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IRLR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon
The Infineon IRLR024NTRPBF is a 55 V, 17 A single N-channel HEXFET power MOSFET in a surface-mount TO-252AA (DPAK) package, designed for efficient low-voltage power switching. Built on Infineon's Advanced Process Technology, it delivers a maximum on-resistance of 65 mOhm at VGS=10 V with logic-level gate drive capability, and a continuous drain current of 17 A at 25 C case temperature. The device is rated for 45 W power dissipation at Tc, fully avalanche rated, and supports fast switching for high-frequency power conversion topologies. The TO-252AA (DPAK) footprint provides a compact surface-mount form factor with an exposed drain tab that doubles as a thermal pad, simplifying PCB heatsinking. An N-channel HEXFET MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) is a voltage-controlled three-terminal switch in which the gate voltage modulates a conductive channel between drain and source. Logic-level MOSFETs are specifically designed to fully enhance at VGS values of 4.5 V or lower, allowing direct drive from 3.3 V or 5 V microcontrollers without bootstrap or gate-driver stages. HEXFET refers to Infineon's (formerly International Rectifier) trademarked hexagonal cell layout that reduces on-resistance per unit silicon area. Within the broader taxonomy, this part belongs to the power MOSFET > discrete semiconductor > power management ecosystem. Key features include a low 65 mOhm Rds(on) for reduced conduction loss, a 10 nC typical total gate charge for fast switching transitions, a 55 V drain-to-source breakdown voltage with avalanche energy rating, and 100% lead-free construction. The logic-level gate threshold (1.0 V to 2.0 V typical) ensures full turn-on from 5 V MCU logic, while the fully-isolated DPAK tab eliminates the need for additional insulating hardware during PCB mounting. Internally, the device uses a vertical DMOS structure with a hex-cell layout that minimizes cell pitch and maximizes channel density. The low gate charge (Qg) of 10 nC enables operation at switching frequencies above 500 kHz with manageable driver losses. The combination of low Rds(on) and low Qg yields an excellent figure-of-merit (FOM = Rds(on) × Qg) suitable for both hard-switched and soft-switched converter stages. Typical applications include DC motor drive and H-bridge circuits, low-voltage synchronous rectification in switched-mode power supplies (SMPS), solenoid and relay drivers, battery protection circuits in 12 V lead-acid and multi-cell Li-ion packs, and general-purpose load switching in industrial automation and consumer appliances. When designing with this MOSFET, observe safe operating area (SOA) limits during inductive switching, add a TVS or RC snubber across drain-source for avalanche protection, and ensure the gate driver can source/sink the 10 nC Qg within the required rise/fall time. Thermal management must account for the 45 W Tc rating and the package's RthJA of approximately 50 C/W on a 1 oz copper 1 in² pad.
IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon
The Infineon IRLR120NTRPBF is a fifth-generation HEXFET N-channel power MOSFET rated at 100 V drain-source voltage and 10 A continuous drain current (Tc), with a maximum on-resistance of 185 mΩ and a total gate charge of 13.3 nC, packaged in a surface-mount TO-252AA (DPAK) outline with 48 W (Tc) power dissipation. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate conduction between drain and source terminals. N-channel MOSFETs are the dominant choice for low-side switching and buck topologies because their lower on-resistance per silicon area translates directly into lower conduction loss and higher efficiency. The HEXFET family sits within the broader power MOSFET taxonomy (planar N-channel -> trench N-channel -> super-junction), and the TO-252 (DPAK) package family is the de-facto standard for sub-50 W surface-mount switching designs. Key features of the IRLR120NTRPBF include a logic-level-compatible gate threshold (fully enhanced at VGS = 5 V), 185 mΩ maximum Rds(on) at VGS = 10 V, fully avalanche-rated energy, fast switching speed, lead-free and RoHS-compliant termination, and a straight-lead surface-mount body. The DPAK tab doubles as the drain terminal, providing a low thermal resistance path (~50 °C/W junction-to-case) to a copper landing pad. The die uses Infineon's fifth-generation HEXFET planar process, which optimises cell pitch to minimise specific on-resistance while retaining rugged avalanche capability. The device is fully avalanche-rated, meaning the body diode can absorb unclamped inductive turn-off energy without destruction - critical for motor, solenoid, and relay drive applications where stored magnetic energy must be dissipated safely. Typical applications include DC-DC buck converters, low-side load switches, motor and solenoid drivers, LED backlight drivers, relay replacement circuits, and battery protection / power path OR-ing in 12 V and 24 V systems. The 100 V rating also provides comfortable margin for 24 V industrial buses and telecom -48 V negative-rail return paths. Design consideration: a 10 kΩ gate pull-down resistor is recommended to prevent unintended turn-on from dV/dt induced Miller coupling when the device is used in high-side or half-bridge configurations. Keep the gate drive loop compact to minimise ringing. This page consolidates distributor pricing, pin-compatible alternatives in the same DPAK footprint, and design notes specific to the IRLR120NTRPBF that are not found in the manufacturer datasheet alone.
IRLR2705TRLPBF - 55V N-Channel HexFET MOSFET, DPAK | Infineon
The Infineon IRLR2705TRLPBF is a 55V single N-channel HexFET power MOSFET in a TO-252AA (DPAK) surface-mount package, delivering up to 28A continuous drain current at 25C with a maximum on-resistance of 40 mOhm. As a fifth-generation HEXFET device, it combines ultra-low on-resistance per silicon area, logic-level gate drive capability, fast switching speed, and full avalanche rating, packaged in lead-free tape-and-reel form with an exposed drain tab for low thermal impedance. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically a MOS structure) to regulate current flow between drain and source terminals; IRLR2705TRLPBF belongs to the N-channel enhancement-mode MOSFET family within the broader discrete semiconductors hierarchy (N-channel MOSFET -> power MOSFET -> discrete semiconductor). Logic-level gate drive means the device can be fully turned on from a 4V VGS supply, making it directly compatible with microcontrollers, low-voltage gate drivers, and battery-powered logic. Key features include a 40 mOhm maximum static drain-source on-resistance at VGS=10V, 28A continuous drain current at 25C case temperature, 55V drain-source breakdown voltage, fast switching for high-frequency DC-DC conversion, and 100% avalanche-tested ruggedness. The TO-252AA (DPAK) package exposes the drain tab, providing a thermal resistance of approximately 50 C/W junction-to-case that supports substantial sustained current when soldered to adequate copper area. Internally, the IRLR2705TRLPBF uses Infineon's advanced HEXFET process, which optimizes cell density to minimize RDS(on) while preserving avalanche energy capability. The logic-level threshold (typically VGS(th) around 1V to 2V) enables direct interface with 3.3V or 5V logic, eliminating the need for a dedicated gate-driver supply in low-side switching positions. Typical applications include high-efficiency DC-DC converters, motor control H-bridges, low-voltage battery protection circuits, solenoid and relay drivers, and power-OR-ing in redundant supplies. Designers commonly deploy it in automotive subsystems, industrial automation, robotics, and uninterruptible power supplies where 55V breakdown voltage gives ample headroom for 12V and 24V bus transients. When designing with this MOSFET, prioritize a low-inductance gate-loop layout (gate driver placed within 10 mm of the gate pin) and provide at least 1 square inch of copper pour on the drain tab to keep junction temperature within safe limits. For high-frequency switching, add a 10 Ohm to 100 Ohm gate-source resistor to suppress ringing and avoid unintended turn-on from Miller coupling. This page synthesizes distributor pricing as of 2026-09-13, drop-in DPAK-compatible alternatives, and practical PCB layout notes not found in the standalone manufacturer datasheet.
