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ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon
The Infineon ISC025N08NM5LF2ATMA1 is an 80 V N-channel Linear FET optimized for hot-swap, e-fuse, and battery management applications, featuring an extremely low 2.55 mΩ maximum on-resistance and a wide safe operating area (SOA). Housed in the compact surface-mount PG-TDSON-8 FL package, it delivers 23 A continuous drain current at TA and up to 198 A continuous drain current at TC, with power dissipation of 3 W (TA) and 217 W (TC). The part is rated for 3 W (Ta) and 217 W (Tc) power dissipation, making it suitable for high-current, low-loss switching applications. A Linear FET (also called a logic-level, hot-swap, or SOA-optimized MOSFET) is a specific class of power MOSFET engineered with a larger die area and a wider safe operating area than standard trench MOSFETs, sacrificing some figure-of-merit to gain linear-region robustness. Within the power semiconductor taxonomy, this places the part as: MOSFET -> power MOSFET -> N-channel power MOSFET -> Linear FET (hot-swap class) -> Infineon OptiMOS 5 LF2 family. Linear FETs are widely used in telecom hot-swap controllers, server ORing, and battery protection where transient linear-mode operation occurs during plug-in or fault events. Key features include 96 nC total gate charge, 3.9 V maximum gate-threshold voltage, and a strong 198 A continuous drain current rating that supports high inrush handling. The PG-TDSON-8 FL package offers an exposed thermal pad that drives a low junction-to-case thermal resistance, enabling 217 W power dissipation when mounted on a properly cooled PCB. The device is supplied on a 13-inch tape-and-reel carrier per the ATMA1 ordering code suffix. The ISC025N08NM5LF2ATMA1 uses Infineon's OptiMOS 5 technology platform, which combines a trench-gate structure with field-plate optimization to balance RDS(on), gate charge, and avalanche ruggedness. Compared with conventional 80 V MOSFETs, the LF2 die has roughly 2-3x the active silicon area, which produces the wider SOA, lower RDS(on) of 2.55 mΩ, and a linear-mode operation capability for several milliseconds at high VDS. Typical applications include 48 V telecom hot-swap controllers, server and data-center e-fuse circuits, battery management system (BMS) protection FETs, industrial DC load switches, and power distribution units (PDU) requiring high inrush handling. The wide SOA and 198 A continuous current make it well suited to 12 V/24 V/48 V bus architectures that must tolerate capacitive loads and short-circuit transients without the protection FET entering thermal runaway. When designing with this part, pay close attention to the linear-mode power dissipation envelope - even a few milliseconds of operation in the saturation region can produce hundreds of watts. A gate-source pull-down resistor (typically 10 kΩ) and a controlled gate-drive slew rate are recommended to prevent inadvertent turn-on and to coordinate the SOA profile with the upstream hot-swap controller. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the ISC025N08NM5LF2ATMA1, complementing the manufacturer datasheet with cross-referenced engineering guidance not found in a single source.
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
The Infineon ISC028N03LF2SATMA1 is an N-channel trench MOSFET rated at 30 V VDS with 24 A continuous drain current at TA and 128 A at TC, housed in a surface-mount PG-TDSON-8-62 (5x6 mm) package with an exposed thermal pad. According to verified distributor listings (DigiKey and Mouser), the part delivers a maximum on-resistance of 2.8 mOhm at VGS=10 V and a 2.35 V gate threshold, belonging to Infineon's OptiMOS 5 30V family tuned for synchronous buck, load-switch and ORing applications. The PG-TDSON-8 footprint is a drop-in standard across Infineon's 30V/40V/60V OptiMOS 5 family, simplifying PCB reuse across product variants. An N-channel power MOSFET is a voltage-controlled majority-carrier device that conducts current between drain and source when a gate-source voltage above the threshold is applied. The trench MOSFET architecture places the gate inside a vertical etched channel, increasing channel density per unit silicon area and dramatically lowering on-resistance versus older planar DMOS structures. The part is categorized under discrete semiconductors as a power MOSFET, within the broader hierarchy of discrete semiconductors, transistors, and power switches. Key features include the 2.8 mOhm max RDS(on) at 10 V VGS, 24 A continuous drain current at 25 C ambient, 128 A pulsed capability at case temperature, and 3 W / 83 W power dissipation ratings for TA and TC respectively. The OptiMOS 5 technology also provides low gate charge Qg and low Qrr, minimizing switching losses at high frequency. The lead-free, RoHS-compliant PG-TDSON-8 package uses an exposed drain pad for low thermal resistance, and the device is rated for -55 C to +175 C junction temperature operation. Technical depth: Infineon's OptiMOS 5 30V generation uses a refined trench cell pitch and a thin top-metal layer to reduce both conduction and switching losses. The combination of 2.8 mOhm RDS(on) and low Qg makes this part especially suitable for the low-side switch of a synchronous buck converter at switching frequencies up to 1 MHz, where switching loss would otherwise dominate. The 30V VDS rating provides comfortable margin above 12V rails for transients. Typical applications include DC-DC synchronous rectification in server and telecom POL converters, hot-swap and load-switch circuits in 12V distribution, battery protection in low-voltage Li-ion packs, and high-current USB-PD power paths. Designers also use it as a low-side switch in motor-drive H-bridges under 30V bus operation. The part is well-suited where space-constrained PCB designs require a small footprint with high current density. When designing with this MOSFET, ensure the gate-drive voltage reaches at least 10 V to achieve the published RDS(on) - 4.5 V Vgs will significantly raise on-resistance and conduction loss. The exposed pad must be soldered to a sufficiently large copper pour (>=1 square inch on top side) to keep junction temperature within the 175 C maximum under worst-case load. Standard ESD precautions apply at the gate. This page synthesizes distributor pricing, drop-in alternative listings, and practical thermal design notes that the manufacturer datasheet alone does not surface, giving procurement and design engineers a single reference for evaluation.
ISC030N12NM6ATMA1 - 120V 194A OptiMOS 6 N-Ch MOSFET | Infineon
The Infineon ISC030N12NM6ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 6 120 V technology platform, delivering 194 A continuous drain current (Tc) and an ultra-low typical on-resistance of 3.0 mOhm in a PG-TSON-8-3 (SuperSO8 5x6) surface-mount package. The device is rated for VDS of 120 V, supports a gate threshold range compatible with 4.5 V / 10 V standard logic-level drive, and dissipates up to 250 W at Tc = 25 C, making it a strong candidate for high-current synchronous rectification and motor-drive stages. An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device where a positive gate-to-source voltage creates an inversion layer that conducts current between drain and source. OptiMOS 6 is Infineon's sixth-generation trench MOSFET platform optimized for low FOM (figure of merit), combining low RDS(on) with low Qg/Qrr to minimize both conduction and switching losses in high-frequency SMPS, motor-control, and OR-ing applications. The N-channel variant requires a positive VGS to turn on, and the "NM6" suffix in the part number identifies the family generation. Key features include a maximum RDS(on) of 3.4 mOhm at VGS = 10 V, low Qg typical of OptiMOS 6 for fast switching, and a single N-channel source-down package (PG-TSON-8-3 / SuperSO8 5x6) that exposes the die on the bottom thermal pad for direct PCB cooling. The "030" in the part number indicates the RDS(on) class (3.0 mOhm typical), and the ATMA1 suffix designates tape-and-reel packaging for high-volume assembly. The die uses Infineon's latest trench-cell architecture to balance cell density against ruggedness. Typical applications include high-frequency DC-DC converters (synchronous rectification side), 48 V automotive e-fuse and battery protection, OR-ing and hot-swap controllers, server/telecom point-of-load conversion, and high-current BLDC motor drives. The 120 V rating gives generous headroom over 80 V automotive load-dump transients and 48 V telecom rails. The low Qrr and Qoss figures also make this part attractive for hard- and soft-switched topologies running above 100 kHz. Designers should pay close attention to gate-drive voltage: OptiMOS 6 120 V parts are specified for full RDS(on) at VGS = 10 V. Driving at 4.5 V works but increases on-resistance. The PG-TSON-8-3 footprint requires substantial PCB copper pours (or a thermal via array under the exposed pad) to realize the rated 250 W dissipation. A snubber or gate-resistance tuning is recommended for hard-switched bridges to control dV/dt ringing on the source inductance.
ISC033N03LF2SATMA1 - 30V 108A N-Channel MOSFET | Infineon
The Infineon ISC033N03LF2SATMA1 is an N-channel 30 V OptiMOS power MOSFET in a source-down PG-TDSON-8-62 (5x6 mm) surface-mount package, rated for 108 A continuous drain current at case and an extremely low 3.3 mOhm maximum on-resistance at 10 V VGS. It is built on Infineon's advanced OptiMOS trench technology targeting sub-40 V synchronous rectification, OR-ing and hot-swap roles. A power MOSFET is a voltage-controlled semiconductor switch in which applying a gate-source voltage above the threshold (here, typically 2.35 V max) creates a conductive inversion layer between drain and source. N-channel devices such as this one are the workhorses of low-voltage power conversion, sitting in the hierarchy discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> OptiMOS, and they dominate synchronous buck converters, hot-swap controllers, battery protection and load switches because of their very low conduction loss and fast switching speed. The headline electrical specifications are 30 V VDS, 108 A ID at TC, 3.3 mOhm maximum RDS(on) at VGS = 10 V, and 71 W power dissipation at TC. The source-down package forces the source connection to the large thermal pad so heat can be sunk directly into the PCB copper, enabling sustained 108 A operation when the board itself is used as the heatsink. The device is rated for 3 W dissipation in free air, which falls to the PCB copper area in real layouts. Typical applications for this part include synchronous rectification on the secondary side of isolated DC-DC converters, OR-ing FETs in redundant 12 V or 24 V telecom/server rails, hot-swap controllers in plug-in modules, motor-drive low-side switches, and high-current point-of-load converters in servers and datacenters. The very low on-resistance minimises conduction loss at high current, which directly improves efficiency and thermal headroom. When designing with this part, keep the gate-drive loop area as small as possible, source a 10 V gate from a dedicated gate driver, and provide a robust 1 microfarad VDS snubber if the part is used in hard-switched topologies. For very-high-current paths, parallel multiple ISC033N03LF2SATMA1 devices with separate gate resistors to balance dynamic current sharing. This page synthesises distributor pricing, parametric proximity to Infineon same-family parts and cross-brand drop-in candidates, plus practical layout guidance not found in the Infineon datasheet alone.
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
The Infineon ISC037N12NM6ATMA1 is a 120 V N-channel power MOSFET built on Infineon's OptiMOS 6 process, offering an ultra-low 3.7 mOhm typical on-resistance in a compact PG-TDSON-8 FL (SuperSO8) surface-mount package. It is rated for 19.2 A continuous drain current at Ta=25C and 163 A pulsed at Tc, with power dissipation of 3 W at Ta and 214 W at Tc. The part targets high-efficiency switching converters where low conduction and switching losses are required. What is an N-channel MOSFET? An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch whose majority carriers are electrons. Housed in the power-management hierarchy between discrete transistors and power management ICs, MOSFETs are the fundamental building blocks of synchronous buck converters, motor drives, and battery-protection switches. The OptiMOS 6 family is Infineon's latest-generation trench MOSFET technology optimized for low Rds(on) x Qg figure-of-merit, which directly translates to lower switching losses at high frequencies. Key features include a 120 V drain-source breakdown voltage, 3.7 mOhm typical Rds(on) at Vgs=10 V, gate charge optimized for fast switching, and integrated protection through avalanche-rated single-pulse robustness. The PG-TDSON-8 FL package exposes a thermal pad to the PCB, enabling direct heat extraction into copper pours and keeping junction temperatures within safe limits under continuous operation. The OptiMOS 6 technology uses a refined trench cell structure with a thin epitaxial layer to balance Rds(on) and switching charge. Compared with previous-generation OptiMOS 5, this part typically achieves 20-30% lower Rds(on) at the same die size, enabling higher power density designs without increasing PCB footprint. The low gate charge also reduces driver losses, which becomes significant in high-frequency telecom and solar applications. Typical applications include 48 V telecom point-of-load converters, solar micro-inverters and optimizers, brushless DC motor drives for power tools, e-bike controllers, high-current battery protection circuits, and synchronous rectification in server and industrial SMPS. The wide safe operating area also supports hot-swap and OR-ing functions in 48 V distribution. When designing with this part, observe the SOA in the datasheet for pulsed currents above 50 A. Place the gate driver within 20 mm of the gate pin to minimize parasitic inductance, and use Kelvin-source connection (pin 2) where possible to suppress source-inductance-induced gate-oscillation. A small RC snubber (10 ohm + 1 nF) across drain-source may be required for hard-switched topologies. This page synthesizes distributor pricing, drop-in alternatives within the PG-TDSON-8 family, and practical design notes not found in the manufacturer datasheet. Information gain: side-by-side comparison with Infineon OptiMOS 5 and competing N-channel MOSFETs from onsemi and Vishay.
ISC040N10NM7ATMA1 - 100V 130A OptiMOS 7 N-Channel MOSFET | Infineon
The Infineon ISC040N10NM7ATMA1 is a 100 V N-channel power MOSFET from Infineon's OptiMOS™ 7 family, delivering 18 A continuous drain current at Ta (25 °C ambient) and 130 A continuous drain current at Tc (case). Packaged in the surface-mount PG-TDSON-8-34 (SSO8) with an exposed drain pad for low thermal resistance, the device is optimized for high-frequency, high-current switching where conduction and switching losses must both be minimized. Source rating: 3 W (Ta) and 150 W (Tc). According to the Infineon datasheet, the part is qualified for industrial and consumer SMPS, motor drive, and battery protection applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to efficiently route or modulate current in power-conversion circuits. N-channel enhancement-mode MOSFETs are the dominant building block of synchronous buck/boost converters, half-bridges, and full-bridges, sitting hierarchically under discrete semiconductors → transistors → MOSFETs → power MOSFETs. The OptiMOS 7 family represents Infineon's 100 V generation, with reduced figure-of-merit (RDS(on) × Qg) to push switching frequencies higher while keeping total losses lower than prior generations. Key features include low RDS(on) per area for reduced conduction loss, an integrated Schottky-like body diode for reduced reverse-recovery (Qrr), and a low gate charge (Qg) for fast switching. The PG-TDSON-8-34 (SSO8) package offers a low thermal resistance path through the exposed pad, enabling sustained high-current operation with proper PCB copper thermal management. Typical applications include 48 V telecom and industrial bus converters, high-current synchronous rectification in SMPS, hot-swap and e-fuse circuits, motor control half-bridges, and battery management system (BMS) protection MOSFETs. The wide safe operating area also suits automotive ECU power trains and solar MPPT stages when appropriately derated. When designing with this part, ensure the gate-drive voltage reaches at least 10 V for full RDS(on) rating and that the PCB thermal copper area under the exposed pad meets the datasheet's 6 cm² reference footprint for published SOA and RthJC values. Use a gate resistor (typ. 10 Ω) to dampen parasitic ringing.
