ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
N.º da peça: ISC151N08NM6ATMA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.38 | $138,00 |
| 500 | $1.15 | $575,00 |
| 1.000 | $0.95 | $950,00 |
| 3.000 | $0.78 | $2.340,00 |
ISC151N08NM6ATMA1 Visão geral
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an electric field at the gate to conduct current between drain and source terminals. N-channel MOSFETs like the ISC151N08NM6 are the dominant switching element in modern DC-DC converters, motor drives, and load switches because their low on-resistance minimizes conduction loss. Within the taxonomy, this part belongs to the discrete semiconductor family, specifically the OptiMOS 6 80 V medium-voltage tier, optimized for synchronous rectification and primary-side switching.
Key features include 9.2 A continuous drain current at TA=25 °C, 37 A at TC=25 °C, 3 W power dissipation at TA and 48 W at TC, a 3.5 V typical gate threshold voltage, and a logic-level compatible gate drive. The PG-TDSON-8 FL package provides an exposed pad that drops thermal resistance to the PCB copper pour, enabling compact designs without an external heatsink at moderate duty cycles.
The OptiMOS 6 platform uses Infineon's latest trench cell architecture to balance low RDS(on), low gate charge (Qg), and low output charge (Qoss). These figures directly impact switching loss and dead-time requirements in half-bridge topologies, allowing higher switching frequencies and smaller magnetics in downstream converters.
Typical applications include 48 V telecom isolated DC-DC bus converters, battery management system (BMS) protection FETs, synchronous rectifier stages in server and telecom supplies, hot-swap / eFuse controllers, and motor drive half-bridges in industrial automation. The combination of 80 V rating and 15 mΩ RDS(on) places it in the sweet spot for 24 V/36 V/48 V bus architectures.
When designing with this part, ensure the gate drive produces at least 10 V VGS to fully enhance the channel and minimize RDS(on); a 4.7 Ω to 10 Ω gate resistor typically damps parasitic ringing. Keep the source-loop and gate-loop PCB areas minimal to control voltage overshoot and EMI.
This page synthesizes distributor pricing, drop-in alternatives from Infineon and competitors, and practical design notes not found in the manufacturer datasheet.
Alternativas drop-in para ISC151N08NM6ATMA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com ISC151N08NM6ATMA1 (mesmo formato e footprint) — diferindo em Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Product Family.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
ISC037N12NM6ATMA1
✅ Drop-In✓ Em estoque
$3.62 / unidade
Ver ficha técnica →ISZ230N10NM6ATMA1
✅ Drop-In✓ Em estoque
$0.71 / unidade
Ver ficha técnica →ISC015N06NM5LF2ATMA1
✅ Drop-In✓ Em estoque
$2.21 / unidade
Ver ficha técnica →ISC151N08NM6ATMA1 Classificações máximas e características elétricas
| Tipo de transistor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (TA=25°C) | 9.2 A |
| Corrente de dreno contínua (TC=25°C) | 37 A |
| Power Dissipation (TA) | 3 W |
| Power Dissipation (TC) | 48 W |
| On-Resistance RDS(on) max | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | 3.5 V |
| Technology | OptiMOS 6 |
| Encapsulamento | PG-TDSON-8 FL |
| Tipo de montagem | Surface Mount |
| Número de pinos | 8 |
| Channel Mode | Enhancement |
| Temperatura de operação | -55 °C to +175 °C |
| Status RoHS | Compliant |
Configuração de pinos do ISC151N08NM6ATMA1
| Pino 1 | GATE — Gate drive input |
| Pino 2 | DRAIN — Drain terminal (connected to exposed pad) |
| Pino 3 | DRAIN — Drain terminal (connected to exposed pad) |
| Pino 4 | NC — Not connected (per datasheet) |
| Pino 5 | SOURCE — Source terminal |
| Pino 6 | SOURCE — Source terminal |
| Pino 7 | DRAIN — Drain terminal (connected to exposed pad) |
| Pino 8 | DRAIN — Drain terminal (connected to exposed pad) |
ISC151N08NM6 Área de Operação Segura (DC)
Aplicações típicas
ISC151N08NM6ATMA1 é adequado para 6 aplicaçãos: 48 V Telecom Isolated DC-DC Converter, Battery Management System (BMS) Protection FET, Synchronous Rectifier in Server PSU, Hot-Swap / eFuse Controller Switch, Industrial Motor Drive Half-Bridge, Solar Micro-Inverter / Power Optimizer.
48 V Telecom Isolated DC-DC Converter
The ISC151N08NM6ATMA1 fits primary-side switching in 48 V telecom isolated DC-DC converters because its 80 V VDS rating provides >66% headroom above the 48 V nominal bus, comfortably absorbing transients from cable inductance and load steps. With 15.1 mΩ RDS(on) and 37 A continuous drain current at TC, it handles full-load currents typical of 600-1200 W brick converters without exceeding thermal limits when properly heat-sunk. Placed on the primary-side high-voltage rail of a half-bridge or full-bridge topology, the device's OptiMOS 6 low Qg and Qoss reduce switching loss enough to support 100-200 kHz switching, shrinking the isolation transformer footprint. Compared with older 80 V MOSFETs, the >24% lower RDS(on) cuts conduction loss across the load range, directly improving converter efficiency at 50% load where telecom operators typically measure.