IRLR2705TRPBF - 55V 28A N-Channel HEXFET MOSFET | Infineon
The Infineon IRLR2705TRPBF is a fifth-generation HEXFET N-channel power MOSFET rated for 55V VDS, 28A continuous drain current (at Tc), and 40 mOhm maximum RDS(on) in a TO-252AA (DPAK) surface-mount package. It belongs to Infineon's logic-level gate-drive family, which simplifies driving directly from microcontrollers, 5V gate drivers, and battery sources without an additional charge pump. According to the Infineon datasheet, the device is fully avalanche-rated, lead-free, and built on advanced IR process technology that minimizes die-level on-resistance per silicon area. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate current in DC-DC converters, motor drives, load switches, and battery protection circuits. Within the broader taxonomy, the IRLR2705TRPBF sits in the N-channel enhancement-mode MOSFET family, which is the dominant topology for low-side switching because electrons (the majority carrier) deliver 2-3x lower on-resistance per unit area than P-channel equivalents. N-channel MOSFETs in DPAK packages remain the workhorse of 12V/24V automotive, industrial, and consumer power designs. Key features of the IRLR2705TRPBF include logic-level VGS(th) compatible with 4V drive, fast switching speed (Qg = 16.7 nC typical per Mouser listing), 68W maximum power dissipation at Tc, and an intrinsic body diode rated for avalanche energy. The DPAK (TO-252AA) footprint offers a thermally efficient exposed pad that delivers roughly 50 C/W junction-to-ambient on a 1-square-inch copper pour - a substantial improvement over smaller SOT-23 or SO-8 alternatives. The combination of low Qg, low RDS(on), and small package makes it well-suited to high-frequency switching up to several hundred kHz. Typical applications span automotive ECU switching, DC motor control, solenoid drivers, LED driving, battery management, and synchronous-rectifier secondary-side switches. Designers also use it in buck and boost converter positions where 40V-class breakdown and 30A-class current are required. Compared with the older IRF IRLZ44N, the IRLR2705 family delivers lower Qg for similar RDS(on), reducing gate-drive losses at higher switching frequencies. When designing with the IRLR2705TRPBF, ensure that VGS does not exceed the +/-16V absolute maximum, place the gate resistor (typically 10-100 ohm) close to the gate pin to suppress ringing, and provide adequate thermal copper to keep Tj below 150C under worst-case SOA. The device is also fully avalanche-rated, so designers can rely on its ruggedness for inductive loads provided the avalanche energy stays within the datasheet EAS rating. This page synthesizes distributor pricing, drop-in alternatives drawn from the same DPAK footprint family, and practical design notes that go beyond what is in the manufacturer datasheet. Engineers sourcing the IRLR2705TRPBF for new designs or service replacements will find here a single-page reference for cross-reference, PCB layout, and lifecycle decisions.
IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon
The Infineon IRLR2905TRPBF is a 55 V, 42 A N-channel HEXFET power MOSFET utilizing fifth-generation advanced process technology, housed in a surface-mount TO-252AA (DPAK) package. It delivers an ultra-low on-resistance of 27 mOhm max at VGS = 10 V with a continuous drain current rating of 42 A at Tc and 110 W of power dissipation. A power MOSFET is a voltage-controlled semiconductor switch that regulates or switches current flow in power electronics. Within the broader taxonomy, the IRLR2905TRPBF belongs to the N-channel enhancement-mode MOSFET family, which itself sits under power MOSFETs, then discrete semiconductors, and finally the wider power management and switching IC ecosystem. Its low on-resistance minimizes conduction losses, while logic-level gate drive capability allows direct microcontroller interface. Key features include logic-level gate drive (fully enhanced at VGS = 4.5 V), an on-resistance of just 27 mOhm, fast switching performance, ultra-low RDS(on) per silicon area, fully avalanche-rated ruggedness, and lead-free RoHS-compliant construction. The HEXFET fifth-generation design represents International Rectifier's (now Infineon) advanced process technology optimized for both switching and linear-mode operation. Internally, the device uses a planar cell structure with optimized die sizing to balance conduction loss, switching speed, and avalanche energy capability. The DPAK (TO-252) surface-mount package provides an exposed tab that doubles as the drain terminal and serves as a thermal dissipation path, enabling high-current handling in a compact footprint suitable for automated assembly. Typical applications include motor control, DC-DC converters, battery management systems, power load switching, and high-current switching circuits in industrial and automotive systems. The part is rated for operation up to 175 C junction temperature, providing thermal margin for demanding power environments. When designing with this MOSFET, ensure the gate drive voltage meets the threshold specification (logic-level compatible) and provide adequate heatsinking via PCB copper area on the drain tab. The avalanche-rated rating allows safe operation during unclamped inductive switching events such as motor or relay turn-off. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IRLR2908TRPBF - 80V N-Ch HEXFET MOSFET, 30A, DPAK | Infineon
The Infineon IRLR2908TRPBF is an 80V single N-channel HEXFET Power MOSFET in a surface-mount TO-252AA (DPAK) package, rated for 30A continuous drain current (Tc) and 120W power dissipation (Tc). It features an advanced process technology that achieves extremely low on-resistance per silicon area, with a maximum RDS(on) of 28 mOhm and typical total gate charge of 22 nC. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently switch or amplify electronic signals in power-conversion circuits. N-channel MOSFETs like the IRLR2908TRPBF are the dominant choice for low-side switching and synchronous-rectifier positions because their lower on-resistance per unit area gives better efficiency than equivalent P-channel parts. This part belongs to the broader family of discrete semiconductors (MOSFETs -> transistors -> discrete semiconductors) used wherever efficient power switching is required. Key features include a logic-level gate drive threshold (Vgs(th) typically 1V-2V), avalanche-rated ruggedness, 175C maximum junction operating temperature, and fast switching speed. The DPAK (TO-252AA) surface-mount package provides a compact footprint with a tab that doubles as a drain thermal pad, supporting moderate-power PCB designs. The device uses Infineon's IR MOSFET process technology, which combines a proprietary trench-gate cell design with a refined body diode to deliver low RDS(on) and high di/dt capability. This technology is well-suited to high-frequency SMPS, motor control, and automotive subsystems where both conduction loss and switching loss must be minimized. Typical applications include DC-DC converters, motor drive half-bridges, solenoid/relay drivers, LED lighting ballasts, battery protection, and automotive ECU power stages. The wide 80V drain-source rating provides ample margin for 24V industrial and 12V automotive rails. When designing with this part, ensure the gate-source voltage stays within the abs-max rating (typically +/-20V) and provide adequate heatsinking through the drain tab. For hard-switched topologies, a gate-driver IC is recommended to achieve the published switching speeds. This page synthesizes distributor pricing, drop-in DPAK alternatives, and practical thermal/layout design notes not found in the manufacturer datasheet alone.
IRLR3105TRPBF - 55V N-Channel HEXFET MOSFET, 25A, TO-252
The Infineon IRLR3105TRPBF is an N-channel logic-level HEXFET power MOSFET rated at 55 V VDS and 25 A continuous drain current (Tc), housed in a surface-mount TO-252AA (DPAK) package. It leverages Infineon's IR MOSFET process to deliver a maximum on-resistance of 37 mOhm at VGS=10 V and a low total gate charge of 13.3 nC, achieving extremely low on-resistance per silicon area while remaining fully logic-level compatible with 4 V gate drive signals. Maximum power dissipation is 57 W at Tc and the part is supplied on 13-inch tape-and-reel (TRPBF suffix) for high-volume SMT assembly. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate drain current. N-channel MOSFETs such as the IRLR3105TRPBF are the workhorse of low-voltage DC power conversion - in the broader taxonomy they sit beneath discrete semiconductors and above simple passives. The HEXFET cell geometry, introduced by International Rectifier (now part of Infineon), places thousands of parallel cells across the die to minimize Rds(on) while keeping gate charge low, which translates directly into lower conduction and switching losses. Key features of the IRLR3105TRPBF include logic-level gate drive (full enhancement at VGS=4.5 V, so it can be driven directly from 5 V microcontrollers and gate-driver outputs), 37 mOhm maximum Rds(on) at VGS=10 V, 13.3 nC total gate charge for fast switching edges, 55 V VDS rating suitable for 12 V and 24 V automotive / industrial buses, and a robust 57 W power dissipation capability when soldered to a sufficiently large drain-tab copper pour. The TO-252AA footprint is industry-standard and pin-compatible with the broader Infineon/IR D-PAK family. The device uses Infineon's proven IR MOSFET silicon technology, which provides high avalanche ruggedness, low thermal resistance, and a body diode with adequate reverse-recovery characteristics for most bridge and synchronous-rectifier applications. Compared with newer OptiMOS generations the IRLR3105 has a higher Rds(on) and gate charge, but it remains a cost-effective, well-documented choice for cost-sensitive designs where bleeding-edge efficiency is not required. Typical applications include DC motor drive and H-bridge PWM control, low-voltage synchronous rectification in non-isolated buck converters, solenoid and relay drivers, LED lighting load switching, battery protection and load-disconnect circuits in 12 V/24 V systems, and general-purpose power-ORing. The combination of a 55 V rating and 25 A current capability covers almost all 12 V and 24 V load-switching requirements with comfortable margin. When designing with this part, ensure the drain tab is soldered to a copper area of at least 1 square inch to keep the junction temperature within safe limits - derate current by approximately 50% when mounted on the minimum recommended pad. Always observe the ±16 V VGS maximum to avoid gate-oxide rupture, and add a small gate-source resistor (10-100 ohm) to suppress ringing in high-di/dt switching topologies.
IRLR3110ZTRLPBF - 100V 63A N-Channel HEXFET MOSFET | Infineon
The Infineon IRLR3110ZTRLPBF is a 100 V, 63 A N-channel HEXFET® power MOSFET housed in a TO-252AA (DPAK) surface-mount package with tape-and-reel orientation left. The device is built on Infineon's IR MOSFET™ trench technology and targets industrial applications requiring extremely low on-resistance per silicon area combined with fast switching and a 175°C maximum junction temperature. An N-channel power MOSFET is a voltage-controlled semiconductor switch whose drain current is modulated by a gate-source voltage. The HEXFET family refers to Infineon/IInternational Rectifier's vertically-diffused trench MOSFET architecture, which sits in the broader power MOSFET category within discrete semiconductors. These devices are used as switching elements or low-resistance pass elements in power conversion systems, where their low RDS(on) minimizes conduction loss and their high-speed switching capability reduces switching loss. Key specifications include VDS max of 100 V, RDS(on) max of 14 mΩ (or 11 mΩ per third-party listings), continuous drain current up to 42 A at TC and pulsed drain current rating supporting the 63 A ID max figure at lower temperature conditions, with gate charge of 34 nC. The logic-level gate drive simplifies interfacing directly to microcontrollers, gate drivers, and PWM controllers without requiring a separate charge-pump or bootstrap supply. The TO-252AA (DPAK) package offers a low thermal-resistance path through the tab, with the part rated at 140 W power dissipation at TC. The exposed tab functions as the drain connection, while gate, drain, and source are arranged in the standard DPAK pinout. Repetitive-avalanche-rated cells and 175°C junction operation make this part suitable for rugged industrial environments with high inrush or unclamped inductive switching. Typical applications include DC-DC converters in industrial 48 V bus systems, motor drive H-bridges for 24-72 V brushless DC motors, solenoid and relay drivers, power OR-ing, battery protection circuits, and primary-side switching for telecom bricks. Its logic-level gate and low RDS(on) also make it appropriate for hot-swap controllers and electronic fuse implementations. When designing with this part, place the gate driver as close as possible to the gate pin and use a 10 kΩ pull-down on the gate to prevent false turn-on during power-up. Ensure the tab thermal pad carries at least 1 square inch of copper pour, and verify SOA against worst-case VDS and ID combinations before finalizing the design. This page synthesizes distributor pricing, parametrically validated drop-in alternatives, and practical design notes not found in a single manufacturer datasheet or distributor listing.
IRLR3110ZTRPBF - 100V N-Channel HEXFET MOSFET | Infineon
The Infineon IRLR3110ZTRPBF is an N-channel 100 V HEXFET power MOSFET rated for 42 A continuous drain current (Tc) and 140 W power dissipation, supplied in a TO-252AA (DPAK) surface-mount package. It combines an ultra-low on-resistance of 14 mOhm maximum at VGS=10V with a total gate charge of 15 nC, producing a Figure of Merit (FOM = Rds(on) x Qg) that is well below older generation MOSFETs and directly translates to lower conduction and switching losses. A power MOSFET is a voltage-controlled three-terminal semiconductor switch used in switching-mode power supplies, motor drives, and DC-DC converters. MOSFETs sit within the discrete semiconductor taxonomy as transistor sub-class, and the HEXFET line represents Infineon's proprietary advanced process trench MOSFET technology optimized for low Rds(on) per silicon area. The 'RLR' package suffix indicates TO-252 (DPAK), a JEDEC-compliant surface-mount outline with a gull-wing lead frame and an exposed metal tab for through-hole-style thermal sinking on a PCB copper pour. Key features include a logic-level capable threshold (VGS(th) typically 1.8V to 2.5V), avalanche-rated single-pulse energy, an integrated body diode for inductive commutation, and RoHS-compliant lead-free (PBF) matte-tin plating. The advanced process technology eliminates the need for an internal gate resistor, simplifying gate drive design. Maximum junction temperature is rated at 175 C, with a thermal resistance from junction to case (RthJC) on the order of 1.0 C/W, allowing high power dissipation when the tab is properly soldered to a sufficient PCB copper area. Architecturally, the IRLR3110Z utilizes a vertical N-channel trench cell structure, where the channel is formed along the sidewalls of etched silicon trenches. This produces a higher cell density per unit area than planar MOSFETs, reducing Rds(on) without increasing die size. The 'Z' suffix denotes the latest-generation HEXFET process, with optimized switching characteristics that reduce ringing and EMI when paired with proper gate-resistance sizing. Typical applications include synchronous rectification in 48V telecom isolated DC-DC converters, high-current brushless DC (BLDC) motor drive half-bridges, low-voltage industrial eFuse circuits, Class-D audio amplifier output stages, and battery protection / hot-swap controllers in 12V/24V distributed power systems. When designing with this MOSFET, ensure VGS drive voltage reaches 10V for full Rds(on) enhancement, and use a Kelvin-source connection if available. Add adequate TVS protection across the drain-source path if avalanche energy cannot be guaranteed below the rated EAS. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IRLR3114ZTRPBF - 40V, 130A N-Channel HEXFET MOSFET | Infineon
The Infineon IRLR3114ZTRPBF is a single N-channel HEXFET power MOSFET rated for 40 V drain-source voltage, 130 A continuous drain current, and 4.5 mOhm maximum on-resistance (VGS=10 V), housed in a surface-mount TO-252AA (DPAK) package. It uses Infineon's latest-generation IR MOSFET silicon process to achieve an extremely low RDS(on) per silicon area and supports a 175 C maximum junction operating temperature for high-stress switching environments. A power MOSFET such as the IRLR3114ZTRPBF is a voltage-controlled three-terminal semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied. HEXFET power MOSFETs belong to the broader power MOSFET family, which sits hierarchically under discrete semiconductors, then power transistors, then switch-mode power conversion. The IRLR3114ZTRPBF's logic-level gate drive (full enhancement at VGS=4.5 V, threshold ~2.5 V) makes it compatible with microcontroller GPIO and standard gate-driver ICs without requiring a charge pump. Key features include 4.5 mOhm max RDS(on) at VGS=10 V, 42 A continuous drain current at Tc=25 C, 140 W power dissipation at Tc=25 C, fast switching speed, improved repetitive avalanche ruggedness, and a -55 C to +175 C operating junction temperature range. The TO-252AA (DPAK) surface-mount package provides a low-profile footprint suitable for high-density switching power supply, motor drive, and DC-DC converter designs while still offering a tab for thermal dissipation. Architecturally, the part employs a planar strip-cell HEXFET die with optimized cell pitch to balance RDS(on), gate charge (40 nC typical), and avalanche energy. The combined low gate charge and low on-resistance allow high-efficiency switching at frequencies from 50 kHz to 500 kHz, making it well-suited for synchronous rectification in switch-mode power supplies where conduction and switching losses both matter. Typical applications include synchronous rectification in isolated and non-isolated DC-DC converters, low-side switch in buck and forward converters, motor drive H-bridge and half-bridge stages, battery protection and OR-ing, hot-swap controllers, and high-current load management in industrial and automotive subsystems. When designing with this device, the engineer should minimize loop inductance in the source-return and gate-drive paths, place a small gate-source resistor to damp ringing, and ensure that thermal vias or a sufficient copper pour on the DPAK tab keep the junction below the 175 C maximum. Compared to a Schottky diode, this MOSFET offers lower conduction loss above ~20 A but requires careful gate-drive timing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with all values verified against the Infineon HEXFET datasheet and live distributor listings as of 2026-09-13.
IRLR3410TRLPBF - 100V 17A N-Channel HEXFET MOSFET | Infineon
The Infineon IRLR3410TRLPBF is a 100V, 17A single N-channel power MOSFET built on IR's fifth-generation HEXFET technology, housed in a surface-mount TO-252AA (DPAK) package. It combines a maximum on-resistance of 105 mΩ at VGS=10V with a low 22.7 nC total gate charge, making it suitable for high-efficiency switching and synchronous-rectification designs. The part is qualified as logic-level gate drive, so it can be driven directly from 5V or 3.3V logic without a gate-drive booster. A power MOSFET is a voltage-controlled three-terminal switch whose drain-source channel conducts current when the gate-source voltage exceeds the threshold. HEXFET cells place many parallel vertical DMOS stripes on one die to minimize RDS(on) per unit silicon area, yielding low conduction loss and high current density. This device belongs to the discrete-semiconductor family (MOSFET -> power MOSFET -> N-channel MOSFET -> logic-level N-channel MOSFET) and sits in the power-management hierarchy of any switching converter or motor drive it powers. Key benefits include 100V drain-source breakdown, 17A continuous drain current at TC=25°C, 79W power dissipation at TC=25°C, logic-level VGS(th) (typically 1.0-2.0V) so a microcontroller GPIO can drive the gate, and an avalanche-rated single-pulse body diode. The TO-252AA (DPAK) provides a low RθJC of about 1.5°C/W for tab-mounted heatsinking, while still allowing reflow soldering. From an architectural standpoint, the device uses a stripe-cell planar HEXFET layout optimized for low on-resistance per area. Combined with low Qg, this yields low gate-drive loss in hard-switched topologies up to several hundred kHz. The fifth-generation process also improves UIS (avalanche) ruggedness over earlier HEXFET generations. Typical uses are DC-DC converters (buck, boost, synchronous rectification), low-voltage motor drives (brushed DC, BLDC, solenoid drivers), battery protection / load switching in 12V-48V packs, and Class-D audio output stages. The logic-level gate drive and TO-252 footprint make it a popular drop-in for 12V automotive subsystems and 24V industrial rails. When designing in, respect SOA limits (derate ID with rising TC), keep the gate trace short and use a 10Ω gate resistor for noise control, and provide sufficient copper pour under the tab to keep RθJA within budget at the expected load current. This page consolidates current distributor pricing, verified drop-in equivalents, and practical design notes that are not all present in the manufacturer datasheet, giving engineers a single reference for sourcing and second-source decisions.
IRLR3410TRPBF - 100V 17A N-Channel HEXFET MOSFET DPAK | Infineon
The Infineon IRLR3410TRPBF is a fifth-generation HEXFET N-channel power MOSFET rated at 100V drain-source voltage and 17A continuous drain current, housed in a surface-mount TO-252AA (DPAK) package. It combines a logic-level gate drive threshold with an industry-leading low on-resistance of 105 mOhm and total gate charge of 22.7 nC, providing an efficient switching solution for medium-voltage power conversion. The device dissipates up to 79W at 25C case temperature. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used in power electronics to convert and regulate electrical energy. As a member of the N-channel enhancement-mode MOSFET family within the broader power-semiconductor hierarchy (MOSFET -> discrete semiconductor -> power switch), it is the workhorse of modern DC-DC converters, motor drives, and load switches. The TO-252 (DPAK) surface-mount package combines a compact PCB footprint with a metallic tab that doubles as the drain terminal and a thermal dissipation path. The IRLR3410TRPBF is designed for logic-level gate drive, meaning it can be fully turned on with a Vgs of approximately 4.5V, making it directly compatible with 5V microcontrollers and gate-driver ICs without needing a charge pump or bootstrap. The fifth-generation HEXFET process achieves one of the lowest RDS(on) per silicon area values in its class, reducing conduction losses and improving thermal margin. Fast switching speeds support high-frequency PWM operation in switch-mode power supplies. Typical applications include primary-side switching in 24V telecom DC-DC converters, low-voltage motor drive H-bridges, solenoid and relay drivers, synchronous rectifier replacements for Schottky diodes, and hot-swap circuits in distributed power systems. Its 100V rating provides ample headroom for 48V telecom rails and industrial 72V transient environments. When designing with this device, ensure the gate-drive impedance is low enough to achieve the rated switching speeds, and that the DPAK tab is soldered to a sufficient copper pour area (at least 1 square inch) to keep junction temperature within safe operating limits under full-load conditions.
IRLR3410TRRPBF - 100V 17A N-Channel HEXFET MOSFET | Infineon
The Infineon IRLR3410TRRPBF is a 100V single N-channel HEXFET power MOSFET housed in a surface-mount TO-252AA (DPAK) package, rated for 17A continuous drain current (Tc) and 79W power dissipation (Tc). It uses Infineon's advanced IR MOSFET process technology to deliver an ultra-low on-resistance of 105 milliohms at VGS=10V with logic-level gate drive compatibility. The device is offered in tape-and-reel right (TRR) orientation for high-volume SMD assembly lines. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or regulate current in power-conversion circuits. The N-channel enhancement-mode MOSFET hierarchy spans discrete MOSFET -> power MOSFET -> N-channel MOSFET -> HEXFET family -> IR MOSFET process, and IRLR3410TRRPBF sits within Infineon's fifth-generation HEXFET lineup. Its low RDS(on) and fast switching speed position it as a building block for switch-mode power supplies, motor drives, and load-switching applications where conduction losses dominate thermal design. Key features include 105 mOhm maximum RDS(on) at VGS=10V, 22.7 nC total gate charge, logic-level gate drive threshold (typically 1V at 250uA), and full avalanche ruggedness rating. The device is fully avalanche-rated, fast-switching, and uses an advanced process technology to achieve the lowest possible on-resistance per silicon area. The D-Pak surface-mount package offers a low thermal resistance path and is compatible with automated pick-and-place assembly. Typical applications span DC-DC converters, low-voltage motor control, solenoid and relay drivers, battery protection circuits, synchronous rectification, and hot-swap controllers. The wide safe operating area and 100V breakdown voltage also make it suitable for 48V telecom rails and industrial bus switching. When designing with this part, gate-drive strength and gate-loop inductance are the dominant factors determining switching loss; use a dedicated gate driver IC and minimize source-inductance for reliable operation above 100 kHz.
IRLR3636TRLPBF - 60V 99A N-Ch IR MOSFET, DPAK | Infineon
The Infineon IRLR3636TRLPBF is a 60 V, 99 A N-channel power MOSFET built on Infineon's IR (International Rectifier) HEXFET® technology, housed in a surface-mount TO-252AA (DPAK) package. It delivers a maximum drain-source on-resistance of 6.8 mΩ at VGS = 10 V and supports continuous drain current of 50 A at TC = 25 °C, with a power dissipation rating of 143 W. The part uses logic-level gate drive (4.5 V VGS recommended) and offers a total gate charge of 33 nC, making it well suited to high-frequency switching. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between drain and source terminals. The IRLR3636TRLPBF belongs to the N-channel enhancement-mode MOSFET family, where applying a positive gate-source voltage creates an inversion layer that conducts current. As part of the broader MOSFET → power transistor → discrete semiconductor → semiconductor taxonomy, it sits in the voltage-regulator/synchronous-rectification segment of power electronics where low RDS(on) and fast switching directly impact efficiency. Key features of the IRLR3636TRLPBF include 6.8 mΩ maximum RDS(on), 99 A peak ID, logic-level gate threshold (VGS(th) around 1.0-2.5 V), avalanche-rated body diode, and 33 nC total gate charge. The low on-resistance minimises conduction losses, while the small QG reduces switching losses at high frequencies, collectively improving system efficiency in SMPS and motor-drive applications. The device uses Infineon's advanced IR process technology, combining a trench MOSFET architecture with a ruggedised die layout. This produces a low figure-of-merit (FOM = RDS(on) × QG) and robust avalanche capability. The DPAK package provides a low thermal resistance path via its exposed drain tab, which doubles as the mounting surface for heat-sinking to the PCB copper pour. Typical applications include DC motor drives, high-efficiency synchronous rectification in switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), and high-speed power switching in hard-switched topologies. The logic-level gate makes it directly compatible with 5 V microcontroller outputs without a dedicated gate driver in lower-power circuits. When designing with this MOSFET, ensure that the gate drive voltage stays within the absolute-maximum VGS rating of ±20 V (or ±16 V per some datasheet sources). PCB layout should minimise the source-inductance loop; place the gate driver physically close to the gate pin and use a Kelvin-source connection where possible. This page synthesises distributor pricing, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet alone, giving engineers a single reference for selecting and qualifying this part.
IRLR3636TRPBF - 60V 50A N-Ch HEXFET MOSFET, DPAK | Infineon
The Infineon IRLR3636TRPBF is a 60V N-channel power MOSFET built on Infineon's proprietary IR MOSFET (HEXFET) technology, rated for 50A continuous drain current at 25°C case temperature and 143W maximum power dissipation in a surface-mount TO-252AA (DPAK) package. It features an ultra-low R_DS(on) of 6.8 mOhm maximum at V_GS = 10V, with a typical on-resistance near 5.4 mOhm, and a total gate charge of 33 nC that minimizes driver losses in high-frequency switching applications. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate electrode to modulate majority-carrier conduction between the drain and source terminals. In the broader component taxonomy, the IRLR3636TRPBF belongs to the power MOSFET family, which sits within discrete semiconductors, alongside IGBTs, thyristors, and GaN/SiC FETs. HEXFET technology specifically refers to Infineon's (formerly International Rectifier's) hexagonal-cell DMOS architecture, which maximizes channel width per unit silicon area to minimize on-state resistance while keeping die size compact for surface-mount power packages. Key electrical characteristics include a maximum drain-to-source voltage (V_DSS) of 60V, continuous drain current of 50A at T_C = 25°C, pulsed drain current capability, and avalanche-rated single-pulse ruggedness. The device is fully characterized for both hard-switched and soft-switched topologies, with specified R_DS(on), gate charge (Q_G = 33 nC), and reverse recovery charge (Q_rr) data enabling accurate loss budgeting in synchronous rectification and DC motor drive circuits. Typical applications include DC motor drive circuits, high-efficiency synchronous rectification in switched-mode power supplies (SMPS), uninterruptible power supply (UPS) battery switches, high-speed power switching in telecom and server DC-DC converters, and hard-switched half-bridge or full-bridge stages. The TO-252AA (DPAK) package's low thermal resistance and exposed tab allow direct PCB heatsinking via copper pour, eliminating the need for an external heatsink in many 3-5W designs. When designing with the IRLR3636TRPBF, ensure the gate drive voltage reaches at least 10V for full enhancement, place the gate resistor close to the device to suppress parasitic ringing, and verify that the SOA curve at the chosen V_DS and I_D operating point stays within the DC line for continuous operation. For drop-in alternatives, consider Infineon's IRLR3636TRLPBF (same die, different reel orientation), AUIRLR3636 (AEC-Q101 automotive grade), or VBsemi VBE1606 (Chinese cross-brand equivalent in the same TO-252 package). This page synthesizes distributor pricing, drop-in alternatives sourced from cross-reference databases, and practical design notes that complement - but do not replace - the manufacturer datasheet. Designers should always confirm thermal, avalanche, and SOA parameters against the official Infineon datasheet before final qualification.
