IRF7319TRPBF - 30V Dual N/P-Channel MOSFET, 6.5A | Infineon
N.º da peça: IRF7319TRPBF ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.64 | $1,64 |
| 10 | $1.45 | $14,50 |
| 100 | $1.15 | $115,00 |
| 500 | $0.92 | $460,00 |
| 1.000 | $0.78 | $780,00 |
| 3.000 | $0.62 | $1.860,00 |
IRF7319TRPBF Visão geral
A dual MOSFET array (also called a half-bridge or complementary pair in a single package) combines two MOSFET die in one outline so the designer can build synchronous-rectification, level shifting, load switching, or H-bridge stages without placing two discretes. The IRF7319 belongs to the N+P-channel MOSFET family within Infineon's IR MOSFET technology portfolio, with broader taxonomy: MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor device. The P-channel device inside allows direct high-side drive from a low-voltage control signal without an extra charge pump, simplifying circuits where a simple on/off load switch is needed.
Key features include the Infineon/IR fifth-generation HEXFET process, which achieves extremely low on-resistance per silicon area for the N-channel, as well as low gate charge and fast switching. The SO-8 package offers industry-standard pinout for dual MOSFET arrays (pin 1/2/3 = N-source/gate/drain, pin 4 = N-drain, pin 5/6/7/8 = P-drain/gate/source/source) and a thermal resistance of approximately 120 C/W on the N-channel and 110 C/W on the P-channel under steady-state conditions on a standard JEDEC test board.
Typical applications include DC-DC converter synchronous rectification, high-side load switching, motor drive H-bridges, battery protection circuits, and USB power switches. The complementary pair simplifies PCB layout and reduces parasitic inductance between the two switches, which improves efficiency in switching converters operating in the 100 kHz to 1 MHz range.
When designing with this part, verify that the steady-state power dissipation in each channel stays within the SO-8 thermal envelope (typically 1.5-2W per channel on a 1 sq-in copper pad) and ensure the gate drive voltage on the P-channel is sufficiently negative relative to its source to fully enhance the device. The TR suffix indicates Tape & Reel packaging, and PBF indicates lead-free (Pb-free) terminations.
This page synthesizes distributor pricing, drop-in SO-8 alternatives, and practical PCB layout guidance not found in the manufacturer datasheet alone.
Alternativas drop-in para IRF7319TRPBF — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IRF7319TRPBF (mesmo formato e footprint) — diferindo em Technology, Package, Configuration, Drain-Source Voltage (VDS), MSL Level.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IRF7319PBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRF7309TRPBF
✅ Drop-In✓ Em estoque
$0.35 / unidade
Ver ficha técnica →FDS8958A
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRF7313TRPBF-1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRF7341GTRPBF
✅ Drop-In✓ Em estoque
$0.76 / unidade
Ver ficha técnica →IRFR1205TRPBF
✅ Drop-In✓ Em estoque
$0.49 / unidade
Ver ficha técnica →IRF7319TRPBF Classificações máximas e características elétricas
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Product Type | Dual MOSFET Array (N-channel + P-channel) |
| Technology | IR MOSFET / Fifth Generation HEXFET |
| Drain-to-Source Voltage (VDS) | 30 V |
| Continuous Drain Current N-channel (ID) | 6.5 A |
| Continuous Drain Current P-channel (ID) | 4.9 A |
| RDS(on) Max N-channel | 29 mOhm (per Infineon product page) |
| Total Power Dissipation (PD) | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | 110 C/W (steady state) |
| Package Type | 8-SOIC (SO-8) |
| Tipo de montagem | Surface Mount |
| Faixa de temperatura de operação | -55C to +150C (junction) |
| Lead-Free / RoHS | Yes (PBF suffix = Pb-free) |
| Packaging | Tape & Reel (TR suffix) |
| Configuration | N-Channel + P-Channel (complementary half-bridge) |
Configuração de pinos do IRF7319TRPBF
| Pino 1 | S1 — N-channel Source |
| Pino 2 | G1 — N-channel Gate |
| Pino 3 | D1 — N-channel Drain |
| Pino 4 | D1 — N-channel Drain (tab) |
| Pino 5 | D2 — P-channel Drain (tab) |
| Pino 6 | G2 — P-channel Gate |
| Pino 7 | S2 — P-channel Source |
| Pino 8 | S2 — P-channel Source |
IRF7319TRPBF Área de Operação Segura (DC)
Aplicações típicas
IRF7319TRPBF é adequado para 6 aplicaçãos: DC-DC Synchronous Rectification, USB Type-C VBUS Load Switch, Battery Protection and Load Disconnect, H-Bridge Motor Driver, Hot-Swap and Inrush Current Limiter, Level Shifter and Signal Switch.
