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IRFS3306TRLPBF - 60V 160A N-Ch MOSFET, 4.2mΩ, D2PAK | Infineon
The Infineon IRFS3306TRLPBF is a 60 V N-channel power MOSFET rated for 160 A continuous drain current (ID) and 4.2 mΩ maximum on-resistance (RDS(on)) at VGS=10 V, housed in a surface-mount D2PAK (TO-263) package and shipped on 13-inch tape-and-reel with the PbF lead-free and halogen-free finish. Built on Infineon's IR MOSFET™ technology, it combines low conduction loss with an enhanced body diode that provides high dV/dt and dI/dt capability, making it well suited to synchronous rectification in switch-mode power supplies. A power MOSFET is a voltage-controlled majority-carrier device that uses an insulated gate to modulate conduction between the drain and source terminals. N-channel MOSFETs such as the IRFS3306TRLPBF are the workhorses of high-current switching because their low on-resistance minimizes I²R conduction loss while fast switching speeds reduce switching loss. Within the broader taxonomy, the IRFS3306TRLPBF sits as: power MOSFET -> N-channel enhancement-mode MOSFET -> discrete semiconductor -> power management component. Key electrical specifications include a drain-source breakdown voltage (VDS) of 60 V, gate threshold voltage of typically 2.0 V to 4.0 V, total gate charge (Qg) of 85 nC, continuous drain current of 120 A at 25 °C case (160 A pulsed/PCB-limited per IR datasheet), and power dissipation of 230 W at Tc=25 °C. The D2PAK surface-mount footprint exposes the drain tab, enabling direct attachment to a PCB copper pad for thermal dissipation in lieu of a discrete heatsink. The IRFS3306TRLPBF uses Infineon's HEXFET-style planar stripe cell architecture with an optimized body diode for hard-switched and high-frequency circuits. The combination of 4.2 mΩ RDS(on) at 10 V VGS, low Qg for reduced gate-drive loss, and avalanche-rated silicon gives designers headroom in 48 V telecom buses, 12 V/24 V automotive rails, and motor-drive half-bridges. Typical applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies (UPS), high-speed power switching, hard-switched high-frequency circuits, DC motor control, and battery protection circuits in 12 V/24 V systems. The D2PAK footprint is industry-standard and accepted by most PCB assembly lines. Design consideration: at high continuous current the part relies on a generous drain-pad copper pour (>= 1 oz copper, >= 1 sq inch) to keep junction temperature below 150 °C - the on-resistance rises sharply with temperature, so thermal design dominates efficiency. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IRFS4010TRLPBF - 100V 180A 4.7mOhm N-Ch MOSFET | Infineon
The Infineon IRFS4010TRLPBF is a 100V N-channel power MOSFET rated for 180A continuous drain current and a maximum on-resistance of 4.7 mOhm at VGS = 10V, housed in a surface-mount D2PAK (TO-263AB) package. The TRLPBF suffix denotes a 13-inch reel packing with lead-free (Pb-free) terminations. The device is built on Infineon's IR MOSFET (HEXFET) technology and is optimized for 10V gate drive, making it a drop-in companion to standard logic-level gate drivers commonly used in switched-mode power supplies. A power MOSFET is a voltage-controlled majority-carrier device used as a high-speed switch or linear element in power-conversion circuits. MOSFETs sit within the broader hierarchy of discrete semiconductors (transistors -> FETs -> MOSFETs -> power MOSFETs) and form the core switching element in synchronous rectifiers, DC-DC converters, and motor-drive half-bridges. Their near-zero gate current, fast switching, and easy paralleling make them preferred over BJTs for high-frequency power conversion. Key features include a 100V drain-to-source breakdown voltage (VDS), a continuous drain current of 180A at TC = 25C, pulsed current capability well above this for inrush transients, and an industry-standard D2PAK footprint that is mechanically interchangeable with the legacy TO-220 through-hole footprint when PCB real estate permits. The total gate charge (Qg) of 143 nC keeps driver losses modest at moderate switching frequencies, and the JEDEC-qualified die supports reliable operation in industrial environments. Typical applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies (UPS), battery protection and OR-ing circuits, high-speed power switching, DC motor drive, and hard-switched high-frequency circuits up to several hundred kilohertz. The wide SOA margin also suits automotive 48V mild-hybrid subsystems and e-bike controllers where the device's 180A rating provides ample design headroom.
IRFS4227TRLPBF - 200V 62A N-Channel HEXFET MOSFET D2PAK | Infineon
The Infineon IRFS4227TRLPBF is an N-channel HEXFET power MOSFET rated at 200 V VDS, 62 A continuous drain current (at Tc) and 330 W power dissipation (at Tc), housed in a surface-mount D2PAK (TO-263) package. Its 26 mOhm maximum on-resistance and 70 nC total gate charge are specifically optimized for Plasma Display Panel (PDP) sustain, energy recovery and pass switch applications. Advanced process technology yields a low E pulse rating that reduces power dissipation in hard-switched topologies, and the part is supplied on tape and reel in left-oriented packaging per the TRL suffix. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-driven semiconductor switch that controls current flow between drain and source terminals. N-channel power MOSFETs such as the IRFS4227 are widely used as the lowest-resistance switching elements in 100-300 V applications because electrons (the majority carrier) move faster than holes, yielding lower RDS(on) per unit silicon area than P-channel counterparts. This device belongs to Infineon's HEXFET family - a planar cell architecture that delivers a well-characterized, broad SOA and robust avalanche rating. Key features of the IRFS4227TRLPBF include 200 V drain-to-source breakdown voltage, 26 mOhm RDS(on) maximum at VGS = 10 V, 62 A continuous ID at case temperature 25C, 330 W maximum power dissipation at Tc, 70 nC total gate charge, and ±30 V gate-to-source voltage rating. The D2PAK (TO-263) surface-mount package has a low thermal resistance that allows the die to dissipate heat directly into the PCB copper pour, eliminating the need for an external heatsink in many high-current switching designs. Internally, the IRFS4227 uses a HEXFET cell structure with a robust body diode and avalanche-rated die. The advanced process technology optimizes the trade-off between RDS(on), gate charge, and diode reverse recovery, making the part particularly efficient in zero-voltage-switching (ZVS) and hard-switched bridge topologies such as PDP sustain power stages. The low RDS(on)*Qg figure of merit (~1.82 nC*Ohm) translates directly into lower switching and conduction losses. Typical applications include Plasma Display Panel (PDP) sustain switches and energy-recovery circuits, AC-DC SMPS (switch-mode power supply) primary-side switches, DC-DC converter high-side switches in telecom and server bricks, motor drive H-bridges for low-voltage industrial BLDC motors, and high-current solenoid/relay drivers. The D2PAK footprint is a long-standing industry standard, simplifying PCB layout and enabling second-source flexibility. When designing with this part, calculate worst-case conduction loss as P = ID^2 * RDS(on) and ensure junction temperature stays below 150C using the published thermal resistance curves. Gate-drive voltage should be 10 V nominal to fully enhance the channel; gate-source Zener protection within the die allows VGS transients up to ±30 V. Use a gate resistor of 10-100 ohm to control ringing without excessive switching loss. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IRFS4321TRLPBF - 150V 85A N-Ch HEXFET MOSFET D2PAK | Infineon
The Infineon IRFS4321TRLPBF is a 150 V single N-channel HEXFET power MOSFET rated for 85 A continuous drain current (Tc) and 350 W power dissipation (Tc), housed in a surface-mount D2PAK (TO-263-3, 2 leads + tab) package. Built on Infineon's IR MOSFET technology, it achieves a maximum drain-source on-resistance of 15 mOhm at VGS = 10 V and a total gate charge of 71 nC typical (110 nC maximum per Mouser snippet), positioning it as a high-efficiency synchronous rectifier for SMPS, motor control, and UPS power stages. An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage inverts the surface of a semiconductor body to form an n-type conduction channel between drain and source. HEXFET is Infineon's (formerly International Rectifier) trademarked family of power MOSFETs using a vertical DMOS cell structure with a hexagonal cell geometry that maximises channel density per unit area, reducing RDS(on) for a given silicon footprint. Within the broader component taxonomy, the IRFS4321TRLPBF belongs to: discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET -> HEXFET family. Key features include 150 V VDS rating (with avalanche energy rated for unclamped inductive switching), 15 mOhm maximum RDS(on) at VGS = 10 V, 71 nC typical Qg enabling fast switching transitions, and a maximum junction-to-case thermal resistance of 0.45 C/W (end-of-life RθJC after 1000 thermal cycles is 0.65 C/W). The D2PAK package supports high continuous current thanks to its large metal tab that doubles as the drain terminal and a primary thermal path to the PCB copper pour or external heatsink. From an application-fit perspective, the IRFS4321TRLPBF is well-suited to 100-150 V class synchronous rectification in telecom and server SMPS, hard-switched high-frequency converters, uninterruptible power supply (UPS) low-side switches, and motion-control class-D or three-phase inverter bridges. The 85 A Tc rating provides significant thermal derating headroom over 40-50 A alternatives when board copper is limited. When designing with this part, calculate conduction loss as P = ID2 × RDS(on) × RθJA-derating and verify that the system stays within the SOA curve printed in the manufacturer datasheet. Designers should also evaluate the VGS(th) and gate-drive voltage to ensure compatibility with the chosen controller. This page synthesises distributor pricing, drop-in alternatives and design notes that complement the manufacturer datasheet with supply-chain and engineering-decision context.
IRFS4321TRRPBF - 150V 83A N-Channel HEXFET MOSFET | Infineon
The Infineon IRFS4321TRRPBF is a 150V single N-channel HEXFET power MOSFET housed in a surface-mount D2PAK (TO-263) package, rated for 85A continuous drain current at 25C and 350W power dissipation. It features an ultra-low RDS(on) of 15 mOhm maximum at VGS=10V and a total gate charge of 71 nC, making it optimized for high-efficiency synchronous rectification and hard-switched SMPS topologies. An N-channel power MOSFET is a voltage-controlled semiconductor switch in which a positive gate-to-source voltage creates a conductive n-type channel between drain and source, allowing current flow with very low voltage drop. HEXFET refers to Infineon's proprietary cellular MOSFET technology that places millions of parallel HEX (hexagonal) cells on a single die to minimize RDS(on) per unit silicon area. Within the broader power semiconductor hierarchy, MOSFETs sit beneath IGBTs (for very high voltage) and above bipolar transistors (for switching speed) in switching converter and motor drive applications. Key features include an avalanche-rated single-pulse energy, integrated body diode for synchronous rectification, logic-level compatible gate drive at VGS=10V typical, and a 175C maximum operating junction temperature. The D2PAK package provides a low 0.65 C/W end-of-life thermal resistance junction-to-case after 1000 thermal cycles, enabling high-current operation with minimal external heatsinking. The device is RoHS compliant and lead-free (PBF suffix designation). The IRFS4321 uses Infineon's advanced process technology to achieve an excellent figure of merit (FOM = RDS(on) x Qg) of approximately 1.07 Ohm-nC, balancing conduction and switching losses for high-frequency circuits. Its low gate charge reduces driver losses at high switching frequencies above 100 kHz, while its low on-resistance minimizes conduction losses in high-current paths. Typical applications include uninterruptible power supplies (UPS), high-current synchronous rectification in switch-mode power supplies (SMPS), DC motor control, solar inverters, and industrial welding equipment. The 150V rating provides substantial margin for 48V bus telecom systems and 60V rectified industrial rails. When designing with this device, ensure the gate driver delivers at least 10V VGS to fully enhance the channel and minimize RDS(on). A 10-ohm gate resistor is recommended to dampen parasitic ringing. The tab is electrically connected to the drain and must be soldered to a sufficiently large copper pad for heatsinking.
IRFS4615TRLPBF - 150V 33A N-Ch MOSFET D2PAK | Infineon
The Infineon IRFS4615TRLPBF is a 150 V, 33 A N-channel power MOSFET built on the company's IR MOSFET™ technology, supplied in a surface-mount D2PAK (TO-263AB) package. It carries a maximum drain-source voltage (VDS) of 150 V, a continuous drain current (ID) of 33 A at TC, and a maximum on-resistance (RDS(on)) of 42 mΩ, with a low typical gate charge of 26 nC for fast switching performance. The TRLPBF suffix denotes a tape-and-reel packing and lead-free (Pb-free) finish. A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate a conducting channel between the drain and source terminals. In the system hierarchy, MOSFETs sit under discrete semiconductors and power transistors, and the IRFS4615 belongs to the N-channel enhancement-mode family, the most common configuration for low-side and high-side switching in switched-mode power supplies (SMPS), motor drives, and DC-DC converters. The IR MOSFET™ process used by Infineon combines a planar cell structure with optimized avalanche capability, balancing conduction loss, switching loss, and ruggedness. Key features include 144 W of maximum power dissipation (PD) at TC, a logic-level-friendly threshold class suitable for 10 V gate drive, low RDS(on) of 42 mΩ maximum for reduced conduction loss, and a total gate charge (Qg) of 26 nC typical that keeps driver loss low in hard-switched topologies. The D2PAK (TO-263) surface-mount package has an exposed metal tab that delivers a low thermal resistance path to a PCB copper pour, enabling compact designs without an external heatsink at moderate dissipation. Typical applications include primary-side switching in 48 V telecom and industrial DC-DC converters, synchronous rectification on the secondary side, low-voltage motor drives for pumps and fans, and battery protection disconnect switches in 24–72 V e-mobility systems. The 150 V rating provides ample headroom above 48 V telecom rails and standard 24/36 V industrial buses. When designing with this part, pay close attention to PCB copper area, gate-drive loop layout, and avalanche energy under unclamped inductive switching to fully exploit the device's ruggedness.
