IPG20N04S4L07ATMA1 - 40V 20A Dual N-Ch MOSFET 7.2mΩ | Infineon
N.º da peça: IPG20N04S4L07ATMA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.55 | $25,50 |
| 100 | $2.18 | $218,00 |
| 500 | $1.92 | $960,00 |
| 1.000 | $1.65 | $1.650,00 |
IPG20N04S4L07ATMA1 Visão geral
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) array combines two independent MOSFET die in a single thermally-coupled package, allowing designers to replace two discrete DPAK parts with one smaller footprint and lower parasitics. The IPG20N04S4L07ATMA1 belongs to Infineon's OptiMOS™ T2 family and is part of the broader discrete semiconductor > MOSFET product hierarchy, bridging discrete transistors and integrated power stages used in modern power management designs.
Key features include logic-level drive (full enhancement at VGS = 4.5V), 100% avalanche-tested dice, MSL1 moisture sensitivity (peak reflow 260°C), and RoHS-compliant lead-free terminations. The exposed-drain pad of the TDSON-8-4 package provides a low thermal resistance path, enabling sustained high-current switching without external heat sinking in well-designed PCBs. Both MOSFETs share the same die family, ensuring matched R_DS(on) and switching characteristics for synchronous or half-bridge topologies.
Typical applications include automotive 12V/24V load switching, body electronics modules, ECU power distribution, electric power steering (EPS), and motor driver half-bridges. Its dual-channel configuration makes it equally suitable for synchronous buck converters where two low-side/high-side FETs share a compact footprint, and for reverse-polarity protection circuits where both polarities must be blocked.
When designing with this part, pay close attention to gate-drive voltage headroom and use a dedicated gate resistor to dampen ringing. The TDSON-8-4 footprint allows direct replacement of two DPAK footprints, enabling significant PCB area savings. Always consult the manufacturer datasheet for absolute maximum ratings and safe operating area curves before finalizing thermal design.
Alternativas drop-in para IPG20N04S4L07ATMA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IPG20N04S4L07ATMA1 (mesmo formato e footprint) — diferindo em Package, MSL Level, FET Type, Operating Temperature Range, RoHS Status.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IPG20N04S4L07AATMA1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IPG20N04S4L-07
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IPG20N04S4L-07A
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSC018N04LSGATMA1
✅ Drop-In✓ Em estoque
$0.52 / unidade
Ver ficha técnica →BSC014N04LSATMA1
✅ Drop-In✓ Em estoque
$0.74 / unidade
Ver ficha técnica →IPG20N04S4L07ATMA1 Classificações máximas e características elétricas
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ T2 |
| FET Type | 2x N-Channel (Dual, Independent) |
| Drain-to-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 20 A |
| RDS(on) Max @ VGS=10V | 7.2 mΩ (typical) |
| Power Dissipation (PD) Max | 65 W |
| Temperatura de junção de operação | -55°C to +175°C |
| Encapsulamento | PG-TDSON-8-4 (TDSON-8-4) |
| Tipo de montagem | Surface Mount |
| Logic-Level Gate Drive | Yes (4.5V VGS fully enhanced) |
| Nível MSL | MSL1 (per JEDEC J-STD-020, 260°C peak reflow) |
| AEC-Q101 Qualification | Qualified |
| Avalanche Tested | 100% (per datasheet) |
| RoHS / Lead-Free | RoHS compliant, lead-free terminations |
Configuração de pinos do IPG20N04S4L07ATMA1
| Pino 1 | G1 — Gate of MOSFET 1 |
| Pino 2 | S1 — Source of MOSFET 1 |
| Pino 3 | D1 — Drain of MOSFET 1 |
| Pino 4 | D1 — Drain of MOSFET 1 (thermal pad tab) |
| Pino 5 | D2 — Drain of MOSFET 2 |
| Pino 6 | D2 — Drain of MOSFET 2 (thermal pad tab) |
| Pino 7 | S2 — Source of MOSFET 2 |
| Pino 8 | G2 — Gate of MOSFET 2 |
Área de Operação Segura - DC Continuous
Aplicações típicas
IPG20N04S4L07ATMA1 é adequado para 6 aplicaçãos: Automotive 12V Load Switching, Electric Power Steering (EPS) Half-Bridge, Synchronous Buck Converter Power Stage, H-Bridge DC Motor Driver, Reverse-Polarity and Battery Disconnect Protection, Industrial 24V Solenoid and Valve Driver.
