IRFH5301TRPBF vs IRF7854TRPBF Comparison
Detailed side-by-side comparison of IRFH5301TRPBF by Infineon and IRF7854TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5301TRPBF
IRFH5301TRPBF - 30V 100A N-Channel HEXFET MOSFET | Infineon
IRFH5301TRPBF β Active
Specification Comparison
| Parameter | IRFH5301TRPBF | IRF7854TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.48 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (StrongIRFET) | HEXFET (planar N-channel) |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (TA, 25C) | 35 A | β |
| Continuous Drain Current (TC, 25C) | 100 A | β |
| RDS(on) Max @ VGS=10V | 1.85 mOhm | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge (Qg) | 37 nC (typical) | β |
| Power Dissipation (TA) | 3.6 W | β |
| Power Dissipation (TC) | 110 W | β |
| Operating Temperature Range | -55C to +150C (junction) | -55Β°C to +150Β°C (TJ) |
| Package | PQFN (5x6 mm) Single Die | SO-8 |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Drive Logic Level | Optimized for 5 V VGS drive | β |
| RoHS / Halogen-Free | RoHS compliant, Halogen-free | β |
| Qualification | JEDEC standard | JEDEC industrial, Normal level |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 10 A |
| Power Dissipation (PD) at Ta=25Β°C | β | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | β | 13.4 mΞ© |
| Gate-Source Threshold Voltage VGS(th) max | β | 4.9 V |
| Total Gate Charge Qg | β | 27 nC |
| Lead-Free / RoHS | β | Yes (PBF suffix, lead-free) |
| Solder Process | β | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | β | 10 V |