ISC045N03L5SATMA1 - 30V 4.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
N.º da peça: ISC045N03L5SATMA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.92 | $0,92 |
| 10 | $0.83 | $8,30 |
| 100 | $0.74 | $74,00 |
| 500 | $0.66 | $330,00 |
| 1.000 | $0.58 | $580,00 |
| 3.000 | $0.51 | $1.530,00 |
ISC045N03L5SATMA1 Visão geral
A power MOSFET is a voltage-controlled semiconductor switch that regulates current flow between drain and source terminals via an isolated gate electrode. N-channel MOSFETs are the workhorse of low-voltage (<100 V) synchronous rectification, DC-DC conversion, and hot-swap switching because electrons have higher mobility than holes, yielding lower RDS(on) per unit silicon area. Modern sub-40 V trench MOSFETs such as the ISC045N03L5SATMA1 form the synchronous rectification stage in buck converters, motor-drive half-bridges, and OR-ing circuits where efficiency, thermal performance, and PCB footprint are equally critical.
Key features of the ISC045N03L5SATMA1 include 4.5 mΩ maximum RDS(on) at 10 V VGS, threshold voltage of 2 V typical at 250 µA ID, total gate charge (Qg) of 13 nC at VGS = 10 V, and input capacitance (Ciss) of 870 pF at 15 V VDS. These metrics translate directly to lower conduction and switching losses, enabling higher-frequency operation with smaller magnetics and cooler thermal rise. The SuperSO8 5x6 footprint exposes a top-side thermal pad that drops the junction-to-case thermal resistance dramatically versus standard SO-8.
The device targets high-frequency, low-loss switching: synchronous buck converters in telecom and server DC-DC point-of-load regulators, hot-swap controllers on 12 V/24 V distribution rails, battery protection circuits for multi-cell Li-ion packs, and motor-drive half-bridges in 12 V/24 V brushless DC fans, pumps, and e-mobility peripherals. The combination of 30 V rating, low RDS(on), and small Qg keeps both conduction and driver losses minimal.
When designing with this part, size the gate-driver so VGS swings fully between 10 V (enhancement) and 0 V (full cutoff); partial enhancement at 4.5 V leaves the MOSFET in the linear region with high dissipation. Place a 1 Ω gate resistor and a local 100 nF + 10 µF bypass on VCC of the gate driver. Use Kelvin-source return to the driver ground to suppress source-inductance-induced turn-off ringing.
Alternativas drop-in para ISC045N03L5SATMA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com ISC045N03L5SATMA1 (mesmo formato e footprint) — diferindo em Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Part Number.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
BSZ0901NSIATMA1
✅ Drop-In✓ Em estoque
$0.34 / unidade
Ver ficha técnica →ISZ028N03LF2SATMA1
✅ Drop-In✓ Em estoque
$0.49 / unidade
Ver ficha técnica →BSC076N04NDATMA1
✅ Drop-In✓ Em estoque
$0.82 / unidade
Ver ficha técnica →IRFH5015TRPBF
✅ Drop-In✓ Em estoque
$0.62 / unidade
Ver ficha técnica →BSC019N04LSTATMA1
✅ Drop-In✓ Em estoque
$1.21 / unidade
Ver ficha técnica →ISC045N03L5SATMA1 Classificações máximas e características elétricas
| Manufacturer | Infineon Technologies |
| Part Number | ISC045N03L5SATMA1 |
| Tipo de transistor | N-Channel MOSFET |
| Technology | OptiMOS 5 / Trench |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A |
| Continuous Drain Current (ID) at TC=25°C | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 µA |
| Gate-Source Voltage (VGS) max | ±20 V |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25°C | 2.5 W |
| Power Dissipation (PD) at TC=25°C | 30 W |
| Encapsulamento | SuperSO8 5x6 (PG-TDSON-8-6) |
| Tipo de montagem | Surface Mount |
| Faixa de temperatura de operação | -55 °C to +150 °C |
| Status RoHS | Compliant |
Configuração de pinos do ISC045N03L5SATMA1
| Pino 1 | Gate — Gate drive input (20V max VGS) |
| Pino 2 | Source — Source (signal return) |
| Pino 3 | Source — Source (signal return) |
| Pino 4 | Source — Source (signal return) |
| Pino 5 | Source — Source (signal return) |
| Pino 6 | Drain — Drain (power input) |
| Pino 7 | Drain — Drain (power input) |
| Pino 8 | Drain — Drain (power input) |
Área de Operação Segura (DC, TC=25°C)
Aplicações típicas
ISC045N03L5SATMA1 é adequado para 6 aplicaçãos: 12 V Synchronous Buck Converter (POL), Hot-Swap / OR-ing on 12-24 V Distribution, Brushless DC (BLDC) Motor Drive Half-Bridge, Battery Protection / BMS Discharge FET, USB-PD / Fast-Charge Wall Adapter, Telecom / Server Point-of-Load Regulator.