Automotive 12V Load Switching
The IPG20N04S4L07ATMA1 is purpose-built for 12V automotive body-electronics load switching, where its 40V VDS rating easily absorbs 35V load-dump transients and its 20A continuous current handles high inrush loads such as LED headlamp drivers, seat heaters, and power-window motors. The dual-channel configuration lets one IC drive two independent loads (e.g., left and right headlamp relays), saving PCB area versus two discrete DPAK parts. AEC-Q101 qualification and 175°C junction temperature tolerance provide the reliability margin required under-hood and in cabin modules. Designers typically place a 10Ω gate resistor and a TVS clamp on the drain to meet ISO 7637-2 surge requirements.
Recomendado
Electric Power Steering (EPS) Half-Bridge
In EPS motor-drive stages, the IPG20N04S4L07ATMA1's dual N-channel configuration forms a compact half-bridge for driving the brushless DC motor's low-side and high-side switches at 20A continuous. The 7.2 mΩ R_DS(on) keeps conduction losses under 1.5W per FET at full load, allowing sustained operation without external heatsinking on a 1 in² copper pour. Logic-level 4.5V gate drive permits direct interface with 5V gate-driver ICs. AEC-Q101 and 175°C TJ ratings satisfy the ASIL-relevant functional-safety demands of steering systems, while MSL1 reflow compatibility simplifies SMT assembly on automotive production lines.
Recomendado
Synchronous Buck Converter Power Stage
The IPG20N04S4L07ATMA1's two independent N-channel dice serve directly as the low-side and high-side switches in a 12V-to-3.3V/5V synchronous buck converter delivering up to 20A output. With 7.2 mΩ R_DS(on), the part dissipates roughly 3W at 20A, manageable on a standard 4-layer FR4 PCB with 1 oz copper and no external heatsink. The exposed-drain pad keeps thermal resistance near 40°C/W, allowing continuous operation at 20A with junction rise under 80°C. Designers pair it with a synchronous-rectifier controller such as the IR2114SSPBF to minimize switching-node ringing and achieve >93% peak efficiency in 12V-input POL converters.
Recomendado
H-Bridge DC Motor Driver
Two IPG20N04S4L07ATMA1 devices wired as a full H-bridge deliver bidirectional control of brushed DC motors up to 20A continuous in automotive actuators (e.g., throttle bodies, fuel pumps, mirror adjusters). Each IC provides two dice, so two parts build a complete four-FET bridge with matched R_DS(on) for balanced switching transients. The 40V VDS margin handles back-EMF spikes from inductive loads when paired with flyback diodes or active clamping. Logic-level gate drive interfaces directly with 5V H-bridge predrivers, while AEC-Q101 qualification and 175°C TJ tolerance ensure reliability across the automotive temperature range.
Recomendado
Reverse-Polarity and Battery Disconnect Protection
The IPG20N04S4L07ATMA1's dual N-channel configuration implements a back-to-back blocking switch for reverse-polarity protection and low-loss battery disconnect in 12V/24V automotive ECUs. Both dice share the same 7.2 mΩ R_DS(on), giving 14 mΩ total conduction loss at 20A - far lower than Schottky-diode solutions. The 40V VDS rating easily handles 24V bus transients, and 175°C TJ capability supports under-hood mounting. Logic-level drive allows the gate to be pulled up by a microcontroller GPIO or a dedicated hot-swap controller, and the exposed pad provides adequate heat dissipation for continuous 20A disconnect/connect duty.
