IRFH5301TRPBF vs IRF7854TRPBF Comparação
Comparação detalhada lado a lado de IRFH5301TRPBF por Infineon e IRF7854TRPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRFH5301TRPBF | IRF7854TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,36 | $0,48 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (StrongIRFET) | HEXFET (planar N-channel) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (TA, 25C) | 35 A | — |
| Continuous Drain Current (TC, 25C) | 100 A | — |
| RDS(on) Max @ VGS=10V | 1.85 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | 37 nC (typical) | — |
| Power Dissipation (TA) | 3.6 W | — |
| Power Dissipation (TC) | 110 W | — |
| Faixa de temperatura de operação | -55C to +150C (junction) | -55°C to +150°C (TJ) |
| Encapsulamento | PQFN (5x6 mm) Single Die | SO-8 |
| Tipo de montagem | Surface Mount | Surface Mount |
| Gate Drive Logic Level | Optimized for 5 V VGS drive | — |
| RoHS / Halogen-Free | RoHS compliant, Halogen-free | — |
| Qualification | JEDEC standard | JEDEC industrial, Normal level |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 10 A |
| Power Dissipation (PD) at Ta=25°C | — | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | — | 13.4 mΩ |
| Gate-Source Threshold Voltage VGS(th) max | — | 4.9 V |
| Total Gate Charge Qg | — | 27 nC |
| Lead-Free / RoHS | — | Yes (PBF suffix, lead-free) |
| Solder Process | — | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | — | 10 V |