IAUA120N04S5N014AUMA1 vs IAUC120N04S6N010ATMA1 Comparação
Comparação detalhada lado a lado de IAUA120N04S5N014AUMA1 por Infineon e IAUC120N04S6N010ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon
IAUA120N04S5N014AUMA1 ✓ AtivoInfineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUA120N04S5N014AUMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $2,18 | $0,68 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IAUA120N04S5N014AUMA1 | — |
| Series | OptiMOS™ 5 | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS 6 |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C | 120 A | — |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V | 1.4 mΩ | — |
| Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C | 136 W | — |
| Faixa de temperatura de operação | -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet] | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Encapsulamento | PG-HSOF-5-2 (sTOLL) | PG-TDSON-8-34 (5x6 mm leadless) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Contagem de pinos | 5 + Tab (6 effective) | — |
| Gate Drive | Enhancement Mode | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Status RoHS | Compliant | Compliant |
| Nível MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |