IRF8736TRPBF vs IRF8736PBF Comparação
Comparação detalhada lado a lado de IRF8736TRPBF por Infineon e IRF8736PBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRF8736TRPBF | IRF8736PBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,27 | $0,45 |
| FET Type | N-Channel | — |
| Technology | StrongIRFET / HEXFET | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 18 A | — |
| Power Dissipation (PD) Max at TA=25C | 2.5 W | — |
| Drain-Source On-Resistance (RDS(on)) Max | 4.8 mOhm at VGS = 10V | — |
| Gate Charge (Qg) Typical | 17 nC | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Encapsulamento | SO-8 (8-SO, MS-012AA) | SO-8 (8-SO) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | -55C to +150C (junction) | -55°C to +150°C (junction) |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free, RoHS compliant) | — |
| Nível MSL | 1 (per JEDEC J-STD-020) | 1 (Unlimited) |
| Avalanche Rated | Yes (fully characterized avalanche voltage) | Yes (fully characterized avalanche voltage and current) |
| Configuration | Single | — |
| Packaging | Tape & Reel (TRPBF suffix) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TA=70°C | — | [DATA_NEEDED: ID at TA=70°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) at VGS=10V | — | 4.8 mΩ |
| On-Resistance RDS(on) at VGS=4.5V | — | 6.0 mΩ (typical) |
| Gate-Source Threshold Voltage VGS(th) | — | Logic-level (optimized for 5 V drive) |
| Total Gate Charge Qg | — | 17 nC (typical) |
| Maximum Power Dissipation at TA=25°C | — | 2.5 W |
| RoHS / Lead-Free | — | Lead-Free, RoHS3 Compliant |
| Qualification Standard | — | JEDEC |