IRLR3915TRPBF - 55V 61A N-Channel HEXFET MOSFET | Infineon
The Infineon IRLR3915TRPBF is an N-channel HEXFET power MOSFET rated at 55 V VDS, 61 A continuous drain current, and 14 mOhm maximum on-resistance, housed in a TO-252AA (DPAK) surface-mount package. It uses Infineon's advanced process technology to deliver extremely low RDS(on) per silicon area while supporting a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. The device is logic-level compatible and ships in tape-and-reel packaging. An N-channel power MOSFET is a voltage-controlled semiconductor switch in which a positive gate-to-source voltage creates a conductive channel between drain and source. It belongs to the broader family of field-effect transistors (FET -> MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET) and is the standard building block for switching-mode power conversion, motor control, and load management. Compared with older planar MOSFETs, HEXFET technology uses a cellular trench-style die layout to pack millions of parallel cells per cm², slashing on-resistance without enlarging the silicon. The IRLR3915TRPBF's headline specifications are a 55 V drain-source breakdown, 14 mOhm maximum RDS(on) at 10 V VGS, 61 A continuous ID at 25°C, and a 175°C maximum junction temperature. Logic-level drive is supported by a low threshold voltage, allowing direct PWM from 3.3 V or 5 V microcontrollers without a gate-driver stage. The TO-252AA (DPAK) tab provides a low-thermal-resistance path (around 40°C/W with proper PCB copper) and is suitable for hand-soldered prototypes as well as high-volume SMD lines. Internally, the die combines a HEXFET cell array, an internal gate resistor, and an ESD/zener-protected gate. The low gate charge (Qg ≈ 61 nC) keeps drive losses small, while the high repetitive-avalanche rating enables robust operation in inductive-switching applications such as solenoid PWM and DC motor drives. Avalanche-energy-rated parts are preferred over generic MOSFETs in circuits where the body diode must absorb unclamped inductive kickback. Typical applications include high-current DC-DC converters, automotive and industrial solenoid drivers, brushless DC (BLDC) and brushed DC motor control, battery protection / reverse-polarity OR-ing, and high-side / low-side switching in power tools. The wide SOA and 175°C junction rating also suit hot environments like under-hood automotive electronics and LED driver stages. When designing with the IRLR3915TRPBF, plan for adequate PCB copper under the DPAK tab to keep junction temperature below the derating curve at full load; at 30 A continuous, even a small RDS(on) × I² dissipation demands attention. Always add a gate-source pull-down resistor (typ. 10 kΩ) so the FET stays off during MCU reset, and verify SOA against the worst-case avalanche pulse in inductive loads. This page synthesises distributor pricing, qualified drop-in alternatives, and practical DPAK thermal/layout design notes not assembled on a single manufacturer datasheet.
IRLR7843TRPBF - 30V 161A N-Ch HEXFET MOSFET | Infineon
The Infineon IRLR7843TRPBF is an N-Channel 30V HEXFET power MOSFET rated for 161A continuous drain current (Tc) and 140W power dissipation (Tc), packaged in a surface-mount TO-252AA (DPAK). Built on Infineon's HEXFET technology, it delivers an ultra-low on-resistance of 3.3 mOhm (per Mouser listing) and a total gate charge of 34 nC, targeting high-frequency synchronous buck converters and isolated DC-DC converter applications where switching losses dominate. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used for power conversion and switching applications. As a member of the discrete semiconductor hierarchy, MOSFETs sit beneath the broader category of transistors and are the workhorse of modern switch-mode power supplies (SMPS), motor drives, and load switches. N-channel enhancement-mode MOSFETs like the IRLR7843TRPBF are the dominant topology for low-voltage, high-current rails because their lower on-resistance per unit silicon area minimizes conduction loss. Key differentiating features include a logic-level-compatible gate drive, fully characterized avalanche energy and current, and an ultra-low gate impedance that supports fast switching edges. The TO-252AA (DPAK) surface-mount package delivers a low thermal resistance path when soldered to a copper pad area of approximately 1 square inch, making it suitable for both hand-soldered prototypes and high-volume SMT assembly lines. Architecturally, the IRLR7843TRPBF uses a planar HEXFET cell structure with a vertical current flow that maximizes die area utilization. The combination of 30V drain-source breakdown voltage, sub-4 mOhm Rds(on), and 34 nC gate charge makes it well-balanced for synchronous rectification in 12V-input buck converters and for OR-ing/low-side switch roles in telecom and industrial power systems. Typical applications include high-frequency synchronous buck converters for computer processor power, isolated DC-DC converters with synchronous rectification for telecom and industrial use, and OR-ing/low-side switches in multi-rail systems. The part is lead-free (Pb-free suffix) and RoHS compliant per Infineon's product page. When designing with this device, prioritize gate-drive strength - a 1A peak gate driver is recommended for fast turn-on/off, and the source connection should be Kelvin-connected to the gate driver return to avoid source-inductance-induced turn-off transients. Estimate junction temperature under worst-case conduction and switching conditions before finalizing PCB copper area. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IRLR8726TRLPBF - 30V 86A N-Channel StrongIRFET™ MOSFET | Infineon
The Infineon IRLR8726TRLPBF is a 30V N-channel power MOSFET rated for 86A continuous drain current (Tc) in a TO-252AA (DPAK) surface-mount package, built on Infineon's StrongIRFET™ technology platform. Key headline parameters are 30V VDS max, 5.8 mΩ RDS(on) max, and 75W power dissipation (Tc), with a total gate charge of 15 nC that places it firmly in the logic-level, low-Qg category of mid-voltage trench MOSFETs. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate current in power conversion circuits; N-channel devices such as the IRLR8726 family conduct between drain and source when a positive gate-to-source voltage is applied. The StrongIRFET™ family is engineered for low RDS(on) per unit area and high avalanche ruggedness, optimizing the trade-off between conduction loss and switching loss that defines the figure of merit (FOM) of a power switch. Distinguishing electrical characteristics include a logic-level VGS(th) that allows direct drive from 3.3V or 5V microcontrollers without a dedicated gate driver, 15 nC total gate charge enabling fast switching transitions, and a low 5.8 mΩ on-resistance that minimizes conduction losses even at the high currents encountered in motor drive and synchronous rectification. The DPAK package delivers these properties in a footprint familiar to industrial designers and supports wave or reflow soldering. Architecturally, the IRLR8726 uses a stripe-cell trench gate structure with an optimized P-body region to balance RDS(on), Qg, and avalanche energy. This gives it strong performance in both hard-switched topologies (Buck, Boost) and soft-switched applications, where the low FOM reduces switching losses that dominate at high frequency. Typical applications for the IRLR8726TRLPBF include BLDC and brushed DC motor control in cordless tools and e-bikes, low-voltage synchronous rectification in isolated DC-DC converters, high-current load switching in industrial automation, battery protection and OR-ing in 12V/24V systems, USB Power Delivery and quick-charge adapter switches, and Class-D audio amplifier output stages. The DPAK footprint makes it ideal where IPD-style integration is not desired and a discrete, thermally efficient part is preferred. When designing with this MOSFET, place the gate drive return (source Kelvin connection where possible) as close as possible to the source pad to minimize parasitic inductance, and verify that the SOA at the application's actual VDS and pulse duration stays within the datasheet envelope; at full rated current in DPAK, a copper area of at least 1 square inch is recommended for thermal relief. According to the Infineon datasheet, the part is RoHS compliant and rated for an operating junction temperature up to 175°C. This page combines manufacturer datasheet data, distributor pricing as of 2026-09-10, drop-in alternatives, and practical design notes that are not aggregated on a single distributor product page.
IRLR8726TRPBF - 30V 86A N-Channel StrongIRFET™ | Infineon
The Infineon IRLR8726TRPBF is an N-channel HEXFET power MOSFET rated for 30 V drain-to-source voltage, 86 A continuous drain current at case temperature, and 5.8 mΩ maximum on-resistance at VGS=10 V, packaged in a surface-mount TO-252AA (DPAK). It belongs to Infineon's StrongIRFET™ family, which is optimized for low RDS(on) and high-speed switching in 12 V and 24 V DC-bus systems. An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a positive gate-to-source voltage is applied, modulating a channel of electrons beneath the gate oxide. Power MOSFETs are the active switches used inside synchronous buck converters, half-bridge stages, eFuse blocks, hot-swap controllers, and motor-driver bridges, where they sit in the broader power-conversion hierarchy between the controller IC and the load. The DPAK (TO-252AA) is a single-die SMD package family descended from the through-hole TO-220, with a metal tab that doubles as the drain terminal and a heatsink mounting surface, enabling compact PCB designs that still dissipate tens of watts. Key features include a typical gate charge of 15 nC, low R_DS(on) of 5.8 mΩ, a 75 W power dissipation rating at Tc, and the standard StrongIRFET™ robust body-diode ruggedness for unclamped inductive switching. These parameters make the part especially well-suited to synchronous rectification, where switching loss and conduction loss both directly determine overall converter efficiency. The device uses Infineon's proven planar HEXFET process, providing a mature trade-off between RDS(on), gate charge, and avalanche ruggedness. The low 5.8 mΩ RDS(on) at 10 V VGS, combined with only 15 nC of gate charge, balances conduction and switching losses, enabling high-frequency operation without efficiency collapse. Typical applications include high-frequency synchronous buck converters for processor power, high-side switching in 12 V/24 V industrial systems, battery protection circuits in lithium-ion packs, USB-PD power-path management, and DC motor control in eMobility and robotic systems. When designing with this MOSFET, gate-drive strength must be sized to the 15 nC Qg - an under-driven gate causes slow turn-on and excessive switching loss. The exposed metal tab of the DPAK package must be soldered to the PCB copper pour to keep junction temperature within safe limits. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineering context for BOM selection and supply-chain decisions.
IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon
The Infineon IRLR9343TRPBF is a P-channel power MOSFET rated at -55 V VDS max with 105 mOhm maximum on-resistance, supplied in a surface-mount PG-TO252-3 (DPAK) package. It is part of Infineon's HEXFET family and is specifically optimized for class-D audio amplifier applications, where low RDS(on) and fast switching translate directly into lower conduction loss and cleaner PWM output. The device carries 20 A continuous drain current (Tc) and dissipates 79 W (Tc), with 31 nC typical total gate charge for efficient driver-stage design. A P-channel MOSFET is a type of field-effect transistor in which the conducting channel is formed by inverting the surface of an N-type semiconductor with a negative gate-source voltage. Unlike N-channel MOSFETs that require the load to be tied to ground, P-channel MOSFETs are typically placed on the high-side of a load and switched by pulling the gate toward ground. This high-side placement eliminates the need for a charge pump or bootstrap circuit in low-voltage systems, simplifying gate drive architecture. Key specifications include a -55 V drain-source breakdown (withstand margin above 40 V automotive rails), 105 mOhm max RDS(on) at VGS = -10 V (reducing conduction losses in class-D output stages), and a threshold voltage suitable for direct logic-level (-5 V) gate drive from typical microcontroller or analog PWM controllers. The TO-252 surface-mount package supports automated assembly while still providing a metal tab for thermal dissipation. The device uses Infineon's IR MOSFET silicon technology, a planar HEXFET process that has been refined over decades for power-conversion robustness. The 105 mOhm on-resistance combined with the modest gate charge yields a low FOM (figure-of-merit), enabling high-frequency PWM operation without excessive driver losses. Avalanche-rated, the device tolerates unclamped inductive switching events common in motor and audio applications. Typical applications include class-D audio amplifier output stages, automotive load and motor switching (seat modules, window lifts, mirror adjusters), DC-DC converter high-side switches, battery protection and reverse-polarity OR-ing circuits, and power-OR/redundant-rail management in telecom and computing systems. When designing with this device, gate drive impedance matters more than peak gate voltage. A 10-100 ohm gate resistor dampens ringing caused by the package's lead inductance and the MOSFET's input capacitance; too low a value risks EMI, too high slows switching and increases switching loss. This page synthesizes distributor pricing, drop-in cross-brand alternatives, and practical class-D design notes not found in the manufacturer datasheet.
IRLS3034TRLPBF - 40V 343A 1.7mΩ N-Channel HEXFET MOSFET | Infineon
The Infineon IRLS3034TRLPBF is a 40V N-channel HEXFET power MOSFET rated for 343A pulsed drain current and 195A continuous drain current at 25°C, housed in a surface-mount D2PAK (TO-263) package. Its headline parameters are VDS of 40V, maximum RDS(on) of 1.7 mΩ at VGS=10V/195A, and a power dissipation of 375W at TC=25°C. The TRLPBF suffix indicates a 7-inch tape-and-reel shipping format with lead-free, RoHS-compliant terminations. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch designed to handle high currents and voltages with minimal conduction loss. HEXFET is Infineon's (formerly International Rectifier's) trademarked family of power MOSFETs built on a planar cell architecture that places the source and channel regions on the silicon surface for robust avalanche behavior and ease of paralleling. Power MOSFETs sit within the broader hierarchy of discrete semiconductors → transistors → MOSFETs, and are the foundational switching element in switched-mode power supplies (SMPS), motor drives, and synchronous rectification stages. Key differentiating features of the IRLS3034TRLPBF include an ultra-low on-resistance of 1.7 mΩ that minimizes conduction loss at high currents, a logic-level gate threshold range (VGS(th) around 2.5V) enabling direct drive from 5V MCUs and gate drivers, and a total gate charge of 108 nC that allows fast switching transitions in hard-switched topologies. The D2PAK (TO-263) surface-mount package provides a tab-style drain connection that doubles as a heatsink surface-mount pad, supporting continuous 195A operation with appropriate PCB copper area. The device uses Infineon's IR MOSFET technology with a vertical DMOS structure optimized for low RDS(on) and high di/dt ruggedness. Its avalanche-rated design and 375W power dissipation capability make it tolerant of unclamped inductive switching events in motor and solenoid applications. The internal body diode supports synchronous rectification, though its reverse-recovery characteristics are tuned for hard-switched use rather than continuous conduction. Typical applications include high-current DC motor drives in industrial automation, secondary-side synchronous rectification in 24V/48V SMPS, high-current battery management switching, and high-side/low-side switching in uninterruptible power supplies (UPS). It is equally suited to eFuse and hot-swap controller output stages where a low-loss pass element is required. When designing with this MOSFET, gate-drive strength is critical: a peak source current of at least 2A is recommended to fully enhance the device within 50 ns and minimize switching loss in the 100 kHz to 1 MHz range. The D2PAK land pattern must include generous top-side copper around the drain tab to keep junction temperature within safe limits under continuous 195A operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, including thermal estimates derived from the datasheet's thermal resistance and realistic PCB copper area assumptions.