IRFS4620TRLPBF - 200V 24A N-Channel MOSFET | Infineon
The Infineon IRFS4620TRLPBF is a 200V, 24A N-channel power MOSFET in a surface-mount D2PAK (TO-263AB) package, featuring the company's IR MOSFET™ silicon technology. It delivers a maximum on-resistance of 77.5 mΩ at VGS=10V and a total gate charge of 25 nC, making it well-suited for high-efficiency synchronous rectification in switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and high-speed power switching applications. The device is rated for 144W power dissipation at 25°C case temperature and supports continuous drain current up to 24A at TC. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently switch or amplify electronic signals in power conversion circuits. Within the broader component hierarchy, MOSFETs belong to the transistor family, which sits under discrete semiconductors and is the foundational building block of modern switch-mode power electronics. N-channel MOSFETs like the IRFS4620TRLPBF conduct when a positive gate-to-source voltage is applied, and they are favored over P-channel parts in high-current applications because of their lower on-resistance per unit silicon area. Key features include a 200V drain-to-source breakdown voltage (VDS), 77.5 mΩ maximum RDS(on) at VGS=10V, 25 nC typical total gate charge (Qg), and an avalanche-rated body diode. The D2PAK (TO-263AB) surface-mount package provides a low thermal resistance path and is compatible with automated SMT assembly, making it the de-facto standard for high-current SMPS designs. The device is lead-free and RoHS compliant, meeting modern environmental requirements. The IRFS4620TRLPBF uses Infineon's IR MOSFET™ process technology, which optimizes the trade-off between on-resistance, gate charge, and avalanche ruggedness. Compared to older planar MOSFET generations, it offers lower conduction losses, reduced switching losses, and improved body-diode reverse-recovery characteristics—particularly valuable in hard-switched bridge topologies where the diode reverse recovery directly affects switching loss and EMI. Typical applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, high-speed power switching, hard-switched and high-frequency circuits, DC-DC converters, motor drives, and battery management. In each case, the 200V rating provides ample headroom for 48V telecom buses, 100V/120V industrial rails, and PFC boost stages. When designing with this MOSFET, pay close attention to gate-drive voltage (10V nominal, ±20V maximum VGS), heatsinking for the D2PAK tab, and PCB copper area for thermal dissipation. The part is a strong fit when switching frequencies are in the 50 kHz–250 kHz range typical of medium-power SMPS and PFC converters. This page synthesizes distributor pricing, drop-in alternatives, application guidance, and design considerations that go beyond the manufacturer's datasheet to help engineers select and apply the IRFS4620TRLPBF with confidence.
IRFS52N15DPBF - 150V 51A N-Channel HEXFET MOSFET | Infineon
The Infineon IRFS52N15DPBF is a single N-channel HEXFET power MOSFET rated at 150V VDS and 51A continuous drain current (TC), housed in a surface-mount D2PAK (TO-263) package. It features a maximum on-resistance of 32 mOhm and total gate charge of 60 nC, optimized for high-frequency DC-DC converters and plasma display panel drive circuits. The planar cell structure provides a wide safe operating area and silicon optimized for switching below 100 kHz. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate conduction between source and drain. Within the broader taxonomy, this part belongs to: MOSFET -> discrete semiconductor -> power transistor -> silicon switch. HEXFET is Infineon's (formerly International Rectifier's) planar cell technology brand, characterized by a hexagonal cell geometry that maximizes channel width per unit area, delivering low RDS(on) and high current capability in a compact die. Key electrical characteristics include 150V VDS, 51A ID (TC), 32 mOhm maximum RDS(on) at VGS=10V, 60 nC typical Qg, and 3.8W power dissipation on the PCB (TA) up to 230W with proper thermal management (TC). The device is qualified to JEDEC standards and is silicon-optimized for applications switching below 100 kHz, giving it excellent efficiency in mid-frequency buck/boost topologies. The D2PAK footprint offers a low RthJC, making it well-suited to surface-mount designs requiring high power density. Typical applications include primary-side switches in high-frequency DC-DC converters, plasma display panel sustain drivers, motor drive H-bridges (low-voltage side), synchronous rectifier stages, and uninterruptible power supply (UPS) inverter bridges. The wide SOA makes it tolerant of harsh avalanche and short-circuit conditions encountered during inductor saturation. When designing with this device, attention must be paid to gate drive strength - 60 nC total gate charge implies a peak gate current requirement of several amps during fast transitions. A dedicated gate driver IC is recommended over a microcontroller GPIO for switching frequencies above 50 kHz. The D2PAK exposed tab should be soldered to a copper pour area of at least 1 square inch to keep junction temperature within safe limits at full load. This page synthesizes distributor inventory, parametric drop-in alternatives, application circuit recommendations, and practical PCB layout guidance not found in the manufacturer datasheet alone - giving the design engineer a single source for sourcing, selection, and implementation.
IRFS52N15DTRLP - 150V 51A N-Channel HEXFET MOSFET D2PAK
The Infineon IRFS52N15DTRLP is a 150 V, 51 A N-channel power MOSFET built on Infineon's HEXFET technology and housed in an industry-standard D2PAK (TO-263) surface-mount package. The part delivers a typical on-resistance of 32 mOhm at VGS = 10 V, and supports up to 230 W of power dissipation at TC = 25 C with a thermal resistance suitable for high-current switching. The device targets high-frequency DC-DC converters, plasma display panels, motor drives, and synchronous rectification stages where low gate charge and fully characterized capacitance improve switching efficiency. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to route or modulate high currents in power conversion circuits. As an N-channel enhancement-mode device, the IRFS52N15DTRLP conducts drain current when a positive gate-to-source voltage (VGS) is applied, and blocks current flow when VGS falls below the threshold. Within the broader taxonomy, this part sits at: power MOSFET -> discrete semiconductor -> power management component, and is a building block in SMPS, motor controllers, and Class D audio amplifiers. Key features include a 60 A continuous drain current rating at 25 C, low gate charge for reduced switching losses, a fully characterized capacitance profile, and an avalanche-rated body diode for unclamped inductive switching. The D2PAK package provides a low thermal-resistance path from the die to the PCB drain tab, allowing high currents to be handled without external heatsinks in many surface-mount designs. The device is built on Infineon's planar HEXFET process, which optimizes the trade-off between on-resistance, switching speed, and avalanche ruggedness. Its low gate-to-drain charge (Qgd) reduces the Miller plateau region, enabling faster switching transitions and lower drive losses in high-frequency topologies such as forward converters, half-bridge stages, and synchronous rectifiers in telecom and server power supplies. Typical applications include high-current DC-DC converters (48 V to 12 V buck and 12 V to 1 V buck for server VRMs), uninterruptible power supplies (UPS) and battery protection, plasma display panel drivers, automotive relay replacement, and high-current synchronous rectification where the D2PAK footprint is preferred for PCB-side cooling. When designing with the IRFS52N15DTRLP, place it on a minimum 1 square inch of copper pour on the D2PAK tab to dissipate 230 W at TC = 25 C, and ensure the VGS drive reaches at least 10 V for full Rds(on) saturation. Always derate drain current to roughly half the 25 C rating once the case reaches 100 C, and add a gate-source Zener clamp for transient robustness in motor-drive environments. This page synthesizes distributor pricing, drop-in D2PAK alternatives, and practical design notes not found in the manufacturer datasheet alone.