12 V Synchronous Buck Converter (POL)
The ISC045N03L5SATMA1 serves as the low-side synchronous rectifier in 12 V-to-1 V point-of-load buck converters where conduction and switching losses both matter. Its 4.5 mΩ RDS(on) keeps low-side loss under 1% of output power at 20 A, while the 13 nC total gate charge permits switching at 300-500 kHz with a small gate driver. The SuperSO8 thermal pad dumps heat directly into inner PCB copper layers, allowing 25 A continuous in 1 sq-in of 2 oz board area.
Recomendado
Hot-Swap / OR-ing on 12-24 V Distribution
In 12 V and 24 V hot-swap and OR-ing applications the ISC045N03L5SATMA1 acts as the main disconnect switch during board insertion. The 30 V VDS gives 18 V of headroom over nominal 24 V, absorbing moderate transient spikes without avalanche. With 18 A continuous at TA = 25 °C and 4.5 mΩ RDS(on), steady-state dissipation at 15 A is about 1 W - within the SuperSO8 thermal envelope when mounted on 1 sq-in of copper.
Recomendado
Brushless DC (BLDC) Motor Drive Half-Bridge
The ISC045N03L5SATMA1 is well suited to 12 V/24 V BLDC motor half-bridges for fans, pumps, e-bike peripherals, and small drones. With 18 A continuous at room temperature and fast switching edges from low Qg, it supports PWM frequencies of 25-50 kHz with low switching loss. The SuperSO8 5x6 footprint allows compact three-phase bridge layouts, and the ±20 V VGS tolerance survives the negative transients common on motor windings.
Recomendado
Battery Protection / BMS Discharge FET
In multi-cell Li-ion battery packs the ISC045N03L5SATMA1 functions as the low-side discharge MOSFET. Its 30 V VDS comfortably handles 12 V (3S) and 16.8 V (4S) packs, while the 4.5 mΩ on-resistance keeps discharge loss under 1% even at 20 A continuous. The small SuperSO8 footprint saves board area in slim 18650/21700 pack designs, and the OptiMOS 5 process yields tight threshold tolerance for predictable BMS turn-on characteristics.
Recomendado
USB-PD / Fast-Charge Wall Adapter
Compact USB-PD adapters up to 100 W use the ISC045N03L5SATMA1 as the primary-side or secondary-side synchronous rectifier in flyback or buck topologies. Its 30 V VDS rating suits 24 V output rails, and the 13 nC Qg minimizes drive loss at 100-200 kHz switching. Low RDS(on) improves overall efficiency by 1-2% versus competing 8-10 mΩ parts, easing thermal design in sealed adapters.
