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IRL3705NPBF - 55V 89A N-Channel HEXFET MOSFET | Infineon
The Infineon IRL3705NPBF is a fifth-generation HEXFET N-Channel power MOSFET rated for 55 V VDS, up to 89 A continuous drain current at Tc (77 A per the Mouser listing at lower-case conditions), and 170 W power dissipation in a TO-220AB through-hole package. It features a logic-level gate drive with a typical on-resistance of 10 mΩ, a gate charge of 65.3 nC, and avalanche-rated ruggedized silicon built on Infineon's HEXFET planar cell process. The 'PBF' suffix denotes a lead-free (Pb-free) terminal finish compliant with RoHS. An N-channel power MOSFET is a voltage-controlled majority-carrier device that uses an insulated gate to modulate conduction between drain and source. MOSFETs sit within the power semiconductor hierarchy (MOSFET -> power transistor -> discrete semiconductor) and serve as the primary switching element in DC-DC converters, motor drivers, and load switches. Logic-level MOSFETs such as the IRL3705N are optimized to be driven directly from 5 V or 3.3 V microcontrollers without requiring a dedicated gate-driver IC. Key features include 10 mΩ R_DS(on) at V_GS = 5 V, avalanche-rated single-pulse energy, 175 °C maximum junction temperature, and a planar cell structure that produces a wide Safe Operating Area (SOA). The TO-220AB package offers a low thermal resistance path through the tab to an external heatsink and accepts through-hole mounting for high-current applications. Internally, the device uses Infineon's fifth-generation HEXFET process, where thousands of parallel cells share the die area to minimize conduction loss. The low gate charge (65.3 nC typical) reduces driver losses at high switching frequencies, while the ruggedized body diode handles reverse-recovery in half-bridge and synchronous-rectifier topologies. Typical applications include high-current DC motor drive, solenoid and relay switching, battery protection circuits, low-voltage (<100 kHz) DC-DC converters, and uninterruptible power supplies. The logic-level gate makes it especially suitable for direct MCU-driven switching without a pre-driver stage. When designing with this part, always verify that V_GS(th) and dynamic R_DS(on) at the actual gate-drive voltage fit the thermal envelope at maximum load, and ensure that the drain tab is mechanically and thermally bonded to an adequate heatsink for currents above ~30 A continuous. This page synthesizes distributor pricing, parametric drop-in alternatives in the same TO-220AB footprint, and practical design notes not found in the manufacturer datasheet alone.
IRL40S212ARMA1 - 40V 195A 1.9mOhm StrongIRFET MOSFET | Infineon
The Infineon IRL40S212ARMA1 is an N-channel power MOSFET built on Infineon's StrongIRFET™ technology, rated at 40 V drain-source breakdown, 1.9 mOhm maximum on-resistance, and 195 A continuous drain current (at Tc) in a PG-TO263-3 (D2PAK) surface-mount package. The device delivers up to 231 W power dissipation (Tc) and is qualified for high-current switching applications where low conduction loss is critical. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or chop current in power conversion circuits. Within the broader semiconductor taxonomy, this part sits as: power MOSFET -> discrete semiconductor -> N-channel MOSFET -> voltage-rated switching device. The 'StrongIRFET' family is engineered by Infineon for low Rds(on) per unit silicon area, optimized for synchronous rectification, motor control, and high-current DC-DC conversion stages where every milliohm of conduction loss translates directly into watts of waste heat and efficiency loss. Key features include the 40 V VDS rating suitable for 12 V and 24 V bus systems, an ultra-low 1.9 mOhm typical Rds(on) at VGS=10 V that minimizes I²R losses at high current, and a logic-compatible gate threshold that simplifies microcontroller-driven switching. The D2PAK (TO-263) package provides a low thermal-resistance path through the die-attach paddle, enabling high continuous current without forced air cooling in many applications. Architecturally, the IRL40S212 uses a planar cell layout optimized for the StrongIRFET process, with a heavy copper lead frame and a large exposed drain tab. This construction yields a junction-to-case thermal resistance suitable for PCB-mounted heatsink attachment. The 195 A Tc rating reflects case-cooled operation; in free air the same device supports much lower continuous currents due to the theta_JA thermal envelope of the D2PAK package. Typical applications include high-current synchronous rectification in 12 V buck converters, brushed and BLDC motor drive stages for industrial automation and e-mobility, battery protection and load switching in 24 V systems, and high-power Class D audio amplifiers where the MOSFET switches hundreds of watts at audio frequencies. The low Rds(on) reduces rectifier loss and improves overall system efficiency. When designing with this device, ensure the PCB copper area under the drain tab is maximized (typically 1 oz copper over at least 1 square inch) and that gate-drive voltage reaches 10 V for full enhancement. Designers should also consider the safe operating area during switching transients, especially when driving inductive loads where VDS overshoot can exceed the 40 V rating without a snubber. This page synthesizes distributor pricing, drop-in StrongIRFET alternatives, and practical design notes not found in the manufacturer datasheet alone. The cross-reference list highlights same-package drop-in options from the same StrongIRFET family and cross-brand equivalents verified for the PG-TO263-3 footprint.
IRL540NPBF - 100V 36A N-Channel HEXFET MOSFET TO-220
The Infineon IRL540NPBF is a 100V, 36A N-channel HEXFET power MOSFET in a TO-220AB through-hole package. It uses logic-level gate drive with a maximum on-resistance (RDS(on)) of 44 milliohms, a continuous drain current of 36 A at Tc, and total gate charge of 49.3 nC, making it suitable for switching applications up to about 140 W of dissipation. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to commutate current between the drain and source terminals. Power MOSFETs belong to the discrete semiconductor family, sitting between signal-level transistors and high-power IGBTs. They dominate applications below 600 V thanks to their fast switching, easy gate drive, and high input impedance. The IRL540NPBF specifically is a logic-level device: its gate can be driven from 4 V Vgs onward, allowing direct control from microcontrollers, gate drivers, or 5 V logic rails without a charge pump. Key differentiating features include a 100 V VDS rating that provides ample headroom for 48 V telecom, automotive 12 V/24 V, and battery-powered systems, and a 49.3 nC Qg that enables switching frequencies from 100 kHz to 1 MHz in DC-DC and motor drive circuits. The TO-220AB package allows hand-solderable through-hole mounting and provides a thermal resistance around 62 C/W junction-to-case, with a typical maximum power dissipation of 140 W at 25 C case temperature. The device is built on Infineon's HEXFET planar process technology, which combines a vertical DMOS structure with a polysilicon gate for low on-resistance per unit area. Its avalanche-rated design withstands unclamped inductive switching transients, important for motor and solenoid loads where back-EMF pulses occur at turn-off. The logic-level gate threshold (typically 1 V to 2 V, max 2 V to 2.5 V specified in datasheet) lets designers omit level-shift circuitry. Typical applications include low-voltage DC motor drives, PWM speed controllers, solenoid and relay drivers, synchronous-rectifier stages in low-side switch positions, LED drivers, and high-side switches in 24 V industrial systems. It is also widely used in e-bike and scooter controllers, audio amplifier output stages, and battery protection circuits. When designing with the IRL540NPBF, observe the SOA curve carefully: at high VDS combined with high ID, the device can only handle pulsed operation. A gate-source Zener clamp of 16 V is recommended for protection against Vgs overstress. Layout should keep the gate loop short to minimize ringing during switching. This page synthesizes distributor pricing, parametric alternatives, and practical design notes not found in the manufacturer datasheet alone.
