K9LUGY8J7D-CCK0 vs K9NUGY8R6B-CCQ0 对比
详细并排对比 K9LUGY8J7D-CCK0 出自 Samsung Electronics 和 K9NUGY8R6B-CCQ0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ 量产中Samsung Electronics
K9NUGY8R6B-CCQ0 - 1Tb TLC V-NAND Flash | Samsung | SSD Storage
K9NUGY8R6B-CCQ0 ✓ 量产中规格对比
| 参数 | K9LUGY8J7D-CCK0 | K9NUGY8R6B-CCQ0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.00 |
| Manufacturer | Samsung Electronics | — |
| 存储器类型 | NAND Flash (V-NAND) | NAND Flash (V-NAND, 3D TLC) |
| Memory Cell Type | TLC (Triple-Level Cell) | — |
| Technology | V-NAND (vertical NAND) | — |
| 封装 | BGA (surface mount) | 176-ball FBGA (176L) |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| 接口 | [DATA_NEEDED: interface type / toggle DDR mode] | Asynchronous / Toggle-mode NAND (per Samsung V-NAND protocol) |
| Density | [DATA_NEEDED: total density (bits)] | 1 Tb |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| 电源电压 | [DATA_NEEDED: supply voltage (V)] | [DATA_NEEDED: VCC range] |
| 工作温度 | [DATA_NEEDED: temperature range (C)] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycles] | — |
| Data Retention | [DATA_NEEDED: retention] | [DATA_NEEDED: retention] |
| Speed Grade Code | CCK0 (per Samsung part-number convention) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance] |
| Cell Type | — | Triple-Level Cell (TLC) |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance] |
| Read Latency | — | [DATA_NEEDED: tR] |
| ECC Requirement | — | External controller LDPC ECC required |
| Application Class | — | Consumer / Client / Enterprise SSD raw NAND |