IRFS7430TRL7PP - 40V 240A StrongIRFET N-Channel MOSFET | Infineon
The Infineon IRFS7430TRL7PP is a 40 V N-channel StrongIRFET power MOSFET rated for 240 A continuous drain current (Tc) and 375 W power dissipation in a 7-lead surface-mount D2PAK (TO-263-7) package. Built on Infineon's proven StrongIRFET technology with HEXFET die, it delivers a typical on-state resistance of 0.75 mΩ and a maximum rated R_DS(on) of approximately 1.2 mΩ at 10 V V_GS, with a total gate charge of 305 nC for fast, low-loss switching. What is a StrongIRFET MOSFET? StrongIRFET is Infineon's product family of rugged, high-current N-channel power MOSFETs targeting 40 V to 300 V bus rails. As a power MOSFET it sits in the transistor hierarchy: power MOSFET -> discrete semiconductor -> MOSFET -> transistor. Compared with standard MOSFETs, StrongIRFET devices emphasize low R_DS(on), high inrush/avalanche ruggedness, and optimized gate charge for high-current synchronous-rectification and motor-drive applications. Key features of the IRFS7430TRL7PP include a drain-to-source breakdown voltage (V_DSS) of 40 V, pulsed drain current capability above 500 A for transient loads, and a 7-pin D2PAK footprint with the tab acting as the drain. The gate is rated for ±20 V, threshold voltage typically 2.0-3.5 V, and the device supports operating junction temperatures up to 175 °C. The 7-lead D2PAK (TO-263-7) differs from the 3-lead D2PAK by providing four additional source-sense pins for reduced parasitic source inductance, enabling higher continuous current in the same board area. Typical applications include high-current DC-DC converters (24 V bus), brushless DC (BLDC) motor drives, synchronous rectification in telecom and server power supplies, battery management systems (BMS), hot-swap and OR-ing switches, and eMobility controllers. The combination of 240 A continuous rating, 0.75 mΩ R_DS(on), and 305 nC Qg makes it especially suitable where low conduction loss and robust avalanche capability are required. When designing with the IRFS7430TRL7PP, place the gate-driver loop as short as possible to suppress ringing and use a 10 Ω gate resistor for switching rates above 100 kHz. The exposed tab is electrically the drain and must be soldered to a sufficient copper area (typically ≥1 in²) to keep RθJA within the SOA of the application. This page synthesizes distributor pricing, drop-in StrongIRFET and cross-brand equivalents, and practical design notes not aggregated on the manufacturer datasheet.
IRFS7440TRLPBF - 40V 120A StrongIRFET N-MOSFET | Infineon
The Infineon IRFS7440TRLPBF is an N-channel StrongIRFET power MOSFET rated at 40 V VDS, 120 A continuous drain current (Tc), and 208 W power dissipation (Tc), housed in a surface-mount TO-263 (D2PAK) package. Key parameters include a maximum on-resistance of 2.5 mΩ at VGS=10 V and a typical total gate charge of 90 nC, optimized for 10 V normal-level gate drive. What is a StrongIRFET MOSFET? A StrongIRFET is Infineon's family of rugged N-channel power MOSFETs designed for high-current, low-frequency switching applications. It sits in the broader taxonomy: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> power management component. StrongIRFET devices use a planar cell architecture optimized for low RDS(on), high avalanche ruggedness, and reliable body-diode behavior, making them workhorses for motor drive and synchronous rectification. Key features include the 2.5 mΩ ultra-low RDS(on) at 10 V VGS, 120 A continuous drain current capability at 25°C case temperature, 208 W maximum power dissipation, and an optimized 90 nC gate charge that balances conduction loss with switching speed. The device is qualified to JEDEC standards and built on Infineon's silicon process tuned for switching below 100 kHz, where it delivers the best cost-to-performance ratio. The TO-263 (D2PAK) surface-mount package provides a low thermal-resistance path from the silicon die to the PCB copper pad, enabling the 208 W dissipation rating when mounted on a properly sized land pattern with adequate bottom-side copper. The package is also lead-free and RoHS compliant, with a matte-tin finish for reliable solderability. Typical applications include brushed and BLDC motor drives, battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifiers, resonant-mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, and DC/AC inverters. The 40 V rating makes it ideal for 12 V and 24 V bus systems in automotive, industrial, and telecom environments. When designing with this device, pay close attention to gate-drive voltage: it is optimized for 10 V VGS where it achieves the headline 2.5 mΩ RDS(on). Driving it from 5 V logic levels will dramatically increase on-resistance. Also note that continuous drain current derates strongly with case temperature—120 A is only valid at 25°C Tc. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Cross-brand equivalents were sourced from the verified alternatives cross-reference data.
IRFS7530TRLPBF - 60V N-Ch StrongIRFET 2mΩ 195A D2PAK | Infineon
The Infineon IRFS7530TRLPBF is a 60 V N-channel power MOSFET built on Infineon's StrongIRFET™ technology, optimized for ultra-low on-state resistance and high continuous drain current handling. Packaged in a surface-mount D2PAK (TO-263, also called PG-TO263-2), it delivers a maximum drain-source voltage of 60 V, a continuous drain current of 195 A at case temperature (Tc), a maximum drain-source on-resistance of 2 mΩ, and a maximum power dissipation of 375 W at Tc. Tape-and-reel packaging (TR) and an Pb-free finish (PBF suffix) make it compatible with high-volume automated SMT lines. A power MOSFET is a voltage-controlled semiconductor switch that modulates current flow between drain and source terminals when a sufficient gate-source voltage is applied. Within the broader hierarchy, MOSFETs belong to the transistor family, the discrete-semiconductor category, and finally the power-management ecosystem of a system. N-channel enhancement-mode MOSFETs like the IRFS7530TRLPBF are the workhorses of high-current switching because their majority carriers (electrons) deliver lower RDS(on) for a given silicon area than P-channel counterparts. Key features include an avalanche-rated body diode for unclamped inductive switching ruggedness, a logic-level-compatible gate threshold, and a low thermal resistance package that enables direct attachment to a PCB copper pour or external heatsink. The 2 mΩ RDS(on) minimizes conduction losses, while the 60 V rating gives ample headroom for 12 V and 24 V automotive/industrial rails. StrongIRFET™ process technology trades absolute lowest figure-of-merit for better avalanche energy, EMI behavior, and dv/dt immunity than competing trench MOSFETs. Architecturally, the device uses a trench-gate structure that increases channel density per unit area, driving down RDS(on) without inflating gate charge. Typical gate charge is in the low-nanocoulomb range, supporting switching frequencies suitable for synchronous rectification, hot-swap, and e-fuse applications. The combination of low Qg and low RDS(on) yields an excellent Figure-of-Merit (FOM = RDS(on) × Qg), which directly correlates to converter efficiency at a given switching frequency. Typical applications include high-current synchronous rectification in 12 V buck converters, OR-ing and hot-swap controllers for telecom and server power distribution, motor-drive H-bridges, battery protection and load switches in e-mobility, and industrial 24 V bus systems. The automotive-grade-compatible variant (IRFS7530-7PPBF) is commonly sourced where AEC-Q101 qualification is mandatory. When designing with this part, verify safe operating area (SOA) for pulsed load conditions, ensure the gate drive voltage fully enhances the device (typically 10 V VGS), and provide sufficient PCB copper or an external heatsink to keep Tj below 150 °C. The D2PAK package simplifies heatsink attachment via the exposed drain tab, which is electrically connected to pin 2.
