IRF8736TRPBF vs IRF8736PBF 비교

다음의 상세 나란히 비교: IRF8736TRPBF 제조: Infineon 및 IRF8736PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF8736TRPBF IRF8736PBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.27 $0.45
FET Type N-Channel —
Technology StrongIRFET / HEXFET —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25C 18 A —
Power Dissipation (PD) Max at TA=25C 2.5 W —
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V —
Gate Charge (Qg) Typical 17 nC —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
패키지 SO-8 (8-SO, MS-012AA) SO-8 (8-SO)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55C to +150C (junction) -55°C to +150°C (junction)
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
MSL 레벨 1 (per JEDEC J-STD-020) 1 (Unlimited)
Avalanche Rated Yes (fully characterized avalanche voltage) Yes (fully characterized avalanche voltage and current)
Configuration Single —
Packaging Tape & Reel (TRPBF suffix) —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TA=70°C — [DATA_NEEDED: ID at TA=70°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) at VGS=10V — 4.8 mΩ
On-Resistance RDS(on) at VGS=4.5V — 6.0 mΩ (typical)
Gate-Source Threshold Voltage VGS(th) — Logic-level (optimized for 5 V drive)
Total Gate Charge Qg — 17 nC (typical)
Maximum Power Dissipation at TA=25°C — 2.5 W
RoHS / Lead-Free — Lead-Free, RoHS3 Compliant
Qualification Standard — JEDEC

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