IPL60R125C7AUMA1 vs IPL65R070C7AUMA1 비교
다음의 상세 나란히 비교: IPL60R125C7AUMA1 제조: Infineon 및 IPL65R070C7AUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPL60R125C7AUMA1 | IPL65R070C7AUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.10 | $1.68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS C7 |
| FET Type | N-Channel | — |
| Technology | CoolMOS (superjunction) | Superjunction N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 650 V |
| Continuous Drain Current (ID, Tc) | 17 A | — |
| On-State Resistance (RDS(on), max) | 125 mOhm | — |
| Power Dissipation (PD, Tc) | 103 W | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| 패키지 | PG-VSON-4 (surface mount) | PG-VSON-4 (surface mount) |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 4 (Gate / Drain / Drain / Source) | — |
| 동작 온도 범위 | -55 C to +150 C (junction) | — |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Channel Mode | Enhancement | — |
| Drive Voltage (recommended) | 10 V VGS | — |
| Continuous Drain Current (ID) at TC=25°C | — | 28 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 70 mΩ (typical) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 169 W |
| Avalanche Energy (EAS) | — | 171 mJ |
| 동작 접합 온도 | — | -55°C to +150°C |
| Configuration | — | Single with built-in diode |
| Channel Type | — | N-Channel |
| Lead-Free | — | Yes |