IPL60R125C7AUMA1 vs IPL65R070C7AUMA1 Comparação
Comparação detalhada lado a lado de IPL60R125C7AUMA1 por Infineon e IPL65R070C7AUMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IPL60R125C7AUMA1 | IPL65R070C7AUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $2,10 | $1,68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS C7 |
| FET Type | N-Channel | — |
| Technology | CoolMOS (superjunction) | Superjunction N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 650 V |
| Continuous Drain Current (ID, Tc) | 17 A | — |
| On-State Resistance (RDS(on), max) | 125 mOhm | — |
| Power Dissipation (PD, Tc) | 103 W | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Encapsulamento | PG-VSON-4 (surface mount) | PG-VSON-4 (surface mount) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Contagem de pinos | 4 (Gate / Drain / Drain / Source) | — |
| Faixa de temperatura de operação | -55 C to +150 C (junction) | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Channel Mode | Enhancement | — |
| Drive Voltage (recommended) | 10 V VGS | — |
| Continuous Drain Current (ID) at TC=25°C | — | 28 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 70 mΩ (typical) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 169 W |
| Avalanche Energy (EAS) | — | 171 mJ |
| Temperatura de junção de operação | — | -55°C to +150°C |
| Configuration | — | Single with built-in diode |
| Channel Type | — | N-Channel |
| Lead-Free | — | Yes |