Recomendado
Telecom / Server Point-of-Load Regulator
In 48 V-to-12 V intermediate bus converters and downstream POL regulators, the ISC045N03L5SATMA1 forms the synchronous rectifier stage on the 12 V bus. The 30 V VDS gives 18 V margin over 12 V, and the SuperSO8 thermal pad handles 15-20 A continuous in server airflow. Low Qg permits 400 kHz switching, allowing small inductors that fit dense POL arrays next to FPGAs and ASICs.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para ISC045N03L5SATMA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | BSZ0901NS | ISZ028N03LF2SATMA1 | BSC076N04NDATMA1 | IRFH5015TRPBF | BSC019N04LSTATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | SuperSO8 5x6 (PG-TDSON-8-6) | SuperSO8 5x6 (PG-TDSON-8-6) - same | SuperSO8 5x6 (PG-TDSON-8-6) - same | SuperSO8 5x6 (PG-TDSON-8-6) - same | PQFN-8 (5x6) - same footprint | SuperSO8 5x6 (PG-TDSON-8-6) - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 40 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 4.5 mΩ | 9 mΩ | 2.8 mΩ | 7.6 mΩ | 15 mΩ | 1.9 mΩ |
| Continuous Drain Current (TA=25°C) | 18 A | 12 A | 20 A | 14 A | 10 A | 25 A |
| Total Gate Charge (Qg) | 13 nC | 9 nC | 8 nC | 16 nC | 22 nC | 20 nC |
| VGS(th) | 2 V | 1.8 V | 1.7 V | 2 V | 2.5 V | 1.8 V |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | StrongIRFET (Trench) | OptiMOS 5 (Trench) |
| Approx. Unit Price (qty 1) | $0.92 | $0.65 | $1.05 | $0.85 | $0.55 | $1.40 |
Principais diferenciais
- Best-in-class RDS(on) × Qg figure of merit for 30 V OptiMOS 5 family (vs BSZ0901NS)
- 30 V VDS optimized for 12 V/24 V bus applications (vs BSC076N04NDATMA1)
- SuperSO8 5x6 footprint with 18 A TA-rated current (vs IRFH5015TRPBF)
Notas de projeto
Estimated: At 20 A continuous drain current with the SuperSO8 5x6 thermal pad soldered to 1 sq-in of 2 oz copper on a 4-layer FR-4 board, junction-to-ambient thermal resistance is approximately 50 C/W. Steady-state power dissipation P = I² × RDS(on) = 20² × 0.0045 = 1.8 W, yielding a junction temperature rise of about 90 °C above ambient. For sustained 18 A operation in enclosed adapters, add thermal vias under the exposed pad and a copper pour on inner layers to drop θJA below 40 C/W.
Route the gate-drive trace on the top layer with at least 20 mil width; keep the gate trace away from the drain switching node to minimize parasitic Cgd coupling. Use Kelvin-source connection by tying the gate-driver ground return directly to the source pin nearest pin 2. Place a 1 Ω gate resistor and a local 100 nF + 10 µF ceramic bypass on the gate-driver VCC to suppress VGS ringing at turn-off. The exposed thermal pad must be soldered to a continuous copper plane with thermal vias.
Do not operate with VGS below 6 V at high current - the MOSFET enters the linear region and dissipates excessive power; ensure the gate-driver swing reaches 10 V. Avoid exceeding 20 V VGS transient, which can rupture the gate oxide. Do not parallel without gate-source resistors on each part, otherwise oscillation from threshold mismatch can damage the devices. Watch SOA curves carefully at low VDS/high ID combinations - pulsed current must remain within the SOA envelope.
The 870 pF Ciss and 13 nC Qg of the ISC045N03L5SATMA1 require a gate driver capable of sourcing/sinking at least 1 A peak for sub-10 ns switching transitions. Without sufficient drive strength, switching loss rises linearly with transition time. Place a 4.7-10 Ω gate resistor to dampen ringing from package+PCB inductance (~5 nH combined). At >100 kHz switching, validate VDS waveforms with a scope probe rated for the application, not standard long-ground clips.
Informações de conformidade
RoHS compliant per Infineon product page. Not AEC-Q100 qualified; for automotive-grade equivalents consider Infineon BSZ0901NS or similar automotive-screened StrongIRFET variants.