IRFU5305PBF - -55V P-Ch HEXFET MOSFET, 31A, IPAK | Infineon
The Infineon IRFU5305PBF is a -55 V single P-channel HEXFET power MOSFET in a 3-pin IPAK (TO-251AA) through-hole package, delivering continuous drain current of -31 A at Tc and dissipating up to 110 W. Built using Infineon's fifth-generation HEXFET process, it combines extremely low on-resistance per silicon area with fast switching speed and a fully avalanche-rated ruggedized design rated to 175 °C operating junction temperature. A P-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier device in which the gate signal referenced to the source inverts the channel polarity to modulate drain current. P-channel variants are particularly valued in high-side load-switch and reverse-polarity-protection topologies because they simplify gate drive by tying the source to the system load and switching the drain to ground-returned loads. Within the broader taxonomy, this places the IRFU5305PBF in the hierarchy: discrete MOSFET -> power MOSFET -> P-channel MOSFET -> enhancement-mode power switch -> discrete semiconductor. Key features include a maximum drain-source on-resistance of 65 mΩ at VGS = -10 V, a typical total gate charge of 42 nC that minimizes driver losses at high switching frequencies, and a dynamic dv/dt rating that ensures robust performance in hard-switched bridge and buck applications. The device is RoHS compliant, lead-free, and 100 % avalanche-tested at the factory. Typical applications include high-side load switches in industrial 24/48 V bus systems, reverse-battery protection for automotive and telecom equipment, DC motor drive H-bridges, synchronous-rectifier low-side switches in buck converters, and power-OR-ing circuits in redundant supplies. Designers favor the IPAK (TO-251AA) footprint for its compact through-hole mounting and compatibility with standard TO-220 heat-sink clips when higher dissipation is required. When designing with this part, calculate conduction loss using P = ID² × RDS(on) × (1 + TC × (TJ − 25)) and verify that the steady-state junction temperature stays below 150 °C with adequate margin. Use a gate-source pull-up resistor of 10 kΩ to keep the device off during controller power-up glitches, and observe the safe operating area curve for pulsed loads. This page synthesizes distributor pricing, same-brand and cross-brand drop-in alternatives, parametric comparison, and practical design notes that the bare manufacturer datasheet does not present side-by-side.
IRFU9024NPBF - -55V P-Ch HEXFET 11A 175mOhm TO-251 | Infineon
The Infineon IRFU9024NPBF is a -55 V single P-channel HEXFET power MOSFET rated at 11 A continuous drain current (Tc) and 38 W power dissipation (Tc), housed in a through-hole IPAK (TO-251AA) package. Built on International Rectifier's fifth-generation HEXFET process, it delivers an industry-low on-resistance of 175 mOhm maximum at VGS = -10 V and a total gate charge of 12.7 nC, making it suitable for high-efficiency switching applications. A P-channel MOSFET is a type of metal-oxide-semiconductor field-effect transistor in which the channel is doped to conduct when a negative gate-to-source voltage is applied relative to an N-type substrate. In the broader taxonomy, it sits within discrete semiconductors -> transistors -> MOSFETs -> P-channel enhancement-mode power MOSFETs. The P-channel topology is particularly useful in high-side switching where a low-side N-channel would require a charge pump or bootstrap driver, simplifying gate-drive circuitry in battery-powered and load-switch applications. Key specifications include a continuous drain current of 11 A at Tc, pulsed drain current capability up to 44 A, a maximum drain-to-source on-resistance of 175 mOhm at VGS = -10 V, and a gate threshold voltage of 4 V maximum. The device is fully avalanche-rated, supports dynamic dv/dt, and offers fast switching speeds. The IPAK (TO-251AA) package provides a thermal resistance that allows operation up to 175C junction temperature. The fifth-generation HEXFET technology employs advanced processing techniques to minimize RDS(on) per silicon area, reducing both conduction losses and package footprint. Its fast intrinsic body diode and optimized FOM (RDS(on) x Qg) make it suitable for synchronous rectifier replacements, low-side switches in half-bridges, and DC load management circuits where reverse-polarity protection or active high-side control is required. Typical applications include battery protection and reverse-polarity blocking in 12 V / 24 V automotive systems, DC motor drivers for small pumps and fans, power-ORing circuits, hot-swap controllers, and high-side load switches in industrial PLCs. The P-channel structure eliminates the need for a high-side bootstrap supply, simplifying gate-drive design. When designing with this device, ensure that VGS does not exceed the +/- 20 V absolute maximum, and select a gate resistor to limit ringing below the dv/dt rating. For switching frequencies above 100 kHz, the 12.7 nC Qg and 175 mOhm RDS(on) FOM indicates the part balances conduction and switching losses efficiently. This page synthesizes distributor pricing, drop-in alternatives in the IPAK footprint, and practical design notes that complement the Infineon datasheet without duplicating it.
IRFZ24NPBF - 55V 17A N-Channel HEXFET MOSFET TO-220AB | Infineon
The Infineon IRFZ24NPBF is a 55V single N-channel HEXFET power MOSFET in a TO-220AB through-hole package, delivering 17A continuous drain current (Tc) and 45W maximum power dissipation (Tc). It uses advanced planar HEXFET technology to achieve extremely low on-resistance per silicon area, fast switching performance, and ruggedized device design optimized for switching applications below 100 kHz. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that sits in the broader hierarchy of discrete semiconductors -> transistors -> FETs -> MOSFETs. N-channel MOSFETs such as the IRFZ24NPBF are the workhorse of low-side switching in power supplies, motor drivers, and DC-DC converters, where the drain-source channel is enhanced by a positive gate-to-source voltage. They are valued for high input impedance, fast switching, and efficient power handling. Key features include a maximum drain-source on-resistance of 70 milliohm at VGS=10V, a total gate charge of 13.3 nC, and a planar cell structure optimized for the widest safe operating area (SOA). The JEDEC-qualified silicon supports switching frequencies below 100 kHz, while the industry-standard TO-220AB footprint enables universal compatibility with commercial-industrial through-hole designs. The IRFZ24NPBF uses Infineon's HEXFET power MOSFET process, in which thousands of parallel cells share the die to minimize RDS(on). The avalanche-rated design and broad SOA allow reliable operation during inductive switching transients such as those produced by relay coils, solenoids, and motor windings. The integrated body diode supports third-quadrant (synchronous) operation in bridge topologies. Typical applications include DC motor drives, solenoid and relay drivers, low-frequency switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), and battery protection circuits in 12V/24V lead-acid systems. The 55V rating also gives sufficient margin for 24V industrial bus rails and 48V telecom battery systems. When designing with the IRFZ24NPBF, ensure the gate driver can source and sink at least 1A peak to charge the 13.3 nC gate charge quickly, and add a 10 kohm gate-source pull-down resistor to prevent spurious turn-on. A heatsink with thermal compound is required above approximately 15W continuous dissipation to keep the junction below its 175C rating. This page synthesizes distributor pricing from DigiKey and Mouser, drop-in cross-brand alternatives verified against parametric data, and practical design notes not consolidated in the manufacturer datasheet.
