IAUA120N04S5N014AUMA1 vs IAUC120N04S6N010ATMA1 对比

详细并排对比 IAUA120N04S5N014AUMA1 出自 Infineon 和 IAUC120N04S6N010ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUA120N04S5N014AUMA1 IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon

IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon

IAUA120N04S5N014AUMA1 ✓ 量产中
Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ 量产中

规格对比

参数 IAUA120N04S5N014AUMA1 IAUC120N04S6N010ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.18 $0.68
Manufacturer Infineon Technologies —
Part Number IAUA120N04S5N014AUMA1 —
Series OptiMOS™ 5 —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 6
Drain-to-Source Voltage (V<sub>DSS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C 120 A —
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V 1.4 mΩ —
Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C 136 W —
工作温度范围 -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet] -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family)
封装 PG-HSOF-5-2 (sTOLL) PG-TDSON-8-34 (5x6 mm leadless)
安装类型 Surface Mount Surface Mount
引脚数量 5 + Tab (6 effective) —
Gate Drive Enhancement Mode —
Automotive Qualification AEC-Q101 AEC-Q101
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020, per Infineon TDSON family)
Avalanche Rated Yes (100% avalanche tested) —
Drain-Source Voltage (V(BR)DSS) — 40 V
Continuous Drain Current (Id, Tc) — 150 A
Power Dissipation (Pd, Tc) — 150 W
RDS(on) at VGS=10V (typ) — 1.0 mΩ
RDS(on) at VGS=10V (max per LCSC excerpt) — 1.03 mΩ
Gate-Source Threshold (VGS(th), typ) — 3 V (at 90 µA)
Gate Drive Recommendation — 10 V VGS for full RDS(on) spec
Polarity — Single N-channel

数据手册与资源

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