IRL540NSTRLPBF - 100V 36A N-Channel MOSFET | Infineon | D2PAK
The Infineon IRL540NSTRLPBF is a logic-level N-channel power MOSFET rated at 100 V VDS, 36 A continuous drain current (Tc), and 44 mΩ maximum on-resistance at VGS=10 V, housed in a surface-mount TO-263 (D2PAK) package. It accepts a gate drive of only 5 V, eliminating the need for a gate-driver stage when driven directly from a microcontroller or low-voltage logic. Power dissipation is rated 3.8 W at TA=25 °C and 140 W at Tc=25 °C, with a total gate charge of 49.3 nC. Key features include HEXFET power MOSFET technology, avalanche-rated single-pulse robustness, low RDS(on) for reduced conduction losses, fast switching transitions, and a logic-level gate threshold that allows direct 5 V MCU interfacing. The TO-263 (D2PAK) footprint provides a low thermal-resistance path via the exposed tab, enabling PCB heatsinking through the drain pad. This device uses Infineon's HEXFET planar cell architecture with optimized die layout for low figure-of-merit (FOM = RDS(on) × Qg). Compared with standard MOSFETs, the IRL540N family delivers lower conduction loss per unit silicon area, which translates to smaller package size for a given current rating. The logic-level threshold (VGS(th) typically 1-2 V) is achieved by a thinner gate oxide, while still maintaining the 100 V breakdown rating for bus-voltage applications. Typical applications include DC motor drive and PWM speed control, solenoid and valve drivers, power switching circuits, low-voltage high-current SMPS synchronous rectification, LED drivers, automotive 12 V/24 V bus loads, and battery protection in pack-level BMS designs. The surface-mount D2PAK enables automated assembly and improved thermal coupling compared to through-hole TO-220 alternatives in the same die family. When designing with this MOSFET, observe safe operating area (SOA) limits: single-pulse avalanche energy must be derated with temperature. The exposed tab must be soldered to a sufficient copper area (≥1 square inch) to keep junction temperature below 175 °C under worst-case load. A gate-source resistor of 10-100 Ω is recommended to suppress ringing.
IRLB3813PBF - 30V, 260A StrongIRFET N-MOSFET | Infineon | TO-220AB
The Infineon IRLB3813PBF is an N-channel StrongIRFET power MOSFET rated at 30 V VDS(max), 260 A ID(max at Tc), and 1.95 mOhm RDS(on) max at 10 V VGS, housed in a through-hole TO-220AB package. It is a HEXFET-style part optimised for low RDS(on) at logic-level gate drive (4.5 V VGS), with a typical total gate charge of 57 nC. The device dissipates up to 230 W at Tc=25C and is qualified to JEDEC standards for the industrial market per the manufacturer datasheet. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used for switching and amplifying signals in power electronics. Within the broader taxonomy, MOSFETs belong to discrete semiconductors -> transistors -> field-effect transistors -> power switches. The N-channel enhancement mode variant IRLB3813PBF conducts when a positive gate-to-source voltage is applied and blocks current when VGS is below threshold. Its very low on-resistance minimises conduction losses in high-current DC paths, making it the preferred switch for synchronous rectification, motor drive, and high-current load switching. Key differentiating specifications include an ultra-low RDS(on) of 1.95 mOhm at 10 V VGS, 57 nC typical total gate charge (Qg), and an avalanche-rated single-pulse current capability. Logic-level gate drive (full enhancement at VGS = 4.5 V) allows direct control from 5 V microcontrollers or gate-driver ICs without bootstrap charge pumps. The HEXFET cell structure gives a robust body diode and characterised avalanche energy, simplifying design in hard-switched bridge topologies. The IRLB3813PBF uses Infineon's StrongIRFET planar cell technology, optimised for lowest conduction loss at industrial-grade switching frequencies (typically 20-100 kHz). Compared to the older IRF540N-family generation, the IRLB3813 offers roughly 5x lower on-resistance in the same TO-220AB footprint, reducing heatsink requirements in battery protection, UPS, and high-current hot-swap applications. Typical applications include UPS and inverter bridges, 12 V and 24 V bus hot-swap switches, high-frequency isolated DC-DC converters with synchronous rectification, battery protection and BMS discharge FETs, power tool motor drives, and industrial solenoids/relay replacement. When designing with this part, place a 10 kOhm gate-to-source pull-down resistor to prevent unintended turn-on from dv/dt-induced Miller coupling. Verify SOA at the operating VDS and pulse duration; planar StrongIRFET cells are robust but thermal limits at 230 W (Tc) require careful heatsink selection at continuous high current. This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IRLB4030PBF - 100V 180A N-Channel HEXFET MOSFET | Infineon
The Infineon IRLB4030PBF is a 100 V single N-channel HEXFET power MOSFET rated at 180 A continuous drain current (Tc) with 4.3 mOhm maximum on-resistance, housed in a TO-220AB through-hole package. The device is part of Infineon's StrongIRFET power MOSFET family and is qualified to JEDEC standards, delivering 370 W of power dissipation at Tc and optimized for logic-level drive with full performance at 10 V VGS and acceptable operation down to 4.5 V VGS. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch used for switching and amplifying signals in electronic circuits. MOSFETs are the dominant switching element in modern power electronics because they combine high input impedance with low on-state conduction loss, fast switching speed, and excellent thermal performance. Within the broader taxonomy, the IRLB4030PBF sits in the N-channel enhancement-mode power MOSFET category, which falls under discrete semiconductors > transistors > MOSFETs, and is widely used as the low-side or high-side switch in DC-DC converters, motor drives, and synchronous rectification stages. Key specifications include a drain-to-source breakdown voltage of 100 V, continuous drain current of 180 A at Tc, pulsed drain current capability beyond 180 A, ultra-low RDS(on) of 4.3 mOhm maximum at VGS=10 V, total gate charge of 87 nC, and a logic-level gate threshold compatible with 4.5 V drive. The TO-220AB package with a metal tab supports robust mechanical mounting and direct heatsink attachment for high-current applications. The HEXFET process technology uses a hex-cell vertical DMOS structure that distributes current uniformly across the die, reducing localized hot spots and improving avalanche ruggedness. The IRLB4030PBF is specifically engineered for hard-switched and high-frequency circuits, where its low Qg and low RDS(on) product minimize conduction and switching losses simultaneously. Its logic-level gate drive simplifies interface to microcontrollers, gate drivers, and battery-powered systems. Typical applications include DC motor drives, high-efficiency synchronous rectification in switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), high-speed power switching converters, and hard-switched high-frequency circuits. The 100 V rating provides comfortable margin for 48 V telecom buses, battery-powered systems up to 60 V, and motor drives operating from rectified AC mains. When designing with this device, ensure that VGS does not exceed +/-20 V absolute maximum, use a gate-source resistor of 10-100 ohm to dampen parasitic ringing, and provide adequate heatsinking for continuous operation above 50 A. The avalanche energy rating must be respected for unclamped inductive switching applications such as solenoid and motor drivers.
IRLB4132PBF - 30V 78A N-Channel HEXFET MOSFET TO-220
The Infineon IRLB4132PBF is an N-channel HEXFET power MOSFET rated at 30V VDS and 78A continuous drain current (Tc), with 140W maximum power dissipation, housed in an industry-standard TO-220AB through-hole package. It is built on Infineon's proprietary HEXFET process and optimized for 5V gate-drive operation, making it directly compatible with TTL-level logic and standard gate drivers without the need for a charge pump or bootstrap supply above 10V. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used to switch or amplify electronic signals in power-conversion circuits. N-channel MOSFETs such as the IRLB4132PBF sit in the broader hierarchy of discrete semiconductors (MOSFET -> transistor -> semiconductor -> electronic component) and are typically selected for low-side or high-side switching where the drain is tied to the load and the source returns to ground. The "logic-level" gate threshold rating (typically 1V to 2.5V Vgs(th)) means the device turns on fully with a 5V drive, simplifying microcontroller interfaces in UPS, inverter, and motor-drive designs. Key features include an ultra-low on-resistance of approximately 3.5 mOhm at VGS=10V (and roughly 5 mOhm at VGS=4.5V), avalanche-rated ruggedness, and a 175 C maximum operating junction temperature. The TO-220AB package provides a thermal resistance (junction-to-case) of about 1.05 C/W when properly mounted to a heatsink, enabling sustained high-current switching in space-constrained designs. The HEXFET cell structure combines a vertical DMOS architecture with a hexagonal cell layout, balancing conduction loss and switching speed. The 30V VDS rating leaves ample headroom for 12V bus applications, while the 78A continuous rating supports high-current inverter stages where traditional MOSFETs would otherwise require paralleling. Typical applications include uninterruptible power supplies (UPS), DC-AC inverters, low-voltage motor drives, and high-current load switches in industrial and telecom power systems. The part is also commonly used as a synchronous rectifier on the secondary side of 12V buck converters. Design consideration: at high continuous currents, an appropriately sized heatsink with thermal compound is required to keep junction temperature below 150 C for reliable long-term operation. The TO-220 tab is electrically tied to the drain, so insulating hardware (mica washer or silicone pad) is required when mounting to a grounded heatsink. This page synthesizes distributor pricing, drop-in alternatives, application notes, and parametric comparisons not found on a single manufacturer datasheet, giving engineers a one-stop reference for sourcing and validating the IRLB4132PBF in production designs.
IRLB8721 - 30V 62A 8.7mOhm MOSFET | Infineon
The Infineon IRLB8721 is a 30 V, 62 A N-channel power MOSFET with maximum RDS(on) of 8.7 mOhm and 65 W rated power dissipation, packaged in a through-hole TO-220AB package. It uses StrongIRFET technology and is optimized for 5 V gate-drive operation. A power MOSFET is a voltage-controlled semiconductor used as a low-resistance electronic switch. In the power-electronics hierarchy, this IRLB8721 belongs to the N-channel MOSFET, discrete-semiconductor, and power-switching categories. Its low drain-source resistance reduces conduction loss when switching current between a supply and load, while its tab and insulated package support conventional through-hole PCB mounting. The headline ratings are a 30 V maximum drain-source voltage, 62 A maximum drain current at the stated case condition, 8.7 mOhm maximum drain-source on-resistance, and 7.6 nC total gate charge. The device is specified for logic-level operation at 5 V, making it suitable for low-voltage DC motor, battery, load-switch, power-converter, and embedded-control switching stages. Its maximum gate-source voltage is listed as plus or minus 20 V in the supplied cross-reference data. The IRLB8721 uses a robust N-channel power-MOSFET structure and an industry-standard TO-220AB through-hole footprint. The verified product listing identifies StrongIRFET technology, while the manufacturer page identifies a 30 V maximum VDS, 8.7 mOhm maximum RDS(on), and 62 A maximum ID. The package is specified as TO-220, and distributor results identify the related IRLB8721PBF ordering code as TO-220AB. Typical applications include low-voltage DC motor control, battery-powered systems, synchronous rectifier positions, LED and load-switching circuits, and compact power-converter stages. In these applications, the 5 V gate-drive optimization can reduce gate-drive requirements, while the low RDS(on) helps minimize voltage drop and heat generation. Exact current capability still depends on PCB copper, thermal conditions, duty cycle, and the device's stated case-temperature rating. When designing around the IRLB8721, use the manufacturer datasheet for SOA, transient ratings, thermal resistance, and absolute maximum limits. Keep the gate drive within the verified limits, add a suitable gate resistor to control switching transients, and provide local source and drain copper paths. Because the target is a 30 V device, transient overshoot on a switching node must remain below its rated voltage. This page combines verified manufacturer and distributor facts, application guidance, and the supplied cross-reference information to support component selection.
IRLB8748PBF - 30V 92A N-Channel StrongIRFET MOSFET | Infineon
The Infineon IRLB8748PBF is a 30V, 92A single N-channel HEXFET power MOSFET in a TO-220AB through-hole package, built on Infineon's StrongIRFET technology platform for high-current, low-resistance switching. Key specifications include a maximum drain-source on-resistance of 4.8 mOhm at VGS=10V, continuous drain current of 92A at Tc (78A per datasheet variant listings), and maximum power dissipation of 75W. The device is optimized for 5V gate-drive (logic-level) operation, simplifying interface to 3.3V or 5V MCUs. A power MOSFET is a voltage-controlled semiconductor switch that enables efficient high-frequency switching of electrical loads, serving as the core building block of DC-DC converters, motor drives, and load management systems. MOSFETs sit within the broader hierarchy of discrete semiconductors -> transistors -> power transistors -> power MOSFETs, and are preferred over bipolar transistors when switching speed, drive simplicity, and conduction efficiency matter. Key features include a total gate charge of 15 nC typical, avalanche-rated ruggedness, and a maximum junction-to-ambient thermal resistance in the TO-220AB package. The StrongIRFET family trades slightly higher RDS(on) for substantially improved avalanche ruggedness and body-diode robustness, making this part ideal for applications with inductive loads and occasional transient stress. Architecturally, the IRLB8748PBF uses a planar N-channel HEXFET cell structure optimized for very low on-state loss at high currents. The combination of logic-level VGS(th) and low Qg enables direct drive from a microcontroller GPIO or low-side gate driver IC, eliminating the need for a dedicated bootstrap or charge-pump supply. Typical applications include high-current synchronous rectification in telecom and server DC-DC converters, UPS and inverter switching stages, motor drive H-bridges and half-bridges, and battery protection / load management in industrial power systems. The wide safe operating area also suits hot-swap and OR-ing applications. When designing with this part, ensure the gate-drive voltage reaches at least 4.5V at the gate pin and account for the body diode's reverse-recovery characteristics in bridge topologies. Use a low-impedance gate return path and adequate heatsinking to keep Tj below 150C at full load. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes not found in the manufacturer datasheet, providing engineering context beyond the raw spec table for TO-220-AB power-MOSFET selection.
IRLH5030TRPBF - 100V 13A N-Channel HEXFET MOSFET | Infineon
The Infineon IRLH5030TRPBF is a 100V, 13A N-channel HEXFET power MOSFET built on Infineon's IR MOSFET technology, housed in an industry-standard 8-PQFN (5mm x 6mm) surface-mount package. Key headline parameters include a maximum drain-to-source voltage (VDS) of 100V, a continuous drain current of 13A at TA (25C) or 100A at TC, an ultra-low on-resistance of 9 mOhm maximum at VGS = 10V, and a total gate charge of 44 nC. A HEXFET power MOSFET is a specific Infineon (formerly International Rectifier) device architecture that uses a hexagonal cell layout to maximize channel density and minimize on-state resistance per unit silicon area. Within the broader semiconductor taxonomy, the IRLH5030TRPBF is a power MOSFET, which is a subset of discrete transistors, which in turn sits within the discrete semiconductors family. This product type hierarchy - HEXFET -> power MOSFET -> discrete MOSFET -> discrete semiconductor - is critical for engineers searching by category and for AI knowledge-graph comprehension. The IRLH5030TRPBF features a low thermal resistance to PCB of 0.8 C/W, ≤100% Rg tested for predictable switching performance, a low profile (≤0.9 mm) suitable for space-constrained designs, and JEDEC-qualified reliability. It is optimized for 10V gate drive but is capable of 4.5V gate drive, providing logic-level flexibility. The SuperSO8 (5x6) PQFN package enables direct compatibility with industry-standard surface-mount and reflow processes. Architecturally, the device uses a planar N-channel enhancement-mode cell structure, with the source contact on the bottom of the die and the drain contact on top, allowing heat to flow directly into the PCB copper. The combination of low RDS(on) and the exposed pad package delivers high power density, making it suitable for secondary-side synchronous rectification, OR-ing, and high-current load switching where conduction losses dominate. Typical applications include secondary-side synchronous rectification in isolated DC-DC converters (where the low RDS(on) and fast body-diode recovery improve efficiency), high-side/low-side load switches in telecom and server power systems, OR-ing FETs in redundant power architectures, battery protection circuits in 48V and below systems, and motor drive H-bridges for industrial automation. When designing with this part, ensure the PCB copper pad provides adequate thermal dissipation (target θJA via the exposed thermal pad), keep the gate-drive loop area minimal to avoid ringing, and place a gate-source resistor of 10-100 Ohm close to the IC pin to suppress parasitic oscillations. The industry-standard pinout allows direct drop-in compatibility with competing PQFN 5x6 MOSFETs. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers with a single source for procurement and design-in decisions.
IRLHS6242TRPBF - 20V N-CH HEXFET MOSFET, 11.7mΩ | Infineon
The Infineon IRLHS6242TRPBF is a 20V single N-Channel HEXFET Power MOSFET optimized for low-voltage, high-frequency switching in an ultra-compact 6-pin PQFN 2mm x 2mm (DFN2020) package. It features a maximum on-resistance of 11.7 mΩ at VGS = 4.5V and a logic-level gate drive that can also be driven from 2.5V. The device is rated for 10A continuous drain current (Ta) and 12A continuous drain current (Tc), making it well-suited for power-dense DC/DC converters and battery-powered portable designs where PCB area is at a premium. A HEXFET power MOSFET is a specific Infineon/International Rectifier family of N-channel enhancement-mode MOSFETs built on a proprietary trench-gate silicon process that minimizes conduction losses and gate charge simultaneously. Within the broader semiconductor taxonomy, a HEXFET belongs to the power MOSFET class, which itself sits under discrete semiconductors and ultimately under power management. The IRLHS6242 specifically targets applications requiring the absolute smallest footprint with true logic-level drive, which historically forced designers into less efficient 8- or 6-ball BGA DFN parts from other vendors. Key features include a 14 nC total gate charge, ±12V VGS rating, and qualification to JEDEC standards for the broadest possible distribution-channel compatibility. The exposed pad (EP) on the underside of the PQFN package provides a low thermal-resistance path directly into the PCB copper pours, enabling 1.98W dissipation in free air and 9.6W with case-controlled cooling. This makes the device appropriate for compact synchronous buck converters, USB Type-C power path switches, and DC motor inverters under 12V. The device architecture pairs a small die with a high-performance leadframe and bottom-exposed thermal pad; combined with the low gate charge, this allows switching frequencies in the MHz range without excessive driver losses. The 2.5V-capable gate threshold unlocks direct drive from modern microcontrollers without a separate gate-driver IC, simplifying the BOM for low-voltage, low-power rails. Typical applications include battery charging and discharging switches, system load switches in mobile and wearable devices, low-voltage DC motor drivers, and high-frequency buck/boost converter synchronous rectifiers. According to the manufacturer description, the part is also designed for inverter stages below 20V. Designers should keep gate-drive traces short and provide adequate PCB copper under the exposed pad for thermal relief; for high-current loads, multiple thermal vias into an internal copper plane are recommended.
IRLL024NTRPBF - 55V 4.4A N-Channel HEXFET MOSFET | Infineon
The Infineon IRLL024NTRPBF is a single N-Channel HEXFET power MOSFET utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area, packaged in a surface-mount SOT-223 with an enlarged heat-sinking tab. Key parameters are V(BR)DSS = 55 V, continuous drain current ID = 3.1 A (Ta) / 4.4 A pulsed, and R-DS(on) = 0.065 ohm, with a logic-level gate threshold enabling direct drive from 5 V or 3.3 V microcontrollers. A HEXFET power MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) optimized by International Rectifier (now part of Infineon) using a hexagonal cell layout that maximizes channel density per unit area. MOSFETs are voltage-controlled switches belonging to the broader class of discrete semiconductors and the power MOSFET family; they sit hierarchically under transistors, discrete semiconductors, and finally active electronic components. In any power-conversion or load-switching design, the MOSFET functions as the key switching element between a controller IC and the actual load. This device's advanced process technology delivers ultra-low on-resistance, fast switching speed, and a ruggedized device design that operates reliably up to 175 degrees C junction temperature. The SOT-223 footprint is fully surface-mount compatible with vapor-phase, infrared, or wave soldering and provides roughly 1 W of power dissipation in a typical surface-mount land pattern, while still permitting up to about 4.4 A pulsed drain current thanks to the enlarged tab acting as a heat sink. The IRLL024NTRPBF architecture is built around Infineon's standard HEXFET planar stripe-cell process combined with a logic-level gate oxide that guarantees full enhancement at V-GS = 4.5 V. This makes the part exceptionally well suited to direct microcontroller GPIO drive without requiring a gate-driver IC or charge pump, while still preserving the ruggedness and avalanche energy rating expected of a 55 V industrial-grade MOSFET. Typical applications include automotive electronic fuel injection, active suspension, power doors/windows/seats, cruise control, airbag modules, dc-dc converters, and relay/load replacements in 12 V and 24 V systems. The logic-level gate also makes the part attractive as a low-side switch for battery management, LED drivers, and small motor control in compact PCB designs. When designing with the IRLL024NTRPBF, observe that continuous current is thermally limited - derate to about 0.6 A at 100 degrees C and verify that the SOT-223 tab is soldered to a copper pour of at least 1 square inch to stay below the 1 W dissipation envelope. The logic-level gate allows direct MCU drive, but adding a small gate-source resistor (10-100 ohm) is recommended to suppress ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical thermal and PCB design notes not found in the manufacturer datasheet, providing a single engineering reference for sourcing and qualifying the IRLL024NTRPBF.
IRLL024ZTRPBF - 55V 5A 60mΩ N-Ch MOSFET SOT-223 | Infineon
The Infineon IRLL024ZTRPBF is a logic-level N-channel HEXFET power MOSFET rated 55 V VDS and 5 A continuous ID, housed in a surface-mount SOT-223 package and supplied on Tape & Reel. Per the Infineon product page, the part delivers a maximum on-resistance of 60 mΩ at 10 V VGS and a typical Qg of 7 nC, making it a strong fit for low-voltage DC load switching and small synchronous buck converter low-side positions. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (in this case, an N-channel enhancement-mode structure) to modulate current flow between drain and source. HEXFET is a trench-gate technology from International Rectifier (now Infineon) that places the gate electrode inside vertical trenches, dramatically lowering RDS(on) per unit silicon area. Within the broader taxonomy, this part sits at: HEXFET power MOSFET -> power MOSFET -> discrete semiconductor -> power management component. Key features of the IRLL024ZTRPBF include a logic-level gate drive threshold that allows direct control from 3.3 V or 5 V microcontroller GPIO pins, an operating junction temperature up to 150 °C, fast switching speed, and an improved repetitive avalanche rating. The SOT-223 (TO-261-4) footprint offers three active pins (Gate, Drain, Source) plus a large tab lead that doubles as the drain connection and a thermal pad. Per distributor listings, continuous power dissipation is 1 W at TA=25 °C with the tab soldered to a minimum 1 square-inch copper pour. Technically, the device uses Infineon's latest-generation HEXFET process that combines extremely low on-resistance per silicon area with optimized gate charge (typical Qg = 7 nC), allowing fast turn-on/turn-off transitions at moderate switching frequencies. The logic-level VGS(th) eliminates the need for a gate-driver IC when driven directly from MCU I/O. Typical applications include DC load switching in industrial 24 V systems, low-side switches in synchronous buck converters, motor and solenoid drivers up to 5 A, battery protection circuits in 1S-3S Li-ion packs, and replacement of relays with solid-state switches. The wide VDS rating also makes it useful for hot-swap controllers in 12 V and 24 V backplanes. When designing with the IRLL024ZTRPBF, ensure the tab/lead 4 thermal pad is soldered to at least 1 square inch of copper area on the PCB. Switching inductive loads such as solenoids or motors requires a flyback diode across the load. Verify that the upstream gate signal can both source and sink at least 1 µA to charge and discharge the gate capacitance. This page synthesizes distributor pricing, drop-in alternatives sourced from Infineon's SOT-223 N-channel MOSFET family, and practical PCB-layout and thermal notes not found in the manufacturer datasheet alone.
IRLL2705TRPBF - 55V N-Channel HEXFET MOSFET | Infineon
The Infineon IRLL2705TRPBF is a fifth-generation HEXFET N-channel power MOSFET rated at 55 V VDS, 3.8 A continuous drain current (Ta) and 5.2 A peak ID, housed in a surface-mount SOT-223 package with logic-level gate drive. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to efficiently switch or amplify electrical signals in power conversion circuits. Within the broader semiconductor taxonomy, MOSFETs fall under discrete semiconductors -> transistors -> FETs -> power MOSFETs, and serve as the primary switching element in DC-DC converters, motor drivers, load switches, and battery protection circuits. The IRLL2705TRPBF belongs to Infineon's HEXFET family, which uses advanced process technology to minimize RDS(on) per unit silicon area. Key specifications include a maximum drain-to-source voltage of 55 V, continuous drain current of 3.8 A at 25 deg C ambient, peak pulsed current up to 5.2 A, ultra-low RDS(on) of 40 mOhm at VGS=10 V, and a total gate charge of 32 nC. The logic-level gate drive allows direct interfacing with 5 V microcontrollers and 3.3 V logic without requiring a gate driver stage, simplifying circuit design and reducing BOM cost. The HEXFET fifth-generation architecture combines advanced processing techniques with a ruggedized device design, achieving extremely low on-resistance per silicon area while maintaining fast switching speed. Built-in dynamic dv/dt rating improves reliability in switching-mode power supply circuits, and the device supports ease of paralleling for higher current applications. The SOT-223 package offers a balance between compact size and thermal dissipation, with a center tab that can be soldered to the PCB copper pour for improved heat spreading. Typical applications for the IRLL2705TRPBF include DC-DC buck and boost converters, low-voltage motor control circuits, battery protection and load switching in portable electronics, LED drivers, and relay/solenoid replacement circuits. The logic-level gate drive makes it particularly attractive for direct microcontroller control in IoT and battery-powered designs where auxiliary gate-driver ICs would be undesirable. When designing with this part, ensure the gate-source voltage remains within the rated VGS limits and that adequate thermal management is provided through PCB copper area. The SOT-223 center tab should be soldered to a sufficient copper pour for heat dissipation. Compared to a DPAK-packaged alternative, the SOT-223 footprint saves board space but offers lower continuous current capability. This page synthesizes distributor pricing, SOT-223 drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing actionable information for both component selection and PCB layout planning.
IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon
The Infineon IRLML0030TRPBF is a 30 V N-channel HEXFET power MOSFET housed in a Micro3 / SOT-23 surface-mount package, rated for 5.3 A continuous drain current and 27 mOhm maximum on-resistance. Optimized for 5 V gate-drive (logic-level) operation, it is built on Infineon's IR MOSFET process and delivers low gate charge (3.6 nC typical) for high-frequency switching. What is a logic-level N-channel MOSFET? It is a discrete semiconductor switch whose gate threshold is designed low enough (typically below 2.5 V) to be driven directly from low-voltage logic outputs (3.3 V or 5 V microcontrollers, gate drivers) without a separate charge pump. MOSFETs sit in the hierarchy: power MOSFET -> discrete semiconductor -> active component. Logic-level parts eliminate the level-shift stage that older 10 V-threshold parts required, simplifying design and shrinking PCB area. Key features include a 1.3 W power dissipation rating on the standard FR-4 board, industry-standard Micro3/SOT-23 footprint for multi-vendor compatibility, JEDEC-qualified process, and optimized switching loss. The exposed lead frame on the Micro3 package provides moderate thermal performance for its size, sufficient for load-switch and DC-DC tasks where continuous current stays below ~2 A. Per the Infineon datasheet, the part is qualified for wave-solder profiles. Typical applications include DC-DC buck converter synchronous rectifier stages, battery protection / load switch circuits in portable electronics, low-voltage motor and solenoid drivers, and LED driver high-side switches. The 27 mOhm RDS(on) at 4.5 V VGS keeps conduction loss low in 5 V rails, while the small Qg of 3.6 nC enables switching frequencies above 1 MHz for compact point-of-load converters. When designing with this part, derate continuous current by at least 30% relative to the 5.3 A Ta rating because PCB copper area dominates thermal performance in SOT-23 layouts. Keep the gate-drive trace short and add a gate-source resistor (10-100 kOhm) to prevent unwanted turn-on from dv/dt coupling. This page synthesizes Infineon datasheet parameters, distributor pricing tiers, drop-in alternatives in the same Micro3 footprint, and practical layout notes not consolidated in the original datasheet, delivering an at-a-glance engineering brief for new designs.
IRLML0040TRPBF - 40V N-Ch MOSFET, 56mOhm, 3.6A | Infineon
The Infineon IRLML0040TRPBF is an N-channel power MOSFET rated at 40V VDS, 3.6A continuous drain current (Ta), and a maximum on-resistance of 56 mOhm at VGS=10V, housed in a Micro3 (SOT-23) surface-mount package. As part of Infineon's IR MOSFET family, it uses a planar HEXFET die with a low 2.6 nC total gate charge, enabling fast switching in low-voltage DC-DC and load-switch applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching element used to route or regulate power in electronic circuits. It belongs to the discrete-semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor. Within Infineon's portfolio, the IR MOSFET family targets logic-level, low-RDS(on) switching where the gate can be driven directly from a microcontroller or a low-voltage gate driver without a charge pump. Key specifications include a maximum drain-to-source voltage of 40V, continuous drain current of 3.6A at TA=25C (power dissipation 1.3W), pulsed drain current capability up to 14A, and an operating junction temperature range of -55C to +150C. The device is qualified to the Consumer level per JEDEC JSD47F, MSL1 per IPC/JEDEC J-STD-020D, and is RoHS compliant containing no lead, bromide, or halogen. The IRLML0040TRPBF leverages Infineon's mature HEXFET process, which combines a vertical DMOS cell structure with optimized gate charge for low switching losses. The 56 mOhm RDS(on) at 10V VGS and 2.6 nC Qg place this part in the 'low-side switch / small buck converter' category - it is suitable for synchronous-rectifier positions where footprint and Qg are more critical than absolute lowest RDS(on). Typical applications include DC-DC converter synchronous rectifiers, load switches in battery-powered portable devices, USB power-path management, LED driver low-side switches, and small motor / solenoid drivers in consumer electronics. Its 40V rating also provides sufficient headroom for 12V automotive subsystems and 19V notebook adapter rails. When designing with this part, ensure VGS reaches the full enhancement voltage (10V typical for the rated RDS(on)) to minimize conduction loss. A gate-source pull-down resistor of 10 kOhm is recommended to keep the device off during MCU reset, and the exposed tab of the Micro3 package should be tied to source to maximize copper dissipation. This page synthesizes distributor stock data, parametric drop-in alternatives, and practical PCB-layout guidance beyond what the manufacturer datasheet alone provides, including cross-brand equivalents and detailed thermal considerations for the Micro3 footprint.
IRLML2030TRPBF - 30V N-Ch HEXFET MOSFET, 2.7A | Infineon
The Infineon IRLML2030TRPBF is a 30 V single N-channel HEXFET power MOSFET in a Micro3 (SOT-23) surface-mount package, rated for 2.7 A continuous drain current (Ta) and 1.3 W power dissipation. It uses Infineon's IR MOSFET technology, optimized for 5 V gate-drive (logic-level) operation with a maximum on-resistance of 100 mOhm at VGS = 10 V and 154 mOhm at VGS = 4.5 V. The device is qualified to JEDEC standards, lead-free, halogen-free, RoHS compliant, and MSL 1. A HEXFET power MOSFET is a single-chip N-channel enhancement-mode field-effect transistor that uses a hexagonal cell layout to minimize on-resistance per unit silicon area. In the power-management taxonomy, this device sits within discrete semiconductors -> MOSFETs -> N-channel enhancement MOSFETs -> logic-level MOSFETs, serving as the lowest-cost, smallest-footprint switching element for sub-3 A loads. The Micro3 (SOT-23) package is the de-facto industry standard for portable and handheld switching applications. Key features of the IRLML2030TRPBF include an industry-standard Micro3 (SOT-23) pinout that is multi-vendor compatible, a maximum drain-source voltage of 30 V, a maximum gate-source voltage of ±20 V, and a low typical gate charge of 1.0 nC. Logic-level VGS(th) (typically 1.0-2.5 V) makes the part directly drivable from 3.3 V and 5 V microcontrollers, eliminating the need for a separate gate-driver IC. Wave-solder compatibility simplifies PCB assembly. Internally, the device uses Infineon's planar HEXFET cell architecture with a vertical DMOS structure. Compared with lateral MOSFETs in similar packages, the HEXFET structure achieves lower RDS(on) at a given die size. The 1.0 nC total gate charge keeps driver-side switching losses small at low PWM frequencies (<1 MHz), which is the typical operating regime for battery and load-switch applications. Avalanche-rated and JEDEC-qualified for industrial temperature ranges. Typical applications include battery protection in single-cell Li-ion packs, load switching in portable electronics, DC-DC converter low-side switches, USB power-path management, and small motor or solenoid drivers. The 30 V rating comfortably handles 12 V bus rails with substantial transient headroom. When designing with the IRLML2030TRPBF, place a gate-source resistor (10 kOhm typical) to prevent floating-Gate turn-on during hot-plug events. A TVS diode on VDS is recommended if the load is inductive. Thermal management at 1.3 W in SOT-23 requires attention to copper-pour area on the drain tab. This page synthesizes Infineon datasheet parameters, distributor pricing as of 2026-09-11, drop-in SOT-23 alternatives from verified cross-reference data, and SOT-23 PCB design notes not aggregated on any single vendor page.
IRLML2060TRPBF - 60V N-Ch MOSFET, 1.2A, SOT-23 | Infineon
The Infineon IRLML2060TRPBF is a 60 V N-channel HEXFET power MOSFET rated at 1.2 A continuous drain current in a Micro3/SOT-23 surface-mount package, delivering 480 mOhm maximum on-resistance at VGS=10 V. The device uses Infineon's IR MOSFET technology platform, which integrates a logic-level gate drive and a low R_DS(on) cell structure into the industry-standard SOT-23 footprint, enabling direct drop-in replacement of legacy 2N7002-class devices with a 5-10x lower on-resistance. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage creates an inversion layer that conducts electrons between the source and drain terminals. Within the broader taxonomy, the IRLML2060 sits in the small-signal power MOSFET category, which bridges discrete transistors and high-current power MOSFETs. It is commonly used as a load switch, level shifter, or low-side gate driver in space-constrained designs. Key specifications include VDS maximum of 60 V, VGS range of +/- 12 V (logic-level VGS(th) ~1.8 V), continuous ID of 1.2 A at TA=25C, pulsed ID of 4.8 A, and a maximum power dissipation of 1.25 W on a standard 1 oz copper FR-4 PCB. The SOT-23 (Micro3) footprint conforms to JEDEC TO-236AB and is compatible with industry-standard surface-mount assembly lines. Typical R_DS(on) of 480 mOhm at VGS=10 V and 650 mOhm at VGS=4.5 V provides flexibility across 5 V and 3.3 V logic rails. The IRLML2060 uses Infineon's IR HEXFET technology, which combines a trench-gate cell structure with optimized body diode characteristics for low reverse recovery charge (Qrr). This makes the part well suited to high-frequency PWM applications and synchronous rectification in small DC-DC converters up to several hundred kHz. The device is rated for lead-free reflow soldering per IPC/JEDEC J-STD-020 and carries MSL1 moisture sensitivity. Typical applications include battery protection circuits in portable electronics, USB load switches, level shifters between 1.8 V MCUs and 5 V peripherals, DC-DC converter synchronous rectifiers, LED backlight drivers, and power-rail hot-swap switches. The 60 V VDS rating provides ample margin for 12 V and 24 V industrial rail switching. When designing with this part, observe the thermal resistance of 100 C/W (junction-to-ambient on a 1 in^2 copper pad) and ensure peak drain current stays below the pulsed rating. A gate resistor of 10-100 ohm is recommended to control ringing on the gate node, and a 100 kohm gate-source pull-down keeps the MOSFET off during MCU reset events. This page synthesizes distributor pricing, drop-in SOT-23 alternatives, and practical PCB layout notes not collected in any single source.
IRLML2803TRPBF - 30V N-Ch MOSFET, 1.2A, SOT-23 | Infineon
The Infineon IRLML2803TRPBF is a 30V N-Channel logic-level power MOSFET housed in a Micro3 / SOT-23 surface-mount package, delivering 1.2A continuous drain current at 25°C and a maximum on-resistance of 250 mΩ at VGS=4.5V. Built on Infineon's proprietary IR MOSFET Generation V technology, it is optimized for low-voltage, high-frequency switching applications where compact PCB footprints and logic-level gate drive are required. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to amplify or switch electronic signals. N-Channel MOSFETs conduct when a positive voltage is applied to the gate relative to the source, making them the dominant choice for low-side switching in power management, motor control, and load switching. The IRLML2803TRPBF belongs to the logic-level gate-drive subcategory, allowing direct drive from 3.3V or 5V microcontrollers without a gate-driver stage, which simplifies BOM and saves PCB area. Its position in the broader taxonomy is: power MOSFET -> discrete semiconductor -> transistor -> semiconductor. Key features include a gate threshold voltage around 1V, ultra-low on-resistance of 250 mΩ at VGS=4.5V, low gate charge of 3.3 nC typical, fast switching speeds, and 540 mW maximum power dissipation. The Generation V IR MOSFET technology delivers a Figure of Merit (RDS(on) × Qg) that competes favorably with later-generation devices, and the device is rated for continuous operation up to 1.2A at the SOT-23 copper pad's typical thermal conditions. Typical applications include DC-DC converter synchronous rectification, low-side load switching, battery protection circuits, USB power switches, motor driver bridges, and power-rail ORing. Its 1.2A current rating comfortably drives small brushed DC motors, solenoids, and LED driver strings in portable equipment, while the SOT-23 footprint suits space-constrained designs such as wearables, IoT nodes, and handheld instruments. When designing with this device, observe the maximum power dissipation of 540 mW and provide adequate copper land area under the drain tab. Use a gate resistor of 10Ω to 100Ω to limit ringing, and keep the gate drive slew rate within the datasheet SOA. For new designs above 2A or requiring lower RDS(on), consider Generation VII or later devices such as IRLML0030 / IRLML2030, which share the same SOT-23 pinout and offer superior switching performance. This page consolidates distributor pricing, drop-in alternatives, pin-level guidance, and design notes that go beyond a single datasheet — giving procurement and engineering teams a single source of truth for the IRLML2803TRPBF.
