K4S561633F-ZL75 vs K4S561633FZN75 Comparação
Comparação detalhada lado a lado de K4S561633F-ZL75 por Samsung Electronics e K4S561633FZN75 por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Samsung Electronics
K4S561633F-ZL75 - 256Mb Mobile SDRAM, 4x16Mx16, 133MHz, 54-BGA
K4S561633F-ZL75 NrndSamsung Electronics
K4S561633FZN75 - 256Mb Mobile SDRAM 4x16Mx16 133MHz FBGA | Samsung
K4S561633FZN75 NrndComparação de especificações
| Parâmetro | K4S561633F-ZL75 | K4S561633FZN75 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoria | Memory ICs | Memory ICs |
| Status do ciclo de vida | NRND | NRND |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $2,50 | $2,52 |
| Tipo de memória | Synchronous DRAM (Mobile SDRAM) | Mobile SDRAM (Synchronous DRAM) |
| Density | 256 Mbit (268,435,456 bits) | 256 Mbit (268,435,456 bits) |
| Organização da memória | 4 banks x 4,196,304 words x 16 bits (4M x 16 x 4 banks) | 4 banks x 4,196,304 words x 16 bits |
| Operating Frequency (max) | 133 MHz | — |
| Clock Access Time | 5.4 ns | — |
| Speed Grade | ZL75 (7.5 ns / CAS Latency 3, 133 MHz) | — |
| Supply Voltage (VDD) | 3.3 V | — |
| I/O Standard | LVCMOS-compatible | — |
| Number of Banks | 4 | — |
| Burst Length | 1, 2, 4, 8, Full Page | 1, 2, 4, 8, full page (programmable) |
| Burst Type | Sequential or Interleave | — |
| Latência CAS | Programmable, 2 or 3 | Programmable, 2 or 3 |
| Encapsulamento | 54-ball FBGA (54-BOC) / TFBGA | 54-ball FBGA (54BOC) |
| Tipo de montagem | Surface Mount | — |
| RoHS / Lead-Free | Pb-Free (per -L75 suffix) | — |
| Temperatura de operação | [DATA_NEEDED: operating temperature grade] | Commercial grade (per -ZN75 suffix) |
| Clock Frequency | — | 133 MHz |
| Taxa de dados | — | PC133 (SDRAM) |
| Supply Voltage (VDD/VDDQ) | — | 3.0 V (typ); 2.7 V-3.3 V range |
| Interface | — | LVCMOS |
| Process Technology | — | Samsung high-performance CMOS |
| Refresh | — | Auto-Refresh and Self-Refresh |
| Power Modes | — | Power-Down mode, Partial Array Self-Refresh (PASR) |
| Lead-Free / RoHS | — | Pb-free (lead-free) - per '-ZN' suffix |
| Bank Architecture | — | 4 internal banks |
| Row Address | — | A0-A12 (13-bit) |
| Data Width | — | x16 (DQ0-DQ15) |