DC-DC Synchronous Rectification
The IRF7319TRPBF's complementary N+P pair in a single SO-8 package is purpose-built for synchronous rectification in low-voltage buck and boost converters. The N-channel acts as the low-side synchronous FET with 6.5A continuous current capability, while the integrated P-channel supports high-side P-FET topologies driven directly from a 0-5V GPIO without a charge pump. The single-package construction halves the switching loop inductance versus two discretes, reducing ringing and improving efficiency by 1-3 percent at 500 kHz. Place both drains on the exposed pad (pins 4 and 5) for maximum heat spreading on a 1+ sq-in copper pour.
Recomendado
USB Type-C VBUS Load Switch
The IRF7319TRPBF suits USB Type-C VBUS load switching because its 30V VDS comfortably exceeds USB-PD 20V fixed and 21V programmable voltages with adequate derating. The integrated P-channel can be driven directly from a 3.3V GPIO for high-side switch control, while the N-channel handles the low-side return path in active-cable or current-limit topologies. With 5V/3A (15W) continuous load, dissipation stays below the 2W package limit when mounted on 1 sq-in of SO-8 copper. The SO-8 footprint keeps the BOM count low versus discrete SOT-23 solutions.
Recomendado
Battery Protection and Load Disconnect
In single-cell lithium-ion and 2-3S battery packs, the IRF7319TRPBF provides complementary high-side disconnect (P-channel) and low-side protection (N-channel) in one SO-8. The P-channel blocks reverse-current and over-discharge, while the N-channel handles short-circuit protection and over-current shutdown when driven from a battery management IC. The 30V rating covers 3S packs (12.6V max) with comfortable margin. Thermal performance at typical 2A continuous discharge is well within the 2W package limit on a 1 sq-in SO-8 footprint.
Recomendado
H-Bridge Motor Driver
Two IRF7319TRPBF devices form a complete H-bridge for small DC motors up to 6.5A continuous per leg. The complementary N+P topology allows direct GPIO-driven high-side P-channel switching without bootstrap capacitors, simplifying the gate drive. With a 12V supply and 3A motor current per leg, total package dissipation stays around 1W per device, well below the 2W thermal envelope. The SO-8 footprint keeps the H-bridge under 50 sq-mm of PCB area, ideal for compact robotics and consumer motor-control designs.
Recomendado
Hot-Swap and Inrush Current Limiter
The IRF7319TRPBF's complementary pair enables a hot-swap controller that combines a high-side P-channel load disconnect with a low-side N-channel inrush-current limiter. The 30V VDS rating suits 12V and 24V telecom/datacom backplanes, and the SO-8 footprint integrates two switches into one component. Driving the N-channel from a soft-start RC network limits inrush to a few amps while the P-channel provides fast OVP/UVP disconnect. Mounting on 1+ sq-in of copper maintains junction temperature below 100C at 3A continuous.
Recomendado
Level Shifter and Signal Switch
The IRF7319TRPBF functions as a 30V-tolerant bidirectional level shifter between 1.8V/3.3V logic and 5V/12V peripherals. The N-channel handles the low-voltage side with low gate charge, while the P-channel provides high-side pull-up to the higher rail. This topology requires only two external pull-up resistors and is far faster than I2C level-shifters based on discrete MOSFETs. The SO-8 package keeps the BOM compact, and the 6.5A/4.9A current rating supports peripheral power switching beyond pure logic translation.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IRF7319TRPBF — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IRF7319PBF | IRF7309TRPBF | FDS8958A | IRF7313TRPBF-1 | IRFR1205TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Infineon Technologies | Infineon Technologies |
| Package | SO-8 | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Configuration | N-channel + P-channel | N-channel + P-channel | N-channel + P-channel | N-channel + P-channel | N-channel + P-channel | Single P-channel |
| VDS Max | 30 V | 30 V | 30 V | 30 V | 30 V | 55 V |
| N-channel Continuous ID | 6.5 A | 6.5 A | ~4 A | ~6-7 A | ~5-6 A | N/A (single P-ch) |
| P-channel Continuous ID | 4.9 A | 4.9 A | ~3 A | ~4-5 A | ~4 A | 44 A (single P-ch) |
| N-channel RDS(on) Max | 29 mOhm | 29 mOhm | ~50 mOhm | ~25 mOhm | ~40 mOhm | N/A |
| Total Power Dissipation | 2 W | 2 W | 2 W | 2 W | 2 W | 2.5 W |
| Lead-Free / RoHS | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes | Yes (PBF) | Yes (PBF) |
Principais diferenciais
- Integrated complementary N+P pair in single SO-8 (vs Two discrete SOT-23 MOSFETs)
- Higher N-channel current capability (vs IRF7309TRPBF)
- Infineon fifth-generation HEXFET process (vs FDS8958A (onsemi))
Notas de projeto
At VIN=12V and 3A continuous load per channel, each N-channel in the IRF7319TRPBF dissipates approximately 1.1W (3A x ~35 mOhm effective RDS(on) at temperature). The 120 C/W thermal resistance to ambient on a 1 sq-in SO-8 copper pad causes a junction temperature rise of about 130C above ambient, requiring a larger copper pour (2+ sq-in) or forced-air cooling. Estimate: PD ~ I^2 x RDS(on), Theta_JA = 120 C/W N-ch. Source: SO-8 dual MOSFET datasheet thermal table.
Route the high-current switching loop (input cap -> N-channel drain -> N-channel source -> ground -> input cap) over a continuous ground plane to minimize parasitic inductance. Use wide copper pours on pins 4 (N-drain tab) and 5 (P-drain tab) as primary heat-spreading paths; both pins 4 and 5 also serve as the drain of their respective channels. Place gate-drive resistors (10-100 ohm) within 5 mm of the gate pins to dampen ringing. Source: IRF7319 PCB layout application note.
Do not exceed VGS of +/-20V on either MOSFET channel; the IRF7319TRPBF does not include gate-protection Zener diodes. Use a gate-source pull-down resistor (10-100 kOhm) on the N-channel gate to ensure it stays off during MCU reset. The P-channel needs its gate driven negative relative to its source (typical VGS(th) ~-2V), so a 0V gate-to-source voltage is required to fully enhance it. Source: IRF7319 absolute maximum ratings.
Keep the gate-drive traces away from the switching node (N-channel drain) to avoid capacitive coupling that can cause false triggering. The exposed lead frame of the SO-8 package should be soldered to a copper pad that extends at least 2 mm beyond the package outline on all sides, with thermal vias (0.3 mm drill, 1 mm pitch) connecting to an inner ground plane for additional heat spreading. Estimated: 2+ sq-in SO-8 pad yields ~80 C/W Theta_JA vs 120 C/W on minimum pad. Source: JEDEC JESD51 SO-8 thermal board standard.
Informações de conformidade
RoHS compliant per PBF suffix in MPN. Lead-free (Pb-free) matte-tin plating. Halogen-free per Infineon product family datasheet. Not AEC-Q100 qualified - consult Infineon automotive-grade parts for that requirement.
