IAUA120N04S5N014AUMA1 vs IAUC120N04S6N010ATMA1 Vergleich
Detaillierter Direktvergleich von IAUA120N04S5N014AUMA1 von Infineon und IAUC120N04S6N010ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon
IAUA120N04S5N014AUMA1 ✓ AktivInfineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUA120N04S5N014AUMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,18 | $0,68 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IAUA120N04S5N014AUMA1 | — |
| Series | OptiMOS™ 5 | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS 6 |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C | 120 A | — |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V | 1.4 mΩ | — |
| Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C | 136 W | — |
| Betriebstemperaturbereich | -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet] | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Gehäuse | PG-HSOF-5-2 (sTOLL) | PG-TDSON-8-34 (5x6 mm leadless) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 5 + Tab (6 effective) | — |
| Gate Drive | Enhancement Mode | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |