IAUTN12S5N017ATMA1 vs IAUCN10S5L280DATMA1 Comparison
Detailed side-by-side comparison of IAUTN12S5N017ATMA1 by Infineon and IAUCN10S5L280DATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUTN12S5N017ATMA1
IAUTN12S5N017ATMA1 - 120V 1.7mΞ© N-Channel OptiMOS 5 MOSFET | Infineon
IAUTN12S5N017ATMA1 β ActiveInfineon
IAUCN10S5L280DATMA1
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 β ActiveSpecification Comparison
| Parameter | IAUTN12S5N017ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.83 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 120 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 314 A | β |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 1.7 mΞ© | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 2.5 V typical (range per datasheet) | β |
| Gate Charge (Q<sub>g</sub>) | per datasheet curve (typ. ~150 nC class) | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (junction) | -55C to +175C (junction) |
| Package | PG-HSOF-8-1 (HSOF-8, surface mount) | PG-TDSON-8-61 (SSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Mounting Position | Kelvin source pin (pin 2) for high-frequency layouts | β |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 Trench MOSFET |
| Qualification | Automotive grade (per Infineon part page, AEC-Q101 expected for the family) | β |
| RoHS Status | Compliant (per distributor listings) | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020, by package) | 1 |
| Product Family | β | OptiMOS 5 |
| Configuration | β | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (Vds) | β | 100 V |
| Continuous Drain Current (Id) at Tj | β | 23 A |
| Power Dissipation (Pd) at Tc | β | 38 W |
| Automotive Qualified | β | Yes (AEC-Q101, IAU prefix) |
| Pin Count | β | 8 |
| Packing | β | Tape & Reel (T&R) |