ISC045N03L5SATMA1 - 30V 4.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
The Infineon ISC045N03L5SATMA1 is an N-channel OptiMOS™ 5 power MOSFET rated at 30 V VDS, with a maximum on-resistance of 4.5 mΩ at VGS = 10 V, housed in a SuperSO8 5x6 (PG-TDSON-8-6) surface-mount package. It delivers continuous drain current of 18 A at TA = 25 °C and 63 A at TC = 25 °C, with power dissipation of 2.5 W (TA) and 30 W (TC). The device belongs to Infineon's OptiMOS™ 5 30 V family, which combines Infineon's StrongIRFET™ legacy with leading-edge trench technology. A power MOSFET is a voltage-controlled semiconductor switch that regulates current flow between drain and source terminals via an isolated gate electrode. N-channel MOSFETs are the workhorse of low-voltage (<100 V) synchronous rectification, DC-DC conversion, and hot-swap switching because electrons have higher mobility than holes, yielding lower RDS(on) per unit silicon area. Modern sub-40 V trench MOSFETs such as the ISC045N03L5SATMA1 form the synchronous rectification stage in buck converters, motor-drive half-bridges, and OR-ing circuits where efficiency, thermal performance, and PCB footprint are equally critical. Key features of the ISC045N03L5SATMA1 include 4.5 mΩ maximum RDS(on) at 10 V VGS, threshold voltage of 2 V typical at 250 µA ID, total gate charge (Qg) of 13 nC at VGS = 10 V, and input capacitance (Ciss) of 870 pF at 15 V VDS. These metrics translate directly to lower conduction and switching losses, enabling higher-frequency operation with smaller magnetics and cooler thermal rise. The SuperSO8 5x6 footprint exposes a top-side thermal pad that drops the junction-to-case thermal resistance dramatically versus standard SO-8. The device targets high-frequency, low-loss switching: synchronous buck converters in telecom and server DC-DC point-of-load regulators, hot-swap controllers on 12 V/24 V distribution rails, battery protection circuits for multi-cell Li-ion packs, and motor-drive half-bridges in 12 V/24 V brushless DC fans, pumps, and e-mobility peripherals. The combination of 30 V rating, low RDS(on), and small Qg keeps both conduction and driver losses minimal. When designing with this part, size the gate-driver so VGS swings fully between 10 V (enhancement) and 0 V (full cutoff); partial enhancement at 4.5 V leaves the MOSFET in the linear region with high dissipation. Place a 1 Ω gate resistor and a local 100 nF + 10 µF bypass on VCC of the gate driver. Use Kelvin-source return to the driver ground to suppress source-inductance-induced turn-off ringing.
ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon
The Infineon ISC046N13NM6ATMA1 is an N-channel OptiMOS 6 power MOSFET rated at 135 V drain-source voltage, delivering 17 A continuous drain current at TA (25 C ambient) and up to 142 A at TC (case temperature), with on-state resistance optimized for switching power conversion. Housed in a surface-mount PG-TDSON-8 package, it dissipates 3 W at TA and 211 W at TC, with a maximum junction temperature of 175 C. A power MOSFET is a voltage-controlled semiconductor switch that uses an isolated gate electrode to modulate current flow between the drain and source terminals. N-channel MOSFETs conduct when the gate is pulled above the source by the threshold voltage, and they form the building blocks of DC-DC converters, motor drives, synchronous rectifiers, and hot-swap controllers. The OptiMOS 6 family (a successor to OptiMOS 5) improves key switching-loss figures such as reverse-recovery charge (Qrr) and peak reverse-recovery current (Irm) - Infineon quotes 70 percent lower Qrr and 45 percent lower Irm versus prior generations, reducing switching losses and EMI in hard-switched topologies. Key headline parameters include a 135 V VDS rating, 17 A continuous ID at 25 C ambient, 142 A pulsed ID at TC, and 3 W / 211 W power dissipation limits. The PG-TDSON-8 (also called TDSON-8) package exposes a drain tab that serves as both electrical drain and primary thermal path. The MOSFET is qualified for industrial-grade temperatures (typically -55 C to +175 C operating range based on the LCSC listing). Typical applications include motor drives, uninterruptible power supplies (UPS), telecom DC-DC converters, solar inverters, and synchronous rectification in switched-mode power supplies. The 135 V rating leaves comfortable headroom above 100 V telecom bus rails (e.g., 48-72 V rectified) while staying below the 150 V secondary-rectifier sweet spot. Designers should pay attention to gate-drive voltage: OptiMOS 6 parts in this class typically specify a 10 V gate drive for full Rds(on) specification, with a logic-level threshold around 1.0-2.5 V. Layout must keep the high-di/dt power loop area minimal to control switching transients and ringing. This page consolidates Infineon datasheet parameters, distributor pricing, and pin-to-pin alternative options in the PG-TDSON-8 footprint to support sourcing and second-source decisions for motor-drive and UPS designs.
ISC052N03LF2SATMA1 - 30V N-Ch 74A OptiMOS 5 MOSFET | Infineon
The Infineon ISC052N03LF2SATMA1 is an N-channel 30 V MOSFET in Infineon's OptiMOS 5 30V family, rated for 18 A continuous drain current at 25 °C ambient and 74 A at case temperature, with an exceptionally low on-resistance of 5.2 mΩ at 10 V VGS and packaged in the 8-pin PG-TDSON-8-62 (TDSON EP) surface-mount package. It uses trench MOSFET technology optimized for synchronous rectification in switch-mode power supplies (SMPS), delivering industry-leading figure of merit (FOM) that minimizes conduction and switching losses simultaneously. An N-channel MOSFET is a voltage-controlled semiconductor switch whose drain-source channel is induced by a positive gate-source voltage, enabling efficient power switching at frequencies far beyond the capability of bipolar transistors. In the system hierarchy, this device falls under discrete semiconductors > transistors > MOSFETs > power MOSFETs, and serves as a fundamental switching element in switched-mode power supplies (SMPS), motor drives, and battery protection circuits. Key features include a 30 V drain-source breakdown voltage (VDS), 5.2 mΩ maximum RDS(on) at VGS=10 V, low gate charge (Qg) typical of OptiMOS 5 technology, and a logic-level compatible threshold voltage. The PG-TDSON-8-62 package provides an exposed drain pad for direct PCB heat-sinking and ultra-low package parasitic inductance, essential for high-frequency switching where every nanohenry of source inductance degrades switching speed. Power dissipation ratings are 3 W at TA=25 °C and 52 W at TC=25 °C, indicating a strong thermal envelope relative to the package footprint. Architecturally, the OptiMOS 5 platform uses advanced trench cell geometry with a refined epitaxial structure, achieving lower specific on-resistance per unit silicon area than the prior OptiMOS 3 generation. This translates to either smaller die size for the same RDS(on) or lower conduction loss for a given footprint, both of which directly improve system power density. The 5.2 mΩ on-resistance also limits I²R losses to roughly 0.7 W at 12 A continuous load. Typical applications include synchronous rectification in 12 V server and telecom buck converters, OR-ing FETs in redundant power systems, hot-swap controllers in enterprise equipment, and low-voltage motor drive H-bridges. In each case the device's low RDS(on) and small TDSON footprint simplify PCB layout and reduce overall solution size. When designing with this MOSFET, pay particular attention to gate-drive voltage headroom: at VGS=4.5 V the RDS(on) is significantly higher than the 10 V spec, so for logic-level or 5 V-driven systems check the typical curves before assuming 5.2 mΩ. Place the gate drive return path directly over the source pad to minimize parasitic source inductance that can cause ringing and false turn-on. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers a single source for component selection.
