K9LUGY8J7D-CCK0 vs K9NUGY8R6B-CCQ0 Comparação
Comparação detalhada lado a lado de K9LUGY8J7D-CCK0 por Samsung Electronics e K9NUGY8R6B-CCQ0 por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Samsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ AtivoSamsung Electronics
K9NUGY8R6B-CCQ0 - 1Tb TLC V-NAND Flash | Samsung | SSD Storage
K9NUGY8R6B-CCQ0 ✓ AtivoComparação de especificações
| Parâmetro | K9LUGY8J7D-CCK0 | K9NUGY8R6B-CCQ0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoria | Memory ICs | Memory ICs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | — |
| Tipo de memória | NAND Flash (V-NAND) | NAND Flash (V-NAND, 3D TLC) |
| Memory Cell Type | TLC (Triple-Level Cell) | — |
| Technology | V-NAND (vertical NAND) | — |
| Encapsulamento | BGA (surface mount) | 176-ball FBGA (176L) |
| Tipo de montagem | Surface Mount | Surface Mount (BGA) |
| Interface | [DATA_NEEDED: interface type / toggle DDR mode] | Asynchronous / Toggle-mode NAND (per Samsung V-NAND protocol) |
| Density | [DATA_NEEDED: total density (bits)] | 1 Tb |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Tensão de alimentação | [DATA_NEEDED: supply voltage (V)] | [DATA_NEEDED: VCC range] |
| Temperatura de operação | [DATA_NEEDED: temperature range (C)] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycles] | — |
| Data Retention | [DATA_NEEDED: retention] | [DATA_NEEDED: retention] |
| Speed Grade Code | CCK0 (per Samsung part-number convention) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance] |
| Cell Type | — | Triple-Level Cell (TLC) |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance] |
| Read Latency | — | [DATA_NEEDED: tR] |
| ECC Requirement | — | External controller LDPC ECC required |
| Application Class | — | Consumer / Client / Enterprise SSD raw NAND |