IRLS3036TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon
The Infineon IRLS3036TRLPBF is a 60 V N-channel HEXFET power MOSFET housed in a surface-mount D2PAK (TO-263) package, built on Infineon's IR MOSFET technology and optimized for logic-level gate drive. Per the manufacturer datasheet it delivers a continuous drain current of up to 270 A at 25 °C and 195 A at case temperature, with a pulsed capability of 1100 A, a maximum on-resistance of 1.9 mOhm at VGS=10 V, and a power dissipation rating of 380 W at Tc=25 °C. The TRL suffix indicates tape-and-reel packaging, and the PBF suffix confirms lead-free / RoHS-compliant terminations. What is a HEXFET power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch designed to handle high currents and voltages with low conduction loss. HEXFET is Infineon (formerly International Rectifier) brand name for its planar/HEXFET cell geometry, and the 'IR' family prefix denotes parts optimized for low gate charge and logic-level drive. Within the broader taxonomy this part sits as: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> power transistor -> semiconductor device. Key features of the IRLS3036TRLPBF include an ultra-low typical Rds(on) of 1.9 mOhm, total gate charge (Qg) of 91 nC typical, logic-level Vgs(th) operation, integrated body diode for synchronous rectification, and enhanced dv/dt ruggedness for hard-switched topologies. The D2PAK package provides a low thermal resistance path from die to PCB, enabling high continuous current without external heatsinking in many designs. Architecturally, the device uses a HEXFET cell structure with a planar DMOS process, a logic-level gate, and a robust avalanche-rated body diode. This combination delivers an excellent figure-of-merit (FOM = Rds(on) x Qg) for high-frequency synchronous-rectification and motor-drive applications where both switching loss and conduction loss matter. Typical applications include DC motor drives, high-efficiency synchronous rectification in switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), high-speed power switching, and hard-switched high-frequency circuits in industrial and automotive environments. The wide safe-operating area (SOA) and avalanche rating also suit battery protection and OR-ing functions. When designing with this part, pay close attention to PCB layout to minimize parasitic source inductance, use low-impedance gate-drive circuitry, and ensure the heatsink or copper-pour area is sized for the worst-case continuous dissipation. Proper gate-drive voltage (10 V recommended) and adequate input/output capacitance on the gate are critical to avoid shoot-through and ensure clean switching transitions. This page synthesizes distributor pricing as of 2026-09-15, drop-in HEXFET alternatives in the same D2PAK footprint, and practical design notes not consolidated in the manufacturer datasheet.
IRLTS2242TRPBF - 20V P-Ch HEXFET MOSFET, TSOP-6 | Infineon
The Infineon IRLTS2242TRPBF is a -20V single P-Channel HEXFET power MOSFET in a TSOP-6 (Micro 6) surface-mount package, optimized for broadest availability from distribution partners and rated for 6.9A continuous drain current at 25°C with 2W power dissipation. It uses Infineon's IR MOSFET technology with a logic-level gate, fully enhanced at 4.5V VGS and capable of operation down to 2.5V VGS, with a typical on-resistance of 32 mOhm at VGS = -10V. A P-channel MOSFET is a type of field-effect transistor where the conducting channel is formed by negatively-charged carriers (holes). In load-switch and high-side switch topologies, a P-channel device simplifies the drive circuit because its source connects to the positive supply rail and the gate is pulled below the source to turn the device on, eliminating the need for a bootstrap or charge pump that an N-channel equivalent would require. The HEXFET process technology provides low figure-of-merit RDS(on) × Qg for efficient switching in compact packages. Key features of the IRLTS2242TRPBF include super logic-level gate drive (operable from 2.5V), 32 mOhm maximum RDS(on), -20V VDS rating suitable for 12V rails with adequate transient headroom, and a low-profile TSOP-6 package that occupies roughly 9 mm² of board area. The device is qualified to industrial-grade standards and supplied on tape-and-reel for high-volume assembly. Typical applications include high-side load switching in battery-powered devices, USB power-distribution switches, notebook DC-DC converters, and motor-driver reverse-battery protection circuits. The TSOP-6 footprint is widely adopted and supported by multiple second-source suppliers, which simplifies PCB layout reuse and multi-vendor sourcing. When designing with this part, place a gate resistor (typically 10-100 ohm) close to the gate pin to limit peak current from the gate driver, and add a TVS diode or zener across drain-source when switching inductive loads. The TSOP-6 thermal pad (pin 6) should be soldered to a copper pour for continuous-current derating above 1A. This page combines verified distributor pricing, parametric alternatives, and PCB design guidance that goes beyond the manufacturer datasheet alone, giving engineers a single decision-ready reference for the IRLTS2242TRPBF.
IRLTS6342TRPBF - 30V 8.3A N-Channel Logic-Level MOSFET | Infineon
The Infineon IRLTS6342TRPBF is a logic-level N-channel power MOSFET rated at 30 V VDS and 8.3 A continuous drain current, housed in a compact TSOP-6 (Micro 6) surface-mount package. It uses Infineon's IR MOSFET technology with a maximum on-resistance of 17.5 mOhm and a logic-level gate that can be driven directly from 2.5 V or 4.5 V sources, making it ideal for battery-operated equipment. The device is qualified to JEDEC standards and optimized for low-voltage switching applications. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate terminal to control current flow between the drain and source terminals. Logic-level MOSFETs are a sub-category specifically optimized to fully turn on with gate drive voltages as low as 2.5 V, eliminating the need for a gate driver IC in low-voltage systems. In the broader taxonomy, the IRLTS6342 belongs to N-channel enhancement-mode MOSFETs, which sit within the discrete transistor family, the power semiconductor hierarchy, and ultimately the semiconductor device category. Key features include a typical on-resistance that allows high-efficiency switching with minimal conduction loss, a low total gate charge of 11 nC at 4.5 V VGS that reduces driver losses, and an industry-standard TSOP-6 footprint that is multi-vendor compatible. The MSL1 moisture sensitivity rating and JEDEC qualification ensure robust manufacturability for consumer-grade products. The IRLTS6342 employs a trench-based IR MOSFET cell structure that achieves a low figure-of-merit (RDS(on) x Qg), which translates directly into lower switching and conduction losses in high-frequency DC-DC converters and load-switch circuits. The device also features an intrinsic body diode, supporting use in synchronous rectification and freewheeling applications. Typical applications include battery-operated DC motor inverters, low-side load switches in portable electronics, synchronous rectification in buck converters, battery protection circuits, and USB power management. Its logic-level gate makes it especially well-suited to direct connection to microcontrollers and battery cells. When designing with this MOSFET, ensure the gate drive rise/fall times are adequate for the switching frequency, and account for SOA limits during linear-mode operation such as hot-swap or inrush limiting. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.