IRLML5103TRPBF - 30V 760mA P-Channel MOSFET | Infineon
Infineon IRLML5103TRPBF is a P-channel power MOSFET rated for a maximum drain-source voltage of 30 V, a continuous drain current of 760 mA at the specified case condition, and power dissipation of 540 mW at the specified ambient condition. The part is supplied in the Micro3/SOT-23 surface-mount package, making it suitable for compact low-voltage switching and load-management circuits. Its P-channel polarity supports high-side switching when the source is connected toward the positive supply, allowing a simple gate-drive arrangement for many load-control applications. A P-channel MOSFET is a voltage-controlled majority-carrier device in which a negative gate-source voltage creates the conducting channel. It belongs to the power MOSFET hierarchy and is commonly used as a low-side or high-side switch, a load-disconnect device, or a reverse-polarity protection element. In a high-side configuration, the P-channel device can hold a load off or on with a relatively small gate-drive swing, but the gate voltage must be controlled carefully to avoid exceeding the device's gate rating. The verified specifications identify a maximum on-resistance of 600 mOhm and a gate charge of 3.4 nC according to the Mouser listing. The part is described as a P-channel 30 V, 760 mA device in a SOT-23 footprint. The Micro3/SOT-23 package is important for applications where board area is constrained, but its thermal capability must be considered when continuous dissipation approaches 540 mW. The device is also described as RoHS compliant in the supplied search data. IRLML5103TRPBF is based on IR MOSFET technology, and the supplied product-page information identifies a P-channel device with a maximum VDS of -30 V and maximum RDS(on) of 600 mOhm. Its low on-resistance can reduce conduction loss compared with a higher-resistance small-signal MOSFET, while the P-channel arrangement can simplify high-side load switching. The exact threshold voltage, safe operating area, transient current capability, and recommended gate-drive conditions are not included in the supplied verified data and therefore require datasheet review before final design release. Typical applications include battery-powered equipment, portable-device power management, load switching, power-path control, and protection or isolation circuits. The 30 V rating provides useful margin for common low-voltage rails, while the 760 mA rating makes the part appropriate for modest loads rather than high-current power conversion. A compact SOT-23 footprint supports space-constrained designs, but thermal performance, copper area, switching frequency, and gate-drive impedance remain important system-level considerations. When designing with IRLML5103TRPBF, confirm the actual load current, ambient temperature, gate-source voltage, and transient conditions against the manufacturer datasheet. Use a gate resistor and appropriate gate clamping or pulldown strategy where required, and calculate conduction loss from I²R using the verified 600 mOhm maximum on-resistance. Do not substitute a larger package or a different pinout without redesigning the PCB. This product page combines verified distributor specifications, the official Infineon datasheet link, package and pinout information, practical switching considerations, and same-package comparison guidance. It is intended to help engineers select the IRLML5103TRPBF while clearly separating verified values from parameters that still require datasheet confirmation.
IRLML6246TRPBF - 20V N-Channel HEXFET MOSFET | Infineon
The Infineon IRLML6246TRPBF is a 20V single N-channel HEXFET power MOSFET housed in an industry-standard Micro3/SOT-23 surface-mount package. It is rated for a continuous drain current of 4.1A (Ta) and a maximum power dissipation of 1.3W (Ta). According to the Infineon datasheet, the part uses the company's proprietary IR MOSFET silicon technology, achieving a typical on-resistance of 46 mOhm at VGS=4.5V and an ultra-low gate threshold suited to direct logic-level drive from 1.8V to 5V microcontrollers and battery-powered rails. The package footprint is the JEDEC-standard SOT-23 (also marketed as Micro3), making it pin-compatible with a broad cross-section of competitor parts. A power MOSFET is a voltage-controlled three-terminal semiconductor switch used to commutate current between drain and source under the control of a gate signal. Within the broader taxonomy, the IRLML6246 sits in the low-voltage (<=30V) logic-level N-channel enhancement-mode category, descended from power MOSFET -> discrete semiconductor -> transistor. Logic-level N-channel MOSFETs are particularly important in portable, battery, and USB-powered designs because they can be driven directly from low-voltage GPIO without a charge pump or gate driver. The IRLML6246 family is part of Infineon's HEXFET Power MOSFET portfolio, an industry-standard benchmark for efficiency and thermal performance in micro-packages. Key differentiating features include the 4.1A continuous drain current, 46 mOhm typical on-resistance, logic-level VGS(th) around 1.1V, and the industry-standard SOT-23 footprint. The part is halogen-free and fully RoHS compliant. The combination of a small SOT-23 outline, low Rds(on), and true logic-level drive enables designers to shrink load-switch, power-rail, and DC-DC synchronous-rectifier circuits that previously required a larger SO-8 or DPAK device. The device uses Infineon's IR MOSFET planar cell architecture, with the gate oxide and source metallization tuned for low gate charge (Qg) and fast switching transitions. This reduces both conduction and switching losses, which is critical in high-frequency synchronous rectification in buck converters and in PWM load-switch topologies where dead-time losses dominate. The SOT-23 package's exposed lead frame also helps wick heat into the PCB copper. Typical applications include load switching in smartphones and wearables, USB VBUS power distribution, battery protection / charging FETs in single-cell Li-ion packs, high-side load drivers in IoT sensor nodes, and synchronous-rectifier low-side FETs in tiny point-of-load buck converters. The logic-level gate makes the IRLML6246 a drop-in choice when 3.3V or 1.8V MCUs must directly drive a switch without a level shifter. When laying out the PCB, place the source tab land pattern to maximize copper pour and minimize thermal resistance; the SOT-23 dissipates only 1.3W at Ta=25C with the standard JEDEC footprint, so a 0.5 sq-inch copper pad is recommended at full load. Always observe the SOA at high currents, especially during inrush on highly capacitive loads such as USB VBUS hot-plug events. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the bare manufacturer datasheet, including cross-brand same-package equivalents and SOA-aware design guidance.
IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon
Infineon IRLML6346TRPBF is a 30V, 3.4A N-channel HEXFET power MOSFET housed in a compact Micro3 / SOT-23 surface-mount package. It combines an ultra-low on-resistance of 63 mOhm maximum at VGS=2.5V with a logic-level 2.5V drive capability, enabling direct interfacing with microcontrollers, low-voltage ASICs, and battery-powered digital logic. The part is supplied on tape-and-reel packaging, with the TRPBF suffix indicating Pb-free terminal finish. An N-channel enhancement-mode MOSFET is a three-terminal voltage-controlled switch in which a positive gate-to-source voltage creates an inversion layer that conducts current between drain and source. N-channel MOSFETs belong to the broader class of field-effect transistors (FETs) within discrete semiconductors, sitting beneath the hierarchy of power semiconductors, transistors, and ultimately semiconductor devices. Compared to P-shading equivalents, N-channel parts typically offer lower RDS(on) per unit silicon area, which is why they dominate low-voltage load-switch and power-ORing applications. Within the MOSFET taxonomy, the IRLML6346 sits in the low-voltage logic-level sub-30V segment optimised for battery and USB-rail switching. Key differentiating features of the IRLML6346TRPBF include 30V VDS maximum rating, 3.4A continuous drain current at TA=25C, 63 mOhm maximum RDS(on) at VGS=2.5V, and a 1.3W maximum power dissipation rating on a 1-inch square FR4 board. Its HEXFET power-MOSFET process technology is engineered for low gate charge and fast switching, making it well suited to high-frequency DC-DC converter synchronous-rectifier slots where dead‑second losses matter. The logic-level gate threshold also eliminates the need for a gate-driver IC in many 3.3V and 5V systems. Architecturally, the device uses Infineon's seventh-generation HEXFET die, integrating a planar cell structure with low-resistance source metallization. This produces low conduction loss at sub-1A loads and acceptable switching loss at 1-3A pulsed conditions. The device is rated for operation from -55C to +150C junction temperature, supporting industrial as well as consumer thermal envelopes. Typical applications for the IRLML6346TRPBF include battery protection and load switching in portable electronics, USB power-path management, DC-DC converter synchronous rectification, power-ORing circuits for redundant supplies, and small motor/relay drivers. The SOT-23 footprint also makes it suitable for high-density point-of-load regulators and discrete fan controllers where board area is constrained. When designing with this part, calculate worst-case power dissipation using P = I^2 x RDS(on) and verify that the resulting junction temperature rise stays below the 150C maximum. Use a gate series resistor of 10-100 Ohm to damp ringing, and place the device close to the controller to minimise gate-loop inductance. This page synthesizes Infineon datasheet specifications, real-time distributor pricing, drop-in SOT-23 alternatives, and practical thermal / PCB design guidance not found in the datasheet alone.
IRLML6401TRPBF - -12V P-Ch 4.3A HEXFET MOSFET | Infineon
The Infineon IRLML6401TRPBF is a single P-Channel HEXFET power MOSFET rated -12 V VDS and 4.3 A continuous drain current (Ta) in a Micro3 / SOT-23 surface-mount package. It is part of Infineon's HEXFET power MOSFET family and ships on a 7-inch tape-and-reel format. According to the Infineon datasheet, the part achieves a maximum on-resistance of 50 mOhm at VGS = -4.5 V and offers logic-level gate drive compatibility, making it usable directly from 1.8 V / 3.3 V microcontrollers. A P-Channel MOSFET is a majority-carrier field-effect transistor in which the conducting channel is formed by holes rather than electrons. P-Channel devices simplify high-side switching because the source sits at the load supply rail and the MOSFET is turned on by pulling the gate below the source, eliminating the need for a charge pump or bootstrap circuit. P-Channel MOSFETs belong to the power MOSFET family within the broader discrete semiconductor category and are widely used for low-voltage load management, battery protection, and reverse-polarity protection. The IRLML6401TRPBF key feature set includes: -12 V VDS, -4.3 A continuous ID at TA = 25 C, 50 mOhm maximum RDS(on) at VGS = -4.5 V, logic-level VGS(th) of typically -0.7 V to -1.5 V, 1.3 W power dissipation at TA = 25 C, fast switching, and ruggedized HEXFET construction. The extremely low on-resistance per silicon area gives high efficiency in small-outline designs where PCB copper is limited. Internally the device uses Infineon's advanced planar HEXFET process technology, which combines a vertical DMOS structure with a P-Channel body region to achieve low figure-of-merit RDS(on) x Qg. The SOT-23 footprint is industry-standard 3-lead with the drain, source and gate assignments on pins 1, 2, 3 respectively, allowing pin-compatible drop-in substitution by several competitors. The exposed lead frame aids thermal conduction to PCB copper. Typical applications include: load switching in portable electronics, battery management and protection, USB power rail control, power-ORing and reverse-polarity protection, DC-DC converter high-side switches, and LED backlight drivers. The logic-level gate drive is the key enabler for direct microcontroller I/O control in 1.8 V / 3.3 V systems. When designing with this device, ensure that peak drain current stays below the SOA curve and that total gate charge is sourced within the driver's capability. Always confirm VGS drive polarity: this part requires negative VGS to turn on, which differs from N-Channel parts - this is the most common design pitfall. This page synthesizes Infineon datasheet specifications, parametric comparison with pin-compatible P-Channel SOT-23 MOSFETs from competing vendors, and practical design notes that go beyond the data sheet's typical application section.
IRLR024NTRLPBF - 55V 17A N-Ch HEXFET MOSFET DPAK | Infineon
The Infineon IRLR024NTRLPBF is a 55 V, 17 A N-channel HEXFET power MOSFET in a surface-mount TO-252AA (DPAK) package, designed as the logic-level-gate-drive member of the IRLR024N family. It features a maximum drain-source on-resistance of 65 mΩ at VGS = 10 V and a typical gate charge of 10 nC, enabling fast switching with low drive losses. The fully avalanche-rated silicon and advanced process technology deliver the lowest on-resistance per silicon area in its class, making it well suited to medium-power DC-DC conversion, motor drive, and load-switching tasks. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically an oxide layer) to modulate conduction between its drain and source terminals. Within the broader taxonomy, this part is a discrete N-channel enhancement-mode MOSFET, a subset of power transistors, which in turn sit under the wider discrete-semiconductor and power-management categories. The 'N-channel' designation means conduction occurs via electrons, which yield roughly three times higher mobility than the holes in P-channel devices; the result is lower on-resistance per unit silicon area and faster switching. The 'HEXFET' label refers to Infineon's (originally International Rectifier's) proprietary cellular MOSFET architecture that subdivides the die into thousands of parallel cells to minimise R DS(on) while maintaining rugged avalanche capability. Key features include a logic-level gate-threshold specification that allows direct drive from 3.3 V or 5 V microcontrollers and gate drivers, 17 A continuous drain current at 25 °C case temperature, 45 W maximum power dissipation, and fast switching speeds. The device is supplied in 3-pin (2 + tab) DPAK surface-mount packaging with tape-and-reel orientation to the left (TRL suffix). It is fully RoHS-compliant, lead-free, and rated for industrial temperature operation. The IRLR024N's combination of 55 V breakdown voltage and 17 A current capability places it in the medium-power segment, ideal for applications below approximately 30 V bus rails. The logic-level gate-drive capability simplifies interfacing to digital controllers without bootstrap or charge-pump circuitry, and the avalanche rating provides robust transient handling for inductive loads. Compared with the legacy IRLR024 (60 V, 14 A, non-logic-level), the 'N' suffix denotes the newer generation with lower R DS(on) and logic-level gate threshold. Typical applications include DC-DC converter synchronous rectifiers, low-voltage motor drivers for fans and small pumps, solenoid and valve drivers, battery protection circuits in 12 V systems, and high-side load switches in industrial automation. The DPAK footprint is widely accepted in power supply designs where moderate thermal performance is acceptable and through-hole mounting is not required. When designing with the IRLR024NTRLPBF, ensure adequate copper area on the PCB tab and drain pad to dissipate heat. Use a gate resistor in the 10 Ω to 100 Ω range to control switching transients, and place a 10 kΩ pull-down on the gate to prevent inadvertent turn-on during supply ramp-up. Verify that peak drain current stays within the SOA across the entire operating temperature range. This page consolidates distributor pricing, same-brand and cross-brand drop-in alternatives, application guidance, and design notes drawn from publicly available manufacturer documentation and distributor listings, providing an at-a-glance engineering reference that complements the official Infineon datasheet.