ISC056N08NM6ATMA1 - 80V N-Ch OptiMOS 6 MOSFET | Infineon
The Infineon ISC056N08NM6ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 6 80V platform, rated for 80 V VDS, 15.3 A continuous drain current at TA=25°C, and 88 A pulsed drain current at TC=25°C, housed in a surface-mount PG-TDSON-8 FL (also known as TDSON-8 Flat Lead) package. It delivers >24% lower RDS(on) than the previous OptiMOS generation, making it well-suited to high-efficiency telecom, server, solar, and battery-protection power stages. A power MOSFET is a voltage-controlled switch that converts a small gate-drive signal into a large conduction path between drain and source. It sits within the discrete-semiconductor hierarchy: MOSFET -> power transistor -> discrete semiconductor. The OptiMOS 6 generation advances Infineon's trench MOSFET technology with a finer cell pitch and an improved shield-gate structure, reducing both on-resistance and switching charge for the same silicon area, which translates directly into lower conduction and switching losses in synchronous-rectifier and hot-swap topologies. Key features include an extremely low on-resistance per area, optimized switching charge (Qg, Qgd) for high-frequency operation, a logic-level compatible gate threshold, and 100 W maximum power dissipation at TC=25°C. The 80 V drain-source rating provides substantial headroom above nominal 48 V telecom rails and 36-48 V battery systems, while the 8x8 mm PG-TDSON-8 FL footprint offers an exposed pad that keeps thermal resistance low enough for high-current designs without an external heatsink. The architecture combines a high-cell-density OptiMOS 6 trench with a low-inductance lead-frame package; this combination minimizes both conduction losses (low RDS(on)) and switching losses (low Qgd), which is the principal trade-off engineers face when selecting between older OptiMOS 5 and newer OptiMOS 6 parts. Typical applications include 48 V telecom hot-swap and OR-ing circuits, server DC-DC converter primary-side switches, solar micro-inverters and MPPT stages, battery-management system protection MOSFETs, and high-current buck/boost converters in industrial power tools. When designing with this device, ensure the gate-drive voltage fully enhances the channel (VGS=10 V recommended) and minimize parasitic source-inductance with Kelvin-source layout where possible; the FL (flat-lead) version is preferred over the standard TDSON-8 leadform when target designs must meet tight thermal budgets. This page synthesizes distributor pricing, drop-in alternatives from the Infineon OptiMOS 6 family, and practical design notes that go beyond what is printed in the manufacturer datasheet.
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
The Infineon ISC058N04NM5ATMA1 is a 40V N-channel power MOSFET in Infineon's OptiMOS 5 40V normal-level family, delivering 5.8 mOhm maximum on-resistance at 10V VGS and 63A continuous drain current (Tc) in a PG-TDSON-8 FL (SuperSO8 5x6) surface-mount package. It uses a normal-level gate threshold (higher VGS(th) than logic-level parts), targeting high-efficiency synchronous rectification, motor control, and battery-protection switching. The device is rated at 3W power dissipation at TA=25C and 42W at TC=25C. A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate conduction between drain and source. Within the broader taxonomy, the ISC058N04NM5ATMA1 belongs to N-channel enhancement-mode MOSFETs -> power MOSFETs -> discrete semiconductors. The OptiMOS 5 process from Infineon uses trench-gate technology to minimize Rds(on) x Qg figure-of-merit, which directly translates into lower conduction and switching losses in SMPS, BLDC, and OR-ing applications. Key specifications include VDS = 40V, Rds(on) max = 5.8 mOhm at VGS = 10V and ID = 31A, ID max = 63A at TC, VGS(th) = 3.4V (typical/normal level), and a SuperSO8 5x6 exposed-pad package for low thermal resistance. The lead-free, RoHS-compliant, MSL-rated part ships in Tape & Reel (T&R) and is qualified for industrial and consumer power-conversion designs. Typical applications include synchronous rectification in 12V-24V DC-DC converters, BLDC motor drives, battery management systems (BMS), load switching in power distribution, and high-current USB-PD power paths. The SuperSO8 footprint is widely second-sourced, simplifying multi-vendor sourcing. When designing with this device, ensure the gate-drive voltage is at least 10V for full enhancement, place the gate-source resistor close to the GS pins to prevent inadvertent turn-on from dv/dt, and verify SOA at the operating point using the datasheet curves.
ISC060N06NM6ATMA1 - 60V 62A OptiMOS 6 N-Channel MOSFET | Infineon
The Infineon ISC060N06NM6ATMA1 is an N-channel OptiMOS 6 power MOSFET rated at 60 V drain-to-source voltage and 62 A continuous drain current (case-rated), housed in a surface-mount PG-TDSON-8 package. According to distributor DigiKey listings, it dissipates 3 W at Ta and 50 W at Tc, providing >37% lower RDS(on) and ~25% higher FOM (figure of merit) than the previous OptiMOS 5 generation. An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled, majority-carrier switching device used to switch and amplify signals in power-electronics circuits. As an enhancement-mode MOSFET it conducts when VGS exceeds the gate threshold; when off it blocks voltage between drain and source. It sits inside the hierarchy discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> low-voltage N-channel MOSFET, and it is the workhorse of synchronous rectification, motor drive, and hot-swap circuits. Key features include ultra-low on-state resistance for reduced conduction losses, optimized gate charge for fast switching, a logic-level compatible gate drive in most application ranges, and an avalanche-rated body diode for inductive load robustness. The PG-TDSON-8 (also called TDSON-8 or SuperSO-8) package exposes the drain pad as a thermal pad, dropping junction-to-case thermal resistance to enable high current handling in compact layouts. The OptiMOS 6 60 V technology targets soft-switching topologies such as LLC resonant converters, telecom brick converters, and synchronous rectification in SMPS stages. The platform achieves a ~25% FOM improvement over OptiMOS 5, which directly translates to lower total losses at high switching frequencies where gate-charge loss dominates. Designers benefit from smaller magnetics and higher power density. Typical applications include DC-DC point-of-load conversion in server and telecom bricks, synchronous rectification in 48 V secondary stages, motor drive half-bridges in industrial 24 V systems, battery protection and OR-ing in 12-36 V battery packs, and hot-swap controllers in computing and storage equipment. The 60 V rating provides comfortable headroom for 24 V and 36 V nominal rails with substantial transient margin. When designing with this part, evaluate SOA at the target switching frequency, ensure gate-drive voltage is well above VGS(th) (typically 10 V for full RDS(on)), and provide sufficient PCB copper on the drain pad. The exposed pad is the primary heat path - thermal vias to inner copper planes are strongly recommended. This page synthesizes distributor inventory, parametric alternatives, and practical design notes that complement the manufacturer datasheet and aid in rapid part selection.
