K9LUGY8J7D-CCK0 vs K9NUGY8R6B-CCQ0 Comparaison
Comparaison détaillée côte à côte de K9LUGY8J7D-CCK0 par Samsung Electronics et K9NUGY8R6B-CCQ0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ ActifSamsung Electronics
K9NUGY8R6B-CCQ0 - 1Tb TLC V-NAND Flash | Samsung | SSD Storage
K9NUGY8R6B-CCQ0 ✓ ActifComparaison des spécifications
| Paramètre | K9LUGY8J7D-CCK0 | K9NUGY8R6B-CCQ0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | — |
| Type de mémoire | NAND Flash (V-NAND) | NAND Flash (V-NAND, 3D TLC) |
| Memory Cell Type | TLC (Triple-Level Cell) | — |
| Technology | V-NAND (vertical NAND) | — |
| Boîtier | BGA (surface mount) | 176-ball FBGA (176L) |
| Type de montage | Surface Mount | Surface Mount (BGA) |
| Interface | [DATA_NEEDED: interface type / toggle DDR mode] | Asynchronous / Toggle-mode NAND (per Samsung V-NAND protocol) |
| Density | [DATA_NEEDED: total density (bits)] | 1 Tb |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Tension d'alimentation | [DATA_NEEDED: supply voltage (V)] | [DATA_NEEDED: VCC range] |
| Température de fonctionnement | [DATA_NEEDED: temperature range (C)] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycles] | — |
| Data Retention | [DATA_NEEDED: retention] | [DATA_NEEDED: retention] |
| Speed Grade Code | CCK0 (per Samsung part-number convention) | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance] |
| Cell Type | — | Triple-Level Cell (TLC) |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance] |
| Read Latency | — | [DATA_NEEDED: tR] |
| ECC Requirement | — | External controller LDPC ECC required |
| Application Class | — | Consumer / Client / Enterprise SSD raw NAND |