IRFZ34NPBF - 55V 29A N-Channel HEXFET MOSFET | Infineon
The Infineon IRFZ34NPBF is a 55 V single N-channel HEXFET power MOSFET in a TO-220AB through-hole package, delivering 29 A continuous drain current (Tc) and 68 W power dissipation (Tc). Built on Infineon's fifth-generation HEXFET planar cell process, it targets commercial-industrial switching below 100 kHz where low on-resistance per silicon area and wide safe-operating-area (SOA) matter most. A power MOSFET is a voltage-controlled majority-carrier device that uses an insulated gate (typically silicon-oxide) to modulate conduction between drain and source. The HEXFET (hexagonal-cell) layout multiplies parallel cells to lower R_DS(on), while the planar process trades slightly higher specific on-resistance for rugged avalanche behavior and easier paralleling. Within the broader taxonomy, the IRFZ34NPBF sits as: N-channel MOSFET -> enhancement-mode MOSFET -> power MOSFET -> discrete semiconductor. The "NPBF" suffix denotes a lead-free (Pb-free) TO-220 variant that is RoHS-compliant for global commercial-industrial use. Key specifications include a maximum drain-source voltage V_DSS of 55 V, continuous drain current I_D of 29 A at 25 C case temperature, pulsed current handling per the safe-operating-area curve, and a typical R_DS(on) of about 40 mOhm at V_GS = 10 V. Threshold voltage is in the standard 2-4 V logic-compatible range, gate charge is around 22.7 nC, and the device is qualified to JEDEC standards with a 175 C maximum junction temperature. The TO-220AB package provides low thermal resistance and a familiar mechanical mounting footprint that has been industry standard for over four decades. Architecturally, the IRFZ34NPBF uses a planar DMOS cell optimized for switching frequencies below 100 kHz, which covers the majority of motor drives, DC-DC converters, and solenoid/relay drivers found in industrial control equipment. The silicon is tuned for broad distributor availability and improved repetitive-avalanche ruggedness, which is critical for inductive-load switching where the MOSFET must absorb the energy stored in the magnetic field when the device turns off. Typical applications include low-frequency switched-mode power supplies (SMPS), DC motor drives for industrial automation, solenoid and relay drivers, uninterruptible power supply (UPS) low-side switches, and general-purpose high-current load switching in 12 V / 24 V / 48 V systems. Automotive body-electronics conversions and LED driver power stages also use this part where 55 V V_DSS provides adequate margin above 24 V bus transients. When designing with this part, calculate conduction loss as I_D^2 x R_DS(on) and switching loss from gate charge Q_g, V_DS, and switching frequency. Ensure V_GS is driven to at least 10 V for full enhancement, and provide adequate heatsinking because the TO-220AB thermal resistance (junction-to-case) is low but junction-to-ambient is dominated by the heatsink choice. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IRFZ44NPBF - 55V 49A N-Channel HEXFET MOSFET | Infineon
The Infineon IRFZ44NPBF is an N-channel HEXFET power MOSFET rated at 55 V VDS, 49 A continuous drain current (Tc), and 94 W power dissipation, housed in a TO-220AB through-hole package. It features an extremely low on-resistance of 17.5 mOhm at VGS=10V and a total gate charge of 42 nC, making it one of the most efficient 55V-class MOSFETs in the TO-220AB footprint for switching power conversion applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently switch and amplify electronic signals in power conversion circuits. N-channel MOSFETs like the IRFZ44NPBF are the dominant switch topology in synchronous rectification, DC-DC converters, and motor drive stages because electron mobility in N-channel silicon gives lower RDS(on) per die area than equivalent P-channel devices. The IRFZ44NPBF belongs to the broader hierarchy of discrete semiconductors (MOSFET > power MOSFET > N-channel MOSFET > enhancement-mode MOSFET). Key features include advanced HEXFET process technology, avalanche energy rating (EAS) for unclamped inductive switching, low thermal resistance junction-to-case of 1.0 C/W, and a logic-level compatible gate threshold range of 1V to 3V (typical VGS(th) around 2V). The TO-220AB package provides a robust mechanical form factor with a metal tab that doubles as the drain terminal and a heatsink mounting surface, making the part well-suited for both through-hole PCB designs and chassis-mounted heatsink assemblies. Architecturally, the IRFZ44NPBF uses Infineon's planar HEXFET cell structure with vertical current flow between top-side source bond wires and the bottom-side drain tab. This vertical DMOS architecture delivers very low specific on-resistance, enabling the 17.5 mOhm figure at 49A continuous rating. The fast switching speed supports frequencies from DC to over 1 MHz when paired with a proper gate driver, and the ruggedized design tolerates avalanche energy events typical of motor and solenoid loads. Typical applications include SMPS (switched-mode power supply) primary-side switching, DC motor drive H-bridges (low-side position), solenoid and relay drivers, audio amplifier output stages, and Class-D amplifier power switches. Its 49A continuous rating comfortably handles 20-30A continuous loads with adequate heatsinking. When designing with this device, select a gate driver that can source/sink at least 1A peak to achieve sub-100ns switching transitions. For switching frequencies above 100 kHz, a dedicated gate driver IC such as the IR2110 or UCC27211 is recommended over direct MCU GPIO drive to minimize switching losses and prevent thermal runaway. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that supplement the manufacturer datasheet to help engineers evaluate the IRFZ44NPBF for new designs and second-source qualification.
IRFZ44NSTRLPBF - 55V 49A N-Channel HEXFET MOSFET D2PAK | Infineon
The Infineon IRFZ44NSTRLPBF is a 55V, 49A N-Channel HEXFET Power MOSFET housed in a surface-mount D2PAK (TO-263) package. It is rated for 49A continuous drain current at case temperature and 94W total power dissipation, with an industry-standard 17.5 mOhm maximum on-resistance optimized for high-current switching. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to modulate current flow between the drain and source terminals. The N-Channel enhancement-mode variant requires a positive gate-source voltage to turn on, and belongs to the broader category of power transistors (MOSFET -> FET -> transistor -> discrete semiconductor). HEXFET is Infineon's trademarked process technology that places the source metal cells in a hexagonal pattern to maximize channel density and minimize on-resistance per unit silicon area. Key features of the IRFZ44NSTRLPBF include extremely low on-resistance of 17.5 mOhm at VGS=10V, fast switching speed with 42 nC total gate charge, avalanche-rated ruggedness, and an operating temperature range of -55C to +175C. The D2PAK package provides a low thermal resistance path suitable for high-current PCB designs. The "STRLPBF" ordering code suffix indicates tape-and-reel packaging (STR), lead-free (Pb-free), and RoHS compliance. The device uses Infineon's advanced planar HEXFET technology, achieving low RDS(on) through hexagonal cell geometry and a vertically-diffused DMOS structure. The 17.5 mOhm RDS(on) at 10V VGS minimizes conduction losses, while the 42 nC gate charge enables high-frequency PWM operation typically up to several hundred kHz. Typical applications include DC motor drive circuits, solenoid and relay drivers, synchronous rectifiers in switch-mode power supplies (SMPS), low-side load switches in industrial automation, Class-D audio amplifiers, and uninterruptible power supplies (UPS). The wide safety margin between 49A rating and 17.5 mOhm RDS(on) makes it well-suited for high-current pulse applications such as automotive ECU drivers and battery management systems. When designing with this MOSFET, ensure the gate drive voltage reaches at least 10V for full RDS(on) specification; logic-level signals may not fully enhance the channel. A low-impedance gate driver and proper gate resistor (typically 10-100 ohm) are recommended to control ringing and switching losses. This page synthesizes distributor pricing, drop-in D2PAK alternatives, and practical design notes not found in the standalone manufacturer datasheet.