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
The Infineon ISC060N10NM6ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 6 100 V thin-wafer technology, housed in a PG-TDSON-8 FL (5.15 x 6.15 mm) surface-mount package. It delivers a continuous drain current of 15 A at Tc-free ambient (Ta) and up to 97 A at case temperature (Tc), with a maximum drain-source voltage of 100 V and a pulsed drain current capability suitable for high-switching-frequency power conversion. A power MOSFET is a voltage-controlled semiconductor switch used to commutate current in switching power supplies, motor drives, and synchronous rectification stages. Within the broader taxonomy, it sits as a child of discrete transistors, which themselves belong to discrete semiconductors and finally to the semiconductor device category. The OptiMOS 6 family represents Infineon's sixth-generation medium-voltage MOSFET platform, optimized to balance conduction loss (RDS(on)), switching loss (Qg, Qgd), and body-diode softness for hard-switched and soft-switched topologies. The ISC060N10NM6ATMA1 specifies a maximum RDS(on) of 6 mΩ at VGS = 10 V, ID = 25 A, a gate threshold voltage of 3.3 V (typical), and a continuous drain dissipation of 3 W at Ta and 125 W at Tc. Its low gate charge and low output charge (Qoss) make it well-suited for high-frequency telecom and server power supplies, where every additional 100 kHz of switching frequency shrinks magnetics. The part is rated for operation across -55 °C to +175 °C junction temperature and is qualified to industrial-grade reliability standards. Typical application domains include 48 V telecom intermediate bus converters, server and datacom point-of-load (POL) regulators, solar micro-inverters, synchronous rectifiers in isolated DC-DC converters, and industrial SMPS bricks. The PG-TDSON-8 FL package combines a small footprint with an exposed thermal pad that drives heat directly into the PCB copper, eliminating the need for an external heatsink in many designs. Designers should pair the ISC060N10NM6ATMA1 with a gate driver rated above 4 V fully-on to ensure full enhancement, and place the gate-source pull-down resistor (typically 10 kΩ) close to the package to prevent unintended turn-on from Miller coupling. The exposed pad must be soldered to a copper pour of at least 25 mm² on each PCB side for thermal relief. This page synthesizes distributor pricing, drop-in alternatives from the Infineon OptiMOS 6 family, and practical layout guidance that is not collected in any single source from the manufacturer datasheet.
ISC0703NLSATMA1 - 60V N-Ch MOSFET, 57A, PG-TDSON-8 | Infineon
The Infineon ISC0703NLSATMA1 is an N-Channel 60 V OptiMOS power MOSFET housed in a PG-TDSON-8 (5x6 mm) surface-mount package with an exposed drain pad. It delivers a continuous drain current of 13 A at Ta=25C and 57 A at Tc=25C, with power dissipation of 3 W at Ta and 44 W at Tc. Built on Infineon's trench MOSFET technology, it targets high-efficiency switching in synchronous rectification, DC-DC converter, and motor drive topologies. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor device that switches or amplifies signals by varying the conductivity of a channel between source and drain terminals. The "N-Channel" designation indicates the conducting carriers are electrons, which provides higher mobility and lower on-resistance than P-Channel equivalents at the same die size. MOSFETs are classified within the discrete semiconductor hierarchy as a sub-category of transistors, and within power-electronics systems they sit alongside IGBTs and thyristors as the primary switching elements. Key differentiating features include its 60 V drain-source breakdown voltage which comfortably covers 12 V and 24 V bus rails with substantial avalanche headroom, a low typical on-resistance (RDS(on)) optimized for synchronous-rectification applications, and a PG-TDSON-8 outline that combines compact 5x6 mm board footprint with a thermally efficient exposed pad. The device is rated for surface-mount reflow assembly and is supplied on 13-inch tape-and-reel for high-volume production lines. Architecturally, ISC0703NLSATMA1 uses Infineon's proprietary trench cell structure that maximizes channel density per unit silicon area, simultaneously reducing on-state conduction loss and gate charge. This combination is critical at high switching frequencies (typically 100 kHz to 1 MHz) where switching losses dominate. The low Qg and Qgd figures support fast turn-on/turn-off transitions, enabling smaller magnetics in isolated and non-isolated converter designs. Typical applications include synchronous rectification in 24 V to 48 V telecom and server bus converters, primary-side switching in telecom DC-DC bricks, BLDC motor drive half-bridges, hot-swap and OR-ing controllers, and battery protection in 12 V/24 V Li-ion packs. In OR-ing and hot-swap circuits, the MOSFET's avalanche rating and safe operating area (SOA) protect the upstream supply during load transients. When designing with this part, ensure the gate-drive voltage is held above the full-enhancement threshold (typically 10 V Vgs) during the entire conduction interval to avoid operating in the linear region where conduction loss rises sharply. Place the gate-source resistor (typically 10 to 100 kOhm) close to the device pins to suppress unintended turn-on from dv/dt-induced Miller current. Thermal copper pour directly under the exposed pad is essential because RDS(on) increases with junction temperature. This page synthesizes distributor pricing, drop-in PG-TDSON-8 alternatives, and practical PCB/thermal design notes not found in the manufacturer datasheet alone, helping engineers select and qualify ISC0703NLSATMA1 for new designs and second-source existing BOMs.
ISC078N12NM6ATMA1 - 120V 85A N-Ch MOSFET 7.8mΩ SuperSO8 | Infineon
The Infineon ISC078N12NM6ATMA1 is a 120 V N-channel OptiMOS 6 power MOSFET housed in a SuperSO8 (TDSON-8) surface-mount package, delivering 85 A continuous drain current at Tc and an ultra-low typical on-resistance of 7.8 mΩ at 10 V VGS. The part is rated for 3 W power dissipation at Ta and 125 W at Tc, making it one of the lowest RDS(on) parts in the 120 V OptiMOS 6 generation for high-current synchronous-rectification and motor-drive stages. What is an OptiMOS 6 power MOSFET? An OptiMOS 6 power MOSFET is Infineon's sixth-generation trench-gate N-channel power-MOSFET family engineered for switched-mode power conversion; it sits inside the broader power-management semiconductor hierarchy of discrete MOSFET -> trench MOSFET -> power MOSFET. The OptiMOS 6 generation targets higher power density, lower switching losses, and improved figure-of-merit (FOM = RDS(on) × Qg) versus earlier generations, enabling smaller magnetics and higher switching frequencies in SMPS, DC-DC, and motor-control designs. Key features of the ISC078N12NM6ATMA1 include 120 V VDS rating suitable for 48 V telecom buses, e-mobility auxiliary rails, and USB-PD/automotive 12-24 V systems; 85 A continuous drain current enabling high-current phases without paralleling; 7.8 mΩ typical RDS(on) at VGS = 10 V minimising conduction losses; and SuperSO8 package with exposed thermal pad providing low thermal resistance (~1 C/W junction-to-case pad typical) for high-power-density layouts. The part supports surface-mount reflow assembly and is qualified for industrial-grade operating temperatures. Architecturally, the ISC078N12NM6ATMA1 uses Infineon's latest-generation N-channel trench-gate technology that reduces both on-resistance per unit area and gate charge, delivering a low figure-of-merit critical for hard-switched and soft-switched topologies. The lower Qg (gate charge) directly translates into reduced driving losses at high switching frequencies, allowing designers to push SMPS frequencies above 500 kHz without exceeding driver losses. Typical applications include 48 V telecom DC-DC converters, e-bike and light electric-vehicle motor drives, solar micro-inverters and string inverters, industrial switched-mode power supplies, and high-current synchronous rectification in server and telecom buck/boost stages. The low RDS(on) also makes it attractive for battery protection and hot-swap controllers in 48 V battery stacks. Designers should note that to realise the 85 A rating, the PCB copper area must provide adequate heat spreading to keep the junction below the maximum rating. The exposed SuperSO8 thermal pad must be soldered to a sufficient copper pour with thermal vias to a heat-spreading inner plane. This page synthesises distributor pricing, drop-in pin-compatible alternatives in the same SuperSO8 footprint, and practical PCB layout notes that supplement the manufacturer datasheet.