Recomendado
Battery Management System (BMS) Protection FET
The ISC151N08NM6ATMA1 serves as a low-side protection FET in 48 V Li-ion battery management systems where its 80 V VDS rating handles pack voltages up to 56 V with margin, and its 37 A continuous current supports 1.5-2 kW discharge paths without active cooling. The 15.1 mΩ RDS(on) dissipates under 1 W at 8 A continuous load, allowing operation without heatsink in sealed battery enclosures. Infineon's OptiMOS 6 cell technology provides avalanche-rated SOA critical for short-circuit events, while the PG-TDSON-8 FL package's exposed pad simplifies thermal coupling to the inner copper layer of the BMS PCB. Designers should add a TVS diode across drain-source for inductive kick protection during disconnect events.
Recomendado
Synchronous Rectifier in Server PSU
The ISC151N08NM6ATMA1 is used as the synchronous rectifier FET on the secondary side of 48 V-to-12 V server power supply units, replacing Schottky diodes to gain a >1.5% efficiency boost across the load curve. Its 80 V VDS rating exceeds typical 12 V rails by 6x margin, ensuring robustness during transient ringing and load-dump events on the secondary side. The 15.1 mΩ RDS(on) at VGS=10 V keeps conduction loss under 0.5 W at 6 A output, while OptiMOS 6's body-diode reverse recovery characteristics minimize dead-time loss in CCM operation. Layout tip: minimize the source-loop inductance between this FET and the primary-side control IC gate driver to prevent gate overshoot.
Recomendado
Hot-Swap / eFuse Controller Switch
The ISC151N08NM6ATMA1 acts as the main pass element in 48 V hot-swap and eFuse circuits where its 80 V VDS handles inrush transients and backplane faults. The 37 A continuous current rating supports 1.5-2 kW board-level power feeds common in telecom and server backplanes, while the 15.1 mΩ RDS(on) keeps steady-state dissipation manageable. Infineon's OptiMOS 6 SOA in linear mode allows the FET to dissipate fault energy for several milliseconds during current-limit foldback, simplifying eFuse controller design. Add a current-sense resistor and TVS clamp across drain-source for full hot-swap protection.
Recomendado
Industrial Motor Drive Half-Bridge
The ISC151N08NM6ATMA1 is deployed in the low-side or high-side position of 48 V industrial motor drive half-bridges for AGVs, robotics, and small servo drives. With 37 A continuous current and 80 V VDS rating, it handles 1-2 kW motor power with margin, while the 15.1 mΩ RDS(on) limits conduction loss during PWM operation at 20-50 kHz switching frequencies. The PG-TDSON-8 FL package's low thermal resistance enables direct PCB cooling without external heatsink in compact industrial designs. Designers should include a gate-source resistor (10-100 kΩ) to prevent unintended turn-on from Miller current during the opposite FET's switching edge.
Recomendado
Solar Micro-Inverter / Power Optimizer
The ISC151N08NM6ATMA1 fits as the switching element in 60-80 V solar micro-inverter and DC power optimizer stages where its 80 V VDS rating handles open-circuit PV panel voltages up to ~50 V with adequate derating margin. The 15.1 mΩ RDS(on) and OptiMOS 6 trench cell technology deliver >98% peak efficiency in synchronous buck-boost topologies, while the PG-TDSON-8 FL package's exposed pad enables efficient bottom-side cooling in IP67 outdoor enclosures. For higher-power strings, parallel multiple ISC151N08NM6ATMA1 devices with matched gate-drive timing to share current without thermal runaway.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para ISC151N08NM6ATMA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | ISC037N12NM6ATMA1 | ISZ230N10NM6ATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 FL | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same |
| Drain-Source Voltage (VDS) | 80 V | 120 V | 100 V | 60 V |
| Technology | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Principais diferenciais
- OptiMOS 6 platform with >24% lower RDS(on) than prior generation (vs ISC037N12NM6ATMA1)
- Wide VDS margin at 80 V for 48 V telecom buses (vs ISC015N06NM5LF2ATMA1)
- PG-TDSON-8 FL package with exposed thermal pad (vs BSC019N08NS5ATMA1)
Notas de projeto
Estimated: at continuous TC=25 °C with 48 W power dissipation and Infineon's published PG-TDSON-8 FL thermal resistance of ~50 °C/W junction-to-case, the junction temperature reaches the 175 °C maximum with only ~25 °C margin. Designers must de-rate to TC=85 °C or lower for reliability (industry rule: keep Tj ≤ 125 °C at full load). Mount the exposed pad onto a copper area of at least 100 mm² with thermal vias to the inner layer for proper heat extraction. The 3 W ambient rating implies the device dissipates only ~3 W before reaching Tj=150 °C in still air without a heatsink - always check thermal in actual PCB geometry.
Minimize the source-loop inductance between the ISC151N08NM6ATMA1 source pins and the gate-driver ground return to prevent gate overshoot and ringing during switching transients. Use a 4.7 Ω to 10 Ω gate resistor to damp parasitic oscillation without slowing the switching edge excessively. Keep the drain-source snubber loop area under 10 mm² to limit VDS overshoot below 100 V (20% above the 80 V rating) during hard turn-off events.
Do not operate the ISC151N08NM6ATMA1 with VGS below 8 V - the RDS(on) specification of 15.1 mΩ assumes VGS=10 V. At VGS=4.5 V the device may still turn on but RDS(on) increases 2-3x, causing thermal runaway in high-current designs. Add a 10-100 kΩ gate-source resistor to prevent unintended turn-on from Miller current during the complementary FET's switching edge in half-bridge topologies. Finally, verify that the exposed pad is properly soldered - a dry joint can increase thermal resistance by 30-50%.
Informações de conformidade
RoHS compliant per Infineon product page and DigiKey listing. Standard grade - not AEC-Q100 qualified; for automotive designs use AEC-Q100 qualified OptiMOS 6 variants. REACH compliance per EU declaration.