IRFZ48NPBF - 55V 64A N-Channel HEXFET MOSFET TO-220
The Infineon IRFZ48NPBF is an N-channel HEXFET power MOSFET rated at 55 V VDS and 64 A continuous drain current (at TC), packaged in a TO-220AB through-hole outline with 14 mΩ maximum on-resistance and 130 W power dissipation. The "PBF" suffix denotes a lead-free (Pb-free) terminal finish compliant with RoHS, and the part carries Infineon's HEXFET Power MOSFET branding inherited from International Rectifier. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used to switch or amplify power in electronic circuits. The N-channel variant conducts when a positive gate-to-source voltage is applied and is preferred over P-channel in most low-voltage, high-current applications because electron mobility is roughly 2-3× higher than hole mobility, yielding lower RDS(on) for the same die area. Power MOSFETs sit in the power-semiconductor hierarchy alongside IGBTs and BJTs and dominate applications below 250 V where switching frequency exceeds a few kHz. Key features of the IRFZ48NPBF include advanced planar HEXFET process technology that achieves 14 mΩ RDS(on) at VGS = 10 V, a fast switching speed with 54 nC total gate charge, and a ruggedized body diode rated for avalanche energy. The TO-220AB package offers low thermal resistance (junction-to-case) suitable for chassis-mounted heatsink operation, and the part is qualified to Infineon's industrial market standard. Typical applications include high-current DC-DC converters, motor drive H-bridges, solenoid and relay drivers, synchronous rectifier positions in switch-mode power supplies, automotive 12 V accessory switching, and uninterruptible power supply battery management. The 64 A continuous rating makes it suitable for inverter stages below 5 kW. When designing with this device, derate continuous current to roughly 25% of the rated figure without a substantial heatsink, ensure VGS(th) is comfortably exceeded by the gate-drive voltage under all temperature conditions, and add a gate-source resistor (typically 10-100 Ω) to suppress parasitic ringing.
IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon
The Infineon IRFZ48NSTRLPBF is an N-channel power MOSFET rated at 55 V VDS and 64 A continuous drain current (Tc), housed in a surface-mount D2PAK (TO-263) package. It uses Infineon's advanced process technology to achieve a low on-state resistance of 14 mΩ and a total gate charge of 54 nC, optimized for high-current switching at low conduction loss. The part is supplied on 13-inch Tape and Reel (TRL suffix), with lead-free Pb-free terminations (PBF) suitable for lead-free reflow profiles. A power MOSFET is a voltage-controlled semiconductor switch in which the gate field modulates a conduction channel between source and drain. The IRFZ48N belongs to Infineon's HEXFET power MOSFET family, which in turn is part of the broader discrete power semiconductor hierarchy: MOSFET -> power transistor -> discrete semiconductor -> power management component. Its low Rds(on) and high current rating make it a fundamental building block for DC-DC conversion, motor drive, and load switching where efficient low-side or high-side switching is required. Key electrical characteristics include a maximum drain-to-source voltage of 55 V, continuous drain current of 64 A at 25°C case temperature, pulsed drain current of approximately 220 A, and a static drain-to-source on-resistance of 14 mΩ at VGS = 10 V. The device is fully enhanced at VGS(th) of 2.0 V to 4.0 V, supports standard 10 V gate drive, and integrates an intrinsic body diode for inductive switching. Power dissipation is rated 3.8 W on the FR-4 board (Ta) and 130 W at the case (Tc). The internal architecture uses a planar stripe DMOS cell with a vertical drain structure that maximizes silicon area utilization and minimizes on-state losses. The 14 mΩ Rds(on) and 54 nC Qg trade-off is balanced for mid-frequency PWM applications (typically below 200 kHz), giving a Figure-of-Merit that suits continuous-conduction synchronous rectification, class-D audio output stages, and battery-protection switching. Typical applications include brushed DC motor drive, high-current synchronous rectification in secondary-side SMPS, solenoid and relay drivers, LED driving arrays, reverse-polarity battery protection, and automotive body-electronics switching. The D2PAK footprint is a drop-in compatible upgrade path for designs originally built around the TO-220 through-hole IRFZ48N. When laying out the PCB, use a substantial copper pour on the drain tab (the metal tab is the drain) for both thermal dissipation and short-loop current return. Keep the gate loop area as small as possible, use a 10 Ω to 100 Ω gate resistor to suppress ringing, and ensure the source-sense return is shared with the gate driver ground to prevent dv/dt-induced turn-on. This page synthesizes distributor stock data, drop-in alternatives, and PCB-layout guidance not found in the standalone datasheet.
IRGP50B60PD1-EP - 600V 75A WARP2 IGBT with Ultrafast Diode | Infineon
The Infineon IRGP50B60PD1-EP is a 600V, 75A WARP2-series Insulated Gate Bipolar Transistor (IGBT) co-packaged with an ultrafast soft-recovery diode, housed in a 3-pin TO-247AD through-hole package. It targets switched-mode power supply (SMPS) applications up to 150 kHz, combining low VCE(on) of 2.0V (typical) at IC = 33A with an equivalent on-resistance RCE(on) of 61 mOhm (typical). An IGBT is a minority-carrier power semiconductor that merges the high-input-impedance gate drive of a MOSFET with the low conduction loss of a bipolar transistor. Hybrid IGBT+diode co-packs such as the IRGP50B60PD1-EP occupy the power-management tier between discrete MOSFETs and high-voltage thyristors, sitting at the core of AC-DC and DC-DC conversion stages in telecom rectifiers, server front-ends, PFC boost stages, and ZVS/LLC resonant converters. NPT (Non-Punch-Through) wafer technology provides a robust trade-off between switching loss and short-circuit ruggedness. Key features include NPT technology, a VCE(on) of 2.0V (typical at 33A), co-packaged ultrafast soft-recovery diode for low EMI, low RCE(on) of 61 mOhm (typical), 150 kHz switching capability per the WARP2 designation, 390W power dissipation at TC = 25C, and a maximum junction temperature of 150C. The TO-247AD package supports isolated or non-isolated mounting and is compatible with standard heatsink clips. Architecture is an NPT (Non-Punch-Through) IGBT die monolithically integrated with a copackaged ultrafast soft-recovery rectifier that conducts during inductive freewheeling intervals, suppressing reverse-recovery spike voltages that otherwise couple across the switching node. Compared with trench-gate PT designs, NPT offers a wider safe-operating area and better thermal cycling endurance. Typical applications include telecom and server SMPS front-end PFC stages, ZVS/LLC resonant converter half-bridges, industrial uninterruptible power supplies (UPS), and high-power consumer SMPS. Designers choose this part where 600V breakdown margin and 33-75A continuous current are needed in a single TO-247 footprint. Design trade-off: the 2.0V typical VCE(on) at 33A results in approximately 66W of conduction loss at full load, so a properly-sized heatsink with thermal interface material is required to keep the junction below 150C and within the RthJC rating. This page synthesizes distributor pricing, drop-in equivalents (including the AUIRGP50B60PD1E automotive-grade variant), and practical design notes not found in the manufacturer datasheet alone.
IRL1404ZSTRLPBF - 40V 200A 3.1mΩ Logic-Level N-MOSFET | Infineon
The Infineon IRL1404ZSTRLPBF is a 40 V single N-channel HEXFET power MOSFET in a surface-mount D2PAK (TO-263AB) package, rated for 200 A continuous drain current at 25°C and an ultra-low on-resistance of 3.1 mΩ maximum at VGS = 10 V. It is a logic-level device that is fully driven from a 4.5 V gate, making it directly compatible with 5 V microcontrollers, FPGAs, and low-voltage gate drivers without a charge-pump or bootstrap stage. According to the manufacturer datasheet, the device dissipates up to 230 W at Tc = 25°C and operates to a junction temperature of 175°C. A power MOSFET is a voltage-controlled switch that uses the electric field of an insulated gate to modulate current flow between drain and source terminals. Within the broader semiconductor taxonomy it sits as a discrete switch under transistors and FETs, and within power-electronics hierarchies it is a key building block of buck converters, motor drives, hot-swap controllers, and battery-protection circuits. The IRL prefix indicates International Rectifier's (now Infineon) logic-level family, optimized for low-threshold drive while still delivering very low RDS(on) and high avalanche ruggedness. Key features include 75 nC total gate charge, fast switching speed, improved repetitive avalanche rating, 175°C maximum junction temperature, and lead-free / RoHS-compliant construction. The advanced process technology combines a 40 V breakdown rating with 3.1 mΩ RDS(on) at 10 V VGS - exceptionally low for a logic-level 40 V part - and supports continuous operation from logic-level rails without thermal derating beyond what the package can absorb. The D2PAK package provides a low thermal resistance path to a PCB copper pour, enabling compact high-current designs. Internally the die uses Infineon's HEXFET stripe-cell geometry and advanced process technology, where each cell is a vertical DMOS structure that minimizes cell pitch and maximizes channel density per unit area. The logic-level gate threshold (typ. 1.0–2.0 V) allows the device to be turned fully on at 4.5 V, which is critical for direct microcontroller drive in 5 V systems. The 75 nC Qg keeps driver losses low in PWM applications up to several hundred kHz. Typical applications include high-current DC motor drive, battery protection and load switching in 12 V automotive systems, synchronous-rectifier low-side switches in buck converters, hot-swap / inrush current limiting on 12 V and 24 V backplanes, and high-power LED driving. The combination of 40 V rating and 200 A current capability makes it well suited to 12 V lead-acid and 3–4 cell Li-ion packs. When designing with this part, calculate conduction loss as I² × RDS(on) and gate-drive loss as Qg × Vg × fsw; for switching applications above 100 kHz use a dedicated gate driver to deliver the 75 nC Qg quickly. Always verify SOA against your worst-case transient (inrush, short circuit, avalanche) using the datasheet's safe-operating-area curves, and ensure the D2PAK tab is soldered to a sufficient copper area to keep Tj below 150°C at full load. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond what the manufacturer datasheet alone provides, with a goal of giving the design engineer a faster, evidence-based decision path.
IRL2910STRLPBF - 100V 55A Logic-Level N-Channel MOSFET | Infineon
The Infineon IRL2910STRLPBF is a logic-level N-channel HEXFET power MOSFET rated at 100V drain-source voltage and 55A continuous drain current (Tc), housed in a surface-mount D2PAK (TO-263) package with tape-and-reel packaging. It features an ultra-low on-resistance of 26 mOhm maximum at VGS=10V and a low 93.3 nC total gate charge, making it suitable for high-efficiency switching and motor-drive applications. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used as a switch or amplifier in power and signal circuits. Logic-level MOSFETs like the IRL2910 are a sub-category optimized for direct drive from microcontroller GPIO pins (3.3V or 5V) without requiring gate-driver stages. Within the broader taxonomy, MOSFETs sit under transistors, then under discrete semiconductors, then under electronic components. Key features include a logic-level gate threshold (VGS(th) typically around 1V-2V), avalanche-rated ruggedness, and a continuous drain current of 55A at 25C case temperature with linear derating to higher temperatures. The D2PAK package offers an exposed metal tab that functions as a heatsink surface, supporting the 3.8W power dissipation at TA and up to 200W at TC. This combination of low Rds(on), high current, and surface-mount convenience enables compact designs replacing larger through-hole TO-220 parts. Architecturally, the IRL2910 uses Infineon's HEXFET cell structure, which provides low gate charge and fast switching. The logic-level gate drive enables direct connection to MCUs and low-voltage gate drivers in battery-powered and 12V automotive systems. The 26 mOhm Rds(on) at 10V VGS keeps conduction losses low in high-current paths such as motor windings and synchronous-rectifier stages. Typical applications include 12V and 24V brushless DC (BLDC) motor drives, solenoid drivers, high-current load switches in industrial automation, synchronous rectification in switch-mode power supplies (SMPS), and Class-D audio amplifier output stages. The combination of logic-level drive and high current makes it especially attractive in audio amplifier output stages where it is often seen in legacy and DIY designs. When designing with this MOSFET, ensure adequate heatsinking via PCB copper area connected to the D2PAK tab. Switching losses dominate in PWM applications above 50 kHz; gate-drive resistance should be sized to control dV/dt. Always check SOA (Safe Operating Area) for pulsed loads to avoid second-breakdown failure. This page synthesizes distributor pricing, drop-in alternatives from verified cross-reference data, and practical PCB layout notes not found in the bare manufacturer datasheet.
IRL2910STRRPBF - 100V, 55A N-Ch MOSFET | Infineon | D2PAK
The Infineon IRL2910STRRPBF is a 100 V, 55 A N-channel power MOSFET built on the company's IR MOSFET™ planar process and housed in a surface-mount D2PAK (TO-263) package. According to the manufacturer datasheet, the device is rated for continuous drain current of 55 A at TC, a maximum drain-to-source on-resistance of 26 mΩ, and is supplied on a 13-inch tape-and-reel with matte-tin over nickel terminations and lead-free (PBF) plating. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled, majority-carrier switch used for switching and amplifying DC/DC or motor-drive stages; the IRL2910 belongs to the 100 V logic-level N-channel family that bridges standard MOSFETs, logic-level MOSFETs, and high-current discrete switches in the Infineon HEXFET/IR MOSFET power tree. Logic-level VGS(th) variants allow the part to be driven directly from microcontrollers or gate-driver ICs without a bootstrap charge pump. Key features include a 100 V VDS rating that provides 30%+ headroom over 72 V telecom rails, an ultra-low 26 mΩ Rds(on) at VGS=10 V that minimizes conduction loss at high current, a logic-level VGS(th) of 1.0 V–2.5 V enabling direct MCU/GPIO drive, an avalanche-rated die (200 W power dissipation at TC), and a built-in body diode for half-bridge and synchronous-rectifier topologies. The D2PAK package offers a low 0.5 °C/W junction-to-case thermal resistance, suitable for high-density surface-mount power designs. Architecturally, the IRL2910 uses a planar HEXFET cell with a vertical DMOS structure, optimized for low Rds(on) per die area and robust avalanche energy handling. The lead-free, RoHS-compliant D2PAK package is qualified to MSL1 for standard reflow profiles. According to the manufacturer datasheet, the part is rated for an operating junction temperature of -55 °C to +175 °C. Typical applications include DC-DC converters, motor drives (12 V/24 V/48 V brushed and brushless), solenoid/relay drivers, synchronous rectifiers, and high-current load switches. The combination of 100 V rating, 55 A ID, and surface-mount D2PAK also suits industrial automation, telecom secondary-side hot-swap stages, and Class-D audio output stages. When designing with this device, ensure VGS drive voltage is at least 4 V above VGS(th) for full enhancement; use a gate-driver IC such as IR2109SPBF or IR2110SPBF if the MCU pin cannot source 1 mA peak gate charge. Place the gate resistor (10–100 Ω) close to the gate pin to dampen parasitic ringing, and verify SOA at the worst-case VDS*ID point for pulsed loads. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.