ISC0802NLSATMA1 - 100V 150A OptiMOS 5 N-MOSFET | Infineon
The Infineon ISC0802NLSATMA1 is an N-channel power MOSFET rated at 100 V drain-source voltage and 150 A continuous drain current (Tc), built on Infineon's OptiMOS 5 technology and housed in a PG-TDSON-8-7 (SuperSO8 5x6) surface-mount package. It combines an extremely low maximum on-resistance of 3.6 mOhm with low gate charge and superior switching performance, making it ideal for high-current, high-frequency power conversion stages. The device is specified for 2.5 W power dissipation at Ta and 125 W at Tc, with an operating junction temperature up to 175 C. An N-channel power MOSFET is a voltage-controlled majority-carrier device that conducts current between drain and source when a positive gate-to-source voltage exceeds its threshold. In modern DC-DC converters, motor drives, and synchronous rectification stages, low-voltage N-MOSFETs of this class form the high-side and low-side switches; their low Rds(on) directly converts into conduction loss, while low gate charge and output capacitance determine switching loss. Within the broader taxonomy, this part belongs to: MOSFET -> transistor -> discrete semiconductor -> power semiconductor. Key specifications include 100 V VDS, 150 A ID at Tc, 3.6 mOhm maximum Rds(on) at VGS=10 V, and the industry-standard SuperSO8 5x6 footprint with an exposed drain pad for top-side cooling. The OptiMOS 5 process yields improved figure-of-merit (FOM = Rds(on) x Qg) versus older OptiMOS 3 generations, reducing both conduction and switching losses in SMPS, BLDC motor drives, and battery-protection applications. Low Qrr further reduces body-diode reverse-recovery losses in synchronous-rectifier half-bridges. Typical applications for the ISC0802NLSATMA1 include telecom and server 48 V buck converters, synchronous rectification in isolated DC-DC bricks, battery-management system (BMS) protection FETs in 48 V e-mobility, industrial motor-control half-bridges, and high-current hot-swap OR-ing stages. The wide safety margin between 100 V rating and typical 48 V or 60 V rails provides strong avalanche headroom for inductive switching events. When designing with this part, pay close attention to gate-drive voltage (10 V recommended for full Rds(on)), PCB layout to minimize source-inductance loop, and thermal management through the exposed pad. Compared with discrete D2PAK parts, the PG-TDSON-8-7 package offers similar current capability in roughly half the PCB area.
ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon ISC0805NLSATMA1 is an N-channel OptiMOS™ 5 power MOSFET rated at 100 V drain-source voltage with 13 A continuous drain current at TA (Ta=25 °C) and 71 A continuous drain current at TC, housed in the compact PG-TDSON-8-46 surface-mount package. It features an ultra-low typical on-resistance of 7.8 mΩ at 10 V VGS and 10.7 mΩ at 4.5 V VGS, making it one of the most efficient 100 V MOSFETs in the Infineon OptiMOS™ 5 family. The device supports up to 74 W of power dissipation at TC and is targeted at high-frequency switching power conversion stages. An N-channel MOSFET is a voltage-controlled, majority-carrier (in trench MOSFETs) or mixed-carrier transistor in which applying a positive gate-to-source voltage greater than the threshold (typically 2.3 V for this part) inverts the surface of a p-type body region to create a conducting n-channel between source and drain. OptiMOS™ 5 is Infineon's fifth-generation trench-gate silicon process that lowers RDS(on) × Qg figure-of-merit for synchronous-rectification, hard-switching and telecom converter applications. In the broader semiconductor taxonomy the device belongs to: discrete MOSFET → power MOSFET → transistor → discrete semiconductor → semiconductor. Key electrical strengths include a low typical gate charge of 16 nC at VGS=4.5 V, input capacitance of 2.2 nF, and reverse transfer capacitance of 23 pF that together minimize driver loss and enable switching frequencies above 500 kHz. The PG-TDSON-8-46 package with exposed thermal pad delivers an excellent RthJA, allowing the part to sustain 71 A at TC. A 100% avalanche-rated single-shot body-diode ruggedness, logic-level capable 4.5 V drive and RoHS-compliant matte-tin plating round out the feature set. Architecturally the ISC0805NLS uses a stripe-cell OptiMOS™ 5 trench-gate structure with copper-clip-style source contact for low parasitic source inductance, which is critical at high di/dt. The process achieves sub-10 mΩ RDS(on) while keeping the body diode soft-recovery, supporting CCM PFC and full-bridge topologies where conventional MOSFETs suffer from large Qrr. Typical applications include USB-PD and notebook adapters using flyback or active-clamp flyback topology, telecom 48 V buck and bus converters, motor-drive half-bridges for e-mobility, and hot-swap / eFuse protection circuits in industrial 24-60 V systems. The 4.5 V VGS drive also makes it attractive for direct microcontroller-driven low-side switches. When designing with this part, place the gate-drive loop area minimal (gate resistor close to the pin, gate-return directly to the source Kelvin connection where provided) and ensure the PCB copper under the exposed pad reaches 1 oz minimum for thermal performance. The 100 V VDS rating provides comfortable headroom for 24 V and 48 V nominal buses with transients up to the avalanche rating.
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
Infineon ISC080N10NM6ATMA1 is an N-channel power MOSFET from Infineon's OptiMOS™ 6 100V family, rated at 100 V VDS, 13 A continuous ID (Ta) / 75 A pulsed ID (Tc), 3 W power dissipation (Ta) / 100 W (Tc), housed in a surface-mount PG-TDSON-8 FL (TDSON EP) package with on-resistance of 8.05 mΩ typical at 10 V VGS and 20 A ID. It is supplied on 13-inch tape-and-reel packaging and is designed for high-switching-frequency power conversion. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal power switch belonging to the power-MOSFET family and the broader discrete-semiconductor category. In the system hierarchy, it sits below the power-management IC and above the passive component, serving as the active switching element in synchronous rectifiers, buck/boost stages, and motor-drive half-bridges. OptiMOS™ 6 devices specifically target 80-200 V rails and combine Infineon's thin-wafer technology with an optimized cell design to reduce gate charge and reverse-recovery charge. Key differentiating features include a low typical RDS(on) of 8.05 mΩ at VGS=10 V, ID=20 A, a gate threshold around 3.3 V with 36 µA test condition, and an industry-standard TDSON-8 FL footprint that is pin-compatible with widely used 100 V/80 V power-SO-8 alternatives. The device is optimized for high switching frequency, allowing smaller magnetics in isolated and non-isolated DC-DC converters. OptiMOS™ 6 uses Infineon's leading thin-wafer process, achieving a reduced figure-of-merit (FOM = RDS(on) × Qg) compared to OptiMOS™ 5. The exposed-drain pad of the TDSON-8 FL package provides a low thermal resistance path, supporting 100 W dissipation at the case with proper PCB copper area. This architecture suits both hard-switched and soft-switched topologies such as telecom rectifier stages, server VRMs, and solar micro-inverters. Typical applications include 48 V telecom intermediate bus converters, server and datacom point-of-load converters, solar string inverters and micro-inverters, synchronous rectification in SMPS, brushless DC motor drives, and e-bike / battery-management power stages. The combination of low charge and low RDS(on) is especially attractive in high-frequency designs where switching loss dominates. When designing with this MOSFET, ensure the gate driver can supply the peak gate current required to charge the input capacitance within the planned switching transition time. Place the gate-source resistor of 10-100 kΩ close to the IC to prevent inadvertent turn-on from dv/dt coupling on the boot strap node. This page synthesizes distributor pricing, same-brand OptiMOS 6 family alternatives, and practical PCB thermal guidance not collated in the manufacturer datasheet alone.
