IRLR8726TRPBF vs IRLR8726TRLPBF 비교

다음의 상세 나란히 비교: IRLR8726TRPBF 제조: Infineon 및 IRLR8726TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRLR8726TRPBF IRLR8726TRLPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.32 $0.36
Manufacturer Infineon Technologies —
Part Number IRLR8726TRPBF —
Technology StrongIRFET™ (HEXFET) —
Channel Type N-Channel —
Drain-Source Voltage (V_DS) 30 V —
Continuous Drain Current (I_D) at T_C 86 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R_DS(on) max 5.8 mΩ at V_GS = 10 V —
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) min/max] —
Gate Charge Q_g (typ.) 15 nC —
Power Dissipation P_D 75 W at T_C —
동작 접합 온도 -55C to +175C -55C to +175C
패키지 TO-252AA (DPAK) TO-252AA (DPAK)
실장 유형 Surface Mount Surface Mount
핀 수 3 (Gate, Drain, Source) —
RoHS 상태 Compliant —
할로겐 프리 Yes —
MSL 레벨 1 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging)
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TC=25C — 86 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) Max at VGS=10V — 5.8 mOhm
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate-Source Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — 15 nC
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Maximum Power Dissipation (PD) at TC=25C — 75 W
Technology Family — StrongIRFET
RoHS Compliance — ROHS3 Compliant
Lead-Free — Yes (PBF suffix)

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