K4S561633F-ZL75 vs K4S561633FZN75 Comparaison
Comparaison détaillée côte à côte de K4S561633F-ZL75 par Samsung Electronics et K4S561633FZN75 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K4S561633F-ZL75 - 256Mb Mobile SDRAM, 4x16Mx16, 133MHz, 54-BGA
K4S561633F-ZL75 NrndSamsung Electronics
K4S561633FZN75 - 256Mb Mobile SDRAM 4x16Mx16 133MHz FBGA | Samsung
K4S561633FZN75 NrndComparaison des spécifications
| Paramètre | K4S561633F-ZL75 | K4S561633FZN75 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | NRND | NRND |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,50 | $2,52 |
| Type de mémoire | Synchronous DRAM (Mobile SDRAM) | Mobile SDRAM (Synchronous DRAM) |
| Density | 256 Mbit (268,435,456 bits) | 256 Mbit (268,435,456 bits) |
| Organisation de la mémoire | 4 banks x 4,196,304 words x 16 bits (4M x 16 x 4 banks) | 4 banks x 4,196,304 words x 16 bits |
| Operating Frequency (max) | 133 MHz | — |
| Clock Access Time | 5.4 ns | — |
| Speed Grade | ZL75 (7.5 ns / CAS Latency 3, 133 MHz) | — |
| Supply Voltage (VDD) | 3.3 V | — |
| I/O Standard | LVCMOS-compatible | — |
| Number of Banks | 4 | — |
| Burst Length | 1, 2, 4, 8, Full Page | 1, 2, 4, 8, full page (programmable) |
| Burst Type | Sequential or Interleave | — |
| Latence CAS | Programmable, 2 or 3 | Programmable, 2 or 3 |
| Boîtier | 54-ball FBGA (54-BOC) / TFBGA | 54-ball FBGA (54BOC) |
| Type de montage | Surface Mount | — |
| RoHS / Lead-Free | Pb-Free (per -L75 suffix) | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature grade] | Commercial grade (per -ZN75 suffix) |
| Clock Frequency | — | 133 MHz |
| Débit de données | — | PC133 (SDRAM) |
| Supply Voltage (VDD/VDDQ) | — | 3.0 V (typ); 2.7 V-3.3 V range |
| Interface | — | LVCMOS |
| Process Technology | — | Samsung high-performance CMOS |
| Refresh | — | Auto-Refresh and Self-Refresh |
| Power Modes | — | Power-Down mode, Partial Array Self-Refresh (PASR) |
| Lead-Free / RoHS | — | Pb-free (lead-free) - per '-ZN' suffix |
| Bank Architecture | — | 4 internal banks |
| Row Address | — | A0-A12 (13-bit) |
| Data Width | — | x16 (DQ0-DQ15) |