Recomendado
Industrial 24V Solenoid and Valve Driver
In industrial automation, the IPG20N04S4L07ATMA1 drives 24V solenoids, hydraulic valves, and relay coils at up to 20A per channel. Its 40V VDS provides 67% headroom over a nominal 24V rail, comfortably absorbing inductive flyback spikes from solenoid turn-off. The 7.2 mΩ R_DS(on) reduces driver-stage dissipation to roughly 2.9W at 20A, eliminating the need for bulky heatsinks in PLC output modules. Logic-level gate drive simplifies interface to 24V-to-5V logic-level shifters, and the dual-channel configuration lets one IC sink two independent solenoid loads - cutting board space by 50% versus discrete DPAK solutions.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IPG20N04S4L07ATMA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IPG20N04S4L07AATMA1 | IPG20N04S4L-07 | IPG20N04S4L-07A | BSC018N04LSGATMA1 | BSC014N04LSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-4 | PG-TDSON-8-10 (same family) | PG-TDSON-8-4 (same) | PG-TDSON-8-10 (same family) | PG-TDSON-8 (same family) | PG-TDSON-8 (same family) |
| VDS Max | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current | 20 A (per channel) | 20 A (per channel) | 20 A (per channel) | 20 A (per channel) | Single channel, higher current | Single channel, higher current |
| RDS(on) @ 10V | 7.2 mΩ (typ) | 7.2 mΩ (typ) | 7.2 mΩ (typ) | 7.2 mΩ (typ) | 1.8 mΩ (lower) | 1.4 mΩ (lower) |
| Configuration | Dual N-channel | Dual N-channel | Dual N-channel | Dual N-channel | Single N-channel | Single N-channel |
| Logic-Level Gate Drive | Yes (4.5V VGS) | Yes | Yes | Yes | Yes | Yes |
| AEC-Q101 Qualified | Yes | Yes | Industrial grade | Yes | Yes | Yes |
| Operating Junction Temp | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +150°C typical | -55°C to +150°C typical |
Principais diferenciais
- Dual N-channel MOSFETs in one TDSON-8 package (vs BSC018N04LSGATMA1 (single N-channel))
- AEC-Q101 qualified with 175°C junction temperature (vs IPG20N04S4L-07 (industrial grade))
- Logic-level 4.5V gate drive (vs Standard 10V-gate MOSFETs)
Notas de projeto
Estimated: at VGS=10V and ID=20A per channel, conduction loss is roughly I²·RDS(on) = 400 × 0.0072 = 2.88W per FET, totaling ~5.8W for both dice. The PG-TDSON-8-4 package has a typical RθJA near 40°C/W on a 1 in² 4-layer 1 oz copper pad, giving a junction rise of ~115°C above ambient. To stay below 150°C TJ in 85°C ambient applications, limit continuous current to ~13A per channel or increase copper area to 2-3 in². Always validate with the manufacturer's SOA curves in the final design.
Place the gate-drive resistor (typically 10Ω) within 5 mm of the gate pin to dampen parasitic ringing caused by the gate-source and gate-drain capacitances (Ciss, Crss) combined with PCB trace inductance. Keep the source-return loop as short as possible - if the source pin is connected through a long trace, use a Kelvin-source connection (pin 2 / pin 7 dedicated to gate return) to avoid feedback that slows switching and increases switching losses. The exposed drain pad must be soldered to a continuous copper pour for both thermal dissipation and low-inductance drain return.
Do not exceed VGS = ±20V absolute maximum - use a gate-source Zener clamp (typically 12V) when driving from a higher-voltage gate driver or in circuits with inductive kickback on the source. Below VGS(th) of roughly 2V the FET is in cut-off; confirm your microcontroller's GPIO high-level output (typically 3.3V or 5V) exceeds the worst-case VGS(th) plus margin under all temperature and load conditions. Also note that the two dice share the same drain tab electrically only via PCB routing - they are NOT internally connected, so always verify drain-source voltage on both channels independently.
Informações de conformidade
AEC-Q101 automotive qualification per Infineon product page. RoHS compliant and lead-free per datasheet. MSL1 to 260°C peak reflow per JEDEC J-STD-020. 100% avalanche tested.
