K9LUGY8J7D-CCK0 vs K9NUGY8R6B-CCQ0 비교
다음의 상세 나란히 비교: K9LUGY8J7D-CCK0 제조: Samsung Electronics 및 K9NUGY8R6B-CCQ0 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Samsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ 활성Samsung Electronics
K9NUGY8R6B-CCQ0 - 1Tb TLC V-NAND Flash | Samsung | SSD Storage
K9NUGY8R6B-CCQ0 ✓ 활성사양 비교
| 파라미터 | K9LUGY8J7D-CCK0 | K9NUGY8R6B-CCQ0 |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $0.00 |
| Manufacturer | Samsung Electronics | — |
| 메모리 유형 | NAND Flash (V-NAND) | NAND Flash (V-NAND, 3D TLC) |
| Memory Cell Type | TLC (Triple-Level Cell) | — |
| Technology | V-NAND (vertical NAND) | — |
| 패키지 | BGA (surface mount) | 176-ball FBGA (176L) |
| 실장 유형 | Surface Mount | Surface Mount (BGA) |
| 인터페이스 | [DATA_NEEDED: interface type / toggle DDR mode] | Asynchronous / Toggle-mode NAND (per Samsung V-NAND protocol) |
| Density | [DATA_NEEDED: total density (bits)] | 1 Tb |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| 공급 전압 | [DATA_NEEDED: supply voltage (V)] | [DATA_NEEDED: VCC range] |
| 동작 온도 | [DATA_NEEDED: temperature range (C)] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycles] | — |
| Data Retention | [DATA_NEEDED: retention] | [DATA_NEEDED: retention] |
| Speed Grade Code | CCK0 (per Samsung part-number convention) | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance] |
| Cell Type | — | Triple-Level Cell (TLC) |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance] |
| Read Latency | — | [DATA_NEEDED: tR] |
| ECC Requirement | — | External controller LDPC ECC required |
| Application Class | — | Consumer / Client / Enterprise SSD raw NAND |