IAUTN12S5N017ATMA1 vs IAUCN10S5L280DATMA1 Comparação
Comparação detalhada lado a lado de IAUTN12S5N017ATMA1 por Infineon e IAUCN10S5L280DATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUTN12S5N017ATMA1 - 120V 1.7mΩ N-Channel OptiMOS 5 MOSFET | Infineon
IAUTN12S5N017ATMA1 ✓ AtivoInfineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUTN12S5N017ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $4,83 | $1,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 120 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 314 A | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 1.7 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 2.5 V typical (range per datasheet) | — |
| Gate Charge (Q<sub>g</sub>) | per datasheet curve (typ. ~150 nC class) | — |
| Maximum Junction Temperature | 175 °C | — |
| Faixa de temperatura de operação | -55 °C to +175 °C (junction) | -55C to +175C (junction) |
| Encapsulamento | PG-HSOF-8-1 (HSOF-8, surface mount) | PG-TDSON-8-61 (SSO8) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Mounting Position | Kelvin source pin (pin 2) for high-frequency layouts | — |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 Trench MOSFET |
| Qualification | Automotive grade (per Infineon part page, AEC-Q101 expected for the family) | — |
| Status RoHS | Compliant (per distributor listings) | Compliant |
| Nível MSL | 1 (per JEDEC J-STD-020, by package) | 1 |
| Product Family | — | OptiMOS 5 |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| Automotive Qualified | — | Yes (AEC-Q101, IAU prefix) |
| Contagem de pinos | — | 8 |
| Packing | — | Tape & Reel (T&R) |