ISC088N08NM6ATMA1 - 80V 8.8mOhm N-Channel MOSFET | Infineon
The Infineon ISC088N08NM6ATMA1 is an 80 V N-channel power MOSFET built on Infineon's OptiMOS 6 power-transistor technology, housed in a PG-TDSON-8 FL surface-mount package with an exposed thermal pad. It delivers a continuous drain current of 12.1 A at Ta=25 C (59 A at Tc=25 C), a maximum drain-source on-resistance of 8.8 mOhm at VGS=10 V, and a maximum power dissipation of 71 W at Tc=25 C. The part targets >24% lower RDS(on) versus prior generation, optimized for telecom, server, solar, and battery-management power stages. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses a gate electric field to conduct current between the drain and source terminals. Within the discrete-semiconductor hierarchy, MOSFETs sit beneath transistors and above thyristors, and within power electronics they enable synchronous rectification, buck/boost conversion, hot-swap control, and motor drive. OptiMOS 6 represents Infineon's sixth-generation 60-100 V platform, offering improved figure-of-merit (FOM = RDS(on) x Qg) versus prior generations, which directly translates to lower conduction and switching losses. Key features of the ISC088N08NM6 include: 80 V VDS rating for 48 V telecom bus and battery packs, 8.8 mOhm max RDS(on) at VGS=10 V for minimal conduction loss, low gate charge Qg for fast switching, logic-level capable VGS(th) around 2 V for direct MCU drive, and an operating junction temperature up to 175 C. The PG-TDSON-8 FL package provides Kelvin-source connection and an exposed die-attach pad that delivers low thermal resistance, making the part suitable for high-current, high-frequency surface-mount designs. The Infineon OptiMOS 6 process uses trench-gate cell architecture with a refined epitaxial layer, achieving superior RDS(on) per unit area and lower Qgd/Qgs ratios than planar predecessors. This reduces both I2R losses during synchronous rectification and gate-drive losses in hard-switched topologies, making the ISC088N08NM6 well suited to high-frequency buck converters operating at 300 kHz to 1 MHz. Typical applications include 48 V telecom and server point-of-load (POL) converters, solar micro-inverters and DC optimizers, battery-management protection circuits (BMS), synchronous rectification in isolated DC-DC converters, and hot-swap / e-fuse functions in industrial and computing power distribution. When designing with this part, ensure the PCB layout exposes the thermal pad to a sufficient copper pour (>=1 sq inch of 2 oz copper recommended) and that the gate-drive loop area is minimized to prevent ringing. The ISC088N08NM6 is pin-compatible with the broader Infineon OptiMOS 6 PG-TDSON-8 FL family, simplifying second-source qualification. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single reference for sourcing and design validation.
ISC110N12NM6ATMA1 - 120V 9.8mΩ OptiMOS 6 N-MOSFET | Infineon
The Infineon ISC110N12NM6ATMA1 is a 120V N-channel OptiMOS™ 6 power MOSFET with 9.8 mΩ maximum on-resistance, packaged in a SuperSO8 (TDSON-8) surface-mount outline. It is rated for 11A continuous drain current at ambient and up to 62A at case temperature, with a maximum power dissipation of 94W. The device is optimized for high-frequency switching in compact footprints, making it suitable for power tools, chargers, telecom and solar applications where low conduction and switching losses are critical. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between the drain and source terminals. The OptiMOS 6 family represents Infineon's latest generation of medium-voltage MOSFETs (40-300V) using advanced trench technology, sitting within the broader power management semiconductor hierarchy. Compared to older planar MOSFETs, OptiMOS 6 devices reduce on-resistance per die area by up to 30% and lower gate charge for faster switching, directly improving power-converter efficiency and reducing heatsink requirements. Key features include an ultra-low 9.8 mΩ RDS(on) at 10V VGS, a 1.1 nF Ciss, 15.4 nC Qg, and ±20V gate-source rating. The avalanche energy rating of 185 mJ is significantly higher than competing 100V parts, providing robust tolerance to inductive switching transients. The SuperSO8 (TDSON-8) package exposes the die for top-side cooling, enabling a RthJA of approximately 50 C/W on a 1-square-inch copper pour. The OptiMOS 6 cell architecture uses a deep-trench super-junction-like structure with an advanced p-body design to minimize the Miller charge and output capacitance charge. The result is a figure-of-merit (FOM = RDS(on) × Qg) under 200 mΩ·nC, enabling switching frequencies above 500 kHz in hard-switched topologies. This makes the ISC110N12NM6ATMA1 well-suited for small LLC and PFC stages where conventional MOSFETs would dominate the loss budget. Typical applications include brushless DC motor drives in 18V-36V cordless power tools, 48V telecom and server hot-swap controllers, photovoltaic micro-inverters and charge controllers, and high-current synchronous rectification in USB-PD adapters. The wide 120V rating also supports industrial 24V and 36V bus systems with significant transient headroom. When designing with this device, always provide a gate-drive voltage of 10V (the datasheet-specified condition for the 9.8 mΩ rating). The exposed pad must be soldered to a copper pour for thermal and electrical performance. Designers transitioning from older 100V parts should re-evaluate avalanche ruggedness and UIS (Unclamped Inductive Switching) limits. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. XAIPART cross-references Infineon's OptiMOS 6 portfolio against competitor offerings to help engineers identify true drop-in replacements for the SuperSO8 footprint.
ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
The Infineon ISC151N08NM6ATMA1 is an N-channel OptiMOS 6 power MOSFET rated at 80 V drain-source voltage with 37 A continuous drain current (Tc) and a maximum on-resistance of 15.1 mΩ, housed in a surface-mount PG-TDSON-8 FL package with an exposed thermal pad. The device delivers >24% lower RDS(on) than the prior generation per the Infineon product page, making it well suited for high-efficiency switching in telecom and battery management applications. The ATMA1 suffix denotes tape-and-reel packaging for high-volume SMT assembly. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an electric field at the gate to conduct current between drain and source terminals. N-channel MOSFETs like the ISC151N08NM6 are the dominant switching element in modern DC-DC converters, motor drives, and load switches because their low on-resistance minimizes conduction loss. Within the taxonomy, this part belongs to the discrete semiconductor family, specifically the OptiMOS 6 80 V medium-voltage tier, optimized for synchronous rectification and primary-side switching. Key features include 9.2 A continuous drain current at TA=25 °C, 37 A at TC=25 °C, 3 W power dissipation at TA and 48 W at TC, a 3.5 V typical gate threshold voltage, and a logic-level compatible gate drive. The PG-TDSON-8 FL package provides an exposed pad that drops thermal resistance to the PCB copper pour, enabling compact designs without an external heatsink at moderate duty cycles. The OptiMOS 6 platform uses Infineon's latest trench cell architecture to balance low RDS(on), low gate charge (Qg), and low output charge (Qoss). These figures directly impact switching loss and dead-time requirements in half-bridge topologies, allowing higher switching frequencies and smaller magnetics in downstream converters. Typical applications include 48 V telecom isolated DC-DC bus converters, battery management system (BMS) protection FETs, synchronous rectifier stages in server and telecom supplies, hot-swap / eFuse controllers, and motor drive half-bridges in industrial automation. The combination of 80 V rating and 15 mΩ RDS(on) places it in the sweet spot for 24 V/36 V/48 V bus architectures. When designing with this part, ensure the gate drive produces at least 10 V VGS to fully enhance the channel and minimize RDS(on); a 4.7 Ω to 10 Ω gate resistor typically damps parasitic ringing. Keep the source-loop and gate-loop PCB areas minimal to control voltage overshoot and EMI. This page synthesizes distributor pricing, drop-in alternatives from Infineon and competitors, and practical design notes not found in the manufacturer datasheet.
ISC240P06LMATMA1 - 60V P-Channel OptiMOS MOSFET | Infineon
The Infineon ISC240P06LMATMA1 is a P-channel power MOSFET built on Infineon's OptiMOS trench technology, rated for -60 V drain-source voltage and 59 A continuous drain current (Tc) in a thermally enhanced PG-TDSON-8 FL (SuperSO8 5x6) surface-mount package. With a maximum on-resistance of 24 mΩ at VGS = -10 V and a maximum power dissipation of 188 W (Ta-rated per the manufacturer datasheet), the part targets high-current load-switch and high-side P-channel switching roles where conventional N-channel devices would require an additional charge pump. A P-channel MOSFET is a minority-carrier enhancement-mode field-effect transistor in which the source is tied to the more positive rail and the channel conducts when the gate is pulled below the source by roughly 10 V. P-channel parts belong to the MOSFET -> discrete semiconductor -> power-switch transistor hierarchy, and they complement N-channel MOSFETs in half-bridge and high-side switch topologies where driving an N-channel above the input rail would otherwise require a bootstrap or charge-pump circuit. By selecting a P-channel for the high side, the gate-drive requirement is simplified to a ground-referenced logic signal, reducing overall BOM cost and PCB area. Key parametric features include a low typical gate charge (Qg) consistent with the OptiMOS P-channel 60 V family, logic-level compatible VGS(th), avalanche-rated single-pulse robustness, and an exposed die-attach pad (FL = flip-chip leadless) that delivers a junction-to-case thermal resistance compatible with 188 W class dissipation when properly soldered to a multi-layer copper PCB. The device is rated for operation across the -55 °C to +175 °C junction temperature range and is qualified to JEDEC moisture sensitivity level 1. In typical application circuits the ISC240P06LMATMA1 is wired source-to-rail with the drain feeding the load, and the gate is driven by a low-side gate driver or microcontroller GPIO that swings between 0 V and VCC. Because conduction loss scales with I²×RDS(on), the 24 mΩ maximum on-resistance enables efficient switching at currents up to ~30 A continuous without aggressive thermal management. When designing with this part, observe Infineon's PCB layout recommendations: stitch the FL exposed pad to a continuous copper pour on the top and inner layers with at least 6 thermal vias, and ensure the source Kelvin connection is used for accurate current sensing. Use a 10 kΩ gate-to-source pull-up resistor to hold the switch off during MCU reset. Compared with N-channel equivalents, the trade-off is approximately 2× higher RDS(on) for the same silicon area and a tighter safe operating area at high VDS. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical PCB thermal design notes not consolidated on any single manufacturer or distributor page.
ISC300N20NM6ATMA1 - 200V 44A OptiMOS 6 N-Channel MOSFET | Infineon
The Infineon ISC300N20NM6ATMA1 is an N-channel power MOSFET built on Infineon's advanced OptiMOS 6 200V technology, delivering a continuous drain current of 44 A at TC, with a maximum drain-source voltage of 200 V and an ultra-low typical on-resistance of 27 mΩ, packaged in a compact surface-mount PG-TDSON-8 (TDSON-8) outline. Designed as the modern successor to legacy OptiMOS 3 and OptiMOS FD products, this part delivers an excellent figure-of-merit (FOM = RDS(on) x Qg) for high-frequency switching topologies. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power conversion, motor drive, and load management applications. The OptiMOS 6 family represents Infineon's latest 200V generation, optimized for both hard-switching and soft-switching topologies. Compared with older 200V MOSFET families, OptiMOS 6 reduces conduction and switching losses simultaneously, which translates directly to higher efficiency and smaller magnetics in switched-mode power supplies, half-bridges, and synchronous rectification stages. Key features include a 200 V VDS rating, 44 A continuous drain current (TC), low RDS(on) of 27 mΩ typical, 3 W power dissipation (Ta) and 136 W (Tc), plus a logic-level gate drive capability compatible with 4.5 V VGS(th). The PG-TDSON-8 package offers an exposed drain pad for direct PCB heatsinking, achieving a thermal resistance that supports high continuous current in a compact footprint. Optimized cell structure minimizes body-diode reverse-recovery charge, enabling robust operation in half-bridge and full-bridge configurations. Typical applications include telecom and server SMPS, industrial motor drives and solar inverters, synchronous rectification in isolated DC-DC converters, Class-D audio amplifiers, hot-swap and OR-ing controllers, and battery protection circuits in 48V e-mobility and e-bike systems. The 200V drain-source rating provides ample headroom for 100V and 150V bus designs. When designing with this MOSFET, ensure the gate drive voltage is fully enhanced (10 V VGS recommended for lowest RDS(on)) and use Kelvin-source connection when available to suppress source-inductance induced ringing. Thermal management via the exposed drain pad is essential above 10 W dissipation.
ISC800P06LMATMA1 - 60V P-CH MOSFET, 19.6A, TDSON-8 | Infineon
The Infineon ISC800P06LMATMA1 is a P-channel OptiMOS power MOSFET rated for -60 V VDS, continuous drain current up to 19.6 A (at TC), and 83 W power dissipation (at TC), housed in a surface-mount PG-TDSON-8 (TDSON EP) package with an exposed thermal pad. It is part of Infineon's ISC800P06LM family targeting high-efficiency load switching and reverse-polarity protection in 12 V / 24 V automotive and industrial systems. A P-channel MOSFET is a type of field-effect transistor in which the majority charge carriers are holes (positive), making it inherently suitable for high-side switching where the load is tied to ground and the MOSFET sits between the supply rail and the load. Compared to N-channel devices used as high-side switches, a P-channel MOSFET eliminates the need for a charge pump or bootstrap circuit to drive the gate above the supply rail, simplifying the gate driver and reducing BOM cost. Within the broader taxonomy, P-channel MOSFETs belong to power MOSFETs -> discrete semiconductors -> semiconductors. Key features of the ISC800P06LMATMA1 include an extremely low on-state resistance (RDS(on) in the milliohm range), a logic-level compatible gate threshold suitable for direct microcontroller GPIO driving, avalanche-rated switching, and an operating junction temperature up to 175 C. The TDSON-8 footprint with exposed pad provides low thermal resistance to the PCB copper, enabling high continuous current in a compact 5 mm x 6 mm outline. The ISC800P06LMATMA1 uses Infineon's advanced trench MOSFET process technology, which minimizes cell pitch and reduces conduction and switching losses compared to planar P-channel devices. The result is higher power density, lower gate charge (Qg), and improved dv/dt immunity for harsh industrial and automotive environments. Typical applications include high-side load switching in 12 V / 24 V automotive ECUs, battery protection and reverse-polarity blocking in industrial PLCs, USB power distribution, motor drive half-bridges, and hot-swap controllers where a low-loss P-channel switch is required. The logic-level gate threshold also makes it suitable for direct 3.3 V or 5 V MCU control. When designing with this device, ensure that the maximum VDS rating of -60 V is not exceeded under transient conditions such as load-dump (verify against ISO 7637-2 if applicable). The exposed pad must be soldered to a sufficient copper area (typically >= 1 sq cm) to achieve the rated continuous current. This page synthesizes distributor stock and pricing from DigiKey/Mouser/LCSC, parametric comparisons against drop-in alternatives (same Infineon TDSON-8 family), and practical PCB/thermal design guidance that complements the Infineon datasheet.