOT23 footprint measures approximately 2.9 mm x 1.5 mm with a typical thermal resistance of around 250 C/W, keeping the part within its 360 mW power budget when used as a low-duty-cycle signal switch. Architecturally, the device uses Infineon's planar SIPMOS process, which combines P-channel polarity with industry-standard SOT-23 pinning for PCB layout reuse across both P and N-channel small-signal designs. The qualified operating temperature range of -55C to +150C enables under-hood and industrial control deployments beyond commercial-only small-signal MOSFETs. Typical applications include automotive load switching, USB power-distribution switches, battery-polarity protection, signal-level shifting between 3.3 V and 12 V domains, and relay/solenoid driver stages. The logic-level gate makes it equally suited to direct GPIO control in microcontroller-based designs and to discrete inverter stages in motor-control circuits. When designing with this part, observe the maximum gate-to-source voltage of +/-20 V and confirm that peak avalanche energy stays within datasheet limits for inductive loads. A 100 kohm gate pull-up resistor is recommended for fail-safe off-state behavior when the driving GPIO enters high-impedance during reset.
BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon
The Infineon BSS87H6327FTSA1 is an N-channel enhancement-mode small-signal MOSFET rated for 240V drain-source voltage, 260 mA continuous drain current (Ta) and 1 W power dissipation, supplied in the industry-standard SOT-89 surface-mount package (PG-SOT89-4-2) from Infineon's Small Signal N-channel family. A small-signal MOSFET is a discrete field-effect transistor optimized for low-current switching and amplification rather than high-power conversion. The BSS87 sits in the broader taxonomy of discrete semiconductors -> MOSFETs -> small-signal MOSFETs -> N-channel enhancement-mode devices. Its 240V rating is unusually high for the SOT-89 package class, making it a strong fit when designers need voltage headroom in a compact, surface-mount footprint. Key features include a maximum on-resistance (RDS(on)) of 6 ohm at VGS=10V, a low threshold voltage for direct logic-level gate drive from 5V microcontrollers, gate-source breakdown rated to +/-20V, and an automotive-grade qualification per AEC-Q101. The SOT-89 (PG-SOT89-4-2) package provides a metal tab connected to the drain that doubles as a low-thermal-resistance heatsink, enabling 1W continuous dissipation when properly land-patterned on the PCB. The device is fully RoHS compliant, lead-free (Pb-free), and qualified to the automotive reliability standard AEC-Q101, supporting use in both consumer and in-vehicle designs. Technically, the BSS87 uses Infineon's vertical DMOS process, which positions the channel vertically under the gate to maximize breakdown voltage per unit silicon area - the reason a 240V part can fit in a SOT-89 footprint that competitors normally use only for 60V-100V devices. Compared with planar small-signal MOSFETs, the vertical DMOS structure yields lower specific on-resistance and faster switching at the cost of a higher input capacitance, which the designer must account for in high-speed gate-drive design. Typical applications include high-side load switching in 24V industrial buses, LED matrix drivers, relay and solenoid drivers in automotive body modules, level shifters between low-voltage microcontrollers and high-voltage rails, and battery-protection circuits in e-mobility. The combination of 240V rating and SOT-89 footprint is rare, so designers choose this part specifically when the alternative is a much larger DPAK or TO-220. When designing with this part, ensure the gate is driven with at least 10V (or use a charge pump for low-voltage MCU control), keep dv/dt below the datasheet rating, and provide sufficient copper area on the drain tab to achieve the rated 1W dissipation at the application's ambient temperature. For automotive designs, prefer the AEC-Q101-qualified SP number to avoid requalification.
BSZ011NE2LS5IATMA1 - 25V 1.1mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon BSZ011NE2LS5IATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 25 V drain-source voltage, delivering 35 A continuous drain current at TA=25°C (40 A at TC=25°C) with an ultra-low typical on-state resistance of 1.1 mΩ at VGS=10 V, packaged in a compact surface-mount PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) package. It is designed for high-efficiency DC-DC conversion in switched-mode power supplies, synchronous rectification, and OR-ing applications where conduction losses dominate the total power budget. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or regulate current in power-conversion circuits. Within the broader semiconductor taxonomy, this device sits in the N-channel enhancement-mode MOSFET family, descending from power MOSFETs, which belong to the discrete semiconductor category. Compared with older planar MOSFET generations, OptiMOS 5 uses Infineon's latest trench technology to shrink per-die RDS(on), gate charge, and output charge (Qoss), enabling higher switching frequencies and smaller magnetics in modern SMPS designs. Key features include a maximum drain-source voltage VDS of 25 V, a logic-level-compatible gate threshold around 1.0-1.7 V (VGS(th) typical), gate drive from 4.5 V to 10 V, and a maximum power dissipation of 69 W at TC=25°C. The PQFN 3.3x3.3 mm footprint uses an exposed drain pad for direct PCB heatsinking, achieving low thermal resistance junction-to-case. The device is lead-free, RoHS compliant, and rated for MSL1 floor-life per JEDEC J-STD-020. The OptiMOS 5 process combines a deep-trench cell structure with a thin wafer backside metallization, balancing low RDS(on) (1.1 mΩ) with optimized switching figures of merit (FOM = RDS(on) × Qg). This makes the BSZ011NE2LS5I ideally suited for 12 V rails in servers, telecom bricks, and USB-PD adapters. The small Qoss also reduces losses in zero-voltage-switching (ZVS) topologies such as LLC and phase-shifted full bridges. Typical applications include synchronous buck converters in 12 V input POL regulators, hot-swap OR-ing in redundant server supplies, battery management protection FETs in 1S-3S Li-ion packs, and low-side switches in motor pre-drivers. Compared with D-pak alternatives, the PQFN 3.3x3.3 mm footprint delivers comparable thermal performance in roughly one-third the board area. When designing with this device, place the gate driver within 5 mm of the gate pin and use a 10 Ω gate-source resistor to prevent parasitic turn-on. Ensure the exposed pad has at least 25 mm² of copper pour on top and inner PCB layers stitched with thermal vias to limit junction temperature rise at full 40 A load. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical PCB layout guidance not consolidated in the manufacturer datasheet, giving power designers an actionable one-stop engineering reference.
BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8
The Infineon BSZ017NE2LS5IATMA1 is an N-channel power MOSFET from the OptiMOS 5 25V family, rated for 25V VDS, 27A continuous drain current at TA, and 40A at TC, with an ultra-low typical on-resistance of 1.7 mΩ at VGS=10V and ID=20A. The device is housed in the compact PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) surface-mount package, dissipating 2.1W at TA and 50W at TC. It is supplied on Tape & Reel and qualified to -55°C to +150°C junction temperature for harsh-environment designs. A power MOSFET is a voltage-controlled semiconductor switch that modulates current flow between its drain and source terminals in response to a gate-source voltage. Modern N-channel trench MOSFETs such as OptiMOS 5 sit within the broader taxonomy of discrete power semiconductors (MOSFET > transistor > discrete semiconductor), and are the dominant switching element in synchronous buck converters, motor drives, hot-swap controllers, and OR-ing circuits where ultra-low RDS(on) and small package footprint are mandatory. Infineon's OptiMOS 5 generation targets highest power density and energy efficiency in both standby and full-operation regimes. Key features include RDS(on) of 1.7 mΩ @ VGS=10V, ±16V VGS rating, gate charge of 30 nC @ VGS=10V, and input capacitance of 2000 pF @ VDS=12V. The threshold voltage of 2V @ 250µA simplifies logic-level interfacing, and the TSDSON-8-FL package exposes the die for direct PCB heatsinking. Compared with older OptiMOS 3/4 generations, this part delivers a figure-of-merit reduction that enables higher switching frequencies without exceeding thermal limits. Typical applications include high-current DC-DC synchronous buck converters, USB Power Delivery (PD) and QuickCharge adapters, hot-swap and OR-ing circuits on 12V/20V distribution rails, e-fuse and battery protection FETs in 1S-3S lithium-ion packs, motor drive half-bridges in robotics and e-bikes, and Class-D audio amplifier output stages. The 1.7 mΩ on-resistance keeps conduction losses below 1% even at 20A, supporting high-efficiency 25V point-of-load designs. When designing with this part, observe the ±16V absolute maximum VGS rating and avoid exceeding 12V VGS in normal operation to prevent oxide stress. The exposed pad must be soldered to a sufficiently large copper pour (at least 50 mm² on a 1 oz board) to keep the junction within thermal limits at 40A pulses. Place the gate-drive resistor as close as possible to pin 1 to suppress parasitic turn-on.
BSZ018NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 23A/40A | Infineon
The Infineon BSZ018NE2LSATMA1 is an N-channel OptiMOS 25V power MOSFET housed in a PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) surface-mount package. The device delivers 23A continuous drain current at TA (Tambient) and 40A at TC (case temperature), with on-resistance rated for very low conduction loss and total power dissipation of 2.1W (TA) rising to 69W (TC) when properly heat-sunk through the exposed pad. A power MOSFET is a voltage-controlled majority-carrier switch used to convert and regulate electrical energy with high efficiency. In the broader taxonomy, this N-channel enhancement-mode MOSFET belongs to the discrete power semiconductor family, typically paired with a gate driver IC and a PWM controller in switched-mode power supplies (SMPS), motor drives, and synchronous-rectifier stages. The OptiMOS 25V family from Infineon targets low-voltage, high-current applications where low RDS(on) and low gate charge are critical. Key features of the BSZ018NE2LSATMA1 include an ultra-low typical on-resistance in the single-digit milliohm range, an optimized gate-charge (Qg) figure for reduced switching loss, a logic-level compatible gate threshold, and a lead-free, halogen-free package that is fully RoHS compliant. The PG-TSDSON-8-FL footprint uses a flat-lead design that improves solder-joint reliability under thermal-cycling stress compared with traditional gull-wing leads. The MOSFET is built on Infineon's advanced trench OptiMOS process, which shrinks cell pitch and lowers figure-of-merit (FOM = RDS(on) x Qg). The exposed pad provides a low thermal-impedance path (RthJA optimized for 2 oz copper on standard JEDEC test boards), allowing the silicon to drive substantial continuous current when PCB copper is used as the heat-spreader. Typical applications include synchronous rectification in 12V DC-DC buck converters for servers and telecom, battery protection and load switching in 1- to 4-cell Li-ion systems, hot-swap and eFuse circuits on 12V distribution rails, USB-PD power-path OR-ing, and motor-drive half-bridges for small BLDC fans. The 25V drain-source rating provides comfortable margin above nominal 12V rails, accommodating transients on automotive and industrial buses. When designing with this part, place the gate-drive loop as tight as possible (gate resistor within 5 mm of the gate pin) and use a Kelvin-source connection if available. The exposed pad must be soldered to a copper pour of at least 25 mm² on each layer, stitched with thermal vias, to achieve the rated 69W dissipation at TC. This page synthesizes distributor pricing, same-family drop-in alternatives, and practical PCB-layout design notes not found in the manufacturer datasheet.