IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon
N.º da peça: IPD90N06S404ATMA2 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.27 | $1,27 |
| 10 | $1.18 | $11,80 |
| 100 | $0.96 | $96,00 |
| 500 | $0.84 | $420,00 |
| 1.000 | $0.72 | $720,00 |
IPD90N06S404ATMA2 Visão geral
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to handle high currents and voltages in power-conversion circuits. MOSFETs are a subclass of field-effect transistors within discrete semiconductors, occupying a hierarchy of: power MOSFET -> MOSFET -> FET -> transistor -> discrete semiconductor. They are the workhorse building blocks of switching power supplies, motor drives, and automotive electronic control units (ECUs).
Key features of the IPD90N06S404ATMA2 include 100% avalanche-tested ruggedness, MSL1 rating up to 260 °C peak reflow, 175 °C maximum operating temperature, and Green Product (RoHS-compliant) construction. The device is engineered for the lowest switching and conduction power losses in its class, enabling highest thermal efficiency in 12 V automotive and 24 V industrial bus systems.
Technically, the part uses Infineon's OptiMOS silicon process, which minimizes gate charge (Qg) and figure-of-merit (FOM = RDS(on) × Qg) for high-frequency switching. The 3.8 mΩ on-resistance at VGS = 10 V keeps conduction losses low in high-current paths such as ABS modules, electronic power steering, and DC-DC converter high-side switches.
Typical applications include automotive 12 V powertrain systems (H-bridge motor drives, solenoid switching), 48 V mild-hybrid DC-DC stages, industrial switching power supplies, battery management system (BMS) protection circuits, and high-current OR-ing. The automotive-grade qualification makes it suitable for under-hood environments with sustained high junction temperatures.
Designers should select a low-ESR gate driver capable of sourcing/sinking >1 A peak to switch the device quickly and avoid linear-region heating. A 10 Ω gate resistor is typical to dampen parasitic ringing, and a Kelvin-source PCB layout is recommended when very low RDS(on) is required at high current.
This page synthesizes distributor pricing, AEC-Q101 drop-in alternatives, and automotive-layout design notes that complement the manufacturer datasheet.
Alternativas drop-in para IPD90N06S404ATMA2 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IPD90N06S404ATMA2 (mesmo formato e footprint) — diferindo em MSL Level, Drain-Source Voltage (VDS), Package, Technology, Automotive Qualification.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IPD90N06S4L04ATMA2
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
IPD90N06S404ATMA2 Classificações máximas e características elétricas
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tc) | 90 A |
| Power Dissipation (PD, Tc) | 150 W |
| On-Resistance (RDS(on)) | 3.8 mΩ (typ) at VGS = 10 V |
| Encapsulamento | PG-TO252-3-11 (DPAK), 3-pin surface mount |
| Operating Temperature (TJ max) | 175 °C |
| Peak Reflow Temperature | 260 °C (MSL1) |
| Avalanche Rating | 100% Avalanche Tested |
| Automotive Qualification | AEC-Q101 |
| Technology | OptiMOS |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant (Green Product) |
| Nível MSL | MSL1 |
| Polarity | Single N-Channel |
Configuração de pinos do IPD90N06S404ATMA2
| Pino 1 | Gate (G) — Gate control input - drive with 10V to fully enhance the MOSFET |
| Pino 2 | Drain (D) — Drain terminal - connected to the exposed tab; main current path |
| Pino 3 | Source (S) — Source terminal - typically connected to ground in low-side switching applications |
Área de Operação Segura (SOA)
Aplicações típicas
IPD90N06S404ATMA2 é adequado para 6 aplicaçãos: Automotive 12V H-Bridge Motor Drive, 48V Mild-Hybrid DC-DC Converter, Industrial 24V Brushed DC Motor Control, Automotive ABS Module Solenoid Driver, Battery Management System (BMS) Protection, High-Current OR-ing / Power Mux.
Automotive 12V H-Bridge Motor Drive
The IPD90N06S404ATMA2 is well-suited for automotive 12 V H-bridge motor drive stages used in electronic power steering (EPS), window lifters, and seat adjusters. Its 90 A continuous drain current handles the inrush and stall currents of brushed DC motors, while the 3.8 mΩ RDS(on) keeps conduction losses low during PWM switching at 20-25 kHz. The AEC-Q101 qualification ensures reliability under hood-temperature cycling from -40 °C to +125 °C ambient, and the 175 °C maximum junction temperature provides thermal margin during stall conditions. Designers typically configure two TO-252 devices per H-bridge leg (high-side + low-side) with a dedicated gate driver such as the TLE75080ESHXUMA1 or IRS2302STRPBF to achieve >95% efficiency.
Recomendado
48V Mild-Hybrid DC-DC Converter
The IPD90N06S404ATMA2 fits the high-side switch position in 48 V mild-hybrid DC-DC converters that step down to 12 V for legacy automotive loads. Its 60 V VDS rating provides sufficient margin above the 48 V nominal bus (with transient tolerance to 60 V), and the 3.8 mΩ RDS(on) at VGS = 10 V minimizes conduction loss at the 30-50 A typical load levels. The 90 A peak current rating accommodates inrush during cold-crank recovery. AEC-Q101 qualification is mandatory for the 48 V bus environment, which experiences harsher EMI and thermal stress than conventional 12 V systems. A gate driver with >2 A peak sink/source capability (such as 1EDN7511BXUSA1 or EiceDRIVER 2EDL8023GXUMA1) is recommended for fast switching at 100-200 kHz.
Recomendado
Industrial 24V Brushed DC Motor Control
Industrial 24 V brushed DC motor control modules - such as those used in conveyor systems, valve actuators, and automated guided vehicles (AGVs) - benefit from the IPD90N06S404ATMA2's 60 V VDS rating (which provides 2.5x margin above 24 V nominal with inductive transients) and 90 A continuous current capability. The 3.8 mΩ RDS(on) keeps the module cool at high duty cycles, and the DPAK package's exposed tab allows direct soldering to a copper heatsink area on the PCB for sustained 50-70 A operation. Although not AEC-Q100 qualified, the industrial-temperature-grade variant with 175 °C TJ max supports factory-floor deployment with ambient temperatures up to 85 °C.
Recomendado
Automotive ABS Module Solenoid Driver
Anti-lock braking system (ABS) modules use high-current N-channel MOSFETs to drive hydraulic solenoid valves that modulate brake pressure during emergency stops. The IPD90N06S404ATMA2's 90 A continuous current and 150 W power dissipation handle the 20-40 A peak solenoid currents with margin, while its AEC-Q101 qualification and 175 °C TJ max ensure reliability in the under-hood environment. The 3.8 mΩ RDS(on) reduces thermal stress during the rapid PWM cycling characteristic of ABS pressure modulation. Designers typically use a dedicated gate driver with desaturation detection (such as 1EDI20N12AFXUMA1) to protect the MOSFET against short-to-ground faults in the solenoid wiring harness.
Recomendado
Battery Management System (BMS) Protection
In lithium-ion battery management systems (BMS), the IPD90N06S404ATMA2 serves as the low-side protection MOSFET in 12 V/24 V battery packs, disconnecting the load during over-current, short-circuit, or reverse-polarity events. Its 60 V VDS rating exceeds typical 12 V/24 V battery voltages with substantial transient margin, and the 3.8 mΩ RDS(on) minimizes voltage drop across the protection path - critical for accurate fuel gauging and minimal efficiency loss. The 90 A continuous rating supports high-power loads such as inverters and traction motors. AEC-Q101 qualification is essential for automotive 12 V start-stop and 48 V mild-hybrid battery packs.
Recomendado
High-Current OR-ing / Power Mux
Redundant power-supply architectures use OR-ing MOSFETs to combine two independent power sources (e.g., main supply and battery backup) while preventing back-feed during fault conditions. The IPD90N06S404ATMA2's 3.8 mΩ RDS(on) keeps conduction losses below 0.5 W at 12 A, and its 60 V VDS rating supports 24 V/48 V OR-ing configurations. The DPAK package's small footprint allows high-density PCB layouts, and the 90 A current rating handles inrush during hot-plug events. An OR-ing controller such as the LTC4359 or LM5050 monitors VDS and rapidly turns off the MOSFET when reverse current is detected.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IPD90N06S404ATMA2 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IPB90N06S4L04ATMA2 | IPD90N06S4L04ATMA2 | IPP90N06S4L04ATMA2 | BSC097N06NSATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|---|---|---|---|
| Package | DPAK (PG-TO252-3-11) | D2PAK (TO-263) | DPAK (TO-252) - same | TO-220 | SuperSO8 | TDSON-8 |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS (Drain-Source Voltage) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Continuous Drain Current (Tc=25C) | 90 A | 90 A | 90 A | 90 A | 44 A | 60 A |
| RDS(on) at VGS=10V | 3.8 mΩ | 3.7 mΩ | 2.5 mΩ | 3.7 mΩ | 9.7 mΩ | 7.3 mΩ |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Maximum Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Technology | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS 5 |
Principais diferenciais
- World's lowest RDS(on) at 60V in DPAK per manufacturer claim (vs Standard 60V DPAK MOSFETs)
- AEC-Q101 automotive qualification with 175°C TJ max (vs Industrial-grade MOSFETs without AEC-Q101)
- 100% avalanche-tested ruggedness (vs Standard avalanche-rated MOSFETs)
Notas de projeto
At 90 A continuous drain current in DPAK package with ~62 °C/W junction-to-ambient thermal resistance (on 1 oz copper, no airflow), the IPD90N06S404ATMA2 dissipates up to ~150 W at TC = 25 °C but only ~3-5 W reliably at TA = 25 °C without additional heatsinking. For sustained operation above 30 A, attach a copper pour of at least 25 × 25 mm or use the exposed tab with thermal vias to an internal PCB plane. At 12 V VIN, switching a 5 V load at 50 A, conduction loss is I² × R = 50² × 0.0038 = 9.5 W, requiring thermal management. Estimated junction temperature: TJ = TA + (PD × θJA) = 25 + (9.5 × 50) = 500 °C exceeds limits - so heatsinking is critical.
Layout the DPAK exposed tab (drain) with a continuous copper pour of at least 50 × 50 mm on top layer, stitched with thermal vias (0.3 mm drill, 1.0 mm pitch, 9-16 vias) to internal ground/power planes. Place the gate drive loop (gate resistor - gate pin - source return) within 5 mm of the package to minimize parasitic inductance (typically <5 nH). For switching frequencies above 50 kHz, use a Kelvin-source connection by separating the power source lead from the gate-drive source return to prevent gate-oscillation caused by source-inductance voltage spikes.
Avoid driving the gate with voltages above ±20 V VGS absolute maximum - even brief transients from gate-driver supply instability can permanently damage the thin gate oxide of this OptiMOS part. Add a 10 kΩ pull-down resistor from gate to source to ensure the MOSFET stays off during power-up or controller reset. Never exceed the 60 V VDS rating, even transiently - inductive load switching without a flyback/clamp diode will generate VDS spikes that can exceed the rating. For solenoid/motor loads, always include a flyback diode or active clamp circuit.
Informações de conformidade
AEC-Q101 qualified (automotive-grade variant of AEC-Q100). Green Product (RoHS compliant) per Infineon. MSL1 rated per